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1. 发明申请

US20150035111A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20150035111A1
公开(公告)日：2015-02-05
申请号：US14186694
申请日：2014-02-21
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Tsuyoshi OTA , Yoichi HORI , Takao NODA
IPC分类号： H01L29/872
CPC分类号： H01L29/872 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/49 , H01L29/06 , H01L29/0692 , H01L29/16 , H01L29/1608 , H01L29/417 , H01L29/8611 , H01L2224/04042 , H01L2224/05624 , H01L2224/05644 , H01L2224/05655 , H01L2224/05666 , H01L2224/05684 , H01L2224/48463 , H01L2224/48491 , H01L2224/4911 , H01L2924/00014 , H01L2924/12032 , H01L2924/12036 , H01L2924/351 , H01L2924/00 , H01L2224/45099 , H01L2224/43
摘要： A semiconductor device includes first and second electrodes. First semiconductor regions of a first conductivity type are positioned between the first electrode and the second electrode and contact the first electrode. These semiconductor regions are arranged along a first direction. A second semiconductor region of the first conductivity type also contacts the first electrode and is disposed around the plurality of first semiconductor regions. The second semiconductor region has a dopant concentration that is higher than the first semiconductor regions. A semiconductor layer of a second conductivity type has portions that are between the first semiconductor regions and the second semiconductor region. These portions are in Schottky contact with the first electrode.

2. 发明申请

US20170077220A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20170077220A1
公开(公告)日：2017-03-16
申请号：US15062207
申请日：2016-03-07
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Ryoichi OHARA , Takao NODA , Yoichi HORI
IPC分类号： H01L29/06 , H01L29/872 , H01L29/78 , H01L29/16
CPC分类号： H01L29/0634 , H01L29/0615 , H01L29/0692 , H01L29/1608 , H01L29/32 , H01L29/7811 , H01L29/872
摘要： A semiconductor device includes a SiC layer that has a first surface and a second surface, a first electrode in contact with the first surface, a first SiC region of a first conductivity type in the SiC layer, a second SiC region of a second conductivity type in the SiC layer and surrounding a portion of the first SiC region, a third SiC region of the second conductivity type in the SiC layer and surrounding the second SiC region, the third SiC region having an impurity concentration of the second conductivity type lower than that of the second SiC region, and a fourth SiC region of the second conductivity type in the SiC layer between the second SiC region and the third Sic region, the fourth SiC region having an impurity concentration of the second conductivity type higher than that of the second SiC region.
摘要翻译：半导体器件包括具有第一表面和第二表面的SiC层，与第一表面接触的第一电极，SiC层中的第一导电类型的第一SiC区域，第二导电类型的第二SiC区域在SiC层中并且包围第一SiC区域的一部分，SiC层中的第二导电类型的第三SiC区域并且围绕第二SiC区域，具有低于第二导电类型的第二导电类型的第三导电类型的第三SiC区域以及在第二SiC区域和第三Sic区域之间的SiC层中的第二导电类型的第四SiC区域，具有比第二SiC区域的第二导电类型的第二导电类型的杂质浓度高的第四SiC区域 SiC区域。

3. 发明申请

US20140014971A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20140014971A1
公开(公告)日：2014-01-16
申请号：US14023177
申请日：2013-09-10
申请人： Kabushiki Kaisha Toshiba
发明人： Naoko YANASE , Shingo MASUKO , Takaaki YASUMOTO , Ryoichi OHARA , Yorito KAKIUCHI , Takao NODA , Kenya SANO
IPC分类号： H01L29/04
CPC分类号： H01L29/04 , H01L21/046 , H01L21/0485 , H01L29/0619 , H01L29/1608 , H01L29/402 , H01L29/45 , H01L29/66068 , H01L29/7802 , H01L29/8611
摘要： According to one embodiment, a semiconductor device includes a SiC layer of a first conductivity type, a SiC region of a second conductivity type, and a conductive layer of the second conductivity type. The SiC layer of the first conductivity type has a hexagonal crystal structure. The SiC region of the second conductivity type is formed in a surface of the SiC layer. The conductive layer of the second conductivity type is provided on the SiC region and is in contact with a portion of the SiC region including SiC of a cubic crystal structure.
摘要翻译：根据一个实施例，半导体器件包括第一导电类型的SiC层，第二导电类型的SiC区域和第二导电类型的导电层。第一导电型的SiC层具有六方晶系结构。第二导电类型的SiC区域形成在SiC层的表面中。第二导电类型的导电层设置在SiC区域上，并且与包括立方晶体结构的SiC的SiC区域的一部分接触。

4. 发明申请

US20150372153A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20150372153A1
公开(公告)日：2015-12-24
申请号：US14475568
申请日：2014-09-02
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Yoichi HORI , Takao NODA , Tsuyoshi OTA
IPC分类号： H01L29/868 , H01L29/66 , H01L23/528 , H01L29/872
CPC分类号： H01L29/872 , H01L23/482 , H01L23/4824 , H01L23/4827 , H01L24/05 , H01L24/48 , H01L24/49 , H01L29/0619 , H01L29/1608 , H01L2224/04042 , H01L2224/4813 , H01L2224/4846 , H01L2224/4847 , H01L2224/491 , H01L2924/00014 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes a first electrode, a second electrode, a first semiconductor region that is formed between the first electrode and the second electrode and is in contact with the first electrode, a second semiconductor region that is formed between the first semiconductor region and the second electrode, a contact region that is formed between the second semiconductor region and the second electrode and is in contact with the second semiconductor region and the second electrode, a plurality of third semiconductor regions that are formed between the second electrode and the first semiconductor region and are in contact with the second electrode, and a wiring that is in contact with the second electrode, a portion of the wiring bonded to the second electrode being positioned above the third semiconductor region and not positioned above the contact region.
摘要翻译：半导体器件包括第一电极，第二电极，形成在第一电极和第二电极之间并与第一电极接触的第一半导体区域，形成在第一半导体区域和第二半导体区域之间的第二半导体区域第二电极，形成在第二半导体区域和第二电极之间并与第二半导体区域和第二电极接触的接触区域，形成在第二电极和第一半导体区域之间的多个第三半导体区域并且与第二电极接触，并且与第二电极接触的布线，接合到第二电极的布线的一部分位于第三半导体区域上方，并且不位于接触区域上方。

5. 发明申请

US20150287840A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20150287840A1
公开(公告)日：2015-10-08
申请号：US14743214
申请日：2015-06-18
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Tsuyoshi OTA , Yoichi HORI , Takao NODA
IPC分类号： H01L29/872 , H01L29/417 , H01L29/06 , H01L29/16 , H01L23/00
CPC分类号： H01L29/872 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/49 , H01L29/06 , H01L29/0692 , H01L29/16 , H01L29/1608 , H01L29/417 , H01L29/8611 , H01L2224/04042 , H01L2224/05624 , H01L2224/05644 , H01L2224/05655 , H01L2224/05666 , H01L2224/05684 , H01L2224/48463 , H01L2224/48491 , H01L2224/4911 , H01L2924/00014 , H01L2924/12032 , H01L2924/12036 , H01L2924/351 , H01L2924/00 , H01L2224/45099 , H01L2224/43
摘要： A semiconductor device includes first and second electrodes. First semiconductor regions of a first conductivity type are positioned between the first electrode and the second electrode and contact the first electrode. These semiconductor regions are arranged along a first direction. A second semiconductor region of the first conductivity type also contacts the first electrode and is disposed around the plurality of first semiconductor regions. The second semiconductor region has a dopant concentration that is higher than the first semiconductor regions. A semiconductor layer of a second conductivity type has portions that are between the first semiconductor regions and the second semiconductor region. These portions are in Schottky contact with the first electrode.
摘要翻译：半导体器件包括第一和第二电极。第一导电类型的第一半导体区域位于第一电极和第二电极之间并与第一电极接触。这些半导体区域沿第一方向排列。第一导电类型的第二半导体区域还与第一电极接触并设置在多个第一半导体区域周围。第二半导体区域的掺杂剂浓度高于第一半导体区域。第二导电类型的半导体层具有位于第一半导体区域和第二半导体区域之间的部分。这些部分与第一电极肖特基接触。

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