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1. 发明授权

US08927198B2 Method to print contact holes at high resolution 有权
标题翻译：以高分辨率打印接触孔的方法
公开(公告)号：US08927198B2
公开(公告)日：2015-01-06
申请号：US13741579
申请日：2013-01-15
申请人： International Business Machines Corporation
发明人： Martin Burkhardt , Yongan Xu
IPC分类号： G03F1/44 , G03F1/00
CPC分类号： G03F1/144 , G03F1/36
摘要： A two-dimensional dense array of contact holes can be printed on a negative photoresist employing a combination of a quadrupole illumination lens and a lithographic mask including a criss-cross pattern of opaque lines. The openings in the quadrupole illumination lens are aligned along the perpendicular directions of the opaque lines. Discrete contact holes can be printed on a negative photoresist employing a combination of a quadrupole illumination lens and a lithographic mask including a criss-cross pattern of opaque subresolution assist features and discrete opaque cross patterns. Alternately, a two-dimensional array of contact holes can be printed on a negative photoresist employing a quadrupole illumination lens and a checkerboard pattern of openings. The openings in the quadrupole illumination lens are in diagonal directions.
摘要翻译：接触孔的二维密集阵列可以使用四极照明透镜和包括不透明线的十字交叉图案的光刻掩模的组合在印刷电路板上印刷。四极照明透镜中的开口沿着不透明线的垂直方向排列。分离接触孔可以使用四极照明透镜和包括不透明分解辅助特征和离散不透明交叉图案的十字交叉图案的光刻掩模的组合来印刷在负光致抗蚀剂上。或者，二维阵列的接触孔可以使用四极照明透镜和棋盘图案的开口印刷在负光致抗蚀剂上。四极照明透镜中的开口处于对角线方向。

2. 发明公开

US20230280644A1 METHOD OF MAKING EUV MASK WITH AN ABSORBER LAYER 审中-公开
公开(公告)号：US20230280644A1
公开(公告)日：2023-09-07
申请号：US17653296
申请日：2022-03-03
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Dario Goldfarb , Martin Burkhardt , Romain Lallement , Luciana Meli
IPC分类号： G03F1/24
CPC分类号： G03F1/24
摘要： Embodiments of present invention provide a method of forming an extreme ultraviolet (EUV) mask. The method includes subliming a radiation-sensitive material onto a surface of an EUV blank substrate; exposing the radiation-sensitive material to an ionizing radiation to form an EUV mask pattern; and removing a portion of the radiation-sensitive material from the surface of the EUV blank substrate where the portion of the radiation-sensitive material is unexposed to the ionizing radiation. An EUV mask made therefrom, and the related radiation-sensitive material are also provided.

3. 发明申请

US20200151538A1 AUTOMATIC FEATURE EXTRACTION FROM AERIAL IMAGES FOR TEST PATTERN SAMPLING AND PATTERN COVERAGE INSPECTION FOR LITHOGRAPHY 审中-公开
公开(公告)号：US20200151538A1
公开(公告)日：2020-05-14
申请号：US16188803
申请日：2018-11-13
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Jing Sha , Martin Burkhardt , Sean Burns
IPC分类号： G06N3/04 , G06N3/08 , G06T7/00 , G06T7/11 , G06T7/174 , G06K9/00
摘要： According to one or more embodiments of the present invention a computer-implemented method for fabricating a chip includes generating, using an aerial image generation system, a set of aerial images for a chip layout, the set of aerial images including an aerial image corresponding to each region from the chip layout. The method further includes automatically determining, using an artificial neural network, a feature vector for each aerial image from the set of aerial images. The method further includes clustering the aerial images using their corresponding feature vectors. The method further includes selecting, as test samples, a predetermined number of aerial images from each cluster. The method further includes performing a pattern coverage inspection of the chip layout using the aerial images that are selected as test samples.

4. 发明授权

US10539881B1 Generation of hotspot-containing physical design layout patterns 有权
公开(公告)号：US10539881B1
公开(公告)日：2020-01-21
申请号：US16139986
申请日：2018-09-24
申请人： International Business Machines Corporation
发明人： Jing Sha , Dongbing Shao , Martin Burkhardt , Sean Burns
IPC分类号： G06F17/50 , G03F7/20
摘要： A method for generating physical design layout patterns includes selecting as training data a set of physical design layout patterns of patterned structures. The method also includes training, utilizing physical design layout patterns containing hotspots, a first neural network model configured to generate synthetic physical design layout patterns, and training, utilizing physical design layout patterns that do and do not contain hotspots, a second neural network model configured to classify whether physical design layout patterns contain hotspots. The method further includes generating synthetic physical design layout patterns containing hotspots by utilizing the trained first neural network model to generate synthetic physical design layout patterns and utilizing the trained second neural network model to select the synthetic physical design layout patterns containing hotspots. The method further includes evaluating manufacturability of a given patterned structure comprising at least one of the synthetic physical design layout patterns containing at least one hotspot.

5. 发明授权

US10012898B2 EUV mask for monitoring focus in EUV lithography 有权
公开(公告)号：US10012898B2
公开(公告)日：2018-07-03
申请号：US15820478
申请日：2017-11-22
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Timothy Allan Brunner , Martin Burkhardt
IPC分类号： G03F1/24 , G03F1/44 , G03F1/80 , G03F7/20
摘要： Obtaining optimal focus for exposing a photoresist in an EUV lithography with an EUV mask containing a pattern with an assist feature is disclosed. The EUV mask contains a repeating pattern, wherein the repeating pattern has two different pitches, i.e. a first pitch and a second pitch, and contains an assist feature between main features. Because the two different pitches have different focus offsets, the difference between linewidths of said gratings provides a calibration curve which is a measure of focus. The method for monitoring focus is performing a EUV exposure using a focus position with a pre-determined focus position as calibrated using the linewidth difference between the two gratings. The EUV mask for monitoring focus of present invention is applicable to both test and product masks.

6. 发明授权

US09588440B2 Method for monitoring focus in EUV lithography 有权
标题翻译：在EUV光刻中监测焦点的方法
公开(公告)号：US09588440B2
公开(公告)日：2017-03-07
申请号：US14620803
申请日：2015-02-12
申请人： International Business Machines Corporation
发明人： Timothy Allan Brunner , Martin Burkhardt
IPC分类号： G03F7/20 , G03F7/207 , G03F1/24 , G03F1/82 , G03F1/76 , G03F1/80
CPC分类号： G03F1/24 , G03F1/44 , G03F1/76 , G03F1/80 , G03F1/82 , G03F7/2002 , G03F7/2004 , G03F7/2022 , G03F7/7055 , G03F7/70641 , G03F7/70683
摘要： This invention relates to a method of obtaining optimal focus for exposing a photoresist in an EUV lithography with an EUV mask containing a pattern with an assist feature. The invention also relates to an EUV mask with a special focus test target for monitoring focus in EUV lithography, and a method of fabricating this EUV mask by designing the special focus test target. The EUV mask contains a repeating pattern, wherein the repeating pattern has two different pitches, i.e. a first pitch and a second pitch, and contains an assist feature between main features. Because the two different pitches have different focus offsets, the difference between linewidths of said gratings provides a calibration curve which is a measure of focus. The method for monitoring focus is performing an EUV exposure using a focus position with a pre-determined focus position as calibrated using the linewidth difference between the two gratings. The EUV mask for monitoring focus of present invention is applicable to both test and product masks.
摘要翻译：本发明涉及一种获得最佳焦点的方法，该方法利用包含具有辅助特征的图案的EUV掩模在EUV光刻中曝光光致抗蚀剂。本发明还涉及一种具有用于在EUV光刻中监测聚焦的特殊聚焦测试目标的EUV掩模，以及通过设计特殊聚焦测试目标来制造该EUV掩模的方法。 EUV掩模包含重复图案，其中重复图案具有两个不同的间距，即第一间距和第二间距，并且包含主要特征之间的辅助特征。由于两个不同的间距具有不同的焦点偏移，所以光栅的线宽之间的差异提供了一种校准曲线，该曲线是焦点的度量。用于监测焦点的方法是使用具有预定聚焦位置的聚焦位置来执行EUV曝光，使用两个光栅之间的线宽差进行校准。用于本发明监测焦点的EUV掩模适用于测试和产品掩模。

7. 发明申请

US20140199615A1 METHOD TO PRINT CONTACT HOLES AT HIGH RESOLUTION 有权
标题翻译：在高分辨率下打印接触孔的方法
公开(公告)号：US20140199615A1
公开(公告)日：2014-07-17
申请号：US13741579
申请日：2013-01-15
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Martin Burkhardt , Yongan Xu
IPC分类号： G03F1/00
CPC分类号： G03F1/144 , G03F1/36
摘要： A two-dimensional dense array of contact holes can be printed on a negative photoresist employing a combination of a quadrupole illumination lens and a lithographic mask including a criss-cross pattern of opaque lines. The openings in the quadrupole illumination lens are aligned along the perpendicular directions of the opaque lines. Discrete contact holes can be printed on a negative photoresist employing a combination of a quadrupole illumination lens and a lithographic mask including a criss-cross pattern of opaque subresolution assist features and discrete opaque cross patterns. Alternately, a two-dimensional array of contact holes can be printed on a negative photoresist employing a quadrupole illumination lens and a checkerboard pattern of openings. The openings in the quadrupole illumination lens are in diagonal directions.
摘要翻译：接触孔的二维密集阵列可以使用四极照明透镜和包括不透明线的十字交叉图案的光刻掩模的组合在印刷电路板上印刷。四极照明透镜中的开口沿着不透明线的垂直方向排列。分离接触孔可以使用四极照明透镜和包括不透明分解辅助特征和离散不透明交叉图案的十字交叉图案的光刻掩模的组合来印刷在负光致抗蚀剂上。或者，二维阵列的接触孔可以使用四极照明透镜和棋盘图案的开口印刷在负光致抗蚀剂上。四极照明透镜中的开口处于对角线方向。

8. 发明申请

US20130181267A1 WAFER FILL PATTERNS AND USES 审中-公开
标题翻译： WAFER FILL PATTERNS和用途
公开(公告)号：US20130181267A1
公开(公告)日：2013-07-18
申请号：US13788776
申请日：2013-03-07
申请人： International Business Machines Corporation
发明人： Martin Burkhardt , Matthew E. Colburn , Allen H. Gabor , Oleg Glushcenkov , Scott D. Halle , Howard S. Landis , Helen Wang
IPC分类号： H01L29/78
CPC分类号： H01L29/78 , H01L21/28123 , H01L21/32139 , H01L22/12 , H01L22/26
摘要： A semiconductor device includes an active region including an element formed in a double etch, double exposure method and an inactive region including one or more fills, at least one of the one or more fills including a cut-away hole formed therein, where the cut-away holes expose a layer in the inactive region used for an endpoint detection.
摘要翻译：半导体器件包括有源区，包括以双蚀刻形成的元件，双曝光方法和包括一个或多个填充物的非活性区域，所述一个或多个填充物中的至少一个填充物包括形成在其中的切除孔，未使用的孔暴露用于端点检测的非活动区域中的层。

9. 发明授权

US09921466B2 Method for monitoring focus in EUV lithography 有权
公开(公告)号：US09921466B2
公开(公告)日：2018-03-20
申请号：US15414889
申请日：2017-01-25
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Timothy Allan Brunner , Martin Burkhardt
IPC分类号： G03F1/24 , G03F1/44 , G03F7/20 , G03F1/80
CPC分类号： G03F1/24 , G03F1/44 , G03F1/76 , G03F1/80 , G03F1/82 , G03F7/2002 , G03F7/2004 , G03F7/2022 , G03F7/7055 , G03F7/70641 , G03F7/70683
摘要： Obtaining optimal focus for exposing a photoresist in an EUV lithography with an EUV mask containing a pattern with an assist feature is disclosed. The EUV mask contains a repeating pattern, wherein the repeating pattern has two different pitches, i.e. a first pitch and a second pitch, and contains an assist feature between main features. Because the two different pitches have different focus offsets, the difference between linewidths of said gratings provides a calibration curve which is a measure of focus. The method for monitoring focus is performing a EUV exposure using a focus position with a pre-determined focus position as calibrated using the linewidth difference between the two gratings. The EUV mask for monitoring focus of present invention is applicable to both test and product masks.

10. 发明授权

US09551924B2 Structure and method for fixing phase effects on EUV mask 有权
标题翻译：将相位效应固定在EUV掩模上的结构和方法
公开(公告)号：US09551924B2
公开(公告)日：2017-01-24
申请号：US14620843
申请日：2015-02-12
申请人： International Business Machines Corporation
发明人： Martin Burkhardt , Emily Elizabeth Fisch Gallagher
IPC分类号： G03F1/24 , G03F1/22 , G03F1/26 , G03F1/80
CPC分类号： G03F1/24 , G03F1/26 , G03F1/80
摘要： This invention relates to a structure for fixing phase effects on EUV mask which contains a repeating pattern with an assist feature, or a pattern with two different sized features in close proximity. The EUV mask with the repeating pattern is capable of printing a group of trenches on a photoresist layer. The invention also relates to a method of fabricating an EUV mask for fixing phase effects. The EUV mask contains an absorber layer over the multilayer reflector, and the absorber layer is patterned to form a mask pattern which contains absorptive regions and reflective regions. The absorber is in the absorptive regions, and a phase shifter is deposited at least in the whole reflective regions of the mask pattern to a thickness capable of correcting phase effects. The phase shifter has an index of refraction value is about equal to or less than that of the absorber. The thickness of the phase shifter is determined by simulation.
摘要翻译：本发明涉及一种用于将相位效应固定在EUV掩模上的结构，该EUV掩模包含具有辅助特征的重复图案，或者具有紧密接近的两个不同尺寸特征的图案。具有重复图案的EUV掩模能够在光致抗蚀剂层上印刷一组沟槽。本发明还涉及制造用于固定相位效应的EUV掩模的方法。 EUV掩模在多层反射器上包含吸收层，并且将吸收层图案化以形成包含吸收区域和反射区域的掩模图案。吸收体在吸收区域中，并且至少在掩模图案的整个反射区域中沉积移相器至能校正相位效应的厚度。移相器的折射率值大约等于或小于吸收体的折射率值。通过模拟确定移相器的厚度。

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