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1. 发明授权

US09294035B2 Multigate resonant channel transistor 有权
标题翻译：多谐振通道晶体管
公开(公告)号：US09294035B2
公开(公告)日：2016-03-22
申请号：US13994714
申请日：2013-03-28
申请人： Intel Corporation
发明人： Sasikanth Manipatruni , Raseong Kim , Rajashree Baskaran , Rajeev K. Dokania , Ian A. Young
IPC分类号： H03B5/12 , H03B5/30 , H01L29/66 , H01L29/78
CPC分类号： H03B5/30 , H01L29/66795 , H01L29/7831 , H01L2924/13067 , H01L2924/13084
摘要： An embodiment includes an oscillator comprising an amplifier formed on a substrate; a multiple gate resonant channel array, formed on the substrate, including: (a) transistors including fins, each of the fins having a channel between source and drain nodes, coupled to common source and drain contacts; and (b) common first and second tri-gates coupled to each of the fins and located between the source and drain contacts; wherein the fins mechanically resonate at a first frequency when one of the first and second tri-gates is periodically activated to produce periodic downward forces on the fins. Other embodiments include a non planar transistor with a channel between the source and drain nodes and a tri-gate on the fin; wherein the fin mechanically resonates when the first tri-gate is periodically activated to produce periodic downward forces on the fin. Other embodiments are described herein.
摘要翻译：实施例包括：振荡器，包括形成在基板上的放大器; 形成在所述衬底上的多栅极共振沟道阵列包括：（a）包括鳍片的晶体管，每个鳍片在源极和漏极节点之间具有耦合到共源极和漏极触点的沟道; 和（b）共同的第一和第二三栅极，其耦合到每个散热片并且位于源极和漏极接触之间; 其中当第一和第二三门中的一个被周期性地激活以在翅片上产生周期性向下的力时，翅片以第一频率机械共振。其他实施例包括在源极和漏极节点之间具有沟道的非平面晶体管和鳍上的三栅极; 其中当所述第一三栅极被周期性地激活以在所述散热片上产生周期性向下的力时，所述翅片机械谐振。本文描述了其它实施例。

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