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1. 发明公开

US20240154020A1 SEMICONDUCTOR DEVICE INCLUDING ACTIVE DIODE AREA 审中-公开
公开(公告)号：US20240154020A1
公开(公告)日：2024-05-09
申请号：US18500635
申请日：2023-11-02
申请人： Infineon Technologies AG
发明人： Benedikt Stoib , Hans-Joachim Schulze , Marten Müller , Daniel Schlögl , Moriz Jelinek , Holger Schulze
IPC分类号： H01L29/66 , H01L29/06 , H01L29/861
CPC分类号： H01L29/66136 , H01L29/0615 , H01L29/8611
摘要： A semiconductor device includes a semiconductor body having first and second opposite surfaces along a vertical direction, and an active diode area. The active diode area includes: a p-doped anode region adjoining the first surface; an n-doped drift region between the anode region and the second surface; an n-doped cathode contact region adjoining the second surface; a p-doped injection region adjoining the second surface and the cathode contact region; and a p-doped auxiliary region between the drift region and the cathode contact region. The auxiliary region includes first and second sub-regions. In a top view, the first sub-region covers at least part of the injection region and the second sub-region covers at least part of the cathode contact region. In the top view, the auxiliary region includes a plurality of openings covering from 0.1% to an 20% of a surface area of the active diode area at the second surface.

2. 发明申请

US20230125859A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLANTATION AND SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20230125859A1
公开(公告)日：2023-04-27
申请号：US17974592
申请日：2022-10-27
申请人： Infineon Technologies AG
发明人： Daniel Schlögl , Hans-Joachim Schulze , Moriz Jelinek , Francisco Javier Santos Rodriguez
IPC分类号： H01L21/265 , H01L29/06 , H01L21/324
摘要： A method of manufacturing a semiconductor device in a semiconductor body having a first surface and a second surface is proposed. The method includes implanting protons through the second surface into the semiconductor body. The method further includes implanting ions through the second surface into the semiconductor body. The ions are ions of a non-doping element having an atomic number of at least 9. Thereafter, the method further includes processing the semiconductor body by thermal annealing.

3. 发明公开

US20240047457A1 Power Semiconductor Device, Method of Producing a Power Semiconductor Device and Method of Operating a Power Semiconductor Device 审中-公开
公开(公告)号：US20240047457A1
公开(公告)日：2024-02-08
申请号：US18361260
申请日：2023-07-28
申请人： Infineon Technologies AG
发明人： Francisco Javier Santos Rodriguez , Roman Baburske , Hans-Joachim Schulze , Daniel Schlögl
IPC分类号： H01L27/088 , H01L21/822
CPC分类号： H01L27/088 , H01L21/8221 , H03K17/567
摘要： A power semiconductor device includes at a first side and electrically isolated from first and second load terminals, first control electrodes for controlling a load current in first semiconductor channel structures formed in an active region at the first side, and at a second side and electrically isolated from the first and second load terminals, second control electrodes for controlling the load current in second semiconductor channel structures formed in the active region at the second side. At the second side and in a contiguous area of modified control (AMC) belonging to the active region and having a lateral extension of at least 30% of a thickness of a semiconductor body of the device, either no second control electrodes are provided or the second control electrodes are less effective in removing free charge carriers out of the power semiconductor device than the second control electrodes outside the AMC.

4. 发明授权

US09287165B2 Semiconductor device and method for producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09287165B2
公开(公告)日：2016-03-15
申请号：US13927923
申请日：2013-06-26
申请人： Infineon Technologies AG
发明人： Gerhard Schmidt , Matthias Müller , Francisco Javier Santos Rodriguez , Daniel Schlögl
IPC分类号： H01L21/76 , H01L21/768 , H01L29/06
CPC分类号： H01L21/76841 , H01L29/0615 , H01L29/0619
摘要： A power semiconductor device includes a semiconductor body, having an active zone and a high voltage peripheral zone laterally adjacent to each other, the high voltage peripheral zone laterally surrounding the active zone. The device further includes a metallization layer on a front surface of the semiconductor body and connected to the active zone, a first barrier layer, comprising a high-melting metal or a high-melting alloy, between the active zone and the metallization layer, and a second barrier layer covering at least a part of the peripheral zone, the second barrier layer comprising an amorphous semi-isolating material. The first barrier layer and the second barrier layer partially overlap and form an overlap zone. The overlap zone extends over an entire circumference of the active zone. A method for producing such a power semiconductor device is also provided.
摘要翻译：功率半导体器件包括具有横向相邻的有源区和高电压周边区的半导体本体，所述高电压周边区横向围绕有源区。该器件还包括在半导体主体的前表面上并连接到有源区的金属化层，在活性区和金属化层之间包含高熔点金属或高熔点合金的第一阻挡层，以及覆盖所述周边区域的至少一部分的第二阻挡层，所述第二阻挡层包括非晶半隔离材料。第一阻挡层和第二阻挡层部分地重叠并形成重叠区域。重叠区域在活动区域的整个圆周上延伸。还提供了一种用于制造这种功率半导体器件的方法。

5. 发明公开

US20230317456A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20230317456A1
公开(公告)日：2023-10-05
申请号：US18127732
申请日：2023-03-29
申请人： Infineon Technologies AG
发明人： Moriz Jelinek , Hans-Joachim Schulze , Werner Schustereder , Daniel Schlögl , Francisco Javier Santos Rodriguez
IPC分类号： H01L21/265 , H01L21/04 , H01L21/268 , H01L29/20 , H01L21/78 , H01L21/768
CPC分类号： H01L21/265 , H01L21/046 , H01L21/268 , H01L29/20 , H01L21/78 , H01L21/76838
摘要： A method of manufacturing a semiconductor device in a semiconductor body having a first surface and a second surface is proposed. Semiconductor device elements are formed in the semiconductor body by processing the semiconductor body at the first surface. A wiring area is formed over the first surface of the semiconductor body. The semiconductor body is attached to a carrier via the wiring area. Thereafter, ions are implanted through the second surface into the semiconductor body. The ions are ions of a doping element, or ions, which induce doping by complex formation, or ions of a heavy metal. A surface region of the semiconductor body at the second surface is irradiated with a plurality of laser pulses. Thereafter, the carrier is removed from the semiconductor body.

6. 发明申请

US20150001719A1 Semiconductor Device and Method for Producing the Same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20150001719A1
公开(公告)日：2015-01-01
申请号：US13927923
申请日：2013-06-26
申请人： Infineon Technologies AG
发明人： Gerhard Schmidt , Matthias Müller , Francisco Javier Santos Rodriguez , Daniel Schlögl
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L21/76841 , H01L29/0615 , H01L29/0619
摘要： A power semiconductor device includes a semiconductor body, having an active zone and a high voltage peripheral zone laterally adjacent to each other, the high voltage peripheral zone laterally surrounding the active zone. The device further includes a metallization layer on a front surface of the semiconductor body and connected to the active zone, a first barrier layer, comprising a high-melting metal or a high-melting alloy, between the active zone and the metallization layer, and a second barrier layer covering at least a part of the peripheral zone, the second barrier layer comprising an amorphous semi-isolating material. The first barrier layer and the second barrier layer partially overlap and form an overlap zone. The overlap zone extends over an entire circumference of the active zone. A method for producing such a power semiconductor device is also provided.
摘要翻译：功率半导体器件包括具有横向相邻的有源区和高电压周边区的半导体本体，所述高电压周边区横向围绕有源区。该器件还包括在半导体主体的前表面上并连接到有源区的金属化层，在活性区和金属化层之间包括高熔点金属或高熔点合金的第一阻挡层，以及覆盖所述周边区域的至少一部分的第二阻挡层，所述第二阻挡层包括非晶半隔离材料。第一阻挡层和第二阻挡层部分地重叠并形成重叠区域。重叠区域在活动区域的整个圆周上延伸。还提供了一种用于制造这种功率半导体器件的方法。

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