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1. 发明申请

US20210336345A1 RECONFIGURABLE GEOMETRIC METASURFACES WITH OPTICALLY TUNABLE MATERIALS 有权
公开(公告)号：US20210336345A1
公开(公告)日：2021-10-28
申请号：US17371975
申请日：2021-07-09
申请人： International Business Machines Corporation
发明人： Abram L. Falk , Jessie Carrigan Rosenberg , Kafai Lai , Damon Brooks Farmer
IPC分类号： H01Q9/04 , H01Q3/30 , H01Q3/44
摘要： A semiconductor structure comprises a substrate, a patch of optically tunable material disposed over the substrate, a first electrode coupled to the patch of optically tunable material and a switch providing a current source, and a second electrode coupled to the patch of optically tunable material and a ground voltage. The first electrode and the second electrode are configured to modify a state of the patch of optically tunable material to adjust a reflectivity of the patch of optically tunable material.

2. 发明授权

US10949601B2 Reducing chemoepitaxy directed self-assembled defects 有权
公开(公告)号：US10949601B2
公开(公告)日：2021-03-16
申请号：US16729706
申请日：2019-12-30
申请人： International Business Machines Corporation
发明人： Michael A. Guillorn , Kafai Lai , Chi-Chun Liu , Ananthan Raghunathan , Hsinyu Tsai
IPC分类号： G06F30/398 , G06F30/39 , H01L29/66 , G06F119/18
摘要： A method for reducing chemo-epitaxy directed-self assembly (DSA) defects of a layout of a guiding pattern, the method comprising expanding a shape of the guiding pattern by a predetermined distance in both lateral directions to form a fin keep mask, where the fin keep mask comprises a stand-alone mask.

3. 发明申请

US20210050515A1 ELECTRICALLY ROTATABLE ANTENNAS FORMED FROM AN OPTICALLY TUNABLE MATERIAL 有权
公开(公告)号：US20210050515A1
公开(公告)日：2021-02-18
申请号：US16541866
申请日：2019-08-15
申请人： International Business Machines Corporation
发明人： Abram L. Falk , Jessie Carrigan Rosenberg , Damon Brooks Farmer , Kafai Lai
IPC分类号： H01L45/00 , H01Q3/44 , H01Q3/01 , H01Q1/22
摘要： An apparatus includes two or more electrically rotatable antennas providing a reconfigurable metasurface, each of the electrically rotatable antennas including a disk of optically tunable material. The apparatus also includes a control circuit including a plurality of switches each coupled to (i) one of a plurality of electrodes, the plurality of electrodes being arranged proximate different portions of at least one surface of each of the disks of optically tunable material and (ii) to at least one of a current source and a ground voltage. The control circuit is configured to modify states of portions of the optically tunable material in each of the disks of optically tunable material utilizing current supplied between at least two of the plurality of electrodes to adjust reflectivity of the portions of the optically tunable material to dynamically reconfigure respective antenna shape configurations of each of the electrically rotatable antennas.

4. 发明授权

US09984920B2 Design-aware pattern density control in directed self-assembly graphoepitaxy process 有权
公开(公告)号：US09984920B2
公开(公告)日：2018-05-29
申请号：US15206789
申请日：2016-07-11
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Hsueh-Chung Chen , Cheng Chi , Lin Hu , Kafai Lai , Chi-Chun Liu , Jed W. Pitera
IPC分类号： G06F17/50 , H01L21/768 , H01L23/528 , H01L23/522 , H01L21/02
CPC分类号： H01L21/76816 , G06F17/5072 , H01L21/02118 , H01L21/02318 , H01L23/5226 , H01L23/528
摘要： A method for local pattern density control of a device layout used by graphoepitaxy directed self-assembly (DSA) processes includes importing a multi-layer semiconductor device design into an assist feature system and determining overlapping regions between two or more layers in the multi-layer semiconductor device design using at least one Boolean operation. A fill for assist features is generated to provide dimensional consistency of device features by employing the overlapping regions to provide placement of the assist features. An updated device layout is stored in a memory device.

5. 发明申请

US20160357896A1 CHEMO-EPITAXY MASK GENERATION 有权
公开(公告)号：US20160357896A1
公开(公告)日：2016-12-08
申请号：US14733040
申请日：2015-06-08
申请人： International Business Machines Corporation
发明人： Joy Cheng , Gregory S. Doerk , Michael A. Guillorn , Kafai Lai , HsinYu Tsai
IPC分类号： G06F17/50
CPC分类号： H01L21/3086 , G03F7/0002
摘要： A method to generate chemo-epitaxy masks includes receiving a device pattern comprising a plurality of device geometries, wherein the device pattern conforms to chemo-epitaxy constraints, enlarging the device geometries along a width of the device geometries to provide enlarged device geometries, and using the enlarged device geometries to generate at least one chemo-epitaxy mask corresponding to the device pattern. The at least one chemo-epitaxy mask may include a neutral hard mask and one or more cut masks. The method may also include bridging device geometries that are within a selected distance along a length of the device geometries and merging device geometries that overlap. The method may also include filling break regions between the device geometries with a neutral fill pattern. A corresponding computer program product and computer system are also disclosed herein.
摘要翻译：生成化学外延掩模的方法包括接收包括多个器件几何形状的器件图案，其中器件图案符合化学外延约束，沿着器件几何形状的宽度扩大器件几何形状以提供扩大的器件几何形状，并且使用放大的器件几何形状以产生对应于器件图案的至少一个化学外延掩模。所述至少一个化学外延掩模可以包括中性硬掩模和一个或多个切割掩模。该方法还可以包括沿着装置几何形状的长度和重叠的合并装置几何形状的选定距离内的桥接装置几何形状。该方法还可以包括在具有中性填充图案的装置几何形状之间填充断裂区域。本文还公开了相应的计算机程序产品和计算机系统。

6. 发明授权

US09514263B1 Chemo epitaxy mask generation 有权
标题翻译： Chemo外延掩模生成
公开(公告)号：US09514263B1
公开(公告)日：2016-12-06
申请号：US14733040
申请日：2015-06-08
申请人： International Business Machines Corporation
发明人： Joy Cheng , Gregory S. Doerk , Michael A. Guillorn , Kafai Lai , HsinYu Tsai
IPC分类号： G06F17/50
CPC分类号： H01L21/3086 , G03F7/0002
摘要： A method to generate chemo-epitaxy masks includes receiving a device pattern comprising a plurality of device geometries, wherein the device pattern conforms to chemo-epitaxy constraints, enlarging the device geometries along a width of the device geometries to provide enlarged device geometries, and using the enlarged device geometries to generate at least one chemo-epitaxy mask corresponding to the device pattern. The at least one chemo-epitaxy mask may include a neutral hard mask and one or more cut masks. The method may also include bridging device geometries that are within a selected distance along a length of the device geometries and merging device geometries that overlap. The method may also include filling break regions between the device geometries with a neutral fill pattern. A corresponding computer program product and computer system are also disclosed herein.
摘要翻译：产生化学外延掩模的方法包括接收包括多个器件几何形状的器件图案，其中器件图案符合化学外延约束，沿着器件几何形状的宽度放大器件几何形状以提供扩大的器件几何形状，以及使用放大的器件几何形状以产生对应于器件图案的至少一个化学外延掩模。所述至少一个化学外延掩模可以包括中性硬掩模和一个或多个切割掩模。该方法还可以包括沿着装置几何形状的长度和重叠的合并装置几何形状的选定距离内的桥接装置几何形状。该方法还可以包括在具有中性填充图案的装置几何形状之间填充断裂区域。本文还公开了相应的计算机程序产品和计算机系统。

7. 发明申请

US20160350465A1 METHOD AND SYSTEM FOR TEMPLATE PATTERN OPTIMIZATION FOR DSA PATTERNING USING GRAPHOEPITAXY 有权
标题翻译：使用纹理特征的DSA图案模板优化的方法和系统
公开(公告)号：US20160350465A1
公开(公告)日：2016-12-01
申请号：US14723570
申请日：2015-05-28
申请人： International Business Machines Corporation
发明人： Michael A. Guillorn , Kafai Lai , Melih Ozlem , Hsinyu Tsai
IPC分类号： G06F17/50 , H01L27/088
CPC分类号： G06F17/5072 , G03F7/0002 , G06F17/5068 , G06F2217/12 , H01L27/0886 , Y02P90/265
摘要： A method for design template pattern optimization, comprises receiving a design for a fin field effect transistor (FinFET) device, wherein the design includes a configuration of fins, creating a design template pattern for the design for use in connection with directed self-assembly (DSA) patterning using graphoepitaxy, and optimizing the design template pattern to minimize pattern density gradients, wherein the design template pattern includes a plurality of guiding lines for guiding a block-copolymer deposited during the DSA patterning and the optimizing comprises altering the guiding lines.
摘要翻译：一种用于设计模板图案优化的方法，包括接收鳍状场效应晶体管（FinFET）器件的设计，其中所述设计包括翅片的构造，为所述设计创建用于与定向自组装结合使用的设计模板图案（ DSA），并且优化设计模板图案以最小化图案密度梯度，其中设计模板图案包括用于引导在DSA图案化期间沉积的嵌段共聚物的多条引导线，并且优化包括改变引导线。

8. 发明授权

US08656322B1 Fin design level mask decomposition for directed self assembly 有权
标题翻译：翅片设计级面罩分解用于定向自组装
公开(公告)号：US08656322B1
公开(公告)日：2014-02-18
申请号：US13744606
申请日：2013-01-18
申请人： International Business Machines Corporation
发明人： Daniel J. Dechene , Michael A. Guillorn , Kafai Lai , Jed W. Pitera , HsinYu Tsai
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G03F7/0002 , H01L21/823431
摘要： A design layout including shapes of target areas for forming semiconductor fins employing directed self-assembly can be decomposed into guiding patterns and cut patterns. The lengthwise edges of the shapes of target areas are adjusted. Widthwise edges of the adjusted shapes are extended outward to generate diffusion shapes. Guiding pattern shapes are then generated employing the diffusion shapes. Taper edges are adjusted based on process bias of a photoresist material to be subsequently employed. Optionally, a portion of a guiding pattern shape between diffusion shapes may be removed as a connection shape. The guiding pattern shapes can define at least one guiding pattern mask for lithographic pattern of guiding pattern shapes, and cut shapes can be derived from the diffusion shapes and the guiding pattern shapes. The guiding pattern shapes and the cut shapes may be adjusted to accommodate effects at device cell edges and at device macro edges.
摘要翻译：包括使用定向自组装形成半导体翅片的目标区域的形状的设计布局可以分解为引导图案和切割图案。调整目标区域的形状的纵向边。调整后的形状的纵向边缘向外延伸以产生扩散形状。然后使用扩散形状产生引导图案形状。基于待随后使用的光致抗蚀剂材料的工艺偏压来调整锥边。可选地，作为连接形状，可以去除扩散形状之间的引导图案形状的一部分。引导图案形状可以限定用于引导图案形状的平版印刷图案的至少一个引导图案掩模，并且可以从扩散形状和引导图案形状导出切割形状。可以调整引导图案形状和切割形状以适应设备单元边缘和设备宏边缘处的效果。

9. 发明授权

US10812259B2 Self-assembly based random number generator 有权
公开(公告)号：US10812259B2
公开(公告)日：2020-10-20
申请号：US15798841
申请日：2017-10-31
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Huan Hu , Kafai Lai , Sharathchandra Pankanti , Rasit Onur Topalogu
IPC分类号： H04L9/06 , H04L9/08 , G06F7/58 , H04L9/32
摘要： Methods and systems for generating a random number include extracting feature information from a structure having a random physical configuration. The feature information is converted to a string of binary values to generate a random number. Pseudo-random numbers are generated using the random number as a seed to improve the security of encrypted information.

10. 发明授权

US10606980B2 Method and recording medium of reducing chemoepitaxy directed self-assembled defects 有权
公开(公告)号：US10606980B2
公开(公告)日：2020-03-31
申请号：US16037039
申请日：2018-07-17
申请人： International Business Machines Corporation
发明人： Michael A. Guillorn , Kafai Lai , Chi-Chun Liu , Ananthan Raghunathan , Hsinyu Tsai
IPC分类号： G06F17/50 , H01L29/66
摘要： A method for reducing chemo-epitaxy directed-self assembly (DSA) defects of a layout of a guiding pattern, the method comprising: inserting a first external dummy along an external edge of the guiding pattern in a vertical direction; and inserting a second external dummy at a fixed distance from a second edge of the first external dummy, wherein the second external dummy includes a two-dimensional shape such that at least two edges of the second external dummy are parallel to the second edge of the first external dummy.

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