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1. 发明授权

US09947688B2 Integrated circuits with components on both sides of a selected substrate and methods of fabrication 有权
公开(公告)号：US09947688B2
公开(公告)日：2018-04-17
申请号：US13528832
申请日：2012-06-20
申请人： James S. Cable , Anthony Mark Miscione , Ronald Eugene Reedy
发明人： James S. Cable , Anthony Mark Miscione , Ronald Eugene Reedy
IPC分类号： H01L21/00 , H01L21/36 , H01L21/20 , H01L27/12 , H01L27/06 , H01L21/78
CPC分类号： H01L27/1203 , H01L21/78 , H01L27/0694 , H01L2224/0401 , H01L2224/04042 , H01L2224/11002 , H01L2224/16227 , H01L2224/48227 , H01L2224/73257 , H01L2224/94 , H01L2924/15192 , H01L2224/11
摘要： Novel integrated circuits (SOI ICs), and methods for making and mounting the ICs are disclosed. In one embodiment, an IC comprises a first circuit layer of the IC formed from an active layer of an SOI wafer. The first circuit layer is coupled to a first surface of buffer layer, and a second surface of the buffer layer is coupled to a selected substrate comprising an insulating material. The selected substrate may be selected, without limitation, from the following types: sapphire, quartz, silicon dioxide glass, piezoelectric materials, and ceramics. A second circuit layer of the IC are formed, coupled to a second surface of the selected substrate. In one embodiment of a mounted IC, the first circuit layer is coupled to contact pads on a package substrate via solder bumps or copper pillars. The second circuit layer is coupled to contact pads on the package substrate via wire bonds.

2. 发明申请

US20130154088A1 Integrated Circuits with Components on Both Sides of a Selected Substrate and Methods of Fabrication 有权
标题翻译：集成电路与选定基板的两面上的组件和制造方法
公开(公告)号：US20130154088A1
公开(公告)日：2013-06-20
申请号：US13528832
申请日：2012-06-20
申请人： James S. Cable , Anthony Mark Miscione , Ronald Eugene Reedy
发明人： James S. Cable , Anthony Mark Miscione , Ronald Eugene Reedy
IPC分类号： H01L27/12 , H01L21/78
CPC分类号： H01L27/1203 , H01L21/78 , H01L27/0694 , H01L2224/0401 , H01L2224/04042 , H01L2224/11002 , H01L2224/16227 , H01L2224/48227 , H01L2224/73257 , H01L2224/94 , H01L2924/15192 , H01L2224/11
摘要： Novel integrated circuits (SOI ICs), and methods for making and mounting the ICs are disclosed. In one embodiment, an IC comprises a first circuit layer of the IC formed from an active layer of an SOI wafer. The first circuit layer is coupled to a first surface of buffer layer, and a second surface of the buffer layer is coupled to a selected substrate comprising an insulating material. The selected substrate may be selected, without limitation, from the following types: sapphire, quartz, silicon dioxide glass, piezoelectric materials, and ceramics. A second circuit layer of the IC are formed, coupled to a second surface of the selected substrate. In one embodiment of a mounted IC, the first circuit layer is coupled to contact pads on a package substrate via solder bumps or copper pillars. The second circuit layer is coupled to contact pads on the package substrate via wire bonds.
摘要翻译：公开了新型集成电路（SOI IC）以及制造和安装IC的方法。在一个实施例中，IC包括由SOI晶片的有源层形成的IC的第一电路层。第一电路层耦合到缓冲层的第一表面，并且缓冲层的第二表面耦合到包括绝缘材料的选定衬底。所选择的基板可以选自但不限于以下类型：蓝宝石，石英，二氧化硅玻璃，压电材料和陶瓷。形成IC的第二电路层，耦合到所选择的衬底的第二表面。在安装的IC的一个实施例中，第一电路层通过焊料凸块或铜柱与封装衬底上的接触焊盘耦合。第二电路层通过引线接合耦合到封装衬底上的接触焊盘。

3. 发明申请

US20120313731A1 Method, System, and Apparatus for Resonator Circuits and Modulating Resonators 有权
标题翻译：用于谐振器电路和调制谐振器的方法，系统和装置
公开(公告)号：US20120313731A1
公开(公告)日：2012-12-13
申请号：US13316243
申请日：2011-12-09
申请人： Mark L. Burgener , James S. Cable
发明人： Mark L. Burgener , James S. Cable
IPC分类号： H03H9/58
CPC分类号： H03H9/54 , H03H7/40 , H03H7/48 , H03H9/542 , H03H9/547 , H03H9/64 , H03H9/6403 , H03H9/6409 , H03H9/6483 , H03H9/6489 , H03H9/706 , H03H9/725 , H03H2009/02204 , H03H2210/015 , H03H2210/025 , H03H2210/036 , H03H2210/04 , H03H2240/00 , H03H2250/00 , H03J2200/10
摘要： Embodiments of resonator circuits and modulating resonators and are described generally herein. One or more acoustic wave resonators may be coupled in series or parallel to generate tunable filters. One or more acoustic wave resonances may be modulated by one or more capacitors or tunable capacitors. One or more acoustic wave modules may also be switchable in a filter. Other embodiments may be described and claimed.
摘要翻译：谐振器电路和调制谐振器的实施例并在本文中一般地描述。一个或多个声波谐振器可以串联或并联耦合以产生可调谐滤波器。一个或多个声波谐振可以由一个或多个电容器或可调谐电容器调制。一个或多个声波模块也可以在滤波器中切换。可以描述和要求保护其他实施例。

4. 发明授权

US07860499B2 Switch circuit and method of switching radio frequency signals 有权
标题翻译：开关电路及射频信号切换方法
公开(公告)号：US07860499B2
公开(公告)日：2010-12-28
申请号：US12315395
申请日：2008-12-01
申请人： Mark L. Burgener , James S. Cable
发明人： Mark L. Burgener , James S. Cable
IPC分类号： H04B1/28 , H01L29/76 , H04M1/00
CPC分类号： H03K17/6871 , H01P1/15 , H03K17/063 , H03K17/102 , H03K17/693 , H03K19/018521 , H03K19/0944 , H03K2017/0803 , H04B1/40
摘要： An RF switch circuit and method for switching RF signals that may be fabricated using common integrated circuit materials such as silicon, particularly using insulating substrate technologies. The RF switch includes switching and shunting transistor groupings to alternatively couple RF input signals to a common RF node, each controlled by a switching control voltage (SW) or its inverse (SW), which are approximately symmetrical about ground. The transistor groupings each comprise one or more insulating gate FET transistors connected together in a “stacked” series channel configuration, which increases the breakdown voltage across the series connected transistors and improves RF switch compression. A fully integrated RF switch is described including control logic and a negative voltage generator with the RF switch elements. In one embodiment, the fully integrated RF switch includes an oscillator, a charge pump, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit.
摘要翻译：一种用于切换RF信号的RF开关电路和方法，其可以使用诸如硅的公共集成电路材料制造，特别是使用绝缘衬底技术。 RF开关包括切换和分流晶体管组，以将RF输入信号交替地耦合到公共RF节点，每个RF节点由开关控制电压（SW）或其逆（SW）控制，其大约对称地对称。晶体管组各自包括以“堆叠”串联通道配置连接在一起的一个或多个绝缘栅FET晶体管，这增加了串联连接的晶体管两端的击穿电压并改善了RF开关压缩。描述了完全集成的RF开关，其包括具有RF开关元件的控制逻辑和负电压发生器。在一个实施例中，完全集成的RF开关包括振荡器，电荷泵，CMOS逻辑电路，电平移位和分压电路以及RF缓冲电路。

5. 发明授权

US07123898B2 Switch circuit and method of switching radio frequency signals 有权
标题翻译：开关电路及射频信号切换方法
公开(公告)号：US07123898B2
公开(公告)日：2006-10-17
申请号：US10922135
申请日：2004-08-18
申请人： Mark L. Burgener , James S. Cable
发明人： Mark L. Burgener , James S. Cable
IPC分类号： H04B1/28 , H01L29/76 , H04Q7/20 , H04M1/00
CPC分类号： H03K17/6871 , H01P1/15 , H03K17/063 , H03K17/102 , H03K17/693 , H03K19/018521 , H03K19/0944 , H03K2017/0803 , H04B1/40
摘要： A novel RF buffer circuit adapted for use with an RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF node. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW_). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a “stacked” or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level shifting, voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.
摘要翻译：描述了适用于RF开关电路的新型RF缓冲电路和用于切换RF信号的方法。 RF开关电路采用绝缘体上硅（SOI）技术制造。 RF开关包括用于交替地将RF输入信号耦合到公共RF节点的成对的开关和分流晶体管组。开关和分流晶体管分组对由开关控制电压（SW）及其反相（SW_）控制。开关和分流晶体管组包括以“堆叠”或串联配置连接在一起的一个或多个MOSFET晶体管。晶体管分组器件和相关的栅极电阻器的堆叠增加了串联连接的开关晶体管上的击穿电压，并且操作以改善RF开关压缩。描述了完全集成的RF开关，其包括与RF开关元件集成在一起的数字控制逻辑和负电压发生器。在一个实施例中，完全集成的RF开关包括内置振荡器，电荷泵电路，CMOS逻辑电路，电平转换和分压器电路以及RF缓冲电路。描述了电荷泵，电平转换，分压器和RF缓冲电路的几个实施例。本发明的RF开关提供插入损耗，开关隔离和开关压缩方面的改进。

6. 发明授权

US06869229B2 Coupled optical and optoelectronic devices, and method of making the same 有权
标题翻译：耦合光电子器件及其制造方法
公开(公告)号：US06869229B2
公开(公告)日：2005-03-22
申请号：US10099523
申请日：2002-03-15
申请人： Ronald E. Reedy , James S. Cable , Charles B. Kuznia , Donald J. Albares , Tri Q. Le
发明人： Ronald E. Reedy , James S. Cable , Charles B. Kuznia , Donald J. Albares , Tri Q. Le
IPC分类号： G02B6/42 , G02B6/12 , G02B6/30
CPC分类号： G02B6/4231 , G02B6/4204 , G02B6/4212 , G02B6/4214 , G02B6/4239 , G02B6/4243 , G02B6/4246 , G02B6/4249 , G02B6/4259 , G02B6/426 , G02B6/4261 , G02B6/4267 , G02B6/4274 , H01L2224/16
摘要： An optical-optoelectronic coupling structure comprising a flip-chip optoelectronic/ultrathin silicon-on-sapphire device mounted on a V-groove, optical-fiber-bearing carrier substrate, including light-reflective structures for launching light into the optical fiber core or transmitting light emitted by the optical fiber core to the optoelectronic device. The optical fiber may be immobilized in the V-groove using a curable resin adhesive characterized by a refractive index substantially similar to the refractive index of the optical fiber.
摘要翻译：一种光学 - 光电耦合结构，其包括安装在V形槽，光纤承载载体衬底上的倒装芯片光电/超薄蓝宝石蓝宝石器件，包括用于将光发射到光纤芯中或发射光纤的光反射结构由光纤芯发射的光到光电器件。光纤可以使用基本上类似于光纤的折射率的折射率的固化树脂粘合剂固定在V形槽中。

7. 发明授权

US06690056B1 EEPROM cell on SOI 有权
标题翻译： SOI上的EEPROM单元
公开(公告)号：US06690056B1
公开(公告)日：2004-02-10
申请号：US09420952
申请日：1999-10-19
申请人： Ronald E. Reedy , James S. Cable
发明人： Ronald E. Reedy , James S. Cable
IPC分类号： H01L2976
CPC分类号： H01L27/11807 , H01L27/115 , H01L27/1203
摘要： A non-volatile storage cell manufactured in a standard CMOS process in silicon on insulator is described. The cell is manufactured in a standard single polysilicon layer CMOS process applied to silicon on insulator starting substrates. Two versions of the cell are described with distinct mechanisms for writing onto a floating polysilicon layer storage node. The basic cell comprises crossed N- and P- transistors which share a common channel region and a common floating gate over the channel. Current in the channel results in charge injection through the gate oxide and onto the polysilicon gate conductor where it is permanently stored. Since both N and P type transistors are available, charge of both polarities can be injected. Application of a voltage to either of the transistors results in a current or voltage which is used to perform the reading function. Multiple variations of the cell and its operation are also described along with unique applications of the cell.
摘要翻译：描述了在绝缘体硅中以标准CMOS工艺制造的非易失性存储单元。该电池以应用于绝缘体上硅衬底的标准单多晶硅层CMOS工艺制造。描述了具有用于写入浮置多晶硅层存储节点的不同机制的单元的两个版本。基本单元包括在通道上共享公共通道区域和公共浮动栅极的交叉的N和P-晶体管。通道中的电流导致通过栅极氧化物和多晶硅栅极导体的电荷注入，其中其被永久存储。由于N型和P型晶体管都是可用的，因此可以注入两种极性的电荷。将电压施加到晶体管中的任一个导致用于执行读取功能的电流或电压。细胞的多种变化及其操作也随着细胞的独特应用而被描述。

8. 发明授权

US08649754B2 Integrated RF front end with stacked transistor switch 有权
标题翻译：集成RF前端，堆叠晶体管开关
公开(公告)号：US08649754B2
公开(公告)日：2014-02-11
申请号：US12903848
申请日：2010-10-13
申请人： Mark L. Burgener , James S. Cable
发明人： Mark L. Burgener , James S. Cable
IPC分类号： H04B1/28
CPC分类号： H04B1/48 , H01L27/0248 , H01Q23/00 , H03F1/0205 , H03F1/56 , H03F1/565 , H03F3/19 , H03F3/21 , H03F2200/387 , H03F2200/451 , H03G3/3042 , H03G11/00 , H04B1/0053 , H04B1/0475 , H04L27/04
摘要： A monolithic integrated circuit (IC), and method of manufacturing same, that includes all RF front end or transceiver elements for a portable communication device, including a power amplifier (PA), a matching, coupling and filtering network, and an antenna switch to couple the conditioned PA signal to an antenna. An output signal sensor senses at least a voltage amplitude of the signal switched by the antenna switch, and signals a PA control circuit to limit PA output power in response to excessive values of sensed output. Stacks of multiple FETs in series to operate as a switching device may be used for implementation of the RF front end, and the method and apparatus of such stacks are claimed as subcombinations. An iClass PA architecture is described that dissipatively terminates unwanted harmonics of the PA output signal. A preferred embodiment of the RF transceiver IC includes two distinct PA circuits, two distinct receive signal amplifier circuits, and a four-way antenna switch to selectably couple a single antenna connection to any one of the four circuits.
摘要翻译：一种单片集成电路（IC）及其制造方法，其包括用于便携式通信设备的所有RF前端或收发器元件，包括功率放大器（PA），匹配，耦合和滤波网络以及天线开关将调节的PA信号耦合到天线。输出信号传感器至少感测由天线开关切换的信号的电压幅度，并且响应于感测输出的过大值，向PA控制电路发信号以限制PA输出功率。用作串联用作开关装置的多个FET的堆叠可以用于RF前端的实现，并且这种堆叠的方法和装置被称为子组合。描述了一种消耗性地终止PA输出信号的不需要的谐波的iClass PA架构。 RF收发器IC的优选实施例包括两个不同的PA电路，两个不同的接收信号放大器电路和四路天线开关，以将单个天线连接可选择地耦合到四个电路中的任一个。

9. 发明授权

US08583111B2 Switch circuit and method of switching radio frequency signals 有权
公开(公告)号：US08583111B2
公开(公告)日：2013-11-12
申请号：US12980161
申请日：2010-12-28
申请人： Mark L. Burgener , James S. Cable
发明人： Mark L. Burgener , James S. Cable
IPC分类号： H04B1/28 , H01L29/76 , H04M1/00
CPC分类号： H03K17/6871 , H01P1/15 , H03K17/063 , H03K17/102 , H03K17/693 , H03K19/018521 , H03K19/0944 , H03K2017/0803 , H04B1/40
摘要： An RF switch circuit and method for switching RF signals that may be fabricated using common integrated circuit materials such as silicon, particularly using insulating substrate technologies. The RF switch includes switching and shunting transistor groupings to alternatively couple RF input signals to a common RF node, each controlled by a switching control voltage (SW) or its inverse (SW_), which are approximately symmetrical about ground. The transistor groupings each comprise one or more insulating gate FET transistors connected together in a “stacked” series channel configuration, which increases the breakdown voltage across the series connected transistors and improves RF switch compression. A fully integrated RF switch is described including control logic and a negative voltage generator with the RF switch elements. In one embodiment, the fully integrated RF switch includes an oscillator, a charge pump, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit.

10. 发明申请

US20090117871A1 Switch circuit and method of switching radio frequency signals 有权
标题翻译：开关电路及射频信号切换方法
公开(公告)号：US20090117871A1
公开(公告)日：2009-05-07
申请号：US12315395
申请日：2008-12-01
申请人： Mark L. Burgener , James S. Cable
发明人： Mark L. Burgener , James S. Cable
IPC分类号： H04B1/28
CPC分类号： H03K17/6871 , H01P1/15 , H03K17/063 , H03K17/102 , H03K17/693 , H03K19/018521 , H03K19/0944 , H03K2017/0803 , H04B1/40
摘要： An RF switch circuit and method for switching RF signals that may be fabricated using common integrated circuit materials such as silicon, particularly using insulating substrate technologies. The RF switch includes switching and shunting transistor groupings to alternatively couple RF input signals to a common RF node, each controlled by a switching control voltage (SW) or its inverse (SW_), which are approximately symmetrical about ground. The transistor groupings each comprise one or more insulating gate FET transistors connected together in a “stacked” series channel configuration, which increases the breakdown voltage across the series connected transistors and improves RF switch compression. A fully integrated RF switch is described including control logic and a negative voltage generator with the RF switch elements. In one embodiment, the fully integrated RF switch includes an oscillator, a charge pump, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit.
摘要翻译：一种用于切换RF信号的RF开关电路和方法，其可以使用诸如硅的公共集成电路材料制造，特别是使用绝缘衬底技术。 RF开关包括切换和分流晶体管组，以将RF输入信号交替耦合到公共RF节点，每个RF节点由开关控制电压（SW）或其倒数（SW_）控制，开关控制电压（SW）近似对称关于地对称。晶体管组各自包括以“堆叠”串联通道配置连接在一起的一个或多个绝缘栅FET晶体管，这增加了串联连接的晶体管两端的击穿电压并改善了RF开关压缩。描述了完全集成的RF开关，其包括具有RF开关元件的控制逻辑和负电压发生器。在一个实施例中，完全集成的RF开关包括振荡器，电荷泵，CMOS逻辑电路，电平移位和分压电路以及RF缓冲电路。

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