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1. 发明申请

US20110168671A1 PROCESS CONTROL USING SIGNAL REPRESENTATIVE OF A THROTTLE VALVE POSITION 审中-公开
标题翻译：使用阀门位置的信号代表进行过程控制
公开(公告)号：US20110168671A1
公开(公告)日：2011-07-14
申请号：US12684162
申请日：2010-01-08
申请人： John M. Yamartino , Anthony D. Lisi
发明人： John M. Yamartino , Anthony D. Lisi
IPC分类号： B44C1/22 , C23F1/08
CPC分类号： H01J37/32963 , H01L21/31116
摘要： In accordance with an embodiment of the invention, a step in a fabrication process can be conducted so as to determine when the process has reached an end point. End point detection can be performed by detecting when a operating process condition changes. For example, in one embodiment, a step in a fabrication process (e.g., an etching step) can be conducted in a chamber by varying a position of a throttle valve connected to the chamber so as to maintain a desired pressure within the chamber. In such method, it can be determined when the etching step has reached an end point by detecting when a signal representative of the throttle valve position changes in a particular way which matches an expected signature. In another embodiment, a step in a fabrication process can be conducted in a chamber by maintaining a desired flow within the chamber, such as by controlling a throttle valve, and allowing the pressure within the chamber to vary. In such method, it can be determined when the step has reached an end point by detecting when a signal representative of the pressure changes. In a particular embodiment in which end point detection is based on change in pressure, the throttle valve can be maintained at a particular position when conducting the step in the fabrication process.
摘要翻译：根据本发明的实施例，可以进行制造过程中的步骤，以便确定过程何时达到终点。可以通过检测操作过程条件何时改变来执行终点检测。例如，在一个实施例中，可以通过改变与腔室连接的节流阀的位置来在腔室中进行制造工艺（例如，蚀刻步骤）中的步骤，以便在室内保持期望的压力。在这种方法中，可以通过检测表示节气门位置的信号何时以预期签名的特定方式改变，来确定蚀刻步骤何时已经到达终点。在另一个实施例中，制造过程中的步骤可以通过在腔室内维持期望的流动，例如通过控制节流阀，并允许腔室内的压力变化来在腔室中进行。在这种方法中，通过检测代表压力的信号何时改变，可以确定步骤何时达到终点。在其中端点检测基于压力变化的特定实施例中，当在制造过程中进行步骤时，节流阀可以保持在特定位置。

2. 发明授权

US08676367B2 Lot process order modification to improve detection of manufacturing effects 失效
标题翻译：批量处理订单修改，以改善制造效果的检测
公开(公告)号：US08676367B2
公开(公告)日：2014-03-18
申请号：US12914223
申请日：2010-10-28
申请人： John M. Yamartino
发明人： John M. Yamartino
IPC分类号： G06F19/00 , B24B49/00
CPC分类号： H01L21/67745 , H01L21/67276
摘要： A system for lot based, multi-step wafer manufacturing processes is provided and includes a transfer apparatus, disposed among tools for performing respective process steps on each wafer of each lot of wafers transferred thereto, the transfer apparatus being configured to transfer each lot from a current tool to a next tool in accordance with a process step sequence, a dispatcher operably coupled to the transfer apparatus to modify the lot order in response to a modification condition detection, a measurement unit configured to receive each wafer of each fully processed lot and to collect measurements therefrom and a processor disposed in signal communication with the dispatcher and the measurement unit to analyze the measurements relative to the lot order for evidence that a process step of a corresponding tool is responsible for performance effects.
摘要翻译：提供了一种用于基于批次的多步骤晶片制造工艺的系统，并且包括传送装置，设置在用于在每个转移到其上的每批晶片的每个晶片上执行各个处理步骤的工具之间，传送装置被配置为将每个批次从当前工具根据工艺步骤顺序到下一个工具，调度器可操作地耦合到传送装置以响应于修改条件检测来修改批次顺序;测量单元，被配置为接收每个完全处理批次的每个晶片，并且从其中收集测量结果，处理器与调度器和测量单元进行信号通信，以分析相对于批次的测量结果，证明相应工具的处理步骤负责性能效果。

3. 发明申请

US20120109351A1 LOT PROCESS ORDER MODIFICATION TO IMPROVE DETECTION OF MANUFACTURING EFFECTS 失效
标题翻译：更改过程修改以改进制造效果的检测
公开(公告)号：US20120109351A1
公开(公告)日：2012-05-03
申请号：US12914223
申请日：2010-10-28
申请人： John M. Yamartino
发明人： John M. Yamartino
IPC分类号： G06F19/00
CPC分类号： H01L21/67745 , H01L21/67276
摘要： A system for lot based, multi-step wafer manufacturing processes is provided and includes a transfer apparatus, disposed among tools for performing respective process steps on each wafer of each lot of wafers transferred thereto, the transfer apparatus being configured to transfer each lot from a current tool to a next tool in accordance with a process step sequence, a dispatcher operably coupled to the transfer apparatus to modify the lot order in response to a modification condition detection, a measurement unit configured to receive each wafer of each fully processed lot and to collect measurements therefrom and a processor disposed in signal communication with the dispatcher and the measurement unit to analyze the measurements relative to the lot order for evidence that a process step of a corresponding tool is responsible for performance effects.
摘要翻译：提供了一种用于基于批次的多步骤晶片制造工艺的系统，并且包括传送装置，设置在用于在每个转移到其上的每批晶片的每个晶片上执行各个处理步骤的工具之间，传送装置被配置为将每个批次从当前工具根据工艺步骤顺序到下一个工具，调度器可操作地耦合到传送装置以响应于修改条件检测来修改批次顺序;测量单元，被配置为接收每个完全处理批次的每个晶片，并且从其中收集测量结果，处理器与调度器和测量单元进行信号通信，以分析相对于批次的测量结果，证明相应工具的处理步骤负责性能效果。

4. 发明申请

US20090192632A1 METHOD AND SYSTEM OF MONITORING MANUFACTURING EQUIPMENT 有权
标题翻译：监控制造设备的方法和系统
公开(公告)号：US20090192632A1
公开(公告)日：2009-07-30
申请号：US12022448
申请日：2008-01-30
申请人： John M. Yamartino
发明人： John M. Yamartino
IPC分类号： G05B11/01
CPC分类号： G05B23/024 , G05B23/0281
摘要： A method and system is provided for monitoring manufacturing equipment and, more particularly, for monitoring manufacturing equipment in a semiconductor fabrication facility using existing tool elements. The method includes operating a tool working at an operating mode such that at least one of its control parameters is outside of a normal operating range, and measuring the at least on of the control parameters of the tool working at the operating mode outside of the normal operating range. The method further includes detecting a change to a condition of the tool based on the measuring of the at least one control parameter.
摘要翻译：提供了一种用于监测制造设备的方法和系统，更具体地，用于使用现有工具元件监测半导体制造设备中的制造设备。该方法包括操作在操作模式下工作的工具，使得其控制参数中的至少一个超出正常操作范围，并且测量在正常工作之外的操作模式下工作的工具的至少一个控制参数工作范围。该方法还包括基于至少一个控制参数的测量来检测对工具的状况的改变。

5. 发明授权

US08257546B2 Method and system for monitoring an etch process 有权
标题翻译：用于监测蚀刻工艺的方法和系统
公开(公告)号：US08257546B2
公开(公告)日：2012-09-04
申请号：US10674568
申请日：2003-09-29
申请人： Matthew Fenton Davis , John M. Yamartino , Lei Lian
发明人： Matthew Fenton Davis , John M. Yamartino , Lei Lian
IPC分类号： H01L21/00
CPC分类号： H01J37/32935 , G03F7/70625 , H01J37/32963 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for monitoring an etch process. The etch process may be monitored using measurement information (e.g., critical dimensions (CD), layer thickness, and the like) provided ex-situ with respect to the etch process in combination with in-situ monitoring (e.g., spectroscopy, interferometry, scatterometry, reflectometry, and the like) performed during the etch process. The ex-situ measurement information in combination with the in-situ monitoring may be used to monitor for example, an endpoint of an etch process, an etch depth profile of a feature formed on a substrate, fault detection of an integrated circuit manufacturing process, and the like.
摘要翻译：一种用于监测蚀刻工艺的方法和装置。可以使用与原位监测（例如，光谱学，干涉测量，散射测量法）相关的蚀刻过程非位置提供的测量信息（例如，临界尺寸（CD），层厚度等）来监测蚀刻工艺，反射测量等）。与现场监测结合的非原位测量信息可以用于监测例如蚀刻工艺的端点，形成在衬底上的特征的蚀刻深度分布，集成电路制造工艺的故障检测，等等。

6. 发明授权

US08010225B2 Method and system of monitoring manufacturing equipment 有权
标题翻译：监控制造设备的方法和系统
公开(公告)号：US08010225B2
公开(公告)日：2011-08-30
申请号：US12022448
申请日：2008-01-30
申请人： John M. Yamartino
发明人： John M. Yamartino
IPC分类号： G06F19/00 , G01L7/00 , G01F19/00 , C03B5/027 , B44C1/22
CPC分类号： G05B23/024 , G05B23/0281
摘要： A method and system is provided for monitoring manufacturing equipment and, more particularly, for monitoring manufacturing equipment in a semiconductor fabrication facility using existing tool elements. The method includes operating a tool working at an operating mode such that at least one of its control parameters is outside of a normal operating range, and measuring the at least on of the control parameters of the tool working at the operating mode outside of the normal operating range. The method further includes detecting a change to a condition of the tool based on the measuring of the at least one control parameter.
摘要翻译：提供了一种用于监测制造设备的方法和系统，更具体地，用于使用现有工具元件监测半导体制造设备中的制造设备。该方法包括操作在操作模式下工作的工具，使得其控制参数中的至少一个超出正常操作范围，并且测量在正常工作之外的操作模式下工作的工具的至少一个控制参数工作范围。该方法还包括基于至少一个控制参数的测量来检测对工具的状况的改变。

7. 发明授权

US07624003B2 Split-phase chamber modeling for chamber matching and fault detection 失效
标题翻译：用于室匹配和故障检测的分相室建模
公开(公告)号：US07624003B2
公开(公告)日：2009-11-24
申请号：US11033363
申请日：2005-01-10
申请人： John M. Yamartino
发明人： John M. Yamartino
IPC分类号： G06G7/48
CPC分类号： G05B17/02
摘要： In at least one embodiment, the present invention is a method for thin-film process chamber data analysis, which includes acquiring chamber data, defining an adjustment portion of the chamber data and a steady-state portion of the chamber data, and forming a chamber model having an adjustment portion and a steady-state portion. The method can further include comparing the chamber model with a subject chamber to provide a chamber data comparison and utilizing the chamber data comparison.
摘要翻译：在至少一个实施例中，本发明是一种用于薄膜处理室数据分析的方法，其包括获取室数据，限定室数据的调节部分和室数据的稳态部分，以及形成室模型具有调节部分和稳态部分。该方法还可以包括将室模型与对象室进行比较以提供室数据比较并利用室数据比较。

8. 发明授权

US06566272B2 Method for providing pulsed plasma during a portion of a semiconductor wafer process 有权
标题翻译：在半导体晶片工艺的一部分期间提供脉冲等离子体的方法
公开(公告)号：US06566272B2
公开(公告)日：2003-05-20
申请号：US09360883
申请日：1999-07-23
申请人： Alex Paterson , John M. Yamartino , Peter K. Loewenhardt , Wade Zawalski
发明人： Alex Paterson , John M. Yamartino , Peter K. Loewenhardt , Wade Zawalski
IPC分类号： H01L21302
CPC分类号： H01J37/321 , H01J2237/0206 , H01L21/3065 , H01L21/32136 , H01L21/32137
摘要： A method for processing a semiconductor wafer with a plasma using continuous RF power for a first phase of wafer processing and with pulsed RF power for a second phase of wafer processing.
摘要翻译：一种使用等离子体处理半导体晶片的方法，该等离子体使用用于晶片处理的第一阶段的连续RF功率和用于晶片处理的第二阶段的脉冲RF功率。

9. 发明申请

US20120291952A1 METHOD AND SYSTEM FOR MONITORING AN ETCH PROCESS 审中-公开
标题翻译：监测过程的方法和系统
公开(公告)号：US20120291952A1
公开(公告)日：2012-11-22
申请号：US13564963
申请日：2012-08-02
申请人： Matthew Fenton Davis , John M. Yamartino , Lei Lian
发明人： Matthew Fenton Davis , John M. Yamartino , Lei Lian
IPC分类号： G06F15/00 , B44C1/22
CPC分类号： H01J37/32935 , G03F7/70625 , H01J37/32963 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for monitoring an etch process. The etch process may be monitored using measurement information (e.g., critical dimensions (CD), layer thickness, and the like) provided ex-situ with respect to the etch process in combination with in-situ monitoring (e.g., spectroscopy, interferometry, scatterometry, reflectometry, and the like) performed during the etch process. The ex-situ measurement information in combination with the in-situ monitoring may be used to monitor for example, an endpoint of an etch process, an etch depth profile of a feature formed on a substrate, fault detection of an integrated circuit manufacturing process, and the like.
摘要翻译：一种用于监测蚀刻工艺的方法和装置。可以使用与原位监测（例如，光谱学，干涉测量，散射测量法）相关的蚀刻过程非位置提供的测量信息（例如，临界尺寸（CD），层厚度等）来监测蚀刻工艺，反射测量等）。与现场监测结合的非原位测量信息可以用于监测例如蚀刻工艺的端点，形成在衬底上的特征的蚀刻深度分布，集成电路制造工艺的故障检测，等等。

10. 发明申请

US20090061544A1 TRAJECTORY BASED CONTROL OF PLASMA PROCESSING 审中-公开
标题翻译：基于TRAJECTORY的等离子体处理控制
公开(公告)号：US20090061544A1
公开(公告)日：2009-03-05
申请号：US11948030
申请日：2007-11-30
申请人： JOHN P. HOLLAND , John M. Yamartino , Thorsen B. Lill , Meihua Shen , Alexander Paterson , Valentin N. Todorow
发明人： JOHN P. HOLLAND , John M. Yamartino , Thorsen B. Lill , Meihua Shen , Alexander Paterson , Valentin N. Todorow
IPC分类号： H01L21/66 , H01L21/306
CPC分类号： H01L21/32137 , H01J37/32935 , H01J37/3299 , H01L22/26
摘要： A method of controlling a plasma processing according to trajectories connecting start and stop values of parameters controlling the plasma processing, for example, gas flow and power supplied to generate the plasma. The trajectories maybe based on equations including at least time as a variable. At set times within the processing, the values of the parameters are updated according to the predetermined trajectories. Sensors associated with the chamber may also adjust the trajectories, provide variables to the equations, and/or define the trajectories.
摘要翻译：根据控制等离子体处理的参数的启动和停止值的轨迹控制等离子体处理的方法，例如供应的气体流量和功率以产生等离子体。轨迹可以基于包括至少时间作为变量的方程式。在处理期间的设定时间，根据预定的轨迹更新参数的值。与室相关联的传感器还可以调整轨迹，向等式提供变量，和/或定义轨迹。

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