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1. 发明授权

US09406547B2 Techniques for trench isolation using flowable dielectric materials 有权
标题翻译：使用可流动电介质材料进行沟槽隔离的技术
公开(公告)号：US09406547B2
公开(公告)日：2016-08-02
申请号：US14139964
申请日：2013-12-24
申请人： INTEL CORPORATION
发明人： Ritesh Jhaveri , Jeanne L. Luce , Sang-Won Park , Dennis G. Hanken
IPC分类号： H01L21/76 , H01L21/762 , H01L29/06 , H01L29/78 , H01L29/66
CPC分类号： H01L21/76224 , H01L21/02164 , H01L21/02219 , H01L21/02222 , H01L21/02274 , H01L21/02323 , H01L21/02326 , H01L21/02337 , H01L21/02343 , H01L21/02345 , H01L21/823431 , H01L27/0924 , H01L29/0649 , H01L29/66795 , H01L29/785
摘要： Techniques are disclosed for providing trench isolation of semiconductive fins using flowable dielectric materials. In accordance with some embodiments, a flowable dielectric can be deposited over a fin-patterned semiconductive substrate, for example, using a flowable chemical vapor deposition (FCVD) process. The flowable dielectric may be flowed into the trenches between neighboring fins, where it can be cured in situ, thereby forming a dielectric layer over the substrate, in accordance with some embodiments. Through curing, the flowable dielectric can be converted, for example, to an oxide, a nitride, and/or a carbide, as desired for a given target application or end-use. In some embodiments, the resultant dielectric layer may be substantially defect-free, exhibiting no or an otherwise reduced quantity of seams/voids. After curing, the resultant dielectric layer can undergo wet chemical, thermal, and/or plasma treatment, for instance, to modify at least one of its dielectric properties, density, and/or etch rate.
摘要翻译：公开了用于使用可流动介电材料提供半导体翅片的沟槽隔离的技术。根据一些实施例，可流动电介质可以例如使用可流动的化学气相沉积（FCVD）工艺沉积在鳍状图案化的半导体衬底上。可流动电介质可以流入相邻散热片之间的沟槽，其中它可以原位固化，从而根据一些实施例在衬底上形成电介质层。通过固化，可以根据给定目标应用或最终用途的需要将可流动电介质转化为例如氧化物，氮化物和/或碳化物。在一些实施例中，所得到的电介质层可以是基本上无缺陷的，没有或以其他方式减少接缝/空隙的量。在固化之后，所得到的介电层可进行湿化学，热和/或等离子体处理，例如改变其介电特性，密度和/或蚀刻速率中的至少一个。

2. 发明授权

US11270995B2 Isolation in integrated circuit devices 有权
公开(公告)号：US11270995B2
公开(公告)日：2022-03-08
申请号：US16483641
申请日：2017-03-05
申请人： Intel Corporation
发明人： Sang-Won Park , Dennis G. Hanken , Sishir Bhowmick , Leonard C. Pipes
IPC分类号： H01L21/76 , H01L27/088 , H01L21/02
摘要： Disclosed herein are techniques for providing isolation in integrated circuit (IC) devices, as well as IC devices and computing systems that utilize such techniques. In some embodiments, a protective layer may be disposed on a structure in an IC device, prior to deposition of additional dielectric material, and the resulting assembly may be treated to form a dielectric layer around the structure.

3. 发明申请

US20220139913A1 ISOLATION IN INTEGRATED CIRCUIT DEVICES 有权
公开(公告)号：US20220139913A1
公开(公告)日：2022-05-05
申请号：US17577834
申请日：2022-01-18
申请人： Intel Corporation
发明人： Sang-Won Park , Dennis G. Hanken , Sishir Bhowmick , Leonard C. Pipes
IPC分类号： H01L27/088 , H01L21/02
摘要： Disclosed herein are techniques for providing isolation in integrated circuit (IC) devices, as well as IC devices and computing systems that utilize such techniques. In some embodiments, a protective layer may be disposed on a structure in an IC device, prior to deposition of additional dielectric material, and the resulting assembly may be treated to form a dielectric layer around the structure.

4. 发明授权

US10147634B2 Techniques for trench isolation using flowable dielectric materials 有权
公开(公告)号：US10147634B2
公开(公告)日：2018-12-04
申请号：US15224987
申请日：2016-08-01
申请人： INTEL CORPORATION
发明人： Ritesh Jhaveri , Jeanne L. Luce , Sang-Won Park , Dennis G. Hanken
IPC分类号： H01L21/762 , H01L29/06 , H01L27/092 , H01L29/78 , H01L29/66 , H01L21/02 , H01L21/8234
摘要： Techniques are disclosed for providing trench isolation of semiconductive fins using flowable dielectric materials. In accordance with some embodiments, a flowable dielectric can be deposited over a fin-patterned semiconductive substrate, for example, using a flowable chemical vapor deposition (FCVD) process. The flowable dielectric may be flowed into the trenches between neighboring fins, where it can be cured in situ, thereby forming a dielectric layer over the substrate, in accordance with some embodiments. Through curing, the flowable dielectric can be converted, for example, to an oxide, a nitride, and/or a carbide, as desired for a given target application or end-use. In some embodiments, the resultant dielectric layer may be substantially defect-free, exhibiting no or an otherwise reduced quantity of seams/voids. After curing, the resultant dielectric layer can undergo wet chemical, thermal, and/or plasma treatment, for instance, to modify at least one of its dielectric properties, density, and/or etch rate.

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