专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09059180B2 Thick bond pad for chip with cavity package 有权
标题翻译：用于芯片的厚焊盘，带腔封装
公开(公告)号：US09059180B2
公开(公告)日：2015-06-16
申请号：US13737611
申请日：2013-01-09
申请人： International Business Machines Corporation
发明人： Jeffrey P. Gambino , Robert K. Leidy , Richard J. Rassel
IPC分类号： H01L31/0232 , H01L23/538 , H01L31/0203 , H01L21/768
CPC分类号： H01L27/14687 , H01L21/76802 , H01L21/76877 , H01L23/5384 , H01L31/0203 , H01L2924/0002 , H01L2924/00
摘要： Disclosed herein an image sensor chip, including a substrate having at least one via extending through at least one inter layer dielectric (ILD); a first conductive layer over the ILD, wherein the first conductive layer has a first thickness; a second conductive layer over the first conductive layer, wherein the second conductive layer has a second thickness of less than the first thickness; a polymer layer over the second conductive layer, the polymer layer including a cavity; a plurality of cavity components in the cavity; and protective layer contacting the polymer layer and covering the cavity.
摘要翻译：本文公开了一种图像传感器芯片，包括具有延伸穿过至少一个层间电介质（ILD）的至少一个通孔的衬底; ILD上的第一导电层，其中所述第一导电层具有第一厚度; 在所述第一导电层上的第二导电层，其中所述第二导电层具有小于所述第一厚度的第二厚度; 在所述第二导电层上的聚合物层，所述聚合物层包括空腔; 空腔中的多个空腔部件; 并且保护层与聚合物层接触并覆盖空腔。

2. 发明授权

US09759868B2 Structures for preventing dicing damage 有权
公开(公告)号：US09759868B2
公开(公告)日：2017-09-12
申请号：US14933705
申请日：2015-11-05
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Brett Cucci , Paul F. Fortier , Jeffrey P. Gambino , Robert K. Leidy , Qizhi Liu , Richard J. Rassel
IPC分类号： G02B6/30 , G02B6/13
CPC分类号： G02B6/30 , G02B6/4243 , G02B6/428
摘要： The disclosure relates to semiconductor structures and, more particularly, to structures for preventing dicing damage on photonics wafers. The structure includes: an optical waveguide structure to optical fiber interface formed on an integrated circuit; and a groove formed in a substrate and which includes a structure preventing a fluid pressure of a dicing operation from damaging the substrate along the groove.

3. 发明授权

US09059360B2 Photoconductor-on-active pixel device 有权
标题翻译：光电导体有源像素装置
公开(公告)号：US09059360B2
公开(公告)日：2015-06-16
申请号：US14230146
申请日：2014-03-31
申请人： International Business Machines Corporation
发明人： Jeffrey P. Gambino , Robert K. Leidy , Richard J. Rassel
IPC分类号： H01L31/105 , H01L27/146
CPC分类号： H01L31/105 , H01L27/14632 , H01L27/14636 , H01L27/14665 , H01L27/14687
摘要： A design structure embodied in a machine readable medium used in a design process includes a first dielectric layer disposed on an intermediary layer, a first conductive pad portion and a first interconnect portion disposed on the first dielectric layer, a second dielectric layer disposed on the first dielectric layer, a first capping layer disposed on the first interconnect portion and a portion of the first conductive pad portion, a second capping layer disposed on the first capping layer and a portion of the second dielectric layer, an n-type doped silicon layer disposed on the second capping layer and the first conductive pad portion, an intrinsic silicon layer disposed on the n-type doped silicon layer, and a p-type doped silicon layer disposed on the intrinsic silicon layer.
摘要翻译：体现在设计过程中使用的机器可读介质中的设计结构包括设置在中间层上的第一介电层，设置在第一介电层上的第一导电焊盘部分和第一互连部分，设置在第一介电层上的第二介电层电介质层，设置在第一互连部分上的第一覆盖层和第一导电焊盘部分的一部分，设置在第一覆盖层上的第二封盖层和第二介电层的一部分，设置n型掺杂硅层在第二覆盖层和第一导电焊盘部分上，设置在n型掺杂硅层上的本征硅层和设置在本征硅层上的p型掺杂硅层。

4. 发明授权

US09106854B2 Pixel sensor cell with hold node for leakage cancellation and methods of manufacture and design structure 有权
标题翻译：具有保护节点的像素传感器单元用于泄漏消除，以及制造和设计结构的方法
公开(公告)号：US09106854B2
公开(公告)日：2015-08-11
申请号：US14449557
申请日：2014-08-01
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： James W. Adkisson , John J. Ellis-Monaghan , Richard J. Rassel
IPC分类号： H04N5/359 , H01L27/146 , H04N5/3745 , H04N5/353 , H04N5/378
CPC分类号： H04N5/3595 , H01L27/14603 , H01L27/14609 , H04N5/3532 , H04N5/359 , H04N5/3745 , H04N5/378
摘要： A reference pixel sensor cell (e.g., global shutter) with hold node for leakage cancellation, methods of manufacture and design structure is provided. A pixel array includes one or more reference pixel sensor cells dispersed locally throughout active light sensing regions. The one or more reference pixel sensor cells provides a reference signal used to correct for photon generated leakage signals which vary by locality within the active light sensing regions.
摘要翻译：提供了具有用于泄漏消除的保持节点的参考像素传感器单元（例如，全局快门），制造方法和设计结构。像素阵列包括在有源光感测区域局部分散的一个或多个参考像素传感器单元。一个或多个参考像素传感器单元提供用于校正由于有源光感测区域内的局部性而变化的光子产生的泄漏信号的参考信号。

5. 发明申请

US20150221698A1 THICK BOND PAD FOR CHIP WITH CAVITY PACKAGE 审中-公开
标题翻译：厚重的包装用于芯片
公开(公告)号：US20150221698A1
公开(公告)日：2015-08-06
申请号：US14688215
申请日：2015-04-16
申请人： International Business Machines Corporation
发明人： Jeffrey P. Gambino , Robert K. Leidy , Richard J. Rassel
IPC分类号： H01L27/146 , H01L21/768
CPC分类号： H01L27/14687 , H01L21/76802 , H01L21/76877 , H01L23/5384 , H01L31/0203 , H01L2924/0002 , H01L2924/00
摘要： Disclosed herein a method, including depositing a silicon nitride layer over an inter layer dielectric (ILD); depositing a first conductive layer having a first thickness; forming a mask over a first portion of the first conductive layer to expose a second portion of the first conductive layer; etching the first conductive layer; etching the silicon nitride layer with a fluorine-based etch; and depositing a second conductive layer having a second thickness.
摘要翻译：本文公开了一种方法，包括在层间电介质（ILD）上沉积氮化硅层; 沉积具有第一厚度的第一导电层; 在所述第一导电层的第一部分上形成掩模以暴露所述第一导电层的第二部分; 蚀刻第一导电层; 用氟基蚀刻蚀刻氮化硅层; 以及沉积具有第二厚度的第二导电层。

6. 发明申请

US20140209986A1 PHOTOCONDUCTOR-ON-ACTIVE PIXEL DEVICE 有权
标题翻译：光电子激活像素设备
公开(公告)号：US20140209986A1
公开(公告)日：2014-07-31
申请号：US14230146
申请日：2014-03-31
申请人： International Business Machines Corporation
发明人： Jeffrey P. Gambino , Robert K. Leidy , Richard J. Rassel
IPC分类号： H01L31/105 , H01L27/146
CPC分类号： H01L31/105 , H01L27/14632 , H01L27/14636 , H01L27/14665 , H01L27/14687
摘要： A design structure embodied in a machine readable medium used in a design process includes a first dielectric layer disposed on an intermediary layer, a first conductive pad portion and a first interconnect portion disposed on the first dielectric layer, a second dielectric layer disposed on the first dielectric layer, a first capping layer disposed on the first interconnect portion and a portion of the first conductive pad portion, a second capping layer disposed on the first capping layer and a portion of the second dielectric layer, an n-type doped silicon layer disposed on the second capping layer and the first conductive pad portion, an intrinsic silicon layer disposed on the n-type doped silicon layer, and a p-type doped silicon layer disposed on the intrinsic silicon layer.
摘要翻译：体现在设计过程中使用的机器可读介质中的设计结构包括设置在中间层上的第一介电层，设置在第一介电层上的第一导电焊盘部分和第一互连部分，设置在第一介电层上的第二介电层电介质层，设置在第一互连部分上的第一覆盖层和第一导电焊盘部分的一部分，设置在第一覆盖层上的第二封盖层和第二介电层的一部分，设置n型掺杂硅层在第二覆盖层和第一导电焊盘部分上，设置在n型掺杂硅层上的本征硅层和设置在本征硅层上的p型掺杂硅层。

7. 发明申请

US20130127035A1 THICK BOND PAD FOR CHIP WITH CAVITY PACKAGE 有权
标题翻译：厚重的包装用于芯片
公开(公告)号：US20130127035A1
公开(公告)日：2013-05-23
申请号：US13737611
申请日：2013-01-09
申请人： International Business Machines Corporation
发明人： Jeffrey P. Gambino , Robert K. Leidy , Richard J. Rassel
IPC分类号： H01L23/538 , H01L21/768
CPC分类号： H01L27/14687 , H01L21/76802 , H01L21/76877 , H01L23/5384 , H01L31/0203 , H01L2924/0002 , H01L2924/00
摘要： Disclosed herein an image sensor chip, including a substrate having at least one via extending through at least one inter layer dielectric (ILD); a first conductive layer over the ILD, wherein the first conductive layer has a first thickness; a second conductive layer over the first conductive layer, wherein the second conductive layer has a second thickness of less than the first thickness; a polymer layer over the second conductive layer, the polymer layer including a cavity; a plurality of cavity components in the cavity; and protective layer contacting the polymer layer and covering the cavity.
摘要翻译：本文公开了一种图像传感器芯片，包括具有延伸穿过至少一个层间电介质（ILD）的至少一个通孔的衬底; ILD上的第一导电层，其中所述第一导电层具有第一厚度; 在所述第一导电层上的第二导电层，其中所述第二导电层具有小于所述第一厚度的第二厚度; 在所述第二导电层上的聚合物层，所述聚合物层包括空腔; 空腔中的多个空腔部件; 并且保护层与聚合物层接触并覆盖空腔。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式