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1. 发明申请

US20130064491A1 OPTICAL MODULATOR 有权
标题翻译：光学调制器
公开(公告)号：US20130064491A1
公开(公告)日：2013-03-14
申请号：US13582841
申请日：2011-03-01
申请人： Junichi Fujikata , Motofumi Saitoh , Jun Ushida , Akio Toda
发明人： Junichi Fujikata , Motofumi Saitoh , Jun Ushida , Akio Toda
IPC分类号： G02F1/035 , H01L21/02
CPC分类号： G02F1/035 , G02F1/025 , H01L21/02
摘要： To provide an optical modulator having a reduced size and reduced power consumption and capable of being easily connected to a waveguide and a method of manufacturing the optical modulator. The optical modulator has at least semiconductor layer (8) having a rib-shaped portion and doped so as to be of a first conduction type, dielectric layer (11) laid on first-conduction-type semiconductor layer (8), and semiconductor layer (9) laid on dielectric layer (11), having the width at the side opposite from dielectric layer (11) increased relative to the width of the rib-shaped portion, and doped so as to be of a second conduction type.
摘要翻译：提供具有减小的尺寸和降低的功率消耗并且能够容易地连接到波导的光学调制器和制造光学调制器的方法。光调制器至少具有肋状部分并掺杂成第一导电类型的半导体层（8），布置在第一导电型半导体层（8）上的电介质层（11）和半导体层放置在电介质层（11）上的与介电层（11）相对的宽度相对于肋状部分的宽度增加并且掺杂成第二导电类型的放电层（9）。

2. 发明授权

US09002144B2 Electro-optical modulator 有权
标题翻译：电光调制器
公开(公告)号：US09002144B2
公开(公告)日：2015-04-07
申请号：US13395329
申请日：2010-06-08
申请人： Junichi Fujikata , Jun Ushida , Akio Toda , Motofumi Saitoh
发明人： Junichi Fujikata , Jun Ushida , Akio Toda , Motofumi Saitoh
IPC分类号： G02F1/035 , G02F1/225 , G02F1/025 , G02F1/015
CPC分类号： G02F1/2257 , G02F1/025 , G02F2001/0152 , G02F2201/066 , G02F2201/07 , G02F2202/105
摘要： A downsized, low-power electro-optical modulator that achieves reducing both of the additional resistance in the modulation portion and the optical loss each caused by electrodes at the same time is provided. The electro-optical modulator includes a rib waveguide formed by stacking a second semiconductor layer 9 having a different conductivity type from a first semiconductor layer 8 on the first semiconductor layer 8 via a dielectric film 11, and the semiconductor layers 8 and 9 are connectable to an external terminal via highly-doped portions 4 and 10, respectively. In a region in the vicinity of contact surfaces of the semiconductor layers 8 and 9 with the dielectric film 11, a free carrier is accumulated, removed, or inverted by an electrical signal from the external terminal, and whereby a concentration of the free carrier in an electric field region of an optical signal is modulated, so that a phase of the optical signal can be modulated. At least one of the semiconductor layers 8 and 9 is wider than the stacked portion. At least one of the highly-doped portions 4 and 10 is formed outside the stacked portion.
摘要翻译：提供了一种小型化的低功率电光调制器，其实现了减少调制部分中的附加电阻和由电极同时引起的光损耗。电光调制器包括通过电介质膜层叠具有与第一半导体层8上的第一半导体层8不同的导电类型的第二半导体层9形成的肋波导，并且半导体层8和9可连接到分别经由高掺杂部分4和10的外部端子。在具有电介质膜11的半导体层8和9的接触表面附近的区域中，通过来自外部端子的电信号累积，去除或反转自由载流子，并且由此使自由载流子的浓度调制光信号的电场区域，使得可以调制光信号的相位。半导体层8和9中的至少一个比层叠部分宽。高度掺杂部分4和10中的至少一个形成在堆叠部分的外部。

3. 发明授权

US08483520B2 Optical modulation structure and optical modulator 有权
标题翻译：光调制结构和光调制器
公开(公告)号：US08483520B2
公开(公告)日：2013-07-09
申请号：US13202680
申请日：2010-02-18
申请人： Junichi Fujikata , Jun Ushida , Akio Toda , Motofumi Saitoh
发明人： Junichi Fujikata , Jun Ushida , Akio Toda , Motofumi Saitoh
IPC分类号： G02F1/025
CPC分类号： G02F1/025
摘要： An optical modulation structure includes a lower cladding layer (102), a first silicon layer (103) integrally formed from silicon of a first conductivity type on the lower cladding layer (102) while including a core (104) and slab regions (105) arranged on both sides of the core (104) and connected to the core, a concave portion (104a) formed in an upper surface of the core (104), and a second silicon layer (109) of a second conductivity type formed on a dielectric layer (108) in the concave portion (104a) so as to fill the concave portion (104a).
摘要翻译：光调制结构包括下包层（102），在下包层（102）上由第一导电类型的硅整体形成的第一硅层（103），同时包括芯（104）和板区（105）布置在芯体（104）的两侧并连接到芯部，形成在芯部（104）的上表面中的凹部（104a）和形成在芯体（104）上的第二导电类型的第二硅层（109）在凹部（104a）中的介电层（108），以填充凹部（104a）。

4. 发明授权

US08873895B2 Optical modulator 有权
标题翻译：光调制器
公开(公告)号：US08873895B2
公开(公告)日：2014-10-28
申请号：US13582841
申请日：2011-03-01
申请人： Junichi Fujikata , Motofumi Saitoh , Jun Ushida , Akio Toda
发明人： Junichi Fujikata , Motofumi Saitoh , Jun Ushida , Akio Toda
IPC分类号： G02F1/035 , H01L21/02
CPC分类号： G02F1/035 , G02F1/025 , H01L21/02
摘要： To provide an optical modulator having a reduced size and reduced power consumption and capable of being easily connected to a waveguide and a method of manufacturing the optical modulator. The optical modulator has at least semiconductor layer (8) having a rib-shaped portion and doped so as to be of a first conduction type, dielectric layer (11) laid on first-conduction-type semiconductor layer (8), and semiconductor layer (9) laid on dielectric layer (11), having the width at the side opposite from dielectric layer (11) increased relative to the width of the rib-shaped portion, and doped so as to be of a second conduction type.
摘要翻译：提供具有减小的尺寸和降低的功率消耗并且能够容易地连接到波导的光学调制器和制造光学调制器的方法。光调制器至少具有肋状部分并掺杂成第一导电类型的半导体层（8），布置在第一导电型半导体层（8）上的电介质层（11）和半导体层放置在电介质层（11）上的与介电层（11）相对的宽度相对于肋状部分的宽度增加并且掺杂成第二导电类型的放电层（9）。

5. 发明申请

US20120257850A1 ELECTRO-OPTICAL MODULATOR 有权
标题翻译：电光调制器
公开(公告)号：US20120257850A1
公开(公告)日：2012-10-11
申请号：US13395329
申请日：2010-06-08
申请人： Junichi Fujikata , Jun Ushida , Akio Toda , Motofumi Saitoh
发明人： Junichi Fujikata , Jun Ushida , Akio Toda , Motofumi Saitoh
IPC分类号： G02F1/035
CPC分类号： G02F1/2257 , G02F1/025 , G02F2001/0152 , G02F2201/066 , G02F2201/07 , G02F2202/105
摘要： A downsized, low-power electro-optical modulator that achieves reducing both of the additional resistance in the modulation portion and the optical loss each caused by electrodes at the same time is provided. The electro-optical modulator includes a rib waveguide formed by stacking a second semiconductor layer 9 having a different conductivity type from a first semiconductor layer 8 on the first semiconductor layer 8 via a dielectric film 11, and the semiconductor layers 8 and 9 are connectable to an external terminal via highly-doped portions 4 and 10, respectively. In a region in the vicinity of contact surfaces of the semiconductor layers 8 and 9 with the dielectric film 11, a free carrier is accumulated, removed, or inverted by an electrical signal from the external terminal, and whereby a concentration of the free carrier in an electric field region of an optical signal is modulated, so that a phase of the optical signal can be modulated. At least one of the semiconductor layers 8 and 9 is wider than the stacked portion. At least one of the highly-doped portions 4 and 10 is formed outside the stacked portion.
摘要翻译：提供了一种小型化的低功率电光调制器，其实现了减少调制部分中的附加电阻和由电极同时引起的光损耗。电光调制器包括通过电介质膜层叠具有与第一半导体层8上的第一半导体层8不同的导电类型的第二半导体层9形成的肋波导，并且半导体层8和9可连接到分别经由高掺杂部分4和10的外部端子。在具有电介质膜11的半导体层8和9的接触表面附近的区域中，通过来自外部端子的电信号累积，去除或反转自由载流子，并且由此使自由载流子的浓度调制光信号的电场区域，使得可以调制光信号的相位。半导体层8和9中的至少一个比层叠部分宽。高度掺杂部分4和10中的至少一个形成在堆叠部分的外部。

6. 发明申请

US20110311178A1 OPTICAL MODULATION STRUCTURE AND OPTICAL MODULATOR 有权
标题翻译：光学调制结构和光学调制器
公开(公告)号：US20110311178A1
公开(公告)日：2011-12-22
申请号：US13202680
申请日：2010-02-18
申请人： Junichi Fujikata , Jun Ushida , Akio Toda , Motofumi Saitoh
发明人： Junichi Fujikata , Jun Ushida , Akio Toda , Motofumi Saitoh
IPC分类号： G02F1/025
CPC分类号： G02F1/025
摘要： The components are a lower clad layer (102), a first silicon layer (103) that is formed on the lower clad layer (102) as a single body made of silicon of a first conduction type and has a slab region (105) that is disposed at a core (104) and on both sides of the core (104) and connects to the core, a concave section (104a) that is formed in the top surface of the core (104), and a second silicon layer (109) of a second conduction type that is formed inside the concave section (104a) with an intervening dielectric layer (108) to fill the inside of the concave section (104a).
摘要翻译：这些部件是下包层（102），第一硅层（103），其形成在下包层（102）上，作为由第一导电类型的硅制成的单体，并具有板区域（105）设置在芯部（104）处并且在芯部（104）的两侧并且连接到芯部，形成在芯部（104）的顶表面中的凹部（104a）和第二硅层（ 109），其形成在所述凹部（104a）的内部，并具有填充所述凹部（104a）的内部的中间介电层（108）。

7. 发明授权

US08936962B2 Optical modulator and method for manufacturing same 有权
标题翻译：光学调制器及其制造方法
公开(公告)号：US08936962B2
公开(公告)日：2015-01-20
申请号：US13256087
申请日：2010-02-15
申请人： Junichi Fujikata , Toshio Baba , Jun Ushida
发明人： Junichi Fujikata , Toshio Baba , Jun Ushida
IPC分类号： H01L27/15 , G02F1/025 , G02F1/225
CPC分类号： G02F1/025 , G02F1/2257
摘要： An optical modulator according to the present invention is configured at least by a semiconductor layer subjected to a doping process so as to exhibit a first conductivity type, and a semiconductor layer subjected to a doping process so as to exhibit a second conductivity type. Further, in the optical modulator, at least the first conductivity type semiconductor layer, a dielectric layer, the second conductivity type semiconductor layer, and a transparent electrode optically transparent in at least a near-infrared wavelength region are laminated in order.
摘要翻译：根据本发明的光调制器至少由经受掺杂工艺的半导体层构成以呈现第一导电类型，以及经受掺杂工艺以显示第二导电类型的半导体层。此外，在光调制器中，依次层叠至少第一导电型半导体层，电介质层，第二导电型半导体层和在至少近红外波长区域中透光的透明电极。

8. 发明授权

US08363989B2 Semiconductor optical interconnection device and semiconductor optical interconnection method 有权
标题翻译：半导体光互连器件和半导体光互连方法
公开(公告)号：US08363989B2
公开(公告)日：2013-01-29
申请号：US12919461
申请日：2009-02-10
申请人： Daisuke Okamoto , Kenichi Nishi , Junichi Fujikata , Jun Ushida
发明人： Daisuke Okamoto , Kenichi Nishi , Junichi Fujikata , Jun Ushida
IPC分类号： G02B6/12 , H01L21/02
CPC分类号： H01L25/0657 , H01L23/48 , H01L23/645 , H01L24/13 , H01L24/16 , H01L24/48 , H01L25/167 , H01L2224/13099 , H01L2224/16145 , H01L2224/48095 , H01L2224/48227 , H01L2224/73207 , H01L2225/0651 , H01L2225/06513 , H01L2225/06531 , H01L2225/06534 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01023 , H01L2924/01033 , H01L2924/19041 , H01L2924/19042 , H01L2924/30105 , H01L2924/30107 , Y10T29/41 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： Provided is a semiconductor optical interconnection device capable of transmitting signals between laminated semiconductor chips in a structure where semiconductor chips highly functionalized by being bonded to an optical interconnection chip are laminated. The semiconductor optical interconnection device includes a semiconductor chip 1 and an optical interconnection chip 2. The optical interconnection chip 2 includes an optical element formed thereon (for instance, a photo-sensitive element, a luminous element, or an optical modulator) which has a function relating to signal conversion between light and electricity. The semiconductor chip 1 includes a transmission section 3 (for instance, a coil or an inductor) to transmit signals in a non-contact manner, and a connection section 4 (for instance, a bump) to electrically connect with the optical element.
摘要翻译：提供一种半导体光互连装置，其能够在层叠半导体芯片之间的层叠半导体芯片之间传输信号，其结构是通过层叠了通过结合到光互连芯片而被高度功能化的半导体芯片。半导体光互连装置包括半导体芯片1和光互连芯片2.光互连芯片2包括形成在其上的光学元件（例如，光敏元件，发光元件或光调制器），其具有功能与光和电之间的信号转换有关。半导体芯片1包括以非接触方式传输信号的传输部分3（例如，线圈或电感器）以及与光学元件电连接的连接部分4（例如，凸块）。

9. 发明申请

US20100320496A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100320496A1
公开(公告)日：2010-12-23
申请号：US12919546
申请日：2009-02-26
申请人： Kenichi Nishi , Junichi Fujikata , Jun Ushida , Daisuke Okamoto
发明人： Kenichi Nishi , Junichi Fujikata , Jun Ushida , Daisuke Okamoto
IPC分类号： H01L33/62
CPC分类号： G02B6/12002 , G02B6/43 , H01L21/76898 , H01L23/481 , H01L2224/05 , H01L2224/0557 , H01L2224/05571 , H01L2224/08145 , H01L2224/80001 , H01L2224/80357 , H01L2224/80895 , H01L2224/80896 , H01L2924/0002 , H01L2924/12044 , H01L2924/00014 , H01L2924/00012 , H01L2224/05552
摘要： A semiconductor device comprises a semiconductor layer having a semiconductor integrated circuit, which is for processing an electrical signal, on a semiconductor substrate and an optical interconnect layer for transmitting an optical signal are joined. Control of modulation of the optical signal transmitted in the optical interconnect layer is performed by an electrical signal from the semiconductor layer, and an electrical signal generated by reception of light in the optical interconnect layer is transmitted to the semiconductor layer. The optical interconnect layer is disposed on the underside of the semiconductor substrate.
摘要翻译：半导体器件包括具有用于处理电信号的半导体集成电路的半导体层，半导体衬底和用于发射光信号的光互连层的半导体层。通过来自半导体层的电信号执行在光学互连层中发送的光信号的调制的控制，并且通过在光学互连层中的光的接收而产生的电信号被传输到半导体层。光学互连层设置在半导体衬底的下侧。

10. 发明授权

US08467637B2 Waveguide path coupling-type photodiode 有权
标题翻译：波导路耦合型光电二极管
公开(公告)号：US08467637B2
公开(公告)日：2013-06-18
申请号：US12598162
申请日：2008-04-30
申请人： Junichi Fujikata , Jun Ushida , Daisuke Okamoto , Kenichi Nishi , Keishi Ohashi , Tai Tsuchizawa , Seiichi Itabashi
发明人： Junichi Fujikata , Jun Ushida , Daisuke Okamoto , Kenichi Nishi , Keishi Ohashi , Tai Tsuchizawa , Seiichi Itabashi
IPC分类号： G02B6/12 , G02B6/26 , H01L29/47
CPC分类号： H01L31/022408 , B82Y20/00 , G02B6/1226 , G02B6/4204 , G02B6/4214 , H01L31/02325
摘要： In a waveguide path coupling-type photodiode, a semiconductor light absorbing layer and an optical waveguide path core are adjacently arranged. An electrode formed of at least one layer is installed in a boundary part of the semiconductor light absorbing layer and the optical waveguide path core. The electrodes are arranged at an interval of (1/100)λ to λ [λ: wavelength of light transmitted through optical waveguide path core]. At least a part of the electrodes is embedded in the semiconductor light absorbing layer. Embedding depth from a surface of the semiconductor light absorbing layer is a value not more than λ/(2 ns) [ns: refractive index of semiconductor light absorbing layer]. At least one layer of the electrode is constituted of a material which can surface plasmon-induced.
摘要翻译：在波导路耦合型光电二极管中，相邻地配置有半导体光吸收层和光波导路径芯。由至少一层形成的电极安装在半导体光吸收层和光波导路径芯的边界部分。电极以（1/100）λ到λλ通过光波导路径芯透射的光的波长的间隔排列。至少一部分电极嵌入在半导体光吸收层中。从半导体光吸收层的表面嵌入深度是不大于λ/（2ns）[ns：半导体光吸收层的折射率]的值。至少一层电极由可以表面等离子体激发的材料构成。

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