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1. 发明授权

US08467896B2 Feedback for polishing rate correction in chemical mechanical polishing 有权
标题翻译：化学机械抛光抛光率校正的反馈
公开(公告)号：US08467896B2
公开(公告)日：2013-06-18
申请号：US13480434
申请日：2012-05-24
申请人： Jun Qian , Charles C. Garretson , Sivakumar Dhandapani , Jeffrey Drue David , Harry Q. Lee
发明人： Jun Qian , Charles C. Garretson , Sivakumar Dhandapani , Jeffrey Drue David , Harry Q. Lee
IPC分类号： G06F19/00 , B24B49/04 , B24B49/12
CPC分类号： B24B49/04 , B24B49/12
摘要： A substrate having a plurality of zones is polished and spectra are measured. For each zone, a first linear function fits a sequence of index values associated with reference spectra that best match the measured spectra. A projected time at which a reference zone will reach the target index value is determined based on the first linear function, and for at least one adjustable zone, a polishing parameter adjustment is calculated such that the adjustable zone has closer to the target index at the projected time than without such adjustment. The adjustment is calculated based on a feedback error calculated for a previous substrate. The feedback error for a subsequent substrate is calculated based on a second linear function that fits a sequence of index values associated with reference spectra that best match spectra measured after the polishing parameter is adjusted.
摘要翻译：研磨具有多个区域的基板并测量光谱。对于每个区域，第一个线性函数拟合与参考光谱相关联的索引值序列，该参考光谱与测量的光谱最匹配。基于第一线性函数确定参考区域将达到目标指标值的预计时间，并且对于至少一个可调整区域，计算抛光参数调整，使得可调节区域更接近目标索引处的目标索引预计时间比没有这样的调整。基于对先前基板计算的反馈误差来计算调整。基于适合与调整抛光参数之后测量的最佳匹配光谱的参考光谱相关联的索引值序列的第二线性函数来计算后续衬底的反馈误差。

2. 发明申请

US20130273812A1 FEEDBACK FOR POLISHING RATE CORRECTION IN CHEMICAL MECHANICAL POLISHING 有权
标题翻译：化学机械抛光抛光率校正反馈
公开(公告)号：US20130273812A1
公开(公告)日：2013-10-17
申请号：US13919144
申请日：2013-06-17
申请人： Jun Qian , Charles C. Garretson , Sivakumar Dhandapani , Jeffrey Drue David , Harry Q. Lee
发明人： Jun Qian , Charles C. Garretson , Sivakumar Dhandapani , Jeffrey Drue David , Harry Q. Lee
IPC分类号： B24B49/04
CPC分类号： B24B49/04 , B24B49/12
摘要： A substrate having a plurality of zones is polished and spectra are measured. For each zone, a first linear function fits a sequence of index values associated with reference spectra that best match the measured spectra. A projected time at which a reference zone will reach the target index value is determined based on the first linear function, and for at least one adjustable zone, a polishing parameter adjustment is calculated such that the adjustable zone has closer to the target index at the projected time than without such adjustment. The adjustment is calculated based on a feedback error calculated for a previous substrate. The feedback error for a subsequent substrate is calculated based on a second linear function that fits a sequence of index values associated with reference spectra that best match spectra measured after the polishing parameter is adjusted.
摘要翻译：研磨具有多个区域的基板并测量光谱。对于每个区域，第一个线性函数拟合与参考光谱相关联的索引值序列，该参考光谱与测量的光谱最匹配。基于第一线性函数确定参考区域将达到目标指标值的预计时间，并且对于至少一个可调整区域，计算抛光参数调整，使得可调节区域更接近目标索引处的目标索引预计时间比没有这样的调整。基于对先前基板计算的反馈误差来计算调整。基于适合与调整抛光参数之后测量的最佳匹配光谱的参考光谱相关联的索引值序列的第二线性函数来计算后续衬底的反馈误差。

3. 发明申请

US20120231701A1 FEEDBACK FOR POLISHING RATE CORRECTION IN CHEMICAL MECHANICAL POLISHING 有权
标题翻译：化学机械抛光抛光率校正反馈
公开(公告)号：US20120231701A1
公开(公告)日：2012-09-13
申请号：US13480434
申请日：2012-05-24
申请人： Jun Qian , Charles C. Garretson , Sivakumar Dhandapani , Jeffrey Drue David , Harry Q. Lee
发明人： Jun Qian , Charles C. Garretson , Sivakumar Dhandapani , Jeffrey Drue David , Harry Q. Lee
IPC分类号： B24B51/00
CPC分类号： B24B49/04 , B24B49/12
摘要： A substrate having a plurality of zones is polished and spectra are measured. For each zone, a first linear function fits a sequence of index values associated with reference spectra that best match the measured spectra. A projected time at which a reference zone will reach the target index value is determined based on the first linear function, and for at least one adjustable zone, a polishing parameter adjustment is calculated such that the adjustable zone has closer to the target index at the projected time than without such adjustment. The adjustment is calculated based on a feedback error calculated for a previous substrate. The feedback error for a subsequent substrate is calculated based on a second linear function that fits a sequence of index values associated with reference spectra that best match spectra measured after the polishing parameter is adjusted.
摘要翻译：研磨具有多个区域的基板并测量光谱。对于每个区域，第一个线性函数拟合与参考光谱相关联的索引值序列，该参考光谱与测量的光谱最匹配。基于第一线性函数确定参考区域将达到目标指标值的预计时间，并且对于至少一个可调整区域，计算抛光参数调整，使得可调节区域更接近目标索引处的目标索引预计时间比没有这样的调整。基于对先前基板计算的反馈误差来计算调整。基于适合与调整抛光参数之后测量的最佳匹配光谱的参考光谱相关联的索引值序列的第二线性函数来计算后续衬底的反馈误差。

4. 发明申请

US20110281501A1 FEEDBACK FOR POLISHING RATE CORRECTION IN CHEMICAL MECHANICAL POLISHING 有权
标题翻译：化学机械抛光抛光率校正反馈
公开(公告)号：US20110281501A1
公开(公告)日：2011-11-17
申请号：US12781644
申请日：2010-05-17
申请人： Jun Qian , Charles C. Garretson , Sivakumar Dhandapani , Jeffrey Drue David , Harry Q. Lee
发明人： Jun Qian , Charles C. Garretson , Sivakumar Dhandapani , Jeffrey Drue David , Harry Q. Lee
IPC分类号： B24B49/04 , B24B49/12
CPC分类号： B24B49/04 , B24B49/12
摘要： A substrate having a plurality of zones is polished and spectra are measured. For each zone, a first linear function fits a sequence of index values associated with reference spectra that best match the measured spectra. A projected time at which a reference zone will reach the target index value is determined based on the first linear function, and for at least one adjustable zone, a polishing parameter adjustment is calculated such that the adjustable zone has closer to the target index at the projected time than without such adjustment. The adjustment is calculated based on a feedback error calculated for a previous substrate. The feedback error for a subsequent substrate is calculated based on a second linear function that fits a sequence of index values associated with reference spectra that best match spectra measured after the polishing parameter is adjusted.
摘要翻译：研磨具有多个区域的基板并测量光谱。对于每个区域，第一个线性函数拟合与参考光谱相关联的索引值序列，该参考光谱与测量的光谱最匹配。基于第一线性函数确定参考区域将达到目标指标值的预计时间，并且对于至少一个可调整区域，计算抛光参数调整，使得可调节区域更接近目标索引处的目标索引预计时间比没有这样的调整。基于对先前基板计算的反馈误差来计算调整。基于适合与调整抛光参数之后测量的最佳匹配光谱的参考光谱相关联的索引值序列的第二线性函数来计算后续衬底的反馈误差。

5. 发明授权

US08190285B2 Feedback for polishing rate correction in chemical mechanical polishing 有权
标题翻译：化学机械抛光抛光率校正的反馈
公开(公告)号：US08190285B2
公开(公告)日：2012-05-29
申请号：US12781644
申请日：2010-05-17
申请人： Jun Qian , Charles C. Garretson , Sivakumar Dhandapani , Jeffrey Drue David , Harry Q Lee
发明人： Jun Qian , Charles C. Garretson , Sivakumar Dhandapani , Jeffrey Drue David , Harry Q Lee
IPC分类号： G06F19/00 , B24B49/04 , B24B49/12
CPC分类号： B24B49/04 , B24B49/12
摘要： A substrate having a plurality of zones is polished and spectra are measured. For each zone, a first linear function fits a sequence of index values associated with reference spectra that best match the measured spectra. A projected time at which a reference zone will reach the target index value is determined based on the first linear function, and for at least one adjustable zone, a polishing parameter adjustment is calculated such that the adjustable zone has closer to the target index at the projected time than without such adjustment. The adjustment is calculated based on a feedback error calculated for a previous substrate. The feedback error for a subsequent substrate is calculated based on a second linear function that fits a sequence of index values associated with reference spectra that best match spectra measured after the polishing parameter is adjusted.
摘要翻译：研磨具有多个区域的基板并测量光谱。对于每个区域，第一个线性函数拟合与参考光谱相关联的索引值序列，该参考光谱与测量的光谱最匹配。基于第一线性函数确定参考区域将达到目标指标值的预计时间，并且对于至少一个可调整区域，计算抛光参数调整，使得可调节区域更接近目标索引处的目标索引预计时间比没有这样的调整。基于对先前基板计算的反馈误差来计算调整。基于适合与调整抛光参数之后测量的最佳匹配光谱的参考光谱相关联的索引值序列的第二线性函数来计算后续衬底的反馈误差。

6. 发明申请

US20110256812A1 CLOSED-LOOP CONTROL FOR IMPROVED POLISHING PAD PROFILES 有权
标题翻译：用于改进抛光垫轮廓的闭环控制
公开(公告)号：US20110256812A1
公开(公告)日：2011-10-20
申请号：US13087180
申请日：2011-04-14
申请人： Sivakumar Dhandapani , Jun Qian , Christopher D. Cocca , Jason G. Fung , Shou-Sung Chang , Charles C. Garretson , Gregory E. Menk , Stan D. Tsai
发明人： Sivakumar Dhandapani , Jun Qian , Christopher D. Cocca , Jason G. Fung , Shou-Sung Chang , Charles C. Garretson , Gregory E. Menk , Stan D. Tsai
IPC分类号： B24B53/02
CPC分类号： B24B53/017 , B24B37/042
摘要： Embodiments described herein use closed-loop control (CLC) of conditioning sweep to enable uniform groove depth removal across the pad, throughout pad life. A sensor integrated into the conditioning arm enables the pad stack thickness to be monitored in-situ and in real time. Feedback from the thickness sensor is used to modify pad conditioner dwell times across the pad surface, correcting for drifts in the pad profile that may arise as the pad and disk age. Pad profile CLC enables uniform reduction in groove depth with continued conditioning, providing longer consumables lifetimes and reduced operating costs.
摘要翻译：本文描述的实施例使用调节扫描的闭环控制（CLC），以在整个衬垫寿命期间跨越焊盘实现均匀的凹槽深度去除。集成到调节臂中的传感器使得可以在现场和实时监测焊盘堆叠厚度。来自厚度传感器的反馈用于修改焊盘表面上的焊盘调节器停留时间，从而校正焊盘轮廓上随焊盘和磁盘寿命可能出现的漂移。焊盘轮廓CLC可以通过持续的调节来均匀地减小槽深度，提供更长的消耗品寿命和降低的操作成本。

7. 发明授权

US09138860B2 Closed-loop control for improved polishing pad profiles 有权
标题翻译：改善抛光垫轮廓的闭环控制
公开(公告)号：US09138860B2
公开(公告)日：2015-09-22
申请号：US13087180
申请日：2011-04-14
申请人： Sivakumar Dhandapani , Jun Qian , Christopher D. Cocca , Jason G. Fung , Shou-Sung Chang , Charles C. Garretson , Gregory E. Menk , Stan D. Tsai
发明人： Sivakumar Dhandapani , Jun Qian , Christopher D. Cocca , Jason G. Fung , Shou-Sung Chang , Charles C. Garretson , Gregory E. Menk , Stan D. Tsai
IPC分类号： B24B53/02 , B24B53/017 , B24B37/04
CPC分类号： B24B53/017 , B24B37/042
摘要： Embodiments described herein use closed-loop control (CLC) of conditioning sweep to enable uniform groove depth removal across the pad, throughout pad life. A sensor integrated into the conditioning arm enables the pad stack thickness to be monitored in-situ and in real time. Feedback from the thickness sensor is used to modify pad conditioner dwell times across the pad surface, correcting for drifts in the pad profile that may arise as the pad and disk age. Pad profile CLC enables uniform reduction in groove depth with continued conditioning, providing longer consumables lifetimes and reduced operating costs.
摘要翻译：本文描述的实施例使用调节扫描的闭环控制（CLC），以在整个衬垫寿命期间跨越焊盘实现均匀的凹槽深度去除。集成到调节臂中的传感器使得可以在现场和实时监测焊盘堆叠厚度。来自厚度传感器的反馈用于修改焊盘表面上的焊盘调节器停留时间，从而校正焊盘轮廓上随焊盘和磁盘寿命可能出现的漂移。焊盘轮廓CLC可以通过持续的调节来均匀地减小槽深度，提供更长的消耗品寿命和降低的操作成本。

8. 发明申请

US20090318060A1 CLOSED-LOOP CONTROL FOR EFFECTIVE PAD CONDITIONING 有权
标题翻译：闭环控制有效的PAD调节
公开(公告)号：US20090318060A1
公开(公告)日：2009-12-24
申请号：US12489132
申请日：2009-06-22
申请人： Sivakumar Dhandapani , Stan D. Tsai , Daxin Mao , Sameer Deshpande , Shou-Sung Chang , Gregory E. Menk , Charles C. Garretson , Jason Garcheung Fung , Christopher D. Cocca , Hung Chih Chen
发明人： Sivakumar Dhandapani , Stan D. Tsai , Daxin Mao , Sameer Deshpande , Shou-Sung Chang , Gregory E. Menk , Charles C. Garretson , Jason Garcheung Fung , Christopher D. Cocca , Hung Chih Chen
IPC分类号： B24B51/00 , B24B53/02
CPC分类号： B24B49/18 , B24B37/005 , B24B37/042
摘要： A method and apparatus for conditioning a polishing pad is provided. The conditioning element is held by a conditioning arm rotatably mounted to a base at a pivot point. An actuator pivots the arm about the pivot point. The conditioning element is urged against the surface of the polishing pad, and translated with respect to the polishing pad to remove material from the polishing pad and roughen its surface. The interaction of the abrasive conditioning surface with the polishing pad surface generates a frictional force. The frictional force may be monitored by monitoring the torque applied to the pivot point, and material removal controlled thereby. The conditioning time, down force, translation rate, or rotation of the conditioning pad may be adjusted based on the measured torque.
摘要翻译：提供了一种用于调理抛光垫的方法和装置。调节元件由可旋转地安装到枢轴点处的基座的调节臂保持。执行器绕枢轴点枢转臂。调理元件被推靠在抛光垫的表面上，并相对于抛光垫平移以从抛光垫移除材料并使其表面变粗糙。研磨调理表面与抛光垫表面的相互作用产生摩擦力。可以通过监视施加到枢转点的扭矩来监测摩擦力，并且由此控制材料移除。调节垫的调节时间，下压力，平移速率或旋转可以基于测量的扭矩来调节。

9. 发明申请

US20120100779A1 APPARATUS AND METHOD FOR COMPENSATION OF VARIABILITY IN CHEMICAL MECHANICAL POLISHING CONSUMABLES 有权
标题翻译：用于补偿化学机械抛光消耗品的可变性的装置和方法
公开(公告)号：US20120100779A1
公开(公告)日：2012-04-26
申请号：US13178126
申请日：2011-07-07
申请人： Sivakumar Dhandapani , Asheesh Jain , Charles C. Garretson , Gregory E. Menk , Stan D. Tsai
发明人： Sivakumar Dhandapani , Asheesh Jain , Charles C. Garretson , Gregory E. Menk , Stan D. Tsai
IPC分类号： B24B49/00
CPC分类号： B24B53/007 , B24B37/005
摘要： Apparatus and methods for conditioning a polishing pad in a CMP system are provided. In one embodiment, a method includes performing a pre-polish process including urging a conditioner disk against a polishing surface of a polishing pad disposed in a polishing station, moving the conditioner disk relative to the polishing pad in a sweep pattern across the polishing surface while monitoring a rotational force value required to move the conditioner disk relative to the polishing pad, determining a metric indicative of an interaction between the conditioner disk and the polishing surface from the rotational force value, adjusting a polishing recipe in response to the metric, and polishing one or more substrates using the adjusted polishing recipe.
摘要翻译：提供了用于调节CMP系统中抛光垫的装置和方法。在一个实施例中，一种方法包括执行预抛光过程，包括将调节盘推靠在抛光台上的抛光垫的抛光表面上，以相对抛光垫相对于抛光垫移动校准盘，穿过抛光表面，同时监测相对于抛光垫移动调节盘所需的旋转力值，从旋转力值确定指示调节盘和抛光表面之间的相互作用的度量，响应于度量调整抛光配方，以及抛光使用调整后的抛光配方的一个或多个基材。

10. 发明授权

US08337279B2 Closed-loop control for effective pad conditioning 有权
标题翻译：闭环控制有效的垫调节
公开(公告)号：US08337279B2
公开(公告)日：2012-12-25
申请号：US12489132
申请日：2009-06-22
申请人： Sivakumar Dhandapani , Stan D. Tsai , Daxin Mao , Sameer Deshpande , Shou-Sung Chang , Gregory E. Menk , Charles C. Garretson , Jason Garcheung Fung , Christopher D. Cocca , Hung Chih Chen
发明人： Sivakumar Dhandapani , Stan D. Tsai , Daxin Mao , Sameer Deshpande , Shou-Sung Chang , Gregory E. Menk , Charles C. Garretson , Jason Garcheung Fung , Christopher D. Cocca , Hung Chih Chen
IPC分类号： B24B1/00 , B24B49/00 , B24B51/00
CPC分类号： B24B49/18 , B24B37/005 , B24B37/042
摘要： A method and apparatus for conditioning a polishing pad is provided. The conditioning element is held by a conditioning arm rotatably mounted to a base at a pivot point. An actuator pivots the arm about the pivot point. The conditioning element is urged against the surface of the polishing pad, and translated with respect to the polishing pad to remove material from the polishing pad and roughen its surface. The interaction of the abrasive conditioning surface with the polishing pad surface generates a frictional force. The frictional force may be monitored by monitoring the torque applied to the pivot point, and material removal controlled thereby. The conditioning time, down force, translation rate, or rotation of the conditioning pad may be adjusted based on the measured torque.
摘要翻译：提供了一种用于调理抛光垫的方法和装置。调节元件由可旋转地安装到枢轴点处的基座的调节臂保持。执行器绕枢轴点枢转臂。调理元件被推靠在抛光垫的表面上，并相对于抛光垫平移以从抛光垫移除材料并使其表面变粗糙。研磨调理表面与抛光垫表面的相互作用产生摩擦力。可以通过监视施加到枢转点的扭矩来监测摩擦力，并且由此控制材料移除。调节垫的调节时间，下压力，平移速率或旋转可以基于测量的扭矩来调节。

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