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1. 发明授权

US09394178B2 Wafer scale epitaxial graphene transfer 有权
公开(公告)号：US09394178B2
公开(公告)日：2016-07-19
申请号：US14816887
申请日：2015-08-03
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Stephen W. Bedell , Christos D. Dimitrakopoulos , Keith E. Fogel , James B. Hannon , Jeehwan Kim , Hongsik Park , Dirk Pfeiffer , Devendra K. Sadana
IPC分类号： H01L21/027 , H05K3/04 , C01B31/04 , B32B43/00 , H01L21/02 , H01L21/683 , H01L21/20 , H01L29/16
CPC分类号： C01B31/0446 , C01B32/184 , H01L21/02378 , H01L21/02527 , H01L21/0272 , H01L21/2007 , H01L21/6835 , H01L29/1606 , H01L2221/68345 , H01L2221/68368 , H01L2221/68381 , Y10T156/11 , Y10T156/1153
摘要： A method for transfer of a two-dimensional material includes forming a spreading layer of a two-dimensional material on a substrate, the spreading layer having a monolayer. A stressor layer is formed on the spreading layer, and the stressor layer is configured to apply stress to a closest monolayer of the spreading layer. The closest monolayer is exfoliated by mechanically splitting the spreading layer wherein the closest monolayer remains on the stressor layer.

2. 发明授权

US09093290B2 Self-formation of high-density arrays of nanostructures 有权
公开(公告)号：US09093290B2
公开(公告)日：2015-07-28
申请号：US13967174
申请日：2013-08-14
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Christos D. Dimitrakopoulos , Jeehwan Kim , Hongsik Park , Byungha Shin
IPC分类号： H01L29/06 , H01L29/16 , H01L29/32 , C30B29/36 , C30B33/06 , C30B25/18
CPC分类号： H01L29/0669 , B82Y10/00 , B82Y40/00 , C30B25/18 , C30B29/36 , C30B33/06 , H01L21/02527 , H01L21/02529 , H01L21/02664 , H01L21/304 , H01L29/0665 , H01L29/0673 , H01L29/127 , H01L29/1606 , H01L29/1608 , H01L29/32 , Y10T156/1082
摘要： A method for forming nanostructures includes bonding a flexible substrate to a crystalline semiconductor layer having a two-dimensional material formed on a side opposite the flexible substrate. The crystalline semiconductor layer is stressed in a first direction to initiate first cracks in the crystalline semiconductor layer. The first cracks are propagated through the crystalline semiconductor layer and through the two-dimensional material. The stress of the crystalline semiconductor layer is released to provide parallel structures including the two-dimensional material on the crystalline semiconductor layer.

3. 发明申请

US20140339506A1 FORMATION OF LARGE SCALE SINGLE CRYSTALLINE GRAPHENE 有权
标题翻译：形成大规模单晶石墨
公开(公告)号：US20140339506A1
公开(公告)日：2014-11-20
申请号：US13966690
申请日：2013-08-14
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Christos D. Dimitrakopoulos , Keith E. Fogel , Jeehwan Kim , Hongsik Park
IPC分类号： H01L29/16
CPC分类号： H01L29/1606 , B32B9/007 , B32B9/041 , B32B38/10 , B32B2307/202 , B32B2307/704 , C01B32/188 , H01L21/0272 , H01L21/2007 , H01L23/53276 , H01L2924/0002 , Y10T156/11 , Y10T156/1153 , Y10T428/24612 , Y10T428/26 , H01L2924/00
摘要： A method for transfer of a two-dimensional material includes forming a spreading layer of a two-dimensional material on a first substrate. The spreading layer has at least one monolayer. A stressor layer is formed on the spreading layer. The stressor layer is configured to apply stress to a closest monolayer of the spreading layer. The closest monolayer is exfoliated by mechanically splitting the spreading layer wherein at least the closest monolayer remains on the stressor layer. The at least one monolayer is stamped against a second substrate to adhere remnants of the two-dimensional material on the at least one monolayer to the second substrate to provide a single monolayer on the stressor layer. The single monolayer is transferred to a third substrate.
摘要翻译：二维材料的转印方法包括在第一基板上形成二维材料的扩散层。扩散层具有至少一个单层。在扩散层上形成应力层。应力层被配置为将应力施加到扩散层的最接近的单层。最接近的单层通过机械分裂扩散层而被剥离，其中至少最接近的单层保留在应力层上。将至少一个单层冲压到第二基底上以将至少一个单层上的二维材料的残余物粘附到第二基底上，以在应力层上提供单个单层。将单个单层转移到第三底物。

4. 发明申请

US20140167109A1 CONTINUOUS METAL SEMICONDUCTOR ALLOY VIA FOR INTERCONNECTS 审中-公开
标题翻译：连续金属半导体合金通过互连
公开(公告)号：US20140167109A1
公开(公告)日：2014-06-19
申请号：US14188028
申请日：2014-02-24
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Guy Cohen , Christos D. Dimitrakopoulos , Alfred Grill
IPC分类号： H01L29/78 , H01L23/48
CPC分类号： H01L29/7848 , B82Y10/00 , H01L21/28518 , H01L21/76885 , H01L23/481 , H01L29/665 , H01L29/78 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： A contact structure is disclosed in which a continuous metal semiconductor alloy is located within a via contained within a dielectric material. The continuous semiconductor metal alloy is in direct contact with an upper metal line of a first metal level located atop the continuous semiconductor metal alloy and at least a surface of each source and drain diffusion region located beneath the continuous metal semiconductor alloy. The continuous metal semiconductor alloy includes a lower portion that is contained within an upper surface of each source and drain region, and a vertical pillar portion extending upward from the lower portion.
摘要翻译：公开了一种接触结构，其中连续的金属半导体合金位于包含在电介质材料内的通孔内。连续半导体金属合金与位于连续半导体金属合金顶部的第一金属水平的上金属线和至少位于连续金属半导体合金下方的源极和漏极扩散区的表面直接接触。连续金属半导体合金包括包含在每个源极和漏极区域的上表面内的下部以及从下部向上延伸的垂直柱部分。

5. 发明申请

US20160264421A1 MULTILAYER GRAPHENE STRUCTURE REINFORCED WITH POLYAROMATIC INTERSTITIAL LAYERS 审中-公开
公开(公告)号：US20160264421A1
公开(公告)日：2016-09-15
申请号：US14642249
申请日：2015-03-09
申请人： International Business Machines Corporation
发明人： Jose Miguel Lobez Comeras , Christos D. Dimitrakopoulos , Aaron D. Franklin , Joshua T. Smith
IPC分类号： C01B31/04
CPC分类号： C09D165/00 , C01B32/194 , C01B2204/04 , C08G2261/143 , C08G2261/3223 , C08J7/045 , C08J2365/00 , C08J2465/00 , C23C16/0272 , C23C16/26
摘要： In one embodiment, a multilayer graphene structure includes a first layer of graphene, a second layer of graphene; and an interstitial layer bonding the first layer of graphene to the second layer of graphene, wherein the interstitial layer comprises a polyaromatic compound. In another embodiment, a multilayer graphene structure is fabricated by providing a first layer of graphene, providing a second layer of graphene, and providing a first interstitial layer between the first layer of graphene and the second layer of graphene, wherein the first interstitial layer comprises a polyaromatic compound. In another embodiment, a multilayer graphene structure includes a plurality of layers of graphene and a plurality of interstitial layers formed of at least one polyaromatic compound, where each pair of the layers of graphene is bonded by one of the interstitial layers, such that a structure comprising alternating layers of graphene and interstitial layers is formed.

6. 发明授权

US09059013B2 Self-formation of high-density arrays of nanostructures 有权
标题翻译：纳米结构高密度阵列的自形成
公开(公告)号：US09059013B2
公开(公告)日：2015-06-16
申请号：US13848396
申请日：2013-03-21
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Christos D. Dimitrakopoulos , Jeehwan Kim , Hongsik Park , Byungha Shin
IPC分类号： H01L29/06 , H01L29/16 , H01L29/32 , C30B29/36 , C30B33/06 , C30B25/18
CPC分类号： H01L29/0669 , B82Y10/00 , B82Y40/00 , C30B25/18 , C30B29/36 , C30B33/06 , H01L21/02527 , H01L21/02529 , H01L21/02664 , H01L21/304 , H01L29/0665 , H01L29/0673 , H01L29/127 , H01L29/1606 , H01L29/1608 , H01L29/32 , Y10T156/1082
摘要： A method for forming nanostructures includes bonding a flexible substrate to a crystalline semiconductor layer having a two-dimensional material formed on a side opposite the flexible substrate. The crystalline semiconductor layer is stressed in a first direction to initiate first cracks in the crystalline semiconductor layer. The first cracks are propagated through the crystalline semiconductor layer and through the two-dimensional material. The stress of the crystalline semiconductor layer is released to provide parallel structures including the two-dimensional material on the crystalline semiconductor layer.
摘要翻译：一种用于形成纳米结构的方法包括将柔性基板结合到具有形成在与柔性基板相对的一侧上的二维材料的晶体半导体层。晶体半导体层在第一方向上受到应力以引发晶体半导体层中的第一裂纹。第一裂纹通过晶体半导体层和二维材料传播。释放晶体半导体层的应力以提供包括结晶半导体层上的二维材料的平行结构。

7. 发明申请

US20140342127A1 FORMATION OF LARGE SCALE SINGLE CRYSTALLINE GRAPHENE 有权
公开(公告)号：US20140342127A1
公开(公告)日：2014-11-20
申请号：US13894954
申请日：2013-05-15
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Christos D. Dimitrakopoulos , Keith E. Fogel , Jeehwan Kim , Hongsik Park
IPC分类号： B32B37/26 , B32B9/04
CPC分类号： H01L29/1606 , B32B9/007 , B32B9/041 , B32B38/10 , B32B2307/202 , B32B2307/704 , C01B32/188 , H01L21/0272 , H01L21/2007 , H01L23/53276 , H01L2924/0002 , Y10T156/11 , Y10T156/1153 , Y10T428/24612 , Y10T428/26 , H01L2924/00
摘要： A method for transfer of a two-dimensional material includes forming a spreading layer of a two-dimensional material on a first substrate. The spreading layer has at least one monolayer. A stressor layer is formed on the spreading layer. The stressor layer is configured to apply stress to a closest monolayer of the spreading layer. The closest monolayer is exfoliated by mechanically splitting the spreading layer wherein at least the closest monolayer remains on the stressor layer. The at least one monolayer is stamped against a second substrate to adhere remnants of the two-dimensional material on the at least one monolayer to the second substrate to provide a single monolayer on the stressor layer. The single monolayer is transferred to a third substrate.

8. 发明申请

US20140284547A1 SELF-FORMATION OF HIGH-DENSITY ARRAYS OF NANOSTRUCTURES 有权
公开(公告)号：US20140284547A1
公开(公告)日：2014-09-25
申请号：US13848396
申请日：2013-03-21
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Christos D. Dimitrakopoulos , Jeehwan Kim , Hongsik Park , Byungha Shin
IPC分类号： H01L29/06 , C30B25/18 , C30B1/10
CPC分类号： H01L29/0669 , B82Y10/00 , B82Y40/00 , C30B25/18 , C30B29/36 , C30B33/06 , H01L21/02527 , H01L21/02529 , H01L21/02664 , H01L21/304 , H01L29/0665 , H01L29/0673 , H01L29/127 , H01L29/1606 , H01L29/1608 , H01L29/32 , Y10T156/1082
摘要： A method for forming nanostructures includes bonding a flexible substrate to a crystalline semiconductor layer having a two-dimensional material formed on a side opposite the flexible substrate. The crystalline semiconductor layer is stressed in a first direction to initiate first cracks in the crystalline semiconductor layer. The first cracks are propagated through the crystalline semiconductor layer and through the two-dimensional material. The stress of the crystalline semiconductor layer is released to provide parallel structures including the two-dimensional material on the crystalline semiconductor layer.

9. 发明授权

US08766258B1 Authentication using graphene based devices as physical unclonable functions 有权
标题翻译：使用基于石墨烯的设备作为物理不可克隆功能的认证
公开(公告)号：US08766258B1
公开(公告)日：2014-07-01
申请号：US13712455
申请日：2012-12-12
申请人： International Business Machines Corporation
发明人： Christos D. Dimitrakopoulos , Dirk Pfeiffer , Joshua T. Smith
IPC分类号： H01L23/58 , H01L21/66
CPC分类号： H01L23/573 , H01L21/02 , H01L21/02225 , H01L23/53276 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure relates to secure devices having a physical unclonable function and methods of manufacturing such secure devices. One device includes at least one graphene layer representing a physical unclonable function and a measurement circuit for measuring at least one property of the at least one graphene layer. Another device includes at least a first graphene layer and a second graphene layer representing a physical unclonable function, where one of the graphene layers has been subjected to a variability enhancement such that a measurable property is different for each of the layers. A method includes providing a substrate for a secure device and providing at least one graphene layer on the substrate, the at least one graphene layer representing a physical unclonable function. The providing of the at least one graphene layer includes applying at least one variability enhancement to the at least one graphene layer.
摘要翻译：本公开涉及具有物理不可克隆功能的安全设备和制造这种安全设备的方法。一个装置包括表示物理不可克隆功能的至少一个石墨烯层和用于测量至少一个石墨烯层的至少一个性质的测量电路。另一装置包括至少第一石墨烯层和表示物理不可克隆功能的第二石墨烯层，其中石墨烯层中的一个已经经受可变性增强，使得每个层的可测量性质不同。一种方法包括提供用于安全装置的衬底并且在衬底上提供至少一个石墨烯层，所述至少一个石墨烯层表示物理不可克隆功能。提供至少一个石墨烯层包括对至少一个石墨烯层施加至少一个可变性增强。

10. 发明授权

US08658488B2 Method for forming semiconductor chip with graphene based devices in an interconnect structure of the chip 有权
标题翻译：用于在芯片的互连结构中形成具有石墨烯的器件的半导体芯片的方法
公开(公告)号：US08658488B2
公开(公告)日：2014-02-25
申请号：US13826874
申请日：2013-03-14
申请人： International Business Machines Corporation
发明人： Christos D. Dimitrakopoulos , Guy Cohen , Stephen M. Gates , Alfred Grill , Timothy J. McArdle , Chun-yung Sung
IPC分类号： H01L21/8238
CPC分类号： H01L21/02527 , H01L29/1606 , H01L29/41766 , H01L29/42356 , H01L29/66431 , H01L29/778 , H01L2924/00013 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599
摘要： A graphene layer is provided onto at least an upper surface of a first dielectric material which includes at least one first conductive region contained therein. At least one semiconductor device is formed using the graphene layer as an element of the at least one semiconductor device. After forming the at least one semiconductor device, a second dielectric material is formed covering the graphene layer, the at least one semiconductor device, and portions of the first dielectric material. The second dielectric that is formed includes at least one second conductive region contained therein, and the at least one second conductive region is in contact with a conductive element of the at least one semiconductor device.
摘要翻译：至少在第一介电材料的上表面上提供石墨烯层，该第一电介质材料包括其中包含的至少一个第一导电区域。使用石墨烯层作为至少一个半导体器件的元件形成至少一个半导体器件。在形成至少一个半导体器件之后，形成覆盖石墨烯层，至少一个半导体器件和第一电介质材料的部分的第二电介质材料。所形成的第二电介质包括其中包含的至少一个第二导电区域，并且所述至少一个第二导电区域与所述至少一个半导体器件的导电元件接触。

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