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1. 发明授权

US09647201B2 Magnetic memory devices 有权
公开(公告)号：US09647201B2
公开(公告)日：2017-05-09
申请号：US14729536
申请日：2015-06-03
申请人： Jongchul Park , Kyung Rae Byun
发明人： Jongchul Park , Kyung Rae Byun
IPC分类号： H01L29/82 , H01L43/08 , G11C11/16 , H01L27/22 , H01L43/12
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , H01L27/228 , H01L43/12
摘要： The inventive concepts provide magnetic memory devices. The device includes a first magnetic pattern provided in one united body on a substrate and having a plurality of through-holes, a plurality of second magnetic patterns spaced apart from each other on the first magnetic pattern, a tunnel barrier between the first magnetic pattern and the second magnetic patterns, top electrodes disposed on the second magnetic patterns, respectively, and a plurality of plugs electrically connecting the top electrodes to the substrate through the through-holes, respectively.

2. 发明授权

US09634240B2 Magnetic memory devices 有权
公开(公告)号：US09634240B2
公开(公告)日：2017-04-25
申请号：US14567932
申请日：2014-12-11
申请人： Jongchul Park , Byoungjae Bae , Shin-Jae Kang , Eunsun Noh , Kyung Rae Byun
发明人： Jongchul Park , Byoungjae Bae , Shin-Jae Kang , Eunsun Noh , Kyung Rae Byun
IPC分类号： H01L43/08 , H01L43/02 , H01L43/12 , H01L27/22
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228 , H01L43/02 , H01L43/12
摘要： Magnetic memory devices include a plurality of first magnetic patterns on a substrate so as to be spaced apart from each other, a first insulating pattern between the first magnetic patterns to define the first magnetic patterns, and a tunnel barrier layer covering the first magnetic patterns and the first insulating pattern. The first insulating pattern includes a first magnetic element, and the first magnetic element is the same as a second magnetic element constituting the first magnetic patterns.

3. 发明授权

US10115893B2 Data storage devices and methods for manufacturing the same 有权
公开(公告)号：US10115893B2
公开(公告)日：2018-10-30
申请号：US15606136
申请日：2017-05-26
申请人： Jongchul Park , Sang-Kuk Kim
发明人： Jongchul Park , Sang-Kuk Kim
IPC分类号： H01L27/22 , H01L43/02 , H01L43/08 , H01L43/12
摘要： A method of manufacturing a data storage device may include forming a magnetic tunnel junction layer on a substrate, irradiating a first ion beam on the magnetic tunnel junction layer to form magnetic tunnel junction patterns separated from each other, irradiating a second ion beam on the magnetic tunnel junction layer, and irradiating a third ion beam on the magnetic tunnel junction layer. The first ion beam may be irradiated at a first incident angle. The second ion beam may be irradiated at a second incident angle that may be smaller than the first incident angle. The third ion beam may be irradiated to form sidewall insulating patterns on sidewalls of the magnetic tunnel junction patterns based on re-depositing materials separated by the third ion beam on the sidewalls of the magnetic tunnel junction patterns.

4. 发明授权

US09502643B2 Semiconductor device, magnetic memory device, and method of fabricating the same 有权
标题翻译：半导体器件，磁存储器件及其制造方法
公开(公告)号：US09502643B2
公开(公告)日：2016-11-22
申请号：US14606157
申请日：2015-01-27
申请人： Byoungjae Bae , Jongchul Park , Shin Kwon , Inho Kim , Changwoo Sun
发明人： Byoungjae Bae , Jongchul Park , Shin Kwon , Inho Kim , Changwoo Sun
IPC分类号： H01L43/12 , H01L43/08 , H01L27/22
CPC分类号： H01L43/12 , H01L27/228 , H01L43/08
摘要： A method of fabricating a semiconductor device includes forming conductive pillars on a substrate, sequentially forming a sacrificial layer and a molding structure between the conductive pillars, forming a conductive layer on the molding structure, such that the conductive layer is connected to the conductive pillars, removing the sacrificial layer to form an air gap, removing the molding structure to form an expanded air gap, and patterning the conductive layer to open the expanded air gap.
摘要翻译：一种制造半导体器件的方法包括在衬底上形成导电柱，在导电柱之间依次形成牺牲层和模制结构，在模制结构上形成导电层，使得导电层连接到导电柱上，去除牺牲层以形成气隙，去除模制结构以形成扩张空气间隙，并且图案化导电层以打开膨胀的气隙。

5. 发明申请

US20140294345A1 OPTICAL COMPONENT ASSEMBLY FOR USE WITH AN OPTICAL DEVICE 有权
标题翻译：光学元件组件与光学器件一起使用
公开(公告)号：US20140294345A1
公开(公告)日：2014-10-02
申请号：US14306217
申请日：2014-06-16
申请人： Victor Il'ich Kopp , Jonathan Singer , Daniel Neugroschl , Jongchul Park , Mitchell S. Wlodawski
发明人： Victor Il'ich Kopp , Jonathan Singer , Daniel Neugroschl , Jongchul Park , Mitchell S. Wlodawski
IPC分类号： G02B6/28
CPC分类号： G02B6/30
摘要： The inventive optical component assembly advantageously enables a multi-waveguide optical component (such as the inventive optical fiber coupler array, a multi-core optical fiber, etc.), to be coupled to at least one waveguide of an optical device at a predefined coupling angle. The optical component assembly of the present invention comprises a multi-waveguide optical component with an output end, a prism having an input surface, an output surface, and an internal reflective surface with a predefined reflection angle, and a GRIN lens, positioned between the component output end and the prism input surface, along a longitudinal axis of the multi-waveguide optical component. In accordance with the present invention, the length of the GRIN lens, and its refractive index gradient profile are optimized to form an optical image of the output end of the multi-waveguide optical component, at the output surface of the prism, thus enabling the output surface of the prism to be coupled to at least one waveguide of an optical device, with the predefined reflection angle corresponding to the angle at which the multi-waveguide optical component may be coupled to the optical device.
摘要翻译：本发明的光学部件组件有利地使得多波导光学部件（例如本发明的光纤耦合器阵列，多芯光纤等）能够以预定的耦合耦合到光学器件的至少一个波导角度。本发明的光学部件组件包括具有输出端的多波导光学部件，具有输入表面的棱镜，输出表面和具有预定反射角的内部反射表面，以及位于分量输出端和棱镜输入表面沿着多波导光学部件的纵向轴线。根据本发明，GRIN透镜的长度及其折射率梯度分布被优化以在棱镜的输出表面上形成多波导光学部件的输出端的光学图像，因此能够所述棱镜的输出表面将被耦合到光学装置的至少一个波导，其中所述预定反射角度对应于所述多波导光学部件可耦合到所述光学装置的角度。

6. 发明授权

US08338254B2 Methods of manufacturing self aligned buried contact electrodes for vertical channel transistors 失效
标题翻译：制造用于垂直沟道晶体管的自对准埋入接触电极的方法
公开(公告)号：US08338254B2
公开(公告)日：2012-12-25
申请号：US13270835
申请日：2011-10-11
申请人： Jongchul Park , Jinyoung Kim , Sangsup Jeong
发明人： Jongchul Park , Jinyoung Kim , Sangsup Jeong
IPC分类号： H01L21/336
CPC分类号： H01L27/10876 , H01L21/823487
摘要： A semiconductor device including vertical field effect transistors may comprise a buried insulating film stacked on a semiconductor substrate and spaced apart first and second active regions vertically penetrating the buried insulating film. The active regions and the buried insulating film are covered with an interlayer insulating film. An upper interconnection is disposed in the interlayer insulating film. A gate electrode extends from a part of the upper interconnection into the buried insulating film between the first and second active regions. A protective film pattern is disposed to cover a top surface of the upper interconnection. First and second buried contact electrodes penetrating the interlayer insulating film to be in contact with top surfaces of the first and second active regions are provided. Related manufacturing methods are also described.
摘要翻译：包括垂直场效应晶体管的半导体器件可以包括堆叠在半导体衬底上的掩埋绝缘膜，并且垂直穿过埋入绝缘膜的间隔开的第一和第二有源区。有源区和掩埋绝缘膜被层间绝缘膜覆盖。上部互连布置在层间绝缘膜中。栅电极从上互连的一部分延伸到第一和第二有源区之间的掩埋绝缘膜。设置保护膜图案以覆盖上互连的顶表面。提供穿透层间绝缘膜以与第一和第二有源区域的顶表面接触的第一和第二埋入接触电极。还描述了相关的制造方法。

7. 发明申请

US20150194595A1 MAGNETIC MEMORY DEVICES 有权
标题翻译：磁记忆装置
公开(公告)号：US20150194595A1
公开(公告)日：2015-07-09
申请号：US14492419
申请日：2014-09-22
申请人： Jongchul Park , Hyungjoon Kwon , Joonkyu Rhee
发明人： Jongchul Park , Hyungjoon Kwon , Joonkyu Rhee
IPC分类号： H01L43/02 , H01L43/08
CPC分类号： H01L43/02 , H01L43/08 , H01L43/12
摘要： A magnetic memory device may include a lower electrode on a substrate, a memory element on the lower electrode, an upper electrode on the memory element, and a protection spacer enclosing a portion of a side surface of the lower electrode and protruding laterally from the side surface of the lower electrode. The protection spacer may have a bottom surface that is positioned at a level higher than that of a bottom surface of the lower electrode.
摘要翻译：磁存储器件可以包括衬底上的下电极，下电极上的存储元件，存储元件上的上电极，以及包围下电极的侧表面的一部分并从侧面侧向突出的保护间隔件下电极的表面。保护间隔件可以具有位于比下电极的底表面高的位置的底表面。

8. 发明申请

US20140024138A1 METHOD FOR ETCHING METAL LAYER AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
标题翻译：用于蚀刻金属层的方法和使用其制造半导体器件的方法
公开(公告)号：US20140024138A1
公开(公告)日：2014-01-23
申请号：US13941071
申请日：2013-07-12
申请人： Hyungjoon Kwon , Ken Tokashiki , Jongchul Park
发明人： Hyungjoon Kwon , Ken Tokashiki , Jongchul Park
IPC分类号： H01L21/3065 , H01L43/12
CPC分类号： H01L21/3065 , C23F4/00 , H01L21/32136 , H01L43/12
摘要： The inventive concepts disclosed herein include, for instance, methods for etching a metal layer and methods for manufacturing a semiconductor device using the etched metal layer. A wafer including a metal layer and a mask layer on the metal layer may be loaded into a process chamber. An etching gas may be supplied into the process chamber to etch the metal layer exposed by the mask layer. After the etching process, the mask layer may be removed. The etching gas can include phosphorus (P) and fluorine (F). An RF power may be constantly or selectively supplied to the process chamber, or different levels of RF power can be selectively supplied. An etching gas can be supplied to the process chamber when the RF power is off or at a lower level. A surface activation gas can be supplied when the RF power is on or at a higher level.
摘要翻译：本文公开的发明构思包括例如蚀刻金属层的方法和使用蚀刻金属层制造半导体器件的方法。在金属层上包括金属层和掩模层的晶片可以被加载到处理室中。可以将蚀刻气体供应到处理室中以蚀刻由掩模层暴露的金属层。在蚀刻工艺之后，可以去除掩模层。蚀刻气体可以包括磷（P）和氟（F）。 RF功率可以被恒定地或选择性地提供给处理室，或者可以选择性地提供不同级别的RF功率。当RF功率关闭或处于较低水平时，可将蚀刻气体供应到处理室。当RF功率开启或处于较高水平时，可以提供表面活化气体。

9. 发明授权

US08333947B2 Method of manufacturing carbon nanotubes 有权
标题翻译：制造碳纳米管的方法
公开(公告)号：US08333947B2
公开(公告)日：2012-12-18
申请号：US12534252
申请日：2009-08-03
申请人： Kazuchika Ohta , Ick-Soo Kim , Byoung-Suhk Kim , Jongchul Park
发明人： Kazuchika Ohta , Ick-Soo Kim , Byoung-Suhk Kim , Jongchul Park
IPC分类号： D01F9/12 , B01J19/08
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/15
摘要： A method for manufacturing carbon nanotubes includes the steps of: preparing metal-containing-nanofibers which include nanofibers made of organic polymer and metal which possesses a catalytic function in forming carbon nanotubes; and forming carbon nanotubes which contain metal therein by using the nanofibers as a carbon source, wherein the carbon nanotubes are formed by putting the metal-containing-nanofibers into a heating vessel which has a substance capable of converting electromagnetic energy into heat, and by heating the metal-containing-nanofibers using heat which is generated by the heating vessel when electromagnetic energy is applied to the heating vessel.
摘要翻译：制造碳纳米管的方法包括以下步骤：制备含有纳米纤维的纳米纤维，所述纳米纤维包括由有机聚合物制成的纳米纤维和在形成碳纳米管时具有催化功能的金属; 并且通过使用纳米纤维作为碳源形成含有金属的碳纳米管，其中，通过将含金属的纳米纤维放入具有能够将电磁能转化为热的物质的加热容器中，并且通过加热形成碳纳米管含有电子的纳米纤维，当电磁能被施加到加热容器时，使用由加热容器产生的热量。

10. 发明授权

US10403473B2 Ion beam etching devices 有权
公开(公告)号：US10403473B2
公开(公告)日：2019-09-03
申请号：US15198416
申请日：2016-06-30
申请人： Han-Na Cho , Jong-Kyu Kim , Hyuk Kim , Jongchul Park
发明人： Han-Na Cho , Jong-Kyu Kim , Hyuk Kim , Jongchul Park
IPC分类号： H01J37/32
摘要： An ion beam etching device comprises: an ion source configured to generate ions; a grid on a side of the ion source, the grid configured to accelerate the generated ions to generate an ion beam; a process chamber configured to have an etching process using the ion beam performed therein; and a variable magnetic field application part adjacent to the process chamber, the variable magnetic field application part configured to apply a variable magnetic field.

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