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1. 发明授权

US08563349B2 Method of forming semiconductor device 有权
标题翻译：半导体器件形成方法
公开(公告)号：US08563349B2
公开(公告)日：2013-10-22
申请号：US13281870
申请日：2011-10-26
申请人： Jong-Yun Myung , Hyuek-Jae Lee , Ji-Sun Hong , Tae-Je Cho , Un-Byoung Kang , Hyung-Sun Jang , Eun-Mi Kim , Jung-Hwan Kim , Tae-Hong Min
发明人： Jong-Yun Myung , Hyuek-Jae Lee , Ji-Sun Hong , Tae-Je Cho , Un-Byoung Kang , Hyung-Sun Jang , Eun-Mi Kim , Jung-Hwan Kim , Tae-Hong Min
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , H01L21/6836 , H01L21/76898 , H01L23/3128 , H01L24/05 , H01L24/13 , H01L24/16 , H01L25/0657 , H01L27/1464 , H01L2221/68327 , H01L2224/0401 , H01L2224/05009 , H01L2224/05611 , H01L2224/05624 , H01L2224/05647 , H01L2224/05655 , H01L2224/05657 , H01L2224/05666 , H01L2224/05684 , H01L2224/13007 , H01L2224/13022 , H01L2224/13025 , H01L2224/131 , H01L2224/16146 , H01L2224/16225 , H01L2224/17181 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2924/12043 , H01L2924/15311 , H01L2924/014 , H01L2924/00
摘要： A method of forming a semiconductor device includes preparing a semiconductor substrate having a plurality of chips formed thereon and a scribe lane disposed between the chips, simultaneously forming a groove having a first depth in the scribe lane, and a through hole penetrating the chips and having a second depth. The chips are separated along the groove. The first depth is smaller than the second depth.
摘要翻译：一种形成半导体器件的方法包括制备其上形成有多个芯片的半导体衬底和设置在芯片之间的划线，同时形成在划线中具有第一深度的凹槽，以及穿透芯片的通孔，并具有第二个深度。芯片沿凹槽分开。第一深度小于第二深度。

2. 发明申请

US20120156823A1 METHOD OF FORMING SEMICONDUCTOR DEVICE 有权
标题翻译：形成半导体器件的方法
公开(公告)号：US20120156823A1
公开(公告)日：2012-06-21
申请号：US13281870
申请日：2011-10-26
申请人： Jong-Yun MYUNG , Hyuek-Jae Lee , Ji-Sun Hong , Tae-Je Cho , Un-Byoung Kang , Hyung-Sun Jang , Eun-Mi Kim , Jung-Hwan Kim , Tae-Hong Min
发明人： Jong-Yun MYUNG , Hyuek-Jae Lee , Ji-Sun Hong , Tae-Je Cho , Un-Byoung Kang , Hyung-Sun Jang , Eun-Mi Kim , Jung-Hwan Kim , Tae-Hong Min
IPC分类号： H01L31/18 , H01L21/50 , H01L21/78
CPC分类号： H01L21/78 , H01L21/6836 , H01L21/76898 , H01L23/3128 , H01L24/05 , H01L24/13 , H01L24/16 , H01L25/0657 , H01L27/1464 , H01L2221/68327 , H01L2224/0401 , H01L2224/05009 , H01L2224/05611 , H01L2224/05624 , H01L2224/05647 , H01L2224/05655 , H01L2224/05657 , H01L2224/05666 , H01L2224/05684 , H01L2224/13007 , H01L2224/13022 , H01L2224/13025 , H01L2224/131 , H01L2224/16146 , H01L2224/16225 , H01L2224/17181 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2924/12043 , H01L2924/15311 , H01L2924/014 , H01L2924/00
摘要： A method of forming a semiconductor device includes preparing a semiconductor substrate having a plurality of chips formed thereon and a scribe lane disposed between the chips, simultaneously forming a groove having a first depth in the scribe lane, and a through hole penetrating the chips and having a second depth. The chips are separated along the groove. The first depth is smaller than the second depth.
摘要翻译：一种形成半导体器件的方法包括制备其上形成有多个芯片的半导体衬底和设置在芯片之间的划线，同时形成在划线中具有第一深度的凹槽，以及穿透芯片的通孔，并具有第二个深度。芯片沿凹槽分开。第一深度小于第二深度。

3. 发明授权

US08304288B2 Methods of packaging semiconductor devices including bridge patterns 失效
标题翻译：包括桥模式的半导体器件的封装方法
公开(公告)号：US08304288B2
公开(公告)日：2012-11-06
申请号：US13155647
申请日：2011-06-08
申请人： Hyuek-Jae Lee , Ji-Sun Hong , Tae-Je Cho , Jong-Yun Myung , Young-Bok Kim , Hyung-Sun Jang , Eun-Mi Kim
发明人： Hyuek-Jae Lee , Ji-Sun Hong , Tae-Je Cho , Jong-Yun Myung , Young-Bok Kim , Hyung-Sun Jang , Eun-Mi Kim
IPC分类号： H01L21/00
CPC分类号： H01L21/76898 , H01L27/14618 , H01L27/14683 , H01L2224/13
摘要： A method of packaging a semiconductor device may include providing a semiconductor substrate including first and second spaced apart semiconductor chip areas, and adhering a cover on the first and second spaced apart semiconductor chip areas of the semiconductor substrate. A scribe line may be formed through the semiconductor substrate between the first and second semiconductor chip areas with a semiconductor bridge pattern remaining connected between the first and second spaced apart semiconductor chip areas after forming the scribe line. The cover and the semiconductor bridge pattern may then be cut after forming the scribe line.
摘要翻译：封装半导体器件的方法可以包括提供包括第一和第二间隔开的半导体芯片区域的半导体衬底，以及将覆盖物粘附在半导体衬底的第一和第二间隔的半导体芯片区域上。可以在第一和第二半导体芯片区域之间通过半导体衬底形成划线，在形成划线之后，半导体电桥图案保持连接在第一和第二间隔开的半导体芯片区域之间。然后可以在形成划线之后切割盖和半导体桥模式。

4. 发明申请

US20110306167A1 Methods of Packaging Semiconductor Devices Including Bridge Patterns 失效
标题翻译：包括桥模式的半导体器件的封装方法
公开(公告)号：US20110306167A1
公开(公告)日：2011-12-15
申请号：US13155647
申请日：2011-06-08
申请人： Hyuek-Jae Lee , Ji-Sun Hong , Tae-je Cho , Jong-Yun Myung , Young-Bok Kim , Hyung-Sun Jang , Eun-Mi Kim
发明人： Hyuek-Jae Lee , Ji-Sun Hong , Tae-je Cho , Jong-Yun Myung , Young-Bok Kim , Hyung-Sun Jang , Eun-Mi Kim
IPC分类号： H01L21/782
CPC分类号： H01L21/76898 , H01L27/14618 , H01L27/14683 , H01L2224/13
摘要： A method of packaging a semiconductor device may include providing a semiconductor substrate including first and second spaced apart semiconductor chip areas, and adhering a cover on the first and second spaced apart semiconductor chip areas of the semiconductor substrate. A scribe line may be formed through the semiconductor substrate between the first and second semiconductor chip areas with a semiconductor bridge pattern remaining connected between the first and second spaced apart semiconductor chip areas after forming the scribe line. The cover and the semiconductor bridge pattern may then be cut after forming the scribe line.
摘要翻译：封装半导体器件的方法可以包括提供包括第一和第二间隔开的半导体芯片区域的半导体衬底，以及将覆盖物粘附在半导体衬底的第一和第二间隔的半导体芯片区域上。可以在第一和第二半导体芯片区域之间通过半导体衬底形成划线，在形成划线之后，半导体电桥图案保持连接在第一和第二间隔开的半导体芯片区域之间。然后可以在形成划线之后切割盖和半导体桥模式。

5. 发明授权

US07499074B2 Mobile communication device with enhanced image communication capability 有权
标题翻译：具有增强图像通信功能的移动通信设备
公开(公告)号：US07499074B2
公开(公告)日：2009-03-03
申请号：US11023084
申请日：2004-12-27
申请人： Eun-Mi Kim , Yoo-Seok Cho , Dong-Eun Kim , Jung-Pil Yun
发明人： Eun-Mi Kim , Yoo-Seok Cho , Dong-Eun Kim , Jung-Pil Yun
IPC分类号： H04N7/14 , H04M1/00
CPC分类号： G06F1/1616 , G06F1/1605 , G06F1/1647 , G06F1/165 , G06F1/1681 , G06F1/1686 , G06F1/1692 , H04M1/0218 , H04M1/0245 , H04M2250/16 , H04M2250/52 , H04N2007/145
摘要： The present invention discloses a mobile communication device that allows the user to easily perform simultaneous voice communication and image communication that allows the user to transmit high quality image information to another user and receive high quality image information from another user. The mobile communication device provides multiple cameras and/or display screens that allow a user to easily photograph a subject and view captured images that are received either from a camera located in the device or from another user.
摘要翻译：本发明公开了一种移动通信设备，其允许用户容易地执行语音通信和图像通信，允许用户将高质量的图像信息发送给另一用户，并从另一用户接收高质量的图像信息。移动通信设备提供多个照相机和/或显示屏幕，其允许用户容易地拍摄被摄体并查看从位于设备中的照相机或从另一用户接收的拍摄图像。

6. 发明申请

US20100299767A1 TREM-2 GENE AND PROTEIN AS INHIBITORS OF EXPRESSION OF GA733-2, AND TRANSGENIC ANIMALS COMPRISING THE SAME AND USES THEREOF 失效
标题翻译：作为GA733-2表达的抑制剂的TREM-2基因和蛋白质以及包含其的转基因动物及其用途
公开(公告)号：US20100299767A1
公开(公告)日：2010-11-25
申请号：US12863548
申请日：2009-02-18
申请人： Hyung-Sik Kang , Eun-Mi Kim , Dong-Hern Kim , Ha-Rim Choi , Eun-Hee Lee , Il-Soo Kim , Chang-Eon Park
发明人： Hyung-Sik Kang , Eun-Mi Kim , Dong-Hern Kim , Ha-Rim Choi , Eun-Hee Lee , Il-Soo Kim , Chang-Eon Park
IPC分类号： A61K49/00 , A01K67/00 , C12Q1/68 , G01N33/574 , A61K31/711 , A61K38/16 , A61P35/00
CPC分类号： C07K14/705 , A01K67/0275 , A01K2217/052 , A01K2227/105 , A01K2267/0331 , A61K48/00 , C12N15/8509
摘要： Disclosed are a composition for inhibiting the expression of GA733-2 or for detecting GA733-2, which comprises TREM-2 gene or protein, a transgenic animal containing same, and a method using the same.
摘要翻译：公开了抑制GA733-2的表达或检测GA733-2的组合物，其包含TREM-2基因或蛋白质，含有它们的转基因动物及其使用方法。

7. 发明授权

US07838361B2 Method for fabricating recess gate in semiconductor device 有权
标题翻译：在半导体器件中制造凹槽的方法
公开(公告)号：US07838361B2
公开(公告)日：2010-11-23
申请号：US12239492
申请日：2008-09-26
申请人： Yong-Tae Cho , Eun-Mi Kim
发明人： Yong-Tae Cho , Eun-Mi Kim
IPC分类号： H01L21/336
CPC分类号： H01L21/28114 , H01L29/4236 , H01L29/42372 , H01L29/66621
摘要： A method for fabricating a recess gate in a semiconductor device includes etching a silicon substrate to form a trench that defines an active region, forming a device isolation layer that gap-fills the trench, forming a hard mask layer over the silicon substrate, the hard mask layer comprising a stack of an oxide layer and an amorphous carbon layer, wherein the hard mask layer exposes a channel target region of the active region, and forming a recess region with a dual profile by first etching and second etching the channel target region using the hard mask layer as an etch barrier, wherein the second etching is performed after removing the amorphous carbon layer.
摘要翻译：一种在半导体器件中制造凹陷栅的方法，包括蚀刻硅衬底以形成限定有源区的沟槽，形成间隙填充沟槽的器件隔离层，在硅衬底上形成硬掩模层，硬的掩模层，其包括氧化物层和非晶碳层的堆叠，其中所述硬掩模层暴露所述有源区的沟道目标区域，并且通过第一蚀刻形成具有双轮廓的凹陷区域，并且使用所述硬掩模层作为蚀刻阻挡层，其中所述第二蚀刻在去除所述无定形碳层之后进行。

8. 发明授权

US07642161B2 Method of fabricating recess gate in semiconductor device 有权
标题翻译：在半导体器件中制造凹槽的方法
公开(公告)号：US07642161B2
公开(公告)日：2010-01-05
申请号：US11644880
申请日：2006-12-26
申请人： Yong-Tae Cho , Eun-Mi Kim
发明人： Yong-Tae Cho , Eun-Mi Kim
IPC分类号： H01L21/336
CPC分类号： H01L29/66621
摘要： A method of fabricating a semiconductor device includes forming an isolation structure in a substrate to define an active region, forming a recess mask pattern over the isolation structure and the active region, etching the isolation structure exposed by the recess mask pattern to a certain depth, etching the substrate to form a recess pattern, and forming a gate electrode over the recess pattern.
摘要翻译：制造半导体器件的方法包括在衬底中形成隔离结构以限定有源区，在隔离结构和有源区上形成凹陷掩模图案，将由凹槽掩模图案暴露的隔离结构蚀刻到一定深度，蚀刻衬底以形成凹陷图案，并在凹槽图案上形成栅电极。

9. 发明申请

US20070070184A1 Mobile Communication Device With Enhanced Image Communication Capability 有权
标题翻译：具有增强的图像通信能力的移动通信设备
公开(公告)号：US20070070184A1
公开(公告)日：2007-03-29
申请号：US11558397
申请日：2006-11-09
申请人： Eun-Mi Kim , Yoo-Seok Cho , Dong-Eun Kim , Jung-Pil Yun
发明人： Eun-Mi Kim , Yoo-Seok Cho , Dong-Eun Kim , Jung-Pil Yun
IPC分类号： H04N7/14
CPC分类号： G06F1/1616 , G06F1/1605 , G06F1/1647 , G06F1/165 , G06F1/1681 , G06F1/1686 , G06F1/1692 , H04M1/0218 , H04M1/0245 , H04M2250/16 , H04M2250/52 , H04N2007/145
摘要： The present invention discloses a mobile communication device that allows the user to easily perform simultaneous voice communication and image communication that allows the user to transmit high quality image information to another user and receive high quality image information from another user. The mobile communication device provides multiple cameras and/or display screens that allow a user to easily photograph a subject and view captured images that are received either from a camera located in the device or from another user.
摘要翻译：本发明公开了一种移动通信设备，其允许用户容易地执行语音通信和图像通信，允许用户将高质量的图像信息发送给另一用户，并从另一用户接收高质量的图像信息。移动通信设备提供多个照相机和/或显示屏幕，其允许用户容易地拍摄被摄体并查看从位于设备中的照相机或从另一用户接收的拍摄图像。

10. 发明授权

US08263822B2 TREM-2 gene and protein as inhibitors of expression of GA733-2, and transgenic animals comprising the same and uses thereof 失效
标题翻译： TREM-2基因和蛋白质作为GA733-2表达的抑制剂，以及包含其的转基因动物及其用途
公开(公告)号：US08263822B2
公开(公告)日：2012-09-11
申请号：US12863548
申请日：2009-02-18
申请人： Hyung-Sik Kang , Eun-Mi Kim , Dong-Hern Kim , Ha-Rim Choi , Eun-Hee Lee , Il-Soo Kim , Chang-Eon Park
发明人： Hyung-Sik Kang , Eun-Mi Kim , Dong-Hern Kim , Ha-Rim Choi , Eun-Hee Lee , Il-Soo Kim , Chang-Eon Park
IPC分类号： A01K67/00 , A01K67/027 , A01K67/033 , G01N33/00
CPC分类号： C07K14/705 , A01K67/0275 , A01K2217/052 , A01K2227/105 , A01K2267/0331 , A61K48/00 , C12N15/8509
摘要： Disclosed are a composition for inhibiting the expression of GA733-2 or for detecting GA733-2, which comprises TREM-2 gene or protein, a transgenic animal containing same, and a method using the same.
摘要翻译：公开了抑制GA733-2的表达或检测GA733-2的组合物，其包含TREM-2基因或蛋白质，含有它们的转基因动物及其使用方法。

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