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1. 发明申请

US20100084631A1 Phase-controlled field effect transistor device and method for manufacturing thereof 有权
标题翻译：相控场效应晶体管器件及其制造方法
公开(公告)号：US20100084631A1
公开(公告)日：2010-04-08
申请号：US12586282
申请日：2009-09-17
申请人： John Boland , Stefano Sanvito , Borislav Naydenov
发明人： John Boland , Stefano Sanvito , Borislav Naydenov
IPC分类号： H01L29/772 , H01L21/04 , H01L29/82
CPC分类号： H01L29/66977 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/1606
摘要： A phase controllable field effect transistor device is described. The device provides first and second scattering sites disposed at either side of a conducting channel region, the conducting region being gated such that on application of an appropriate signal to the gate, energies of the electrons in the channel region defined between the scattering centres may be modulated.
摘要翻译：描述了相位可控场效应晶体管器件。该器件提供设置在导电沟道区的任一侧的第一和第二散射位置，导通区被选通，使得在向栅极施加合适的信号时，限定在散射中心之间的沟道区中的电子的能量可以是调制。

2. 发明授权

US08164086B2 Phase-controlled field effect transistor device and method for manufacturing thereof 有权
标题翻译：相控场效应晶体管器件及其制造方法
公开(公告)号：US08164086B2
公开(公告)日：2012-04-24
申请号：US12586282
申请日：2009-09-17
申请人： John Boland , Stefano Sanvito , Borislav Naydenov
发明人： John Boland , Stefano Sanvito , Borislav Naydenov
IPC分类号： H01L29/06 , H01L29/768 , H01L29/76 , H01L29/94 , H01L31/062
CPC分类号： H01L29/66977 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/1606
摘要： A phase controllable field effect transistor device is described. The device provides first and second scattering sites disposed at either side of a conducting channel region, the conducting region being gated such that on application of an appropriate signal to the gate, energies of the electrons in the channel region defined between the scattering centers may be modulated.
摘要翻译：描述了相位可控场效应晶体管器件。该器件提供设置在导电沟道区的任一侧的第一和第二散射位置，导电区被选通，使得在向栅极施加合适的信号时，限定在散射中心之间的沟道区中的电子的能量可以是调制。

3. 发明申请

US20100065821A1 Molecular quantum interference device 审中-公开
标题翻译：分子量子干涉装置
公开(公告)号：US20100065821A1
公开(公告)日：2010-03-18
申请号：US12284093
申请日：2008-09-17
申请人： John Boland , Stefano Sanvito , Zekan Qian , Rui Li , Shimin Hou
发明人： John Boland , Stefano Sanvito , Zekan Qian , Rui Li , Shimin Hou
IPC分类号： H01L29/12 , G06F17/50
CPC分类号： H01L51/0595 , B82Y10/00 , H01L51/0508
摘要： A molecular quantum interference device is provided. A method for the design of such devices is also provided, the method including modelling of device performance.
摘要翻译：提供了分子量子干涉装置。还提供了用于设计这种设备的方法，该方法包括设备性能的建模。

4. 发明申请

US20090215249A1 METHOD OF FORMING AN EMBEDDED SILICON CARBON EPITAXIAL LAYER 有权
标题翻译：嵌入硅碳外延层的方法
公开(公告)号：US20090215249A1
公开(公告)日：2009-08-27
申请号：US12038288
申请日：2008-02-27
申请人： John Boland , Zhiyuan Ye , Yihwan Kim
发明人： John Boland , Zhiyuan Ye , Yihwan Kim
IPC分类号： H01L21/36
CPC分类号： H01L21/0262 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/02639 , H01L29/165 , H01L29/78 , H01L29/7848
摘要： Methods for forming embedded epitaxial layers containing silicon and carbon are disclosed. Specific embodiments pertain to the formation embedded epitaxial layers containing silicon and carbon on silicon wafers. In specific embodiments an epitaxial layer of silicon and carbon is non-selectively formed on a substrate or silicon wafer, portions of this layer are removed to expose the underlying substrate or silicon wafer, and an epitaxial layer containing silicon is formed on the exposed substrate or silicon wafers. In specific embodiments, gates are formed on the resulting silicon-containing epitaxial layers.
摘要翻译：公开了用于形成包含硅和碳的嵌入式外延层的方法。具体实施方案涉及在硅晶片上形成包含硅和碳的嵌入式外延层的形成。在具体实施方案中，在衬底或硅晶片上非选择性地形成硅和碳的外延层，去除该层的部分以暴露下面的衬底或硅晶片，并且在暴露的衬底上形成包含硅的外延层，硅片。在具体实施例中，在所得到的含硅外延层上形成栅极。

5. 发明申请

US20050244043A1 Method of comparing the size of a feature in sequential X-ray images 有权
标题翻译：比较连续X射线图像中特征的大小的方法
公开(公告)号：US20050244043A1
公开(公告)日：2005-11-03
申请号：US10837794
申请日：2004-05-03
申请人： John Squilla , John Boland , John Spoonhower
发明人： John Squilla , John Boland , John Spoonhower
IPC分类号： A61C19/04 , G06K9/00 , G06T7/00
CPC分类号： G06T7/0004 , A61C19/04
摘要： A method of comparing the size of a feature in sequential X-ray images includes the steps of: forming first and second sequential X-ray images including an image of the feature, an image of a first target located directly adjacent the feature and an image of a second target located between the object and an X-ray detector; calculating scale factors for the first and second X-ray images based on the relative sizes of the images of the first and second targets in the X-ray images; measuring the sizes of the feature in the first and second X-ray images; adjusting the measured sizes of the feature in the first and second X-ray images by the respective scale factors; and comparing the adjusted measured sizes. A computer program product for performing the method is also provided.
摘要翻译：在顺序X射线图像中比较特征尺寸的方法包括以下步骤：形成包括特征图像的第一和第二连续X射线图像，与特征直接相邻的第一目标的图像和图像位于物体和X射线检测器之间的第二目标; 基于X射线图像中的第一和第二目标的图像的相对大小来计算第一和第二X射线图像的比例因子; 测量第一和第二X射线图像中的特征的尺寸; 通过各个比例因子调整第一和第二X射线图像中的特征的测量尺寸; 并比较调整后的测量尺寸。还提供了一种用于执行该方法的计算机程序产品。

6. 发明授权

US07700424B2 Method of forming an embedded silicon carbon epitaxial layer 有权
标题翻译：形成嵌入式硅碳外延层的方法
公开(公告)号：US07700424B2
公开(公告)日：2010-04-20
申请号：US12038288
申请日：2008-02-27
申请人： John Boland , Zhiyuan Ye , Yihwan Kim
发明人： John Boland , Zhiyuan Ye , Yihwan Kim
IPC分类号： H01L21/336
CPC分类号： H01L21/0262 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/02639 , H01L29/165 , H01L29/78 , H01L29/7848
摘要： Methods for forming embedded epitaxial layers containing silicon and carbon are disclosed. Specific embodiments pertain to the formation embedded epitaxial layers containing silicon and carbon on silicon wafers. In specific embodiments an epitaxial layer of silicon and carbon is non-selectively formed on a substrate or silicon wafer, portions of this layer are removed to expose the underlying substrate or silicon wafer, and an epitaxial layer containing silicon is formed on the exposed substrate or silicon wafers. In specific embodiments, gates are formed on the resulting silicon-containing epitaxial layers.
摘要翻译：公开了用于形成包含硅和碳的嵌入式外延层的方法。具体实施方案涉及在硅晶片上形成包含硅和碳的嵌入式外延层的形成。在具体实施方案中，在衬底或硅晶片上非选择性地形成硅和碳的外延层，去除该层的部分以暴露下面的衬底或硅晶片，并且在暴露的衬底上形成包含硅的外延层，硅片。在具体实施例中，在所得到的含硅外延层上形成栅极。

7. 发明申请

US20060120582A1 Method for determining dental alignment using radiographs 有权
标题翻译：使用X光照片确定牙齿矫正的方法
公开(公告)号：US20060120582A1
公开(公告)日：2006-06-08
申请号：US10606709
申请日：2003-06-26
申请人： John Squilla , John Boland , John Spoonhower
发明人： John Squilla , John Boland , John Spoonhower
IPC分类号： G06K9/00
CPC分类号： A61C9/004 , A61C13/0004
摘要： A method for determining dental alignment of a 3-dimensional model of one or more teeth of a patient comprises the steps of: (a) obtaining a radiograph of the teeth of the patient; (b) obtaining a digital image from the radiograph indicative of the dental alignment of the teeth relative to a dental arch of the patient; (c) overlaying the 3-dimensional model of the teeth with the digital image obtained from the radiograph; (d) determining vertical and horizontal mis-alignment of the teeth in the 3-dimensional model relative to the digital image obtained from the radiograph; and (e) adjusting the 3-dimensional model to correct for the mis-alignment, thereby producing an adjusted 3-dimensional model of the teeth that is corrected for the vertical and horizontal alignment of the teeth relative to the dental arch.
摘要翻译：一种用于确定患者的一个或多个牙齿的三维模型的牙线校准的方法，包括以下步骤：（a）获得患者牙齿的放射照片; （b）从指示牙齿相对于患者牙弓的牙齿排列的X射线照片获得数字图像; （c）用从X射线照片获得的数字图像覆盖牙齿的三维模型; （d）确定相对于从X射线照片获得的数字图像，三维模型中的牙齿的垂直和水平不对准; 和（e）调整三维模型以校正错误对准，由此产生针对牙齿相对于牙弓的垂直和水平对准而被校正的牙齿的经调整的三维模型。

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