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1. 发明申请

US20110311112A1 IDENTIFICATION DEVICE, IDENTIFICATION METHOD, AND STORAGE MEDIUM 有权
标题翻译：识别设备，识别方法和存储介质
公开(公告)号：US20110311112A1
公开(公告)日：2011-12-22
申请号：US13162250
申请日：2011-06-16
申请人： Ichiro Matsuyama , Yuki Fukui
发明人： Ichiro Matsuyama , Yuki Fukui
IPC分类号： G06K9/00
CPC分类号： G06K9/00295 , G06K9/00281
摘要： An identification device capable of improving identification accuracy. The identification device performs identification according to a face area contained in image data. Feature data is extracted from a face area in each of frames of image data. The extracted feature data is registered in a person database section. Identification is performed through comparison between the feature data registered in the person database section and the extracted feature data. A tracking section identifies an identical face area in consecutive frames. If a face area is identified in a first frame, but a face area in a second frame following the first frame, which is identified by the tracking section as identical to the identified face area in the first frame, is not identified, the extracted feature data associated with the face area in the second frame is registered as additional feature data in the person database section.
摘要翻译：能够提高识别精度的识别装置。识别装置根据图像数据中包含的面部区域进行识别。从图像数据的每帧中的面部区域提取特征数据。所提取的特征数据被登记在个人数据库部分中。通过在个人数据库部分中登记的特征数据与所提取的特征数据进行比较来进行识别。跟踪部分在连续帧中识别相同的面部区域。如果在第一帧中识别出面部区域，但是未识别由跟踪部分识别的与第一帧中的所识别的脸部区域相同的第一帧之后的第二帧中的面部区域，则提取的特征与第二帧中的面部区域相关联的数据在个人数据库部分中被注册为附加特征数据。

2. 发明授权

US08705813B2 Identification device, identification method, and storage medium 有权
标题翻译：识别装置，识别方法和存储介质
公开(公告)号：US08705813B2
公开(公告)日：2014-04-22
申请号：US13162250
申请日：2011-06-16
申请人： Ichiro Matsuyama , Yuki Fukui
发明人： Ichiro Matsuyama , Yuki Fukui
IPC分类号： G06K9/00
CPC分类号： G06K9/00295 , G06K9/00281
摘要： An identification device capable of improving identification accuracy. The identification device performs identification according to a face area contained in image data. Feature data is extracted from a face area in each of frames of image data. The extracted feature data is registered in a person database section. Identification is performed through comparison between the feature data registered in the person database section and the extracted feature data. A tracking section identifies an identical face area in consecutive frames. If a face area is identified in a first frame, but a face area in a second frame following the first frame, which is identified by the tracking section as identical to the identified face area in the first frame, is not identified, the extracted feature data associated with the face area in the second frame is registered as additional feature data in the person database section.
摘要翻译：能够提高识别精度的识别装置。识别装置根据图像数据中包含的面部区域进行识别。从图像数据的每帧中的面部区域提取特征数据。所提取的特征数据被登记在个人数据库部分中。通过在个人数据库部分中登记的特征数据与所提取的特征数据进行比较来进行识别。跟踪部分在连续帧中识别相同的面部区域。如果在第一帧中识别出面部区域，但是未识别由跟踪部分识别的与第一帧中的所识别的脸部区域相同的第一帧之后的第二帧中的面部区域，则提取的特征与第二帧中的面部区域相关联的数据在个人数据库部分中被注册为附加特征数据。

3. 发明授权

US08928069B2 Semiconductor device, and method of manufacturing the same 有权
公开(公告)号：US08928069B2
公开(公告)日：2015-01-06
申请号：US13470859
申请日：2012-05-14
申请人： Yuki Fukui , Hiroaki Katou
发明人： Yuki Fukui , Hiroaki Katou
IPC分类号： H01L29/78 , H01L21/336 , H01L29/417 , H01L21/8234 , H01L27/092
摘要： The generation of a variation in properties of vertical transistors is restrained. A vertical MOS transistor is formed in a semiconductor substrate. A first interlayer dielectric film and a first source wiring are formed over the front surface of the substrate. The first source wiring is formed over the first interlayer dielectric film, and is overlapped with the vertical MOS transistor as viewed in plan. Contacts are buried in the first interlayer dielectric film. Through the contacts, an n-type source layer of vertical MOS transistor is coupled with the first source wiring. Openings are made in the first source wiring.

4. 发明授权

US08969951B2 Semiconductor device, and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08969951B2
公开(公告)日：2015-03-03
申请号：US13470859
申请日：2012-05-14
申请人： Yuki Fukui , Hiroaki Katou
发明人： Yuki Fukui , Hiroaki Katou
IPC分类号： H01L29/78 , H01L21/336 , H01L29/417 , H01L21/8234 , H01L27/092
CPC分类号： H01L21/324 , H01L21/823487 , H01L23/4824 , H01L27/0922 , H01L29/41741 , H01L29/66666 , H01L29/7813 , H01L29/7815 , H01L2924/0002 , H01L2924/00
摘要： The generation of a variation in properties of vertical transistors is restrained. A vertical MOS transistor is formed in a semiconductor substrate. A first interlayer dielectric film and a first source wiring are formed over the front surface of the substrate. The first source wiring is formed over the first interlayer dielectric film, and is overlapped with the vertical MOS transistor as viewed in plan. Contacts are buried in the first interlayer dielectric film. Through the contacts, an n-type source layer of vertical MOS transistor is coupled with the first source wiring. Openings are made in the first source wiring.
摘要翻译：限制垂直晶体管的性质变化的产生。在半导体衬底中形成垂直MOS晶体管。第一层间电介质膜和第一源极布线形成在基板的前表面上。第一源极布线形成在第一层间电介质膜上，并且与俯视图中的垂直MOS晶体管重叠。触点被埋在第一层间绝缘膜中。通过该触点，垂直MOS晶体管的n型源极层与第一源极配线连接。开口在第一个源极接线中。

5. 发明授权

US08723295B2 Semiconductor device, manufacturing method thereof, electronic device and vehicle 有权
标题翻译：半导体装置及其制造方法，电子装置和车辆
公开(公告)号：US08723295B2
公开(公告)日：2014-05-13
申请号：US13488282
申请日：2012-06-04
申请人： Yuki Fukui , Hiroaki Katou
发明人： Yuki Fukui , Hiroaki Katou
IPC分类号： H01L27/082
CPC分类号： H01L29/7827 , H01L21/823487 , H01L27/088 , H01L27/0922 , H01L29/0847 , H01L29/1095 , H01L29/41741 , H01L29/4236 , H01L29/42372 , H01L29/66666 , H01L29/66734 , H01L29/7397 , H01L29/7788 , H01L29/78 , H01L29/7811 , H01L29/7813
摘要： The present invention makes it possible to inhibit an SOA (Safe Operating Area) in a vertical-type bipolar transistor from narrowing. A p-type base layer 150 includes a first peak, a second peak, and a third peak in an impurity profile in the thickness direction. The first peak is located on the topmost surface side of a semiconductor substrate 100. The second peak is located closer to the bottom face side of the semiconductor substrate 100 than the first peak and higher than the first peak. The third peak is located between the first peak and the second peak.
摘要翻译：本发明使得可以抑制垂直型双极晶体管中的SOA（安全工作区）变窄。 p型基极层150包括在厚度方向上的杂质分布中的第一峰值，第二峰值和第三峰值。第一峰位于半导体基板100的最上表面侧。第二峰位于比第一峰更靠近半导体基板100的底面侧，高于第一峰。第三峰位于第一峰和第二峰之间。

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