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    • 4. 发明申请
    • LITHIUM NIOBATE OPTICAL WAVEGUIDE CHIP
    • US20220291532A1
    • 2022-09-15
    • US17632624
    • 2019-11-18
    • IRIXI PHOTONICS (SUZHOU) CO., LTD.
    • Yifan CHENMeng HUANG
    • G02F1/035
    • A lithium niobate optical waveguide chip includes a monocrystalline silicon substrate, a lithium niobate film, a negative thermo-optical coefficient material disposed on the lithium niobate film, a silicon dioxide cladding disposed on the monocrystalline silicon substrate and coating the lithium niobate film and the negative thermo-optical coefficient material, and a metal electrode disposed on the silicon dioxide cladding. The lithium niobate film includes a lithium niobate central ridge, or a proton exchange layer and lithium niobate side wings. The present invention eliminates the sensitivity of the effective refractive index of the lithium niobate optical waveguides to temperature by disposing the negative thermo-optical coefficient material layer with appropriate thickness on the lithium niobate film, realizes the design of non-thermal photoelectric devices, effectively reduces the thermo-optical coefficient of the lithium niobate optical waveguide chip, and makes the performance of the lithium niobate optical waveguide chip insensitive to temperature change.