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    • 5. 发明授权
    • Memory device and memory system including the same
    • 存储器件和存储器系统包括相同的
    • US08924679B2
    • 2014-12-30
    • US13204937
    • 2011-08-08
    • Hyoung-Jun NaJae-Il Kim
    • Hyoung-Jun NaJae-Il Kim
    • G06F12/00G06F12/06G06F13/00G06F13/28
    • G06F12/00G06F12/0607G06F13/00G06F13/28G11C2207/107G11C2207/2281
    • A memory device includes a first bank group, a second bank group, where the first and second bank groups are each configured to output multi-bit data in parallel in response to a read command, a data transferor configured to receive the multi-bit data outputted in parallel from the first bank group or the second bank group and output the multi-bit data at a time interval corresponding to an operation mode, first global data buses configured to transfer the multi-bit data outputted from the first bank group to the data transferor, second global data buses configured to transfer the multi-bit data outputted from the second bank group to the data transferor, and a parallel-to-serial converter configured to convert the multi-bit data outputted from the data transferor into serial data according to the operation mode.
    • 存储器件包括第一组组,第二组组,其中第一组组和第二组组各自被配置为响应于读取命令并行输出多位数据;数据传送器,被配置为接收多位数据 从第一组组或第二组组并行输出,并以对应于操作模式的时间间隔输出多位数据,第一全局数据总线被配置为将从第一组组输出的多位数据传送到 数据传送器,被配置为将从第二组组输出的多位数据传送到数据传送器的第二全局数据总线;以及并行到串行转换器,其被配置为将从数据传送器输出的多位数据转换成串行数据 根据操作模式。
    • 7. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20100315157A1
    • 2010-12-16
    • US12494681
    • 2009-06-30
    • Hyoung-Jun NaKyung-Whan Kim
    • Hyoung-Jun NaKyung-Whan Kim
    • G05F3/02G05F1/10
    • G05F1/465G05F1/56
    • A semiconductor device is capable of generating an internal voltage having a voltage level that is dependent on an external power supply voltage. The semiconductor device includes an internal voltage generation unit configured to generate a plurality of internal voltages having different voltage levels by using an external power supply voltage, a voltage level detection unit configured to detect a voltage level of the external power supply voltage, and a selection unit configured to selectively output one of the internal voltages in response to a detection result of the voltage level detection unit.
    • 半导体器件能够产生具有取决于外部电源电压的电压电平的内部电压。 半导体器件包括:内部电压生成单元,被配置为通过使用外部电源电压生成具有不同电压电平的多个内部电压;电压电平检测单元,被配置为检测外部电源电压的电压电平;以及选择 单元,被配置为响应于电压电平检测单元的检测结果选择性地输出内部电压之一。
    • 8. 发明授权
    • Internal voltage generator
    • 内部电压发生器
    • US08922273B2
    • 2014-12-30
    • US12494681
    • 2009-06-30
    • Hyoung-Jun NaKyung-Whan Kim
    • Hyoung-Jun NaKyung-Whan Kim
    • G05F1/10G05F1/56
    • G05F1/465G05F1/56
    • A semiconductor device is capable of generating an internal voltage having a voltage level that is dependent on an external power supply voltage. The semiconductor device includes an internal voltage generation unit configured to generate a plurality of internal voltages having different voltage levels by using an external power supply voltage, a voltage level detection unit configured to detect a voltage level of the external power supply voltage, and a selection unit configured to selectively output one of the internal voltages in response to a detection result of the voltage level detection unit.
    • 半导体器件能够产生具有取决于外部电源电压的电压电平的内部电压。 半导体器件包括:内部电压生成单元,被配置为通过使用外部电源电压生成具有不同电压电平的多个内部电压;电压电平检测单元,被配置为检测外部电源电压的电压电平;以及选择 单元,被配置为响应于电压电平检测单元的检测结果选择性地输出内部电压之一。