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1. 发明授权

US07663393B2 Mobility measurements of inversion charge carriers 有权
标题翻译：反向电荷载流子迁移率测量
公开(公告)号：US07663393B2
公开(公告)日：2010-02-16
申请号：US12128510
申请日：2008-05-28
申请人： Jean-Luc Everaert , Erik Rosseel
发明人： Jean-Luc Everaert , Erik Rosseel
IPC分类号： G01R31/26 , G01R31/302
CPC分类号： G01R31/2648 , G01R31/2656
摘要： A method and device for determining the quality of the interface surface between a layer of a dielectric material and the top surface of the semiconductor substrate are disclosed. In one aspect, the method comprises providing a semiconductor substrate with a top surface whereon a layer of a dielectric material is deposited thereby forming an interface surface, the surface of the layer of the dielectric material being or not in direct contact with the semiconductor substrate defining a top surface. A charge is then applied on a dedicated area of the top surface. A voltage Vs is measured on the top surface. The dedicated area is illuminated to define an illuminated spot. The photovoltage is measured inside and outside the determined illuminated spot during the illumination of the area.
摘要翻译：公开了一种用于确定介电材料层与半导体衬底的顶表面之间的界面表面质量的方法和装置。在一个方面，所述方法包括提供具有顶表面的半导体衬底，在所述顶表面上沉积介电材料层，从而形成界面表面，所述电介质材料层的表面与所述半导体衬底直接接触，所述半导体衬底限定顶面。然后将电荷施加在顶表面的专用区域上。在顶表面上测量电压Vs。专用区域被点亮以定义一个照明点。在该区域的照明期间，在确定的照明光斑的内部和外部测量光电压。

2. 发明申请

US20080297189A1 MOBILITY MEASUREMENTS OF INVERSION CHARGE CARRIERS 有权
标题翻译：反向充电载波的移动性测量
公开(公告)号：US20080297189A1
公开(公告)日：2008-12-04
申请号：US12128510
申请日：2008-05-28
申请人： Jean-Luc Everaert , Erik Rosseel
发明人： Jean-Luc Everaert , Erik Rosseel
IPC分类号： G01R31/26
CPC分类号： G01R31/2648 , G01R31/2656
摘要： A method and device for determining the quality of the interface surface between a layer of a dielectric material and the top surface of the semiconductor substrate are disclosed. In one aspect, the method comprises providing a semiconductor substrate with a top surface whereon a layer of a dielectric material is deposited thereby forming an interface surface, the surface of the layer of the dielectric material being or not in direct contact with the semiconductor substrate defining a top surface. A charge is then applied on a dedicated area of the top surface. A voltage Vs is measured on the top surface. The dedicated area is illuminated to define an illuminated spot. The photovoltage is measured inside and outside the determined illuminated spot during the illumination of the area.
摘要翻译：公开了一种用于确定介电材料层与半导体衬底的顶表面之间的界面表面质量的方法和装置。在一个方面，所述方法包括提供具有顶表面的半导体衬底，在所述顶表面上沉积介电材料层，从而形成界面表面，所述电介质材料层的表面与所述半导体衬底直接接触，所述半导体衬底限定顶面。然后将电荷施加在顶表面的专用区域上。在顶表面上测量电压Vs。专用区域被点亮以定义一个照明点。在该区域的照明期间，在确定的照明光斑的内部和外部测量光电压。

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