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1. 发明申请

US20110079832A1 SOLID-STATE IMAGE PICKUP DEVICE, IMAGE PICKUP APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：固态图像拾取装置，包括其的图像拾取装置及其制造方法
公开(公告)号：US20110079832A1
公开(公告)日：2011-04-07
申请号：US12892017
申请日：2010-09-28
申请人： Atsushi Masagaki , Ikuhiro Yamamura
发明人： Atsushi Masagaki , Ikuhiro Yamamura
IPC分类号： H01L31/062 , H01L31/18
CPC分类号： H01L27/14609 , H01L27/14612 , H01L27/14643 , H01L27/14689
摘要： A solid-state image pickup device includes: a semiconductor substrate; and a plurality of pixel circuits formed on the semiconductor substrate; each of the plurality of pixel circuits formed on the semiconductor substrate including a photoelectric conversion element, a first buried gate electrode formed adjacent to the photoelectric conversion element, a second buried gate electrode formed away from each of the photoelectric conversion element and the first buried gate electrode, a first diffusion layer formed between the first buried gate electrode and the second buried gate electrode, and a second diffusion layer formed between the first buried gate electrode and the second buried gate electrode away from the first diffusion layer so as to overlap the first diffusion layer; wherein electric charges accumulated in the photodiode conversion element are transferred to the second diffusion layer through the first diffusion layer.
摘要翻译：固体摄像装置包括：半导体衬底; 以及形成在所述半导体衬底上的多个像素电路; 形成在包括光电转换元件的半导体衬底上的多个像素电路中的每一个，与光电转换元件相邻形成的第一掩埋栅极电极，远离光电转换元件和第一掩埋栅极电极，形成在第一掩埋栅极电极和第二掩埋栅极电极之间的第一扩散层，以及形成在第一掩埋栅极电极和第二掩埋栅极电极之间的第二扩散层，远离第一扩散层，扩散层; 其中累积在所述光电二极管转换元件中的电荷通过所述第一扩散层传递到所述第二扩散层。

2. 发明申请

US20100136738A1 SOLID-STATE IMAGING DEVICE, SOLID-STATE IMAGING APPARATUS AND METHODS FOR MANUFACTURING THE SAME 有权
标题翻译：固态成像装置，固态成像装置及其制造方法
公开(公告)号：US20100136738A1
公开(公告)日：2010-06-03
申请号：US12703105
申请日：2010-02-09
申请人： Ikuhiro Yamamura
发明人： Ikuhiro Yamamura
IPC分类号： H01L31/18
CPC分类号： H01L27/14636 , H01L27/1462 , H01L27/14623 , Y10S438/927
摘要： To arrange diffusion-inhibitory films 5a, 5b, and 5c for inhibiting the diffusion of a wiring material absent in a region on or above a light receiving unit 2,the diffusion-inhibitory films 5a, 5b, and 5c formed on a region above the light receiving unit 2 are selectively removed. Alternatively, the diffusion-inhibitory films are arranged only on top surfaces of wirings 4a, 4b, and 4c, and only a passivation film 12 and interlayer insulating films 3a, 3b, and 3c are arranged in the region on or above the light receiving unit 2. Thus, with less interface between different insulation films and less reflection of incident light in an incident region, the incident light 13 highly efficiently passes through these insulating films and comes into the light receiving unit 2. The light receiving unit 2 can thereby receive a sufficient quantity of the incident light 13.
摘要翻译：为了配置用于抑制不在光接收单元2上或上方的区域中的布线材料的扩散的扩散抑制膜5a，5b和5c，形成在上述区域上方的扩散抑制膜5a，5b，5c 光接收单元2被选择性地去除。或者，扩散抑制膜仅布置在布线4a，4b和4c的顶表面上，并且仅在光接收单元上或上方的区域中布置钝化膜12和层间绝缘膜3a，3b和3c 因此，通过不同的绝缘膜之间的界面较少，入射区域的入射光的反射较少，入射光13高效地通过这些绝缘膜并进入光接收单元2.因此，光接收单元2可以接收足够量的入射光13。

3. 发明授权

US07474583B2 Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US07474583B2
公开(公告)日：2009-01-06
申请号：US11645583
申请日：2006-12-27
申请人： Ikuhiro Yamamura
发明人： Ikuhiro Yamamura
IPC分类号： G11C5/14
CPC分类号： G11C11/412 , G11C5/145
摘要： A semiconductor memory device has SRAM cells each including: a pair of inverters; a feed control switch connected between a feeding point of the pair of inverters and a power supply voltage supply line; and a boosting device configured to boost a voltage of the feeding point electrically isolated from the power supply voltage supply line by the feed control switch.
摘要翻译：半导体存储器件具有SRAM单元，每个SRAM单元包括：一对反相器; 连接在所述一对逆变器的馈电点和电源电压供给线之间的馈电控制开关; 以及升压装置，其被配置为通过所述进给控制开关来提升与所述电源电压供给线电绝缘的所述馈电点的电压。

4. 发明授权

US06403421B1 Semiconductor nonvolatile memory device and method of producing the same 有权
标题翻译：半导体非易失性存储器件及其制造方法，包括在隔离绝缘膜上形成浮栅的部分
公开(公告)号：US06403421B1
公开(公告)日：2002-06-11
申请号：US09583906
申请日：2000-05-31
申请人： Naoshi Ikeda , Ikuhiro Yamamura , Hidetoshi Yamanaka
发明人： Naoshi Ikeda , Ikuhiro Yamamura , Hidetoshi Yamanaka
IPC分类号： H01L21336
CPC分类号： H01L27/11521 , H01L27/115
摘要： A semiconductor nonvolatile memory device using SA-STI cells improved in quality and suitable for increasing the degree of integration is provided with a semiconductor substrate having in its surface a channel formation region; an element isolation insulating film buried in a trench formed in the semiconductor substrate so as to divide the channel formation region into a plurality of regions; a gate insulating film formed on the channel formation region; a floating gate provided with a first floating gate formed at an upper layer of the gate insulating film and second floating gates formed at facing sides of the same; an inter-layer insulating film formed at an upper layer of the first floating gate and the second floating gates; a control gate formed at an upper layer of the inter-layer insulating film; and a source-drain region former connected to the channel formation region.
摘要翻译：使用在其表面具有沟道形成区域的半导体衬底设置使用质量提高并适于增加集成度的SA-STI单元的半导体非易失性存储器件; 掩模在半导体衬底中形成的沟槽中的元件隔离绝缘膜，以便将沟道形成区域分成多个区域; 形成在沟道形成区上的栅极绝缘膜; 设置有形成在栅绝缘膜的上层的第一浮栅和形成在其相对侧的第二浮栅的浮置栅; 形成在第一浮动栅极和第二浮动栅极的上层的层间绝缘膜; 形成在所述层间绝缘膜的上层的控制栅极; 以及连接到沟道形成区的源极 - 漏极区前体。

5. 发明授权

US08952432B2 Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus 有权
标题翻译：固态成像装置，制造固态成像装置的方法和电子装置
公开(公告)号：US08952432B2
公开(公告)日：2015-02-10
申请号：US13050156
申请日：2011-03-17
申请人： Yusuke Oike , Takahiro Kawamura , Shinya Yamakawa , Ikuhiro Yamamura , Takashi Machida , Yasunori Sogoh , Naoki Saka
发明人： Yusuke Oike , Takahiro Kawamura , Shinya Yamakawa , Ikuhiro Yamamura , Takashi Machida , Yasunori Sogoh , Naoki Saka
IPC分类号： H01L31/113 , H01L27/146 , H04N5/353 , H04N5/3745 , H04N5/363
CPC分类号： H01L27/14612 , H01L27/14601 , H01L27/14616 , H01L27/14643 , H01L27/14656 , H01L27/14689 , H01L27/14806 , H01L27/14862 , H04N5/353 , H04N5/363 , H04N5/37452
摘要： Disclosed herein is a solid-state imaging device including a photoelectric conversion element operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof, an electric-charge holding region in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out, and a transfer gate having a complete transfer path through which the electric charge accumulated in the photoelectric conversion element is completely transferred into the electric-charge holding region, and an intermediate transfer path through which the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined charge amount is transferred into the electric-charge holding region. The complete transfer path and the intermediate transfer path are formed in different regions.
摘要翻译：本文公开了一种固态成像装置，其包括光电转换元件，该光电转换元件可操作以根据入射光量产生电荷并在其内积累电荷;电荷保持区域，其中通过通过光电转换元件的光电转换被保持直到读出，并且具有完全转移光电转换元件中的电荷的完整传输路径的传输门完全转移到电荷保持区域中，并且通过在曝光期间由光电转换元件产生的电量超过预定电荷量的电荷转移到电荷保持区域中。完整的传送路径和中间传送路径形成在不同的区域中。

6. 发明授权

US07465965B2 Transistor controlled thyristor memory device 失效
标题翻译：晶体管控制晶闸管存储器件
公开(公告)号：US07465965B2
公开(公告)日：2008-12-16
申请号：US11512313
申请日：2006-08-30
申请人： Ikuhiro Yamamura
发明人： Ikuhiro Yamamura
IPC分类号： H01L29/74
CPC分类号： H01L27/1027 , H01L27/11
摘要： A semiconductor device including: a bulk semiconductor substrate; an access transistor; a thruster formed on the bulk semiconductor substrate connecting to the access transistor; an element separating region to separate the region for the access transistor and the region for the thruster from each other; and a wiring layer connecting one of the diffused layers of the access transistor and the cathode of the thruster together through a connecting hole, the impurity region at the anode side of the thruster being composed of a p-type impurity region, an n-type impurity region, p-type impurity region, and an n-type impurity region, which are formed sequentially in the depth wise direction, with the lowermost n-type impurity region receiving the same voltage as that applied to the anode at the time of data holding.
摘要翻译：一种半导体器件，包括：体半导体衬底; 存取晶体管; 形成在连接到存取晶体管的体半导体衬底上的推进器; 元件分离区域，用于将用于存取晶体管的区域和用于推进器的区域彼此分离; 以及通过连接孔将存取晶体管的一个扩散层和推进器的阴极连接在一起的布线层，推进器的阳极侧的杂质区域由p型杂质区域，n型杂质区域，p型杂质区域和n型杂质区域，其在深度方向依次形成，最低n型杂质区域在数据时接收与施加到阳极的电压相同的电压保持。

7. 发明申请

US20070127298A1 Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US20070127298A1
公开(公告)日：2007-06-07
申请号：US11645583
申请日：2006-12-27
申请人： Ikuhiro Yamamura
发明人： Ikuhiro Yamamura
IPC分类号： G11C5/14
CPC分类号： G11C11/412 , G11C5/145
摘要： A semiconductor memory device has SRAM cells each including: a pair of inverters; a feed control switch connected between a feeding point of the pair of inverters and a power supply voltage supply line; and a boosting device configured to boost a voltage of the feeding point electrically isolated from the power supply voltage supply line by the feed control switch.
摘要翻译：半导体存储器件具有SRAM单元，每个SRAM单元包括：一对反相器; 连接在所述一对逆变器的馈电点和电源电压供给线之间的馈电控制开关; 以及升压装置，其被配置为通过所述进给控制开关来提升与所述电源电压供给线电绝缘的所述馈电点的电压。

8. 发明申请

US20070075343A1 Solid-state imaging device, solid-state imaging apparatus and methods for manufacturing the same 有权
标题翻译：固态成像装置，固态成像装置及其制造方法
公开(公告)号：US20070075343A1
公开(公告)日：2007-04-05
申请号：US11607756
申请日：2006-11-30
申请人： Ikuhiro Yamamura
发明人： Ikuhiro Yamamura
IPC分类号： H01L31/113
CPC分类号： H01L27/14636 , H01L27/1462 , H01L27/14623 , Y10S438/927
摘要： To arrange diffusion-inhibitory films 5a, 5b, and 5c for inhibiting the diffusion of a wiring material absent in a region on or above a light receiving unit 2, the diffusion-inhibitory films 5a, 5b, and 5c formed on a region above the light receiving unit 2 are selectively removed. Alternatively, the diffusion-inhibitory films are arranged only on top surfaces of wirings 4a, 4b, and 4c, and only a passivation film 12 and interlayer insulating films 3a, 3b, and 3c are arranged in the region on or above the light receiving unit 2. Thus, with less interface between different insulation films and less reflection of incident light in an incident region, the incident light 13 highly efficiently passes through these insulating films and comes into the light receiving unit 2. The light receiving unit 2 can thereby receive a sufficient quantity of the incident light 13.
摘要翻译：为了配置用于抑制在光接收单元2上或上方的区域中不存在的布线材料的扩散的扩散抑制膜5a，5b和5c，扩散抑制膜5a，5b和5c 形成在光接收单元2上方的区域上。或者，扩散抑制膜仅布置在布线4a，4b和4c的顶表面上，并且只有钝化膜12和层间绝缘膜3a，3b和3c布置在或者在光接收单元2上方。因此，由于不同绝缘膜之间的界面较少，入射区域的入射光反射较少，所以入射光13高效地通过这些绝缘膜并进入光接收单元2.光接收单元2可以由此接收足够数量的入射光13。

9. 发明授权

US08519456B2 Solid-state image pickup device, image pickup apparatus including the same, and method of manufacturing the same 有权
标题翻译：固态图像拾取装置，包括该固态图像拾取装置的图像拾取装置及其制造方法
公开(公告)号：US08519456B2
公开(公告)日：2013-08-27
申请号：US12892017
申请日：2010-09-28
申请人： Atsushi Masagaki , Ikuhiro Yamamura
发明人： Atsushi Masagaki , Ikuhiro Yamamura
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14609 , H01L27/14612 , H01L27/14643 , H01L27/14689
摘要： A solid-state image pickup device in which electric charges accumulated in a photodiode conversion element are transferred to a second diffusion layer through a first diffusion layer.
摘要翻译：其中积聚在光电二极管转换元件中的电荷通过第一扩散层转移到第二扩散层的固态图像拾取器件。

10. 发明授权

US07759712B2 Solid-state imaging device, solid-state imaging apparatus and methods for manufacturing the same 有权
标题翻译：固态成像装置，固态成像装置及其制造方法
公开(公告)号：US07759712B2
公开(公告)日：2010-07-20
申请号：US11607756
申请日：2006-11-30
申请人： Ikuhiro Yamamura
发明人： Ikuhiro Yamamura
IPC分类号： H01L31/062
CPC分类号： H01L27/14636 , H01L27/1462 , H01L27/14623 , Y10S438/927
摘要： To arrange diffusion-inhibitory films 5a, 5b, and 5c for inhibiting the diffusion of a wiring material absent in a region on or above a light receiving unit 2, the diffusion-inhibitory films 5a, 5b, and 5c formed on a region above the light receiving unit 2 are selectively removed. Alternatively, the diffusion-inhibitory films are arranged only on top surfaces of wirings 4a, 4b, and 4c, and only a passivation film 12 and interlayer insulating films 3a, 3b, and 3c are arranged in the region on or above the light receiving unit 2. Thus, with less interface between different insulation films and less reflection of incident light in an incident region, the incident light 13 highly efficiently passes through these insulating films and comes into the light receiving unit 2. The light receiving unit 2 can thereby receive a sufficient quantity of the incident light 13.
摘要翻译：为了配置用于抑制不在光接收单元2上或上方的区域中的布线材料的扩散的扩散抑制膜5a，5b和5c，形成在上述区域上方的扩散抑制膜5a，5b，5c 光接收单元2被选择性地去除。或者，扩散抑制膜仅布置在布线4a，4b和4c的顶表面上，并且仅在光接收单元上或上方的区域中布置钝化膜12和层间绝缘膜3a，3b和3c 因此，通过不同的绝缘膜之间的界面较少，入射区域的入射光的反射较少，入射光13高效地通过这些绝缘膜并进入光接收单元2.因此，光接收单元2可以接收足够量的入射光13。

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