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1. 发明申请

US20210066130A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME 有权
公开(公告)号：US20210066130A1
公开(公告)日：2021-03-04
申请号：US16802670
申请日：2020-02-27
申请人： KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
发明人： Shinji NUNOTANI , Shinji ONZUKA
IPC分类号： H01L21/784 , H01L21/283 , H01L21/268 , H01L21/306 , H01L21/304 , H01L21/3065 , H01L29/417 , H01L29/868 , H01L29/872 , H01L21/265 , H01L29/45 , H01L29/78 , H01L29/739 , H01L21/683
摘要： A semiconductor device includes a semiconductor part, first and second electrodes. The semiconductor part is provided between the first and second electrodes. A method of manufacturing the device includes forming the first electrode covering a back surface of a wafer after the second electrode is formed on a front surface of the wafer; forming a first groove by selectively removing the first electrode; and dividing the wafer by forming a second groove at the front surface side. The wafer includes a region to be the semiconductor part; and the first and second grooves are provided along a periphery of the region. The first groove is in communication with the first groove. The second groove has a width in a direction along the front surface of the wafer, the width of the first groove being narrower than a width of the first groove in the same direction.

2. 发明申请

US20220246734A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME 有权
公开(公告)号：US20220246734A1
公开(公告)日：2022-08-04
申请号：US17725124
申请日：2022-04-20
申请人： KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
发明人： Shinji NUNOTANI , Shinji ONZUKA
IPC分类号： H01L29/41 , H01L21/784 , H01L21/268 , H01L21/306 , H01L21/304 , H01L21/3065 , H01L29/417 , H01L29/868 , H01L29/872 , H01L21/265 , H01L29/45 , H01L29/78 , H01L29/739 , H01L21/683 , H01L21/283 , H01L29/861 , H01L29/06
摘要： A semiconductor device includes a semiconductor part, first and second electrodes. The semiconductor part is provided between the first and second electrodes. A method of manufacturing the device includes forming the first electrode covering a back surface of a wafer after the second electrode is formed on a front surface of the wafer; forming a first groove by selectively removing the first electrode; and dividing the wafer by forming a second groove at the front surface side. The wafer includes a region to be the semiconductor part; and the first and second grooves are provided along a periphery of the region. The first groove is in communication with the first groove. The second groove has a width in a direction along the front surface of the wafer, the width of the first groove being narrower than a width of the first groove in the same direction.

3. 发明公开

US20230253233A1 SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20230253233A1
公开(公告)日：2023-08-10
申请号：US17901920
申请日：2022-09-02
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Shinji NUNOTANI , Kazuo FUJIMURA
IPC分类号： H01L21/683 , H01L21/304
CPC分类号： H01L21/6835 , H01L21/304 , H01L2221/68327
摘要： A semiconductor manufacturing apparatus includes first and second stages and a peripheral edge holder. The first stage supports a wafer with a resin sheet interposed. The wafer is separated into a central part and a peripheral edge part on the resin sheet. The first stage supports the central part of the wafer. The second stage surrounds the first stage and fixes an outer circumference part of the resin sheet. The outer circumference part is positioned outward of the first stage. The second stage is movable relative to the first stage to apply tension to the outer circumference part of the resin sheet. The peripheral edge holder holds the peripheral edge part of the wafer. The first and second stages move relative to each other so that the tension peels the resin sheet from the peripheral edge part of the wafer fixed to the peripheral edge holder.

4. 发明申请

US20220020592A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
公开(公告)号：US20220020592A1
公开(公告)日：2022-01-20
申请号：US17489529
申请日：2021-09-29
申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
发明人： Toshiyuki NISHIKAWA , Kazuhiko KOMATSU , Shinji NUNOTANI , Yoshiyuki HARADA , Hideto SUGAWARA
IPC分类号： H01L21/285 , H01L33/40 , H01L29/47
摘要： A semiconductor device includes an n-type semiconductor layer; a first metal layer provided on the n-type semiconductor layer, the first metal layer including first atoms capable of being n-type impurities in the n-type semiconductor layer; a second metal layer provided on the first metal layer, the second metal layer including titanium atoms; a third metal layer provided on the second metal layer; and a second atom capable of being a p-type impurity in the n-type semiconductor layer. The second atom and a part of the titanium atoms are included in a vicinity of an interface between the first metal layer and the second metal layer.

5. 发明申请

US20150069437A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20150069437A1
公开(公告)日：2015-03-12
申请号：US14328048
申请日：2014-07-10
申请人： Kabushiki Kaisha Toshiba
发明人： Hideyuki TOMIZAWA , Akihiro KOJIMA , Miyoko SHIMADA , Yosuke AKIMOTO , Hideko MUKAIDA , Mitsuyoshi ENDO , Hideto FURUYAMA , Yoshiaki SUGIZAKI , Kazuo FUJIMURA , Shinya ITO , Shinji NUNOTANI
IPC分类号： H01L33/50 , H01L33/00
CPC分类号： H01L33/54 , H01L33/0079 , H01L33/46 , H01L33/505 , H01L33/60 , H01L2933/0025 , H01L2933/005
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a sealing member configured to cover a lower surface of the semiconductor layer and a side surface of the semiconductor layer to protrude to be higher than an upper surface of the semiconductor layer at a side of the semiconductor layer, a fluorescer layer provided above the semiconductor layer and the sealing member, and an insulating film provided between the sealing member and the semiconductor layer and between the sealing member and the fluorescer layer. A corner of a protruding portion of the sealing member is rounded.
摘要翻译：根据一个实施例，半导体发光器件包括半导体层，被配置为覆盖半导体层的下表面的密封构件和半导体层的侧表面突出成高于半导体层的上表面的侧表面半导体层的一侧，设置在半导体层上方的荧光层和密封构件，以及设置在密封构件和半导体层之间以及密封构件和荧光层之间的绝缘膜。密封构件的突出部分的角部是圆形的。

6. 发明申请

US20140349421A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20140349421A1
公开(公告)日：2014-11-27
申请号：US14455540
申请日：2014-08-08
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Akira FUJIMOTO , Ryota KITAGAWA , Kumi MASUNAGA , Kenji NAKAMURA , Tsutomu NAKANISHI , Koji ASAKAWA , Takanobu KAMAKURA , Shinji NUNOTANI
IPC分类号： H01L33/40
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/38 , H01L33/40 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes an electrode layer provided on the second semiconductor layer side of the structure. The electrode layer includes a metal portion with a thickness of not less than 10 nanometers and not more than 100 nanometers. A plurality of openings pierces the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. The device includes an inorganic film providing on the metal portion and inner surfaces of the openings, the inorganic film having transmittivity with respect to light emitted from the light emitting layer.
摘要翻译：根据一个实施例，半导体发光器件包括包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层的结构。该器件还包括设置在该结构的第二半导体层侧上的电极层。电极层包括厚度不小于10纳米且不大于100纳米的金属部分。多个开口刺穿金属部分，每个开口具有不小于10纳米且不大于5微米的等效圆直径。所述装置包括在所述金属部分和所述开口的内表面上提供的无机膜，所述无机膜相对于从所述发光层发射的光具有透射率。

7. 发明申请

US20150311393A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20150311393A1
公开(公告)日：2015-10-29
申请号：US14741789
申请日：2015-06-17
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Koji ASAKAWA , Akira FUJIMOTO , Ryota KITAGAWA , Kumi MASUNAGA , Takanobu KAMAKURA , Shinji NUNOTANI
IPC分类号： H01L33/38 , H01L33/32 , H01L33/40 , H01L33/00
CPC分类号： H01L33/38 , H01L33/0025 , H01L33/0079 , H01L33/20 , H01L33/32 , H01L33/382 , H01L33/40 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a structure, a first electrode layer, and a second electrode layer. The structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode layer is provided on the first semiconductor layer side of the structure. The first electrode layer is made of metal and contains a portion contacting the first semiconductor layer. The second electrode layer is provided on the second semiconductor layer side of the structure. The second electrode layer has a metal portion with a thickness of not less than 10 nanometers and not more than 50 nanometers, and a plurality of openings piercing the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers.
摘要翻译：根据一个实施例，半导体发光器件包括结构，第一电极层和第二电极层。该结构包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。第一电极层设置在该结构的第一半导体层一侧。第一电极层由金属制成并且包含接触第一半导体层的部分。第二电极层设置在该结构的第二半导体层一侧。第二电极层具有厚度不小于10纳米且不大于50纳米的金属部分，并且穿过金属部分的多个开口，每个开口的当量圆直径不小于10纳米，不超过5微米。

8. 发明申请

US20160079497A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS 审中-公开
标题翻译：半导体发光装置和发光装置
公开(公告)号：US20160079497A1
公开(公告)日：2016-03-17
申请号：US14634889
申请日：2015-03-01
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Rintaro OKAMOTO , Shinji NUNOTANI
IPC分类号： H01L33/60 , H01L33/54 , H01L33/00 , H01L33/62 , H01L33/50
CPC分类号： H01L33/60 , H01L33/0066 , H01L33/0079 , H01L33/38 , H01L33/505 , H01L33/62 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2933/0041 , H01L2933/005 , H01L2933/0058 , H01L2924/00014
摘要： A semiconductor light emitting device is provided. The semiconductor light emitting device includes a semiconductor substrate having a first face on a first side, a second face on a second side opposite to the first face, and a third face which joins the first face and the second face. The semiconductor light emitting device further includes a first light reflection film in contact with at least a portion of the third face of the semiconductor substrate. The semiconductor device further includes a laminated body that is provided on the second side of the semiconductor substrate, and includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer.
摘要翻译：提供半导体发光器件。半导体发光器件包括：半导体衬底，具有第一面上的第一面，与第一面相反的第二面上的第二面;以及与第一面和第二面接合的第三面。半导体发光器件还包括与半导体衬底的第三面的至少一部分接触的第一光反射膜。半导体器件还包括设置在半导体衬底的第二侧上的层叠体，并且包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。

9. 发明申请

US20140077221A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20140077221A1
公开(公告)日：2014-03-20
申请号：US14082864
申请日：2013-11-18
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Koichi GENEI , Tokuhiko MATSUNAGA , Katsufumi KONDO , Shinji NUNOTANI
IPC分类号： H01L33/40 , H01L33/00
CPC分类号： H01L33/0025 , H01L33/14 , H01L33/30 , H01L33/38 , H01L33/387 , H01L33/405
摘要： An embodiment has an emission layer, a first electrode having a reflective metal layer, an insulating layer, first and second conductivity type layers, and a second electrode. The insulating layer is provided on the first electrode and has an opening where a portion of the first electrode is provided. The first conductivity type layer is provided between the insulating layer and the emission layer and has bandgap energy larger than that of the emission layer. The second conductivity type layer is provided on the emission layer and has a current diffusion layer and a second contact layer. The second contact layer is not superimposed on the opening of the insulating layer, and a thickness of the current diffusion layer is larger than that of the first contact layer. The second electrode has a pad portion and a thin portion extends from the pad portion onto the second contact layer.
摘要翻译：实施例具有发射层，具有反射金属层的第一电极，绝缘层，第一和第二导电类型层以及第二电极。绝缘层设置在第一电极上，并且具有设置第一电极的一部分的开口。第一导电类型层设置在绝缘层和发射层之间，其带隙能量大于发射层的带隙能量。第二导电类型层设置在发射层上并具有电流扩散层和第二接触层。第二接触层不叠加在绝缘层的开口上，并且电流扩散层的厚度大于第一接触层的厚度。第二电极具有焊盘部分，并且薄部分从焊盘部分延伸到第二接触层上。

10. 发明申请

US20130292729A1 LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US20130292729A1
公开(公告)日：2013-11-07
申请号：US13929465
申请日：2013-06-27
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Shinji NUNOTANI , Yasuhiko AKAIKE , Kayo INOUE , Katsufumi KONDO , Tokuhiko MATSUNAGA
IPC分类号： H01L33/42 , H01L33/40
CPC分类号： H01L33/42 , H01L33/14 , H01L33/38 , H01L33/405
摘要： According to one embodiment, a light emitting element, includes: a semiconductor stacked body including a light emitting layer; a first upper electrode being connected directly to the semiconductor stacked body; at least one second upper electrode extending from the first upper electrode, the at least one second upper electrode being connected to the semiconductor stacked body via a first contact layer; a lower electrode; a transparent conductive layer; an intermediate film containing oxygen provided between the semiconductor stacked body and the transparent conductive layer; a light reflecting layer; and a current-blocking layer, at least one slit being provided selectively in the current-blocking layer as viewed from a direction perpendicular to a major surface of the light emitting layer.
摘要翻译：根据一个实施例，发光元件包括：包括发光层的半导体层叠体; 第一上电极直接连接到半导体层叠体; 从所述第一上部电极延伸的至少一个第二上部电极，所述至少一个第二上部电极经由第一接触层连接到所述半导体层叠体; 下电极透明导电层; 含有设置在所述半导体层叠体和所述透明导电层之间的氧的中间膜; 光反射层; 和电流阻挡层，当从垂直于发光层的主表面的方向观察时，至少一个狭缝选择性地设置在电流阻挡层中。

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