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1. 发明申请

US20140262039A1 METHOD OF FORMING ASYMMETRIC SPACERS AND METHODS OF FABRICATING SEMICONDUCTOR DEVICE USING ASYMMETRIC SPACERS 审中-公开
标题翻译：形成不对称间隔的方法和使用不对称间隔制作半导体器件的方法
公开(公告)号：US20140262039A1
公开(公告)日：2014-09-18
申请号：US14294557
申请日：2014-06-03
申请人： International Business Machines Corporation
发明人： Kangguo Cheng , Xi Li , Richard S. Wise
IPC分类号： H01L21/67
CPC分类号： H01L21/67069 , H01J37/32733 , H01J2237/20207 , H01L21/3086 , H01L21/31116 , H01L29/165 , H01L29/6653 , H01L29/66636 , H01L29/66659 , H01L29/66772 , H01L29/7835 , H01L29/7848 , H01L29/78654
摘要： A method of fabricating asymmetrical spacers, structures fabricated using asymmetrical spacers and an apparatus for fabricating asymmetrical spacers. The method includes: forming on a substrate, a structure having a top surface and opposite first and second sidewalls and having a longitudinal axis parallel to the sidewalls; forming a conformal layer on the top surface of the substrate, the top surface of the structure and the sidewalls of the structure; tilting the substrate about a longitudinal axis relative to a flux of reactive ions, the flux of reactive ions striking the conformal layer at acute angle; and exposing the conformal layer to the flux of reactive ions until the conformal layer is removed from the top surface of the structure and the top surface of the substrate leaving a first spacer on the first sidewall and a second spacer on the second sidewall, the first spacer thinner than the second spacer.
摘要翻译：制造不对称间隔物的方法，使用不对称间隔物制造的结构和用于制造不对称间隔物的装置。该方法包括：在基底上形成具有顶表面和相对的第一和第二侧壁并具有平行于侧壁的纵向轴线的结构; 在所述基底的顶表面，所述结构的顶表面和所述结构的侧壁上形成共形层; 相对于反应离子通量使基板围绕纵向轴线倾斜，反应离子的流量以锐角撞击共形层; 以及将所述保形层暴露于所述反应性离子的通量，直到所述保形层从所述结构的顶表面去除并且所述衬底的顶表面在所述第一侧壁上离开第一间隔物，并在所述第二侧壁上留下第二间隔物，所述第一间隔物比第二间隔物薄。

2. 发明授权

US09013008B2 Semiconductor structures and methods of manufacturing the same 有权
标题翻译：半导体结构及其制造方法
公开(公告)号：US09013008B2
公开(公告)日：2015-04-21
申请号：US14052066
申请日：2013-10-11
申请人： International Business Machines Corporation
发明人： Xi Li , Viorel C. Ontalus
IPC分类号： H01L29/78 , H01L29/165 , H01L21/302 , H01L29/16 , H01L29/161
CPC分类号： H01L29/165 , H01L21/302 , H01L29/1608 , H01L29/161 , H01L29/78 , H01L29/7827
摘要： A semiconductor structure has embedded stressor material for enhanced transistor performance. The method of forming the semiconductor structure includes etching an undercut in a substrate material under one or more gate structures while protecting an implant with a liner material. The method further includes removing the liner material on a side of the implant and depositing stressor material in the undercut under the one or more gate structures.
摘要翻译：半导体结构具有用于增强晶体管性能的嵌入式应力源材料。形成半导体结构的方法包括在一个或多个栅极结构下蚀刻衬底材料中的底切，同时用衬垫材料保护植入物。该方法还包括移除在植入物侧面上的衬垫材料并且在一个或多个栅极结构下的底切中沉积应力源材料。

3. 发明授权

US09495651B2 Cohort manipulation and optimization 有权
标题翻译：队列操纵和优化
公开(公告)号：US09495651B2
公开(公告)日：2016-11-15
申请号：US13736911
申请日：2013-01-08
申请人： International Business Machines Corporation
发明人： Patrick J. O'Sullivan , James C. Thorburn , Xi Li , Jesus Alberto Omana Iglesias
IPC分类号： G06F21/00 , G06Q10/06 , G06Q30/06
CPC分类号： G06Q10/06312 , G06Q10/06313 , G06Q10/0637 , G06Q30/06
摘要： An approach is provided to visually depict cohort data to a user. The approach includes receiving a cohort display request (e.g., from a user, etc.). In response to the request, the approach retrieves a plurality of cohort data records, with each of the cohort data records corresponding to a cohort selected from a group of cohorts. In this approach, the group of cohorts represent similar computer systems. The approach displays a set of graphic user interface (GUI) controls on a display device, with each of the GUI controls corresponds to one of the retrieved cohort data records. A user selection is received that corresponds to a selected one of the GUI controls. The system responds by executing a cohort action on the cohort corresponding to the selected GUI control.
摘要翻译：提供了一种方法来将用户的队列数据直观地描绘出来。该方法包括接收队列显示请求（例如，从用户等）。响应于该请求，该方法检索多个队列数据记录，其中每个队列数据记录对应于从一组队列中选择的队列。在这种方法中，群组代表类似的计算机系统。该方法在显示设备上显示一组图形用户界面（GUI）控件，每个GUI控件对应于所检索的队列数据记录之一。接收对应于所选择的一个GUI控件的用户选择。系统通过对与所选择的GUI控件相对应的队列执行队列动作来进行响应。

4. 发明申请

US20130193563A1 TRENCH CAPACITOR WITH SPACER-LESS FABRICATION PROCESS 审中-公开
公开(公告)号：US20130193563A1
公开(公告)日：2013-08-01
申请号：US13800488
申请日：2013-03-13
申请人： International Business Machines Corporation
发明人： Chengwen Pei , Xi Li , Geng Wang
IPC分类号： H01L29/06
CPC分类号： H01L29/0692 , H01L21/3081 , H01L21/3086 , H01L21/84 , H01L27/1087 , H01L27/1203 , H01L29/66181 , H01L29/945
摘要： A trench capacitor and method of fabrication are disclosed. The SOI region is doped such that a selective isotropic etch used for trench widening does not cause appreciable pullback of the SOI region, and no spacers are needed in the upper portion of the trench.

5. 发明授权

US09053956B2 Trench capacitor with spacer-less fabrication process 有权
标题翻译：沟槽电容器，无间隔制造工艺
公开(公告)号：US09053956B2
公开(公告)日：2015-06-09
申请号：US13800488
申请日：2013-03-13
申请人： International Business Machines Corporation
发明人： Chengwen Pei , Xi Li , Geng Wang
IPC分类号： H01L27/108 , H01L29/76 , H01L29/06 , H01L21/308 , H01L29/66 , H01L29/94 , H01L21/84 , H01L27/12
CPC分类号： H01L29/0692 , H01L21/3081 , H01L21/3086 , H01L21/84 , H01L27/1087 , H01L27/1203 , H01L29/66181 , H01L29/945
摘要： A trench capacitor and method of fabrication are disclosed. The SOI region is doped such that a selective isotropic etch used for trench widening does not cause appreciable pullback of the SOI region, and no spacers are needed in the upper portion of the trench.
摘要翻译：公开了一种沟槽电容器和制造方法。掺杂SOI区域使得用于沟槽加宽的选择性各向同性蚀刻不会导致SOI区域的明显的回退，并且在沟槽的上部不需要间隔物。

6. 发明授权

US09659267B2 Cohort cost analysis and workload migration 有权
公开(公告)号：US09659267B2
公开(公告)日：2017-05-23
申请号：US13736920
申请日：2013-01-08
申请人： International Business Machines Corporation
发明人： Xi Li , Jesus Alberto Omana Iglesias , Patrick J. O'Sullivan , James C. Thorburn
IPC分类号： G06F21/00 , G06Q10/06 , G06Q30/06
CPC分类号： G06Q10/06312 , G06Q10/06313 , G06Q10/0637 , G06Q30/06
摘要： An approach is provided to analyze data center performance. The approach includes analyzing the data centers, with each of the data centers are represented by a plurality of data center records. Available capacity at each of the data centers is identified based on the selected data center's set of data center records. In addition, a current workload currently being performed by each of the data centers is identified. The approach compares the identified current workload of each data center with the identified available capacity at the other data centers. Data centers are added to a consolidation consideration list in response to the comparisons. The consolidation consideration list is further analyzed to select data centers for consolidation or elimination.

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