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1. 发明授权

US11092538B2 Wafer arrangement for gas sensor 有权
公开(公告)号：US11092538B2
公开(公告)日：2021-08-17
申请号：US16944279
申请日：2020-07-31
申请人： Infineon Technologies AG , Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.
发明人： Stefan Kolb , Alfons Dehe , Jochen Huber , Franz Jost , Horst Theuss , Wilhelm Wiedmeier , Juergen Woellenstein
IPC分类号： G01N21/17 , G01N29/24 , G01N29/02 , G01N29/30
摘要： A gas sensor includes a multi-wafer stack of a plurality of layers and a measurement chamber. The plurality of layers includes a first layer comprising a sensor element that has a microelectromechanical system (MEMS) membrane; and a second layer comprising an emitter element configured to emit electromagnetic radiation. The measurement chamber is interposed between the first layer and the second layer. The measurement chamber is configured to receive a measurement gas and further receive the electromagnetic radiation emitted by the emitter element as the electromagnetic radiation travels along a radiation path from a first end of the measurement chamber to a second end of the measurement chamber that is opposite to the first end.

2. 发明授权

US10246325B2 MEMS device and method for manufacturing a MEMS device 有权
公开(公告)号：US10246325B2
公开(公告)日：2019-04-02
申请号：US14832001
申请日：2015-08-21
申请人： Infineon Technologies AG
发明人： Stefan Kolb , Andreas Meiser , Till Schloesser , Wolfgang Werner
IPC分类号： B81B3/00 , B81C1/00 , H01L21/00
摘要： A method for producing a MEMS device comprises forming a semiconductor layer stack, the semiconductor layer stack comprising at least a first monocrystalline semiconductor layer, a second monocrystalline semiconductor layer and a third monocrystalline semiconductor layer, the second monocrystalline semiconductor layer formed between the first and third monocrystalline semiconductor layers. A semiconductor material of the second monocrystalline semiconductor layer is different from semiconductor materials of the first and third monocrystalline semiconductor layers. After forming the semiconductor layer stack, at least a portion of each of the first and third monocrystalline semiconductor layers is concurrently etched.

3. 发明授权

US09818934B2 Hall effect device 有权
公开(公告)号：US09818934B2
公开(公告)日：2017-11-14
申请号：US15349004
申请日：2016-11-11
申请人： Infineon Technologies AG
发明人： Stefan Kolb , Markus Eckinger
IPC分类号： G01R33/07 , H01L27/22 , H01L29/82 , H01L43/06 , G01R33/00 , H01L43/14 , H01L43/04
CPC分类号： H01L43/065 , G01R33/0035 , G01R33/0052 , G01R33/07 , G01R33/075 , H01L27/22 , H01L43/04 , H01L43/14
摘要： A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.

4. 发明授权

US09658179B2 System and method for a MEMS transducer 有权
公开(公告)号：US09658179B2
公开(公告)日：2017-05-23
申请号：US14749102
申请日：2015-06-24
申请人： Infineon Technologies AG
发明人： Vijaye Kumar Rajaraman , Yonsuang Arnanthigo , Alfons Dehe , Stefan Kolb
IPC分类号： G01N27/22 , B81C1/00 , B81B3/00
CPC分类号： B81B7/02 , B81B3/0018 , B81B2201/0214 , B81B2201/0257 , B81B2201/0278 , B81C1/00166 , B81C1/00182 , B81C1/00206 , G01N27/223 , H04R19/005 , H04R19/04 , H04R31/003 , H04R2201/003
摘要： According to an embodiment, a microelectromechanical systems (MEMS) transducer includes a substrate with a first cavity that passes through the substrate from a backside of the substrate. The MEMS transducer also includes a perforated first electrode plate overlying the first cavity on a topside of the substrate, a second electrode plate overlying the first cavity on the topside of the substrate and spaced apart from the perforated first electrode plate by a spacing region, and a gas sensitive material in the spacing region between the perforated first electrode plate and the second electrode plate. The gas sensitive material has an electrical property that is dependent on a concentration of a target gas.

5. 发明申请

US20160377569A1 System and Method for a MEMS Transducer 有权
标题翻译： MEMS传感器的系统和方法
公开(公告)号：US20160377569A1
公开(公告)日：2016-12-29
申请号：US14749102
申请日：2015-06-24
申请人： Infineon Technologies AG
发明人： Vijaye Kumar Rajaraman , Yonsuang Arnanthigo , Alfons Dehe , Stefan Kolb
IPC分类号： G01N27/22 , B81C1/00 , B81B3/00
CPC分类号： B81B7/02 , B81B3/0018 , B81B2201/0214 , B81B2201/0257 , B81B2201/0278 , B81C1/00166 , B81C1/00182 , B81C1/00206 , G01N27/223 , H04R19/005 , H04R19/04 , H04R31/003 , H04R2201/003
摘要： According to an embodiment, a microelectromechanical systems (MEMS) transducer includes a substrate with a first cavity that passes through the substrate from a backside of the substrate. The MEMS transducer also includes a perforated first electrode plate overlying the first cavity on a topside of the substrate, a second electrode plate overlying the first cavity on the topside of the substrate and spaced apart from the perforated first electrode plate by a spacing region, and a gas sensitive material in the spacing region between the perforated first electrode plate and the second electrode plate. The gas sensitive material has an electrical property that is dependent on a concentration of a target gas.
摘要翻译：根据实施例，微机电系统（MEMS）换能器包括具有第一空腔的衬底，该衬底从衬底的背面穿过衬底。所述MEMS换能器还包括覆盖所述基底顶面上的所述第一空腔的穿孔第一电极板，覆盖所述基底的顶侧上的所述第一空腔并且与穿孔的第一电极板间隔开间隔区域的第二电极板，以及在穿孔的第一电极板和第二电极板之间的间隔区域中的气体敏感材料。气体敏感材料具有取决于目标气体浓度的电性质。

6. 发明申请

US20150353344A1 CAVITY STRUCTURES FOR MEMS DEVICES 审中-公开
标题翻译： MEMS器件的CAVITY结构
公开(公告)号：US20150353344A1
公开(公告)日：2015-12-10
申请号：US14832426
申请日：2015-08-21
申请人： Infineon Technologies AG
发明人： Bernhard Winkler , Andreas Zankl , Klemens Pruegl , Stefan Kolb
IPC分类号： B81B7/00 , B81C1/00
CPC分类号： B81B7/008 , B81B2201/0264 , B81B2203/0315 , B81B2207/015 , B81C1/00158 , B81C1/00246 , B81C2203/0707 , B81C2203/0714 , B81C2203/0735 , B81C2203/0771 , H01L27/0611
摘要： Embodiments relate to MEMS devices and methods for manufacturing MEMS devices. In one embodiment, the manufacturing includes forming a monocrystalline sacrificial layer on a non-silicon-on-insulator (non-SOI) substrate, patterning the monocrystalline sacrificial layer such that the monocrystalline sacrificial layer remains in a first portion and is removed in a second portion lateral to the first portion; depositing a first silicon layer, the first silicon layer deposited on the remaining monocrystalline sacrificial layer and further lateral to the first portion; removing at least a portion of the monocrystalline sacrificial layer via at least one release aperture in the first silicon layer to form a cavity and sealing the cavity.
摘要翻译：实施例涉及用于制造MEMS器件的MEMS器件和方法。在一个实施例中，制造包括在绝缘体上非绝缘体（非SOI）衬底上形成单晶牺牲层，图案化单晶牺牲层，使得单晶牺牲层保持在第一部分中并在第二部分中被去除部分横向于第一部分; 沉积第一硅层，所述第一硅层沉积在剩余的单晶牺牲层上，并且进一步横向于所述第一部分; 通过所述第一硅层中的至少一个释放孔去除所述单晶牺牲层的至少一部分，以形成空腔并密封所述空腔。

7. 发明申请

US20150101395A1 PHOTOACOUSTIC GAS SENSOR DEVICE AND A METHOD FOR ANALYZING GAS 有权
标题翻译：光电气体传感器装置及分析气体的方法
公开(公告)号：US20150101395A1
公开(公告)日：2015-04-16
申请号：US14052959
申请日：2013-10-14
申请人： INFINEON TECHNOLOGIES AG
发明人： Alfons Dehe , Stefan Kolb , Horst Theuss
IPC分类号： G01N29/24
CPC分类号： G01N29/2425 , G01N21/1702 , G01N29/2418 , G01N29/30 , G01N2021/1704 , G01N2291/021
摘要： A photoacoustic gas sensor device for analyzing gas includes an emitter module and a pressure-sensitive module. The emitter module is arranged on a carrier substrate and emits light pulses. The pressure-sensitive module is arranged on the carrier substrate within a reference gas volume. The reference gas volume is separated from a volume intended to be filled with a gas to be analyzed. Further, the pressure-sensitive module generates a sensor signal indicating information on an acoustic wave caused by light pulses emitted by the emitter module interacting with a reference gas within the reference gas volume. Additionally, the emitter module is arranged so that light pulses emitted by the emitter module reach the reference gas volume after crossing the volume intended to be filled with the gas to be analyzed.
摘要翻译：用于分析气体的光声气体传感器装置包括发射器模块和压敏模块。发射器模块布置在载体衬底上并发射光脉冲。压敏模块布置在载体基板上的参考气体体积内。将参考气体体积与要被分析的气体填充的体积分离。此外，压敏模块产生传感器信号，该传感器信号指示由与参考气体体积内的参考气体相互作用的发射器模块发射的光脉冲引起的声波信息。此外，发射器模块被布置成使得发射器模块发射的光脉冲在穿过要被分析的气体填充的体积之后达到参考气体体积。

8. 发明申请

US20140252422A1 CAVITY STRUCTURES FOR MEMS DEVICES 审中-公开
标题翻译： MEMS器件的CAVITY结构
公开(公告)号：US20140252422A1
公开(公告)日：2014-09-11
申请号：US14281251
申请日：2014-05-19
申请人： Infineon Technologies AG
发明人： Bernhard Winkler , Andreas Zankl , Klemens Pruegl , Stefan Kolb
IPC分类号： B81B7/00 , B81C1/00
CPC分类号： B81B7/008 , B81B2201/0264 , B81B2203/0315 , B81B2207/015 , B81C1/00158 , B81C1/00246 , B81C2203/0707 , B81C2203/0714 , B81C2203/0735 , B81C2203/0771 , H01L27/0611
摘要： Embodiments relate to MEMS devices, particularly MEMS devices integrated with related electrical devices on a single wafer. Embodiments utilize a modular process flow concept as part of a MEMS-first approach, enabling use of a novel cavity sealing process. The impact and potential detrimental effects on the electrical devices by the MEMS processing are thereby reduced or eliminated. At the same time, a highly flexible solution is provided that enables implementation of a variety of measurement principles, including capacitive and piezoresistive. A variety of sensor applications can therefore be addressed with improved performance and quality while remaining cost-effective.
摘要翻译：实施例涉及MEMS器件，特别是与单个晶片上的相关电气器件集成的MEMS器件。实施例利用模块化工艺流程概念作为MEMS首要方法的一部分，使得能够使用新颖的腔体密封过程。因此，通过MEMS处理对电气装置的影响和潜在的有害影响被减少或消除。同时，提供了一种高度灵活的解决方案，可以实现各种测量原理，包括电容式和压阻式。因此，可以在提高性能和质量的同时解决各种传感器应用，同时保持成本效益。

9. 发明授权

US11635410B2 Gas concentration detection by means of thermoacoustic sound wave 有权
公开(公告)号：US11635410B2
公开(公告)日：2023-04-25
申请号：US17446507
申请日：2021-08-31
申请人： Infineon Technologies AG
发明人： Matthias Eberl , Franz Jost , Stefan Kolb
IPC分类号： G01N29/24 , G01N29/024
摘要： A gas sensor having a heater, a receiver, and a space arranged between the heater and the receiver, is described, the heater being configured to generate a thermoacoustic sound wave propagating through the space by using a stimulation signal. The receiver is in this case configured to receive the thermoacoustic sound wave that has propagated through the space and to convert it into a reception signal that has a time-of-flight-dependent shift with respect to the stimulation signal and therefore information relating to the gas concentration in the space.

10. 发明授权

US11530980B2 Wafer arrangement for gas sensor 有权
公开(公告)号：US11530980B2
公开(公告)日：2022-12-20
申请号：US17336663
申请日：2021-06-02
申请人： Infineon Technologies AG , Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.
发明人： Stefan Kolb , Alfons Dehe , Jochen Huber , Franz Jost , Horst Theuss , Wilhelm Wiedmeier , Juergen Woellenstein
IPC分类号： G01N21/17 , G01N29/24 , G01N29/02 , G01N29/30
摘要： A gas sensor includes a multi-wafer stack of a plurality of layers and a measurement chamber. The plurality of layers includes a first layer comprising a sensor element that has a microelectromechanical system (MEMS) membrane; and a second layer comprising an emitter element configured to emit electromagnetic radiation. The measurement chamber is interposed between the first layer and the second layer. The measurement chamber is configured to receive a measurement gas and further receive the electromagnetic radiation emitted by the emitter element as the electromagnetic radiation travels along a radiation path from a first end of the measurement chamber to a second end of the measurement chamber that is opposite to the first end.

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