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1. 发明授权

US11303214B2 Power conversion device and power supply device 有权
公开(公告)号：US11303214B2
公开(公告)日：2022-04-12
申请号：US17014893
申请日：2020-09-08
申请人： Kabushiki Kaisha Toshiba
发明人： Yusuke Hayashi , Kazuto Takao
IPC分类号： H02M3/335 , H02M1/08 , H02M1/00
摘要： A power conversion device includes a first switching element and a first inductor connected in series between a first terminal and a second terminal, the first inductor and a second switching element being connected in series between the second and third terminals, a switching controller that alternately turns on and off the first and second switching elements, a first capacitor connected between the first and second terminals, and a second capacitor connected between the second and third terminals. When a first full-wave rectified voltage is input, switching frequencies of the first switching element and the second switching element, an inductance of the first inductor, a capacitance of the first capacitor, and a capacitance of the second capacitor are set so that a second full-wave rectified voltage having a voltage amplitude and a phase same as the voltage amplitude and the phase of the first full-wave rectified voltage is output.

2. 发明授权

US10778216B2 Control circuit, semiconductor device, and electrical circuit device 有权
公开(公告)号：US10778216B2
公开(公告)日：2020-09-15
申请号：US16565705
申请日：2019-09-10
申请人： KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
发明人： Tatsunori Sakano , Kazuto Takao
IPC分类号： H03K17/567 , H01L29/739 , H01L27/07 , H02M1/00 , H02P27/08 , H02M7/5387
摘要： According to one embodiment, a control circuit is connected to an element portion including a first element. The first element is an RC-IGBT. The first element includes a first gate, a first other gate, a first collector, and a first emitter. The control circuit performs a first operation and a second operation. In at least a portion of the first operation, the control circuit causes a first current to flow from the first collector toward the first emitter. In at least a portion of the second operation, the control circuit causes a second current to flow from the first emitter toward the first collector. In the second operation, the control circuit supplies a first pulse to the first gate and supplies a first other pulse to the first other gate. The first pulse has a first start time and a first end time.

3. 发明授权

US09564802B2 Electric power conversion device 有权
标题翻译：电力转换装置
公开(公告)号：US09564802B2
公开(公告)日：2017-02-07
申请号：US14478445
申请日：2014-09-05
申请人： Kabushiki Kaisha Toshiba
发明人： Kazuto Takao , Takashi Shinohe
IPC分类号： H02M7/537 , H02M3/155 , H02M1/44 , H02M7/5387
CPC分类号： H02M3/155 , H02M1/44 , H02M7/5387 , H02M2003/1555 , Y02B70/1441
摘要： An electric power conversion device of an embodiment includes the electric power conversion device expressed as an equivalent circuit including, a power supply, a first parasitic inductance, a first diode; a second parasitic inductance connected to the first diode in series, a second diode connected to the first diode in parallel, a third parasitic inductance connected to the second diode in series, a switching element, a gate circuit, and a load. The equivalent circuit includes a first circuit loop and a second circuit loop. The first circuit loop includes the power supply, the first parasitic inductance, the first diode, the second parasitic inductance, the switching element, and the gate circuit. The second circuit loop includes the power supply, the first parasitic inductance, the second diode, the third parasitic inductance, the switching element, and the gate circuit.
摘要翻译：一个实施例的电力转换装置包括表示为等效电路的电力转换装置，包括电源，第一寄生电感，第一二极管; 串联连接到第一二极管的第二寄生电感，并联连接到第一二极管的第二二极管，串联连接到第二二极管的第三寄生电感，开关元件，门电路和负载。等效电路包括第一电路回路和第二回路回路。第一电路回路包括电源，第一寄生电感，第一二极管，第二寄生电感，开关元件和门电路。第二电路回路包括电源，第一寄生电感，第二二极管，第三寄生电感，开关元件和门电路。

4. 发明授权

US09419517B2 Electric power conversion device 有权
公开(公告)号：US09419517B2
公开(公告)日：2016-08-16
申请号：US14478445
申请日：2014-09-05
申请人： Kabushiki Kaisha Toshiba
发明人： Kazuto Takao , Takashi Shinohe
IPC分类号： H02M7/537 , H02M3/155 , H02M1/44 , H02M7/5387
摘要： An electric power conversion device of an embodiment includes the electric power conversion device expressed as an equivalent circuit including, a power supply, a first parasitic inductance, a first diode; a second parasitic inductance connected to the first diode in series, a second diode connected to the first diode in parallel, a third parasitic inductance connected to the second diode in series, a switching element, a gate circuit, and a load. The equivalent circuit includes a first circuit loop and a second circuit loop. The first circuit loop includes the power supply, the first parasitic inductance, the first diode, the second parasitic inductance, the switching element, and the gate circuit. The second circuit loop includes the power supply, the first parasitic inductance, the second diode, the third parasitic inductance, the switching element, and the gate circuit.

5. 发明申请

US20150263000A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20150263000A1
公开(公告)日：2015-09-17
申请号：US14465583
申请日：2014-08-21
申请人： Kabushiki Kaisha Toshiba
发明人： Hiroshi Kono , Kazuto Takao
IPC分类号： H01L27/07 , H01L49/02 , H01L29/78
CPC分类号： H01L27/0733 , H01L28/60 , H01L29/42372 , H01L29/7803
摘要： According to one embodiment, semiconductor device includes: a first semiconductor region of a first conductive type; a second semiconductor region of a second conductive type provided on the first semiconductor region; a third semiconductor region of the first conductive type provided on the second semiconductor region, the third semiconductor region having a higher impurity concentration than the impurity concentration of the first semiconductor region; a third electrode in contact with the third semiconductor region, the second semiconductor region, and the first semiconductor region via a first dielectric film; and a capacitance element unit having a fourth electrode provided above the second semiconductor region, a fifth electrode provided above the fourth electrode, and a second dielectric film provided between the fourth electrode and the fifth electrode.
摘要翻译：根据一个实施例，半导体器件包括：第一导电类型的第一半导体区域; 设置在第一半导体区域上的第二导电类型的第二半导体区域; 设置在所述第二半导体区域上的所述第一导电类型的第三半导体区域，所述第三半导体区域的杂质浓度高于所述第一半导体区域的杂质浓度; 经由第一电介质膜与第三半导体区域，第二半导体区域和第一半导体区域接触的第三电极; 以及具有设置在第二半导体区域上方的第四电极的电容元件单元，设置在第四电极上方的第五电极和设置在第四电极和第五电极之间的第二电介质膜。

6. 发明授权

US10938388B2 Control circuit, semiconductor device, and electrical circuit device 有权
公开(公告)号：US10938388B2
公开(公告)日：2021-03-02
申请号：US16558537
申请日：2019-09-03
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Tatsunori Sakano , Kazuto Takao
IPC分类号： H03K17/60 , H03K17/567 , H01L29/739 , H03K17/66
摘要： According to one embodiment, a control circuit is connected to an element portion including a first element. The first element includes a first gate, a first collector, and a first emitter. The control circuit performs a first operation and a second operation. In at least a portion of the first operation, the control circuit causes a first current to flow from the first collector toward the first emitter. In at least a portion of the second operation, the control circuit causes a second current to flow from the first emitter toward the first collector. A first time constant of a switching of the first element in the first operation is different from a second time constant of a switching of the first element in the second operation.

7. 发明申请

US20200220533A1 GATE RESISTANCE ADJUSTMENT DEVICE 审中-公开
公开(公告)号：US20200220533A1
公开(公告)日：2020-07-09
申请号：US16564580
申请日：2019-09-09
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Kazuto Takao , Yusuke Hayashi
IPC分类号： H03K17/082 , H03K17/687
摘要： A gate resistance adjustment device has a waveform input unit that inputs waveforms of a drain voltage or a collector voltage and a drain current or a collector current at least one of during a switching device is turned on and during the switching device is turned off, an extraction unit that extracts time required for at least one of turning on or off the switching device and a steady-state drain current or a steady-state collector current of the switching device based on the waveforms input by the waveform input unit, a calculator that calculates a gate resistance of the switching device based on the time and the steady-state drain current or the steady-state collector current that are extracted by the extraction unit, and a setting unit that sets a gate resistance calculated by the calculator in the switching device.

8. 发明授权

US10651161B2 Semiconductor device 有权
公开(公告)号：US10651161B2
公开(公告)日：2020-05-12
申请号：US15909552
申请日：2018-03-01
申请人： Kabushiki Kaisha Toshiba
发明人： Masahiro Koyama , Kentaro Ikeda , Kazuto Takao
IPC分类号： H01L25/11 , H01L25/16 , H01L23/00 , H01L25/18
摘要： According to one embodiment, a semiconductor device includes a first transistor being normally-off, a second transistor being normally-on, and a first conductive member. The first transistor includes a first gate, a first source, a first drain, and a first semiconductor member. The first semiconductor member is provided between the first gate and the first drain and between the first source and the first drain. The second transistor includes a second gate, a second source, a second drain, and a second semiconductor member. An orientation from the first semiconductor member toward the first drain is the same as an orientation from the second semiconductor member toward the second gate, toward the second source, and toward the second drain. The first conductive member electrically connects the first drain and the second source.

9. 发明授权

US10187057B2 Semiconductor module, vehicle and elevator 有权
公开(公告)号：US10187057B2
公开(公告)日：2019-01-22
申请号：US15436262
申请日：2017-02-17
申请人： Kabushiki Kaisha Toshiba
发明人： Kazuto Takao , Kentaro Ikeda
IPC分类号： H03K17/687 , H03K5/02 , H03K5/135 , H03K17/284 , B60L11/18 , B66B11/04
摘要： A semiconductor module of an embodiment includes a first switching device, a first gate drive circuit controlling ON/OFF of the first switching device, a second switching device connected with the first switching device in parallel or in series, a second gate drive circuit controlling ON/OFF of the second switching device, and a control circuit controlling timing of transmitting a gate drive signal from the first gate drive circuit and transmitting a gate drive signal from the second gate drive circuit by synchronizing the first gate drive circuit and the second gate drive circuit.

10. 发明授权

US10158012B1 Semiconductor device 有权
公开(公告)号：US10158012B1
公开(公告)日：2018-12-18
申请号：US15912028
申请日：2018-03-05
申请人： Kabushiki Kaisha Toshiba
发明人： Masahiro Koyama , Kentaro Ikeda , Kazuto Takao
IPC分类号： H01L29/16 , H01L29/205 , H01L29/36 , H01L29/778 , H01L29/49 , H01L29/20
摘要： A semiconductor device includes a first semiconductor layer of silicon carbide, a second semiconductor layer of nitride semiconductor, a third semiconductor layer of nitride semiconductor and a drain electrode. The semiconductor device includes a source electrode that has a first projection portion, a conduction electrode that has a second projection portion and a gate electrode. The first semiconductor layer includes a first region, a second region, a third region and a fourth region.

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