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1. 发明授权

US09915622B2 Wafer inspection 有权
公开(公告)号：US09915622B2
公开(公告)日：2018-03-13
申请号：US14838194
申请日：2015-08-27
申请人： KLA-Tencor Corporation
发明人： Anatoly Romanovsky , Ivan Maleev , Daniel Kavaldjiev , Yury Yuditsky , Dirk Woll , Stephen Biellak , Mehdi Vaez-Iravani , Guoheng Zhao
IPC分类号： G01N21/95 , G01N21/47 , G01N21/88 , G01N21/956
CPC分类号： G01N21/9501 , G01N21/47 , G01N21/8806 , G01N21/8851 , G01N21/956
摘要： Systems configured to inspect a wafer are provided. One system includes an illumination subsystem configured to direct pulses of light to an area on a wafer; a scanning subsystem configured to scan the pulses of light across the wafer; a collection subsystem configured to image pulses of light scattered from the area on the wafer to a sensor, wherein the sensor is configured to integrate a number of the pulses of scattered light that is fewer than a number of the pulses of scattered light that can be imaged on the entire area of the sensor, and wherein the sensor is configured to generate output responsive to the integrated pulses of scattered light; and a computer subsystem configured to detect defects on the wafer using the output generated by the sensor.

2. 发明授权

US09291575B2 Wafer inspection 有权
标题翻译：晶圆检查
公开(公告)号：US09291575B2
公开(公告)日：2016-03-22
申请号：US14530805
申请日：2014-11-02
申请人： KLA-Tencor Corporation
发明人： Guoheng Zhao , Jenn-Kuen Leong , Mehdi Vaez-Iravani
IPC分类号： G01J4/00 , G01N21/95 , G01N21/88 , G01N21/21 , G01N21/47 , H01L21/66
CPC分类号： G01N21/9501 , G01N21/21 , G01N21/47 , G01N21/8806 , G01N2201/06113 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： Systems and methods for inspecting a wafer are provided. One system includes an illumination subsystem configured to illuminate the wafer; a collection subsystem configured to collect light scattered from the wafer and to preserve the polarization of the scattered light; an optical element configured to separate the scattered light collected in different segments of the collection numerical aperture of the collection subsystem, where the optical element is positioned at a Fourier plane or a conjugate of the Fourier plane of the collection subsystem; a polarizing element configured to separate the scattered light in one of the different segments into different portions of the scattered light based on polarization; and a detector configured to detect one of the different portions of the scattered light and to generate output responsive to the detected light, which is used to detect defects on the wafer.
摘要翻译：提供了用于检查晶片的系统和方法。一个系统包括配置成照亮晶片的照明子系统; 收集子系统，被配置为收集从晶片散射的光并保持散射光的偏振; 光学元件，被配置为将收集在收集子系统的收集数值孔径的不同段中的散射光分离，其中所述光学元件位于所述收集子系统的傅立叶平面或所述傅立叶平面的共轭处; 偏振元件，被配置为基于极化将所述不同段中的一个中的散射光分离成所述散射光的不同部分; 以及检测器，被配置为检测散射光的不同部分中的一个，并且响应于检测到的光而产生输出，所述检测光用于检测晶片上的缺陷。

3. 发明申请

US20140362372A1 Simultaneous Multi-Spot Inspection and Imaging 有权
标题翻译：同时多点检测和成像
公开(公告)号：US20140362372A1
公开(公告)日：2014-12-11
申请号：US14465656
申请日：2014-08-21
申请人： KLA-Tencor Corporation
发明人： Mehdi Vaez-Iravani , Lawrence Robert Miller
IPC分类号： G01N21/88 , G01N21/95
CPC分类号： G01N21/8806 , G01N21/9501 , G01N21/95623 , G01N2021/8822 , G01N2021/8845 , G01N2201/12
摘要： A compact and versatile multi-spot inspection imaging system employs an objective for focusing an array of radiation beams to a surface and a second reflective or refractive objective having a large numerical aperture for collecting scattered radiation from the array of illuminated spots. The scattered radiation from each illuminated spot is focused to a corresponding optical fiber channel so that information about a scattering may be conveyed to a corresponding detector in a remote detector array for processing. For patterned surface inspection, a cross-shaped filter is rotated along with the surface to reduce the effects of diffraction by Manhattan geometry. A spatial filter in the shape of an annular aperture may also be employed to reduce scattering from patterns such as arrays on the surface. In another embodiment, different portions of the same objective may be used for focusing the illumination beams onto the surface and for collecting the scattered radiation from the illuminated spots simultaneously. In another embodiment, a one-dimensional array of illumination beams is directed at an oblique angle to the surface to illuminate a line of illuminated spots at an angle to the plane of incidence. Radiation scattered from the spots are collected along directions perpendicular to the line of spots or in a double dark field configuration.
摘要翻译：紧凑且通用的多点检查成像系统采用将辐射束阵列聚焦到表面的目标和具有大数值孔径的第二反射或折射物镜，用于收集来自照明点阵列的散射辐射。来自每个照明点的散射辐射被聚焦到相应的光纤通道，使得关于散射的信息可以被传送到用于处理的远程检测器阵列中的相应检测器。对于图案化表面检查，十字形过滤器与表面一起旋转，以减少曼哈顿几何形状的衍射效应。也可以采用环形孔形状的空间滤光器，以减少从诸如表面上的阵列的图案的散射。在另一个实施例中，相同物镜的不同部分可用于将照明光束聚焦到表面上并且用于从同时收集来自照明斑点的散射辐射。在另一个实施例中，照明光束的一维阵列以与入射平面成一角度的一定角度照射到该表面上的倾斜角度。从斑点散射的辐射沿垂直于斑点线的方向或双暗场构型收集。

4. 发明申请

US20140307943A1 INSPECTING HIGH-RESOLUTION PHOTOLITHOGRAPHY MASKS 有权
标题翻译：检查高分辨光刻胶片
公开(公告)号：US20140307943A1
公开(公告)日：2014-10-16
申请号：US14251312
申请日：2014-04-11
申请人： KLA-Tencor Corporation
发明人： Fred Stanke , Ilya Toytman , David Alles , Gregg Anthony Inderhees , Stanley E. Stokowski , Mehdi Vaez-Iravani
IPC分类号： G06T7/00 , G01N21/95
CPC分类号： G06T7/001 , G01N21/956 , G01N2021/95676 , G06K9/00 , G06T2207/10056 , G06T2207/30148
摘要： Optical inspection methods and apparatus for high-resolution photomasks using only a test image. A filter is applied to an image signal received from radiation that is transmitted by or reflected from a photomask having a test image. The filter may be implemented using programmed control to adjust and control filter conditions, illumination conditions, and magnification conditions.
摘要翻译：仅使用测试图像的高分辨率光掩模的光学检测方法和设备。将滤波器应用于从具有测试图像的光掩模透射或反射的辐射接收的图像信号。滤波器可以使用编程控制来实现，以调节和控制滤波器条件，照明条件和放大条件。

5. 发明申请

US20140268118A1 Multi-Spot Defect Inspection System 有权
标题翻译：多点缺陷检测系统
公开(公告)号：US20140268118A1
公开(公告)日：2014-09-18
申请号：US13834662
申请日：2013-03-15
申请人： KLA-TENCOR CORPORATION
发明人： Zhiwei Xu , Christian Wolters , Juergen Reich , Bret Whiteside , Guoheng Zhao , Jijen Vazhaeparambil , Stephen Biellak , Sam Shamouilian , Mehdi Vaez-Iravani
IPC分类号： G01N21/95
CPC分类号： G01N21/9501 , G01N21/956
摘要： The disclosure is directed to a system and method for inspecting a spinning sample by substantially simultaneously scanning multiple spots on a surface of the sample utilizing a plurality of illumination beams. Portions of illumination reflected, scattered, or radiated from respective spots on the surface of the sample are collected by at least one detector array. Information associated with at least one defect of the sample is determined by at least one computing system in communication with the detector array. According to various embodiments, at least one of scan pitch, spot size, spot separation, and spin rate is controlled to compensate pitch error due to tangential spot separation.
摘要翻译：本公开涉及一种用于通过基本上同时使用多个照明光束扫描样品表面上的多个点来检查纺丝样品的系统和方法。通过至少一个检测器阵列收集从样品表面上的各个点反射，散射或辐射的照射部分。与样品的至少一个缺陷相关联的信息由与检测器阵列通信的至少一个计算系统确定。根据各种实施例，控制扫描间距，光斑尺寸，光点分离和旋转速率中的至少一个以补偿由于切点分离引起的俯仰误差。

6. 发明授权

US10488348B2 Wafer inspection 有权
公开(公告)号：US10488348B2
公开(公告)日：2019-11-26
申请号：US15882946
申请日：2018-01-29
申请人： KLA-Tencor Corporation
发明人： Anatoly Romanovsky , Ivan Maleev , Daniel Kavaldjiev , Yury Yuditsky , Dirk Woll , Stephen Biellak , Mehdi Vaez-Iravani , Guoheng Zhao
IPC分类号： G01N21/95 , G01N21/88 , G01N21/47 , G01N21/956
CPC分类号： G01N21/9501 , G01N21/47 , G01N21/8806 , G01N21/8851 , G01N21/956
摘要： Systems configured to inspect a wafer are provided. One system includes an illumination subsystem configured to direct pulses of light to an area on a wafer; a scanning subsystem configured to scan the pulses of light across the wafer; a collection subsystem configured to image pulses of light scattered from the area on the wafer to a sensor, wherein the sensor is configured to integrate a number of the pulses of scattered light that is fewer than a number of the pulses of scattered light that can be imaged on the entire area of the sensor, and wherein the sensor is configured to generate output responsive to the integrated pulses of scattered light; and a computer subsystem configured to detect defects on the wafer using the output generated by the sensor.

7. 发明授权

US09989477B2 Simultaneous multi-spot inspection and imaging 有权
公开(公告)号：US09989477B2
公开(公告)日：2018-06-05
申请号：US15393658
申请日：2016-12-29
申请人： KLA-Tencor Corporation
发明人： Mehdi Vaez-Iravani , Lawrence Robert Miller
IPC分类号： G01N21/00 , G01N21/88 , G01N21/95
CPC分类号： G01N21/8806 , G01N21/9501 , G01N21/95623 , G01N2021/8822 , G01N2021/8845 , G01N2201/12
摘要： A compact and versatile multi-spot inspection imaging system employs an objective for focusing an array of radiation beams to a surface and a second reflective or refractive objective having a large numerical aperture for collecting scattered radiation from the array of illuminated spots. The scattered radiation from each illuminated spot is focused to a corresponding optical fiber channel so that information about a scattering may be conveyed to a corresponding detector in a remote detector array for processing. In one embodiment, a one-dimensional array of illumination beams is directed at an oblique angle to the surface to illuminate a line of illuminated spots at an angle to the plane of incidence. Radiation scattered from the spots are collected along directions perpendicular to the line of spots or in a double dark field configuration.

8. 发明申请

US20150117754A1 APPARATUS AND METHODS FOR INSPECTING EXTREME ULTRA VIOLET RETICLES 有权
标题翻译：检测超极紫外线反应物的装置和方法
公开(公告)号：US20150117754A1
公开(公告)日：2015-04-30
申请号：US14591181
申请日：2015-01-07
申请人： KLA-Tencor Corporation
发明人： Mehran Nasser-Ghodsi , Stanley E. Stokowski , Mehdi Vaez-Iravani
IPC分类号： G06T7/00
CPC分类号： G06T7/001 , G06T2207/10061 , G06T2207/30148
摘要： Disclosed are methods and apparatus for inspecting an extreme ultraviolet (EUV) reticle is disclosed. An inspection tool for detecting electromagnetic waveforms is used to obtain a phase defect map for the EUV reticle before a pattern is formed on the EUV reticle, and the phase defect map identifies a position of each phase defect on the EUV reticle. After the pattern is formed on the EUV reticle, a charged particle tool is used to obtain an image of each reticle portion that is proximate to each position of each phase defect as identified in the phase defect map. The phase defect map and one or images of each reticle portion that is proximate to each position of each phase defect are displayed or stored so as to facilitate analysis of whether to repair or discard the EUV reticle.
摘要翻译：公开了用于检查极紫外（EUV）掩模版的方法和装置。在EUV掩模版上形成图案之前，使用用于检测电磁波的检查工具来获得EUV掩模版的相位缺陷图，并且相位缺陷图识别EUV掩模版上每个相位缺陷的位置。在EUV掩模版上形成图案之后，使用带电粒子工具来获得在相位缺陷图中所识别的每个相缺陷的每个位置附近的每个掩模版部分的图像。显示或存储相位缺陷图以及接近每个相位缺陷的每个位置的每个标线片部分的一个或多个图像，以便于分析是否修复或丢弃EUV标线片。

9. 发明申请

US20150103348A1 Wafer Inspection 有权
标题翻译：晶圆检验
公开(公告)号：US20150103348A1
公开(公告)日：2015-04-16
申请号：US14530805
申请日：2014-11-02
申请人： KLA-Tencor Corporation
发明人： Guoheng Zhao , Jenn-Kuen Leong , Mehdi Vaez-Iravani
IPC分类号： G01N21/95 , G01N21/47 , G01N21/21
CPC分类号： G01N21/9501 , G01N21/21 , G01N21/47 , G01N21/8806 , G01N2201/06113 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： Systems and methods for inspecting a wafer are provided. One system includes an illumination subsystem configured to illuminate the wafer; a collection subsystem configured to collect light scattered from the wafer and to preserve the polarization of the scattered light; an optical element configured to separate the scattered light collected in different segments of the collection numerical aperture of the collection subsystem, where the optical element is positioned at a Fourier plane or a conjugate of the Fourier plane of the collection subsystem; a polarizing element configured to separate the scattered light in one of the different segments into different portions of the scattered light based on polarization; and a detector configured to detect one of the different portions of the scattered light and to generate output responsive to the detected light, which is used to detect defects on the wafer.
摘要翻译：提供了用于检查晶片的系统和方法。一个系统包括配置成照亮晶片的照明子系统; 收集子系统，被配置为收集从晶片散射的光并保持散射光的偏振; 光学元件，被配置为将收集在收集子系统的收集数值孔径的不同段中的散射光分离，其中所述光学元件位于所述收集子系统的傅立叶平面或所述傅立叶平面的共轭处; 偏振元件，被配置为基于极化将所述不同段中的一个中的散射光分离成所述散射光的不同部分; 以及检测器，被配置为检测散射光的不同部分中的一个，并且响应于检测到的光而产生输出，所述检测光用于检测晶片上的缺陷。

10. 发明申请

US20140118730A1 Sample Inspection System Detector 有权
标题翻译：样品检测系统检测器
公开(公告)号：US20140118730A1
公开(公告)日：2014-05-01
申请号：US14062832
申请日：2013-10-24
申请人： KLA-Tencor Corporation
发明人： Daniel Ivanov Kavaldjiev , Stephen Biellak , Guoheng Zhao , Mehdi Vaez-Iravani
IPC分类号： G01N21/95 , H01L27/144
CPC分类号： G01N21/9501 , H01L27/1446
摘要： Methods and systems for enhancing the dynamic range of a high sensitivity inspection system are presented. The dynamic range of a high sensitivity inspection system is increased by directing a portion of the light collected from each pixel of the wafer inspection area toward an array of avalanche photodiodes (APDs) operating in Geiger mode and directing another portion of the light collected from each pixel of the wafer inspection area toward another array of photodetectors having a larger range. The array of APDs operating in Geiger mode is useful for inspection of surfaces that generate extremely low photon counts, while other photodetectors are useful for inspection of larger defects that generate larger numbers of scattered photons. In some embodiments, the detected optical field is split between two different detectors. In some other embodiments, a single detector includes both APDs operating in Geiger mode and other photodetectors having a larger range.
摘要翻译：介绍了提高高灵敏度检测系统动态范围的方法和系统。高灵敏度检测系统的动态范围通过将从晶片检查区域的每个像素收集的光的一部分引导到以盖革模式操作的雪崩光电二极管（APD）阵列并且引导从每个晶片检查区域的像素朝向具有较大范围的另一个光电检测器阵列。以Geiger模式操作的APD阵列对于检查产生极低光子数的表面是有用的，而其他光电探测器可用于检查产生更大数量的散射光子的较大缺陷。在一些实施例中，检测到的光场在两个不同的检测器之间被分开。在一些其他实施例中，单个检测器包括以盖革模式操作的APD和具有较大范围的其它光电探测器。

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