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1. 发明授权

US08010876B2 Method of facilitating reliable access of flash memory 有权
标题翻译：方便闪存的可靠访问
公开(公告)号：US08010876B2
公开(公告)日：2011-08-30
申请号：US11965076
申请日：2007-12-27
申请人： Jen-wei Hsieh , Tei-wei Kuo , Hsiang-chi Hsieh
发明人： Jen-wei Hsieh , Tei-wei Kuo , Hsiang-chi Hsieh
IPC分类号： G11C29/00
CPC分类号： G06F11/1068 , G11C7/1006 , G11C2029/0411
摘要： A method of facilitating reliably accessing flash memory is provided. During the write-in process, the present invention utilizes the steps of coding write-in data to generate extra data, and then generating the first error correction code by performing an error-correcting operation on the write-in data and the extra data. Finally, store the N write-in data and the generated K extra data into the data area and the first ECC into the spare area. During read process, the present invention utilizes the steps of reading data from the data area of the target flash-memory page to generate the second ECC, counting with the counter a number of bit differences between the first ECC and the second ECC, and selecting M data from the N write-in data and the K extra data as decoding factors to retrieve the N write-in data. The higher the counter values, the lower the likelihood the corresponding bit is selected to be retrieved.
摘要翻译：提供了一种便于可靠访问闪速存储器的方法。在写入过程中，本发明利用对写入数据进行编码以产生额外数据的步骤，然后通过对写入数据和附加数据执行纠错操作来产生第一纠错码。最后，将N个写入数据和生成的K个额外数据存储到数据区和第一个ECC进入备用区。在读取过程中，本发明利用从目标闪存存储器页面的数据区域读取数据以产生第二ECC的步骤，用计数器对第一ECC和第二ECC之间的位差进行计数，并且选择来自N个写入数据的M个数据和K个额外数据作为解码因子来检索N个写入数据。计数器值越高，选择相应位被检索的可能性越低。

2. 发明申请

US20080163031A1 METHOD OF FACILITATING RELIABLY ACCESSING FLASH MEMORY 有权
标题翻译：促进可靠访问闪存的方法
公开(公告)号：US20080163031A1
公开(公告)日：2008-07-03
申请号：US11965076
申请日：2007-12-27
申请人： Jen-wei Hsieh , Tei-wei Kuo , Hsiang-chi Hsieh
发明人： Jen-wei Hsieh , Tei-wei Kuo , Hsiang-chi Hsieh
IPC分类号： G11C29/00 , G06F11/07
CPC分类号： G06F11/1068 , G11C7/1006 , G11C2029/0411
摘要： A method of facilitating reliably accessing flash memory is provided. During the write-in process, the present invention utilizes the steps of coding write-in data to generate extra data, and then generating the first error correction code by performing an error-correcting operation on the write-in data and the extra data. Finally, store the N write-in data and the generated K extra data into the data area and the first ECC into the spare area. During read process, the present invention utilizes the steps of reading data from the data area of the target flash-memory page to generate the second ECC, counting with the counter a number of bit differences between the first ECC and the second ECC, and selecting M data from the N write-in data and the K extra data as decoding factors to retrieve the N write-in data. The higher the counter values, the lower the likelihood the corresponding bit is selected to be retrieved.
摘要翻译：提供了一种便于可靠访问闪速存储器的方法。在写入过程中，本发明利用对写入数据进行编码以产生额外数据的步骤，然后通过对写入数据和附加数据执行纠错操作来产生第一纠错码。最后，将N个写入数据和生成的K个额外数据存储到数据区和第一个ECC进入备用区。在读取过程中，本发明利用从目标闪存存储器页面的数据区域读取数据以产生第二ECC的步骤，用计数器对第一ECC和第二ECC之间的位差进行计数，并选择来自N个写入数据的M个数据和K个额外数据作为解码因子来检索N个写入数据。计数器值越高，选择相应位被检索的可能性越低。

3. 发明申请

US20080162793A1 MANAGEMENT METHOD FOR REDUCING UTILIZATION RATE OF RANDOM ACCESS MEMORY (RAM) USED IN FLASH MEMORY 有权
标题翻译：用于降低FLASH存储器中使用的随机存取存储器（RAM）的使用率的管理方法
公开(公告)号：US20080162793A1
公开(公告)日：2008-07-03
申请号：US11961136
申请日：2007-12-20
申请人： Yuan-sheng Chu , Jen-wei Hsieh , Yuan-hao Chang , Tei-wei Kuo , Cheng-chih Yang
发明人： Yuan-sheng Chu , Jen-wei Hsieh , Yuan-hao Chang , Tei-wei Kuo , Cheng-chih Yang
IPC分类号： G06F12/02
CPC分类号： G06F12/0246
摘要： A management method for reducing the utilization rate of random access memory (RAM) while reading data from or writing data to the flash memory is disclosed. A physical memory set is constructed from a plurality of physical memory blocks in the flash memory. A logical set is constructed from a plurality of logical blocks wherein the data stored in the logical set are stored in the physical memory set. Further, the data stored in each of the logical blocks are stored in one number of physical memory blocks. A mapping table is constructed and includes a hash function, a logical set table, a physical memory set table, and a set status table for managing the relationship among the physical memory sets, physical memory blocks, and logical blocks while reading data from or writing data to the flash memory. Further, the management method operates and maintains the physical memory sets, the physical memory blocks, and the logical blocks at a set level so that the utilization rate of random access memory is reduced to decrease the access capacity of the random access memory while operating the physical memory blocks and the logical blocks of the flash memory.
摘要翻译：公开了一种在从闪速存储器读取数据或向闪速存储器写入数据时降低随机存取存储器（RAM）利用率的管理方法。物理存储器组由闪速存储器中的多个物理存储器块构成。从存储在逻辑集合中的数据存储在物理存储器集合中的多个逻辑块构成逻辑集合。此外，存储在每个逻辑块中的数据被存储在一个数量的物理存储块中。构建映射表并且包括散列函数，逻辑集表，物理存储器集表和用于在从或写入数据时管理物理存储器组，物理存储器块和逻辑块之间的关系的设置状态表数据到闪存。此外，管理方法将物理存储器组，物理存储器块和逻辑块操作并维持在设定电平，从而降低随机存取存储器的利用率，以减小随机存取存储器的存取容量，同时操作物理存储器块和闪存的逻辑块。

4. 发明申请

US20080162796A1 METHOD FOR PERFORMING STATIC WEAR LEVELING ON FLASH MEMORY 有权
标题翻译：用于在闪速存储器上执行静态磨损水平的方法
公开(公告)号：US20080162796A1
公开(公告)日：2008-07-03
申请号：US11963262
申请日：2007-12-21
申请人： Yuan-hao Chang , Jen-wei Hsieh , Tei-wei Kuo , Cheng-chih Yang
发明人： Yuan-hao Chang , Jen-wei Hsieh , Tei-wei Kuo , Cheng-chih Yang
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F3/0688 , G06F12/00 , G06F2212/1036 , G06F2212/2022 , G06F2212/222 , G06F2212/7201 , G06F2212/7202 , G06F2212/7205 , G06F2212/7211
摘要： A method for performing a static wear leveling on a flash memory is disclosed. Accordingly, a static wear leveling unit is disposed with a block reclamation unit of either a flash translation layer or a native file system in the flash memory, and utilizes less memory space to trace a distribution status of block leveling cycles of each physical block of the flash memory. Based on the distribution record of the block leveling cycles, the number of the leveling cycles less than a premeditated threshold would be found while the system idles. Then the static wear leveling unit requests the block reclamation unit to level the found blocks. Before leveling the found block, the rarely updated data is compelled to move from one block to another block which is leveled frequently, whereby accurate wear leveling cycles for the blocks can be averaged extremely.
摘要翻译：公开了一种用于在闪速存储器上执行静态损耗均衡的方法。因此，静态损耗均衡单元在闪速存储器中设置有闪存转换层或本地文件系统的块回收单元，并且利用较少的存储空间来跟踪每个物理块的块调平周期的分布状态闪存根据块调平周期的分布记录，当系统空转时，会发现小于预谋阈值的调平周期数。然后，静态磨损均衡单元请求块回收单元对找到的块进行调平。在调平找到的块之前，很少更新的数据被迫从一个块移动到另一个频繁调平的块，从而可以极大地平均块的精确损耗平衡周期。

5. 发明授权

US08392690B2 Management method for reducing utilization rate of random access memory (RAM) used in flash memory 有权
标题翻译：用于降低闪存中使用的随机存取存储器（RAM）利用率的管理方法
公开(公告)号：US08392690B2
公开(公告)日：2013-03-05
申请号：US11961136
申请日：2007-12-20
申请人： Yuan-sheng Chu , Jen-wei Hsieh , Yuan-hao Chang , Tei-wei Kuo , Cheng-chih Yang
发明人： Yuan-sheng Chu , Jen-wei Hsieh , Yuan-hao Chang , Tei-wei Kuo , Cheng-chih Yang
IPC分类号： G06F12/00
CPC分类号： G06F12/0246
摘要： A management method for reducing the utilization rate of random access memory (RAM) while reading data from or writing data to the flash memory is disclosed. A physical memory set is constructed from a plurality of physical memory blocks in the flash memory. A logical set is constructed from a plurality of logical blocks wherein the data stored in the logical set are stored in the physical memory set. Further, the data stored in each of the logical blocks are stored in one number of physical memory blocks. A mapping table is constructed and includes a hash function, a logical set table, a physical memory set table, and a set status table for managing the relationship among the physical memory sets, physical memory blocks, and logical blocks while reading data from or writing data to the flash memory. Further, the management method operates and maintains the physical memory sets, the physical memory blocks, and the logical blocks at a set level so that the utilization rate of random access memory is reduced to decrease the access capacity of the random access memory while operating the physical memory blocks and the logical blocks of the flash memory.
摘要翻译：公开了一种在从闪速存储器读取数据或向闪速存储器写入数据时降低随机存取存储器（RAM）利用率的管理方法。物理存储器组由闪速存储器中的多个物理存储器块构成。从存储在逻辑集合中的数据存储在物理存储器集合中的多个逻辑块构成逻辑集合。此外，存储在每个逻辑块中的数据被存储在一个数量的物理存储块中。构建映射表并且包括散列函数，逻辑集表，物理存储器集表和用于在从或写入数据时管理物理存储器组，物理存储器块和逻辑块之间的关系的设置状态表数据到闪存。此外，管理方法将物理存储器组，物理存储器块和逻辑块操作并维持在设定电平，从而降低随机存取存储器的利用率，以减小随机存取存储器的存取容量，同时操作物理存储器块和闪存的逻辑块。

6. 发明申请

US20080162795A1 HARD DISK CACHE DEVICE AND METHOD 有权
标题翻译：硬盘高速缓存设备和方法
公开(公告)号：US20080162795A1
公开(公告)日：2008-07-03
申请号：US11963173
申请日：2007-12-21
申请人： Jen-wei Hsieh , Po-liang Wu , Yuan-hao Chang , Tei-wei Kuo , Cheng-chih Yang
发明人： Jen-wei Hsieh , Po-liang Wu , Yuan-hao Chang , Tei-wei Kuo , Cheng-chih Yang
IPC分类号： G06F12/08 , G06F12/02
CPC分类号： G06F12/0866 , G06F2212/222
摘要： A cache device comprises a hard disk, cache control unit and at least one flash memory, whereby the cache control unit controlling and regulating the flash memory as the hard disk cache device. The present invention method is defined by setting up a management table to manage each corresponding logical block address of the flash memory through a cache data read-out step and cache data write-in step in order to manage the cache read or write action of the flash memory on the hard disk. In addition, the step of recycling a cache space and replacing cache temporary data storage is to remove and replace temporary cache and storage space within the flash memory on the hard disk. Moreover, the step of reconstruction management table is provided to reconstruct management table loss or damage caused by power outage or irregular shut-down of the computer and will be able to provide flash memory on the hard disk cache control.
摘要翻译：缓存装置包括硬盘，高速缓存控制单元和至少一个闪速存储器，由此高速缓存控制单元控制和调节闪存作为硬盘高速缓存设备。通过设置管理表来定义本发明的方法，以通过高速缓存数据读出步骤和高速缓存数据写入步骤来管理闪存的每个对应的逻辑块地址，以便管理高速缓存读取或写入动作闪存在硬盘上。此外，回收高速缓存空间和替换高速缓存临时数据存储的步骤是删除和替换硬盘中的闪存中的临时高速缓存和存储空间。此外，重建管理表提供了重建管理表丢失或由电源中断或计算机不规则关闭造成的损坏，并能够在硬盘缓存控制上提供闪存。

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