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1. 发明授权

US08329554B2 Ultra thin bumped wafer with under-film 有权
标题翻译：带薄膜的超薄凸起晶圆
公开(公告)号：US08329554B2
公开(公告)日：2012-12-11
申请号：US12916758
申请日：2010-11-01
申请人： Junghoon Shin , Sangho Lee , Sungyoon Lee
发明人： Junghoon Shin , Sangho Lee , Sungyoon Lee
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/78 , H01L2224/16225 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2924/00011 , H01L2924/00014 , H01L2924/00 , H01L2224/0401
摘要： A method of making a semiconductor device includes forming an under-film layer over bumps disposed on a surface of a wafer to completely cover the bumps, and forming an adhesive layer over the under-film layer. The method further includes attaching a support layer over the adhesive layer, removing a portion of a back surface of the wafer, and removing the support layer to expose the adhesive layer that remains disposed over the under-film layer. The method further includes removing the adhesive layer to expose the under-film layer while the bumps remain completely covered by the under-film layer, and singulating the wafer to form a semiconductor die. The method further includes pressing the bumps into contact with a substrate while the under-film layer provides an underfill between the semiconductor die and the substrate.
摘要翻译：制造半导体器件的方法包括在设置在晶片表面上的凸起上形成底膜层，以完全覆盖凸块，并在底膜层上形成粘合剂层。所述方法还包括将粘合剂层附着在粘合剂层上，去除晶片后表面的一部分，以及去除支撑层以暴露保留设置在底膜层上的粘合剂层。该方法还包括去除粘合剂层以暴露底膜层，同时凸块保持完全被底膜层覆盖，并且单晶化晶片以形成半导体管芯。该方法进一步包括按压凸块与基底接触，同时底膜层在半导体管芯和衬底之间提供底部填充。

2. 发明授权

US08704366B2 Ultra thin bumped wafer with under-film 有权
标题翻译：带薄膜的超薄凸起晶圆
公开(公告)号：US08704366B2
公开(公告)日：2014-04-22
申请号：US12911592
申请日：2010-10-25
申请人： Junghoon Shin , Sangho Lee , Sungyoon Lee
发明人： Junghoon Shin , Sangho Lee , Sungyoon Lee
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/78 , H01L2224/16225 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2924/00011 , H01L2924/00014 , H01L2924/00 , H01L2224/0401
摘要： A semiconductor device includes a wafer and a dicing saw tape that is laminated to a back surface of the wafer. An active surface of the wafer is opposite the back surface of the wafer. The semiconductor device further includes a lamination tape disposed in contact with the wafer. The lamination tape includes an under-film layer contacting the active surface of the wafer. The lamination tape further includes an adhesive layer contacting the under-film layer.
摘要翻译：半导体器件包括层叠到晶片的背面的晶片和切割锯带。晶片的活性表面与晶片的背面相对。半导体器件还包括与晶片接触设置的层压带。层压带包括与晶片的活性表面接触的底膜层。层压带还包括与底膜层接触的粘合剂层。

3. 发明申请

US20110037172A1 Ultra Thin Bumped Wafer With Under-Film 有权
标题翻译：带薄膜的超薄冲压薄片
公开(公告)号：US20110037172A1
公开(公告)日：2011-02-17
申请号：US12911592
申请日：2010-10-25
申请人： Junghoon Shin , Sangho Lee , Sungyoon Lee
发明人： Junghoon Shin , Sangho Lee , Sungyoon Lee
IPC分类号： H01L23/498 , H01L23/00
CPC分类号： H01L21/78 , H01L2224/16225 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2924/00011 , H01L2924/00014 , H01L2924/00 , H01L2224/0401
摘要： A semiconductor device includes a wafer and a dicing saw tape that is laminated to a back surface of the wafer. An active surface of the wafer is opposite the back surface of the wafer. The semiconductor device further includes a lamination tape disposed in contact with the wafer. The lamination tape includes an under-film layer contacting the active surface of the wafer. The lamination tape further includes an adhesive layer contacting the under-film layer.
摘要翻译：半导体器件包括层叠到晶片的背面的晶片和切割锯带。晶片的活性表面与晶片的背面相对。半导体器件还包括与晶片接触设置的层压带。层压带包括与晶片的活性表面接触的底膜层。层压带还包括与底膜层接触的粘合剂层。

4. 发明授权

US07838391B2 Ultra thin bumped wafer with under-film 有权
标题翻译：带薄膜的超薄凸起晶圆
公开(公告)号：US07838391B2
公开(公告)日：2010-11-23
申请号：US11745045
申请日：2007-05-07
申请人： Junghoon Shin , Sangho Lee , Sungyoon Lee
发明人： Junghoon Shin , Sangho Lee , Sungyoon Lee
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/78 , H01L2224/16225 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2924/00011 , H01L2924/00014 , H01L2924/00 , H01L2224/0401
摘要： A semiconductor device begins with a wafer having a plurality of bumps formed on a surface of the wafer. An under-film layer is formed over the wafer to completely cover all portions of the bumps with the under-film layer. An adhesive layer is formed over the under-film layer. A support layer is attached over the adhesive layer. A back surface of the wafer undergoes grinding. The support layer provides structural support to the wafer. The support layer is removed to expose the adhesive layer. The adhesive layer is removed to expose the under-film layer. The wafer is singulated into semiconductor die. The semiconductor die is mounted to a substrate by applying force to a back surface of the semiconductor die to press the bumps through under-film layer to contact the substrate while the under-film layer provides an underfill between the semiconductor die and substrate.
摘要翻译：半导体器件开始于在晶片的表面上形成有多个凸块的晶片。在晶片之上形成底膜层，以完全覆盖具有底膜层的凸块的所有部分。在底膜层上形成粘合剂层。支撑层附着在粘合剂层上。晶片的后表面进行研磨。支撑层为晶片提供结构支撑。去除支撑层以暴露粘合剂层。去除粘合剂层以暴露底膜层。将晶片分成半导体芯片。通过向半导体管芯的背面施加力将半导体管芯安装到基板上，以通过底膜层将凸块按压以接触基板，同时底膜层在半导体管芯和基板之间提供底部填充。

5. 发明申请

US20110045637A1 Ultra Thin Bumped Wafer With Under-Film 有权
标题翻译：带薄膜的超薄冲压薄片
公开(公告)号：US20110045637A1
公开(公告)日：2011-02-24
申请号：US12916758
申请日：2010-11-01
申请人： Junghoon Shin , Sangho Lee , Sungyoon Lee
发明人： Junghoon Shin , Sangho Lee , Sungyoon Lee
IPC分类号： H01L21/78 , H01L21/50
CPC分类号： H01L21/78 , H01L2224/16225 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2924/00011 , H01L2924/00014 , H01L2924/00 , H01L2224/0401
摘要： A method of making a semiconductor device includes forming an under-film layer over bumps disposed on a surface of a wafer to completely cover the bumps, and forming an adhesive layer over the under-film layer. The method further includes attaching a support layer over the adhesive layer, removing a portion of a back surface of the wafer, and removing the support layer to expose the adhesive layer that remains disposed over the under-film layer. The method further includes removing the adhesive layer to expose the under-film layer while the bumps remain completely covered by the under-film layer, and singulating the wafer to form a semiconductor die. The method further includes pressing the bumps into contact with a substrate while the under-film layer provides an underfill between the semiconductor die and the substrate.
摘要翻译：制造半导体器件的方法包括在设置在晶片表面上的凸起上形成底膜层，以完全覆盖凸块，并在底膜层上形成粘合剂层。所述方法还包括将粘合剂层附着在粘合剂层上，去除晶片后表面的一部分，以及去除支撑层以暴露保留设置在底膜层上的粘合剂层。该方法还包括去除粘合剂层以暴露底膜层，同时凸块保持完全被底膜层覆盖，并且将晶片单片化以形成半导体管芯。该方法进一步包括按压凸块与基底接触，同时底膜层在半导体管芯和衬底之间提供底部填充。

6. 发明申请

US20080280422A1 Ultra Thin Bumped Wafer with Under-Film 有权
标题翻译：带薄膜的超薄冲击晶圆
公开(公告)号：US20080280422A1
公开(公告)日：2008-11-13
申请号：US11745045
申请日：2007-05-07
申请人： Junghoon Shin , Sangho Lee , Sungyoon Lee
发明人： Junghoon Shin , Sangho Lee , Sungyoon Lee
IPC分类号： H01L21/78
CPC分类号： H01L21/78 , H01L2224/16225 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2924/00011 , H01L2924/00014 , H01L2924/00 , H01L2224/0401
摘要： A system to support a die includes a substrate. A solder resist is disposed over the substrate. A first solder bump is disposed in the solder resist to provide electrical connectivity through the solder resist to the substrate. A second solder bump is formed over the solder resist to correspond with a peripheral edge or a corner of the die. The second solder bump provides standoff height physical support to the die.
摘要翻译：支撑模具的系统包括基板。在衬底上设置阻焊剂。第一焊料凸点设置在阻焊剂中以提供通过阻焊剂到衬底的电连接。在阻焊剂上形成第二焊料凸块，以对应于模具的周边边缘或拐角。第二个焊料凸块提供了对模具的支座高度物理支撑。

7. 发明授权

US08535822B2 Electrode assembly and secondary battery having the same 失效
公开(公告)号：US08535822B2
公开(公告)日：2013-09-17
申请号：US12456624
申请日：2009-06-19
申请人： Seungyeob Cha , Sangho Lee
发明人： Seungyeob Cha , Sangho Lee
IPC分类号： H01M4/00
CPC分类号： H01M2/1066
摘要： A secondary battery includes an electrode assembly, an open-topped can accommodating the electrode assembly, and a cap assembly sealing the can. The electrode assembly includes a positive electrode plate having a positive electrode coated portion and positive electrode non-coating portions, a negative electrode plate having a negative electrode coated portion and negative electrode non-coating portions, and a separator interposed between the positive and negative electrode plates and wound with the electrode plates. The positive electrode non-coating portion has a region where the height of the positive electrode non-coating potion is lower than that of the positive electrode coating portions.

8. 发明授权

US08178063B2 Fabrication method of zeolite honeycomb type catalyst for reducing nitrogen oxide 有权
标题翻译：用于还原氮氧化物的沸石蜂窝型催化剂的制备方法
公开(公告)号：US08178063B2
公开(公告)日：2012-05-15
申请号：US12863024
申请日：2008-12-24
申请人： Junseong Ahn , Bongjae Kim , Sangho Lee , Okyoun Kim , Seunghoon Oh
发明人： Junseong Ahn , Bongjae Kim , Sangho Lee , Okyoun Kim , Seunghoon Oh
IPC分类号： B01D53/56 , B01D53/94 , C01B39/00
CPC分类号： B01J37/0009 , B01D53/8628 , B01D2251/206 , B01D2255/50 , B01D2255/9207 , B01D2257/402 , B01J29/06 , B01J29/064 , B01J29/076 , B01J29/40 , B01J35/04 , B01J2229/42 , C04B35/18 , C04B38/0006 , C04B2111/00129 , C04B2111/00793 , C04B2111/0081 , F01N3/0222 , Y02C20/10 , Y02T10/20
摘要： The present invention relates to conversion of exhaust gas containing nitrogen oxide (NOx) such as NO, NO2 and N2O into N2 and H2O through catalytic reaction with injection of a reducing agent such as ammonia and urea. A fabrication method of zeolite honeycomb type catalyst for reducing nitrogen oxide of the present invention includes: (a) obtaining an inorganic binder by mixing and uniformly peptizing pseudo-boehmite, distilled water and a pH adjuster; (b) obtaining a paste by mixing and kneading zeolite, the inorganic binder, an organic binder and distilled water; (c) extruding the paste into an extrudate having a through pore of a regular structure; and (d) drying and heat treating the extrudate.
摘要翻译：本发明涉及通过催化反应将含有NO，NO 2和N 2 O的氮氧化物（NO x）如NO，NO 2和N 2 O的废气转化成N 2和H 2 O，注入还原剂如氨和尿素。本发明的用于还原氮氧化物的沸石蜂窝型催化剂的制造方法包括：（a）通过混合并均匀地将假勃姆石，蒸馏水和pH调节剂胶溶得到无机粘合剂; （b）通过混合和捏合沸石，无机粘合剂，有机粘合剂和蒸馏水来获得糊料; （c）将糊料挤出到具有规则结构的通孔的挤出物中; 和（d）干燥和热处理挤出物。

9. 发明授权

US08386799B2 Methods and apparatuses for providing DRM interoperability 有权
标题翻译：提供DRM互操作性的方法和设备
公开(公告)号：US08386799B2
公开(公告)日：2013-02-26
申请号：US12630646
申请日：2009-12-03
申请人： Jong Kim , Sangho Lee , Heejin Park
发明人： Jong Kim , Sangho Lee , Heejin Park
IPC分类号： G06F21/00
CPC分类号： G06F21/10 , G06F2221/0728
摘要： Methods and apparatuses for providing DRM interoperability are provided. Proxy re-encryption technique using bilinear map is used, and the same content can be used in different devices. According to the method of providing DRM interoperability includes in proxy agent with respect to digital rights management (DRM) service providers and device which supports predetermined DRM, first DRM service provider, second DRM service provider, the proxy agent, and the device identify each other, and proxy re-encrypt an interoperable content (IC) and provide the IC to the device. The IC is second-level encrypted by using a key of the first DRM service provider, and the proxy re-encryption is performed by using a proxy key generated from proxy key information provided from the first DRM service provider and the second DRM service provider. Therefore, a problem in which interoperability cannot be guaranteed since a DRM technique depends on a service provider is resolved.
摘要翻译：提供了提供DRM互操作性的方法和设备。使用双线性映射的代理重新加密技术，相同的内容可以在不同的设备中使用。根据提供DRM互操作性的方法，其包括关于数字权限管理（DRM）服务提供商的代理代理和支持预定DRM的设备，第一DRM服务提供商，第二DRM服务提供商，代理代理和设备彼此识别，并且代理重新加密可互操作的内容（IC）并将IC提供给设备。 IC通过使用第一DRM服务提供商的密钥进行二级加密，并且通过使用从第一DRM服务提供商和第二DRM服务提供商提供的代理密钥信息生成的代理密钥来执行代理重新加密。因此，解决了DRM技术取决于服务提供商的互操作性不能保证的问题。

10. 外观设计

USD637415S1 Chair 有权
公开(公告)号：USD637415S1
公开(公告)日：2011-05-10
申请号：US29363025
申请日：2010-06-03
申请人： Sangho Lee
设计人： Sangho Lee

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