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1. 发明授权

US10345095B1 Model based measurement systems with improved electromagnetic solver performance 有权
公开(公告)号：US10345095B1
公开(公告)日：2019-07-09
申请号：US14947510
申请日：2015-11-20
申请人： KLA-Tencor Corporation
发明人： Stilian Ivanov Pandev , Leonid Poslavsky , Dzmitry Sanko , Andrei V. Shchegrov
IPC分类号： G01B11/06 , G01B11/02 , G01B21/08 , H01L21/66 , G01N21/95 , G01N21/88 , G01N21/64
摘要： Methods and systems for solving measurement models of complex device structures with reduced computational effort are presented. In some embodiments, a measurement signal transformation model is employed to compute transformed measurement signals from coarse measurement signals. The transformed measurement signals more closely approximate a set of measured signals than the coarse measurement signals. However, the coarse set of measured signals are computed with less computational effort than would be required to directly compute measurement signals that closely approximate the set of measured signals. In other embodiments, a measurement signal transformation model is employed to compute transformed measurement signals from actual measured signals. The transformed measurement signals more closely approximate the coarse measurement signals than the actual measured signals. Transformed measurement signals are subsequently used for regression, library generation, or other analyses typically employed as part of an effort to characterize structural, material, and process parameters in semiconductor manufacturing.

2. 发明授权

US10101670B2 Statistical model-based metrology 有权
公开(公告)号：US10101670B2
公开(公告)日：2018-10-16
申请号：US14223045
申请日：2014-03-24
申请人： KLA-Tencor Corporation
发明人： Stilian Ivanov Pandev , Jonathan M. Madsen
IPC分类号： G06G7/48 , G03F7/20 , H01L21/66
摘要： Methods and systems for creating a measurement model based on measured training data are presented. The trained measurement model is used to calculate process parameter values, structure parameter values, or both, directly from measured data collected from other wafers. The measurement models receive measurement data directly as input and provide process parameter values, structure parameter values, or both, as output. The measurement model enables the direct measurement of process parameters. Measurement data from multiple targets is collected for model building, training, and measurement. In some examples, the use of measurement data associated with multiple targets eliminates, or significantly reduces, the effect of under layers in the measurement result, and enables more accurate measurements. Measurement data collected for model building, training, and measurement, may be derived from measurements performed by a combination of multiple, different measurement techniques.

3. 发明授权

US09816810B2 Measurement of multiple patterning parameters 有权
公开(公告)号：US09816810B2
公开(公告)日：2017-11-14
申请号：US15268217
申请日：2016-09-16
申请人： KLA-Tencor Corporation
发明人： Andrei V. Shchegrov , Shankar Krishnan , Kevin Peterlinz , Thaddeus Gerard Dziura , Noam Sapiens , Stilian Ivanov Pandev
IPC分类号： G01B11/27 , G03F7/20 , H01L21/66 , G03F7/00
CPC分类号： G01B11/272 , G01B2210/56 , G03F7/0002 , G03F7/70141 , G03F7/70625 , H01L22/12 , H01L22/30
摘要： Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a single patterned target and a multiple patterned target are measured, the collected data fit to a combined measurement model, and the value of a structural parameter indicative of a geometric error induced by the multiple patterning process is determined based on the fit. In some other examples, light having a diffraction order different from zero is collected and analyzed to determine the value of a structural parameter that is indicative of a geometric error induced by a multiple patterning process. In some embodiments, a single diffraction order different from zero is collected. In some examples, a metrology target is designed to enhance light diffracted at an order different from zero.

4. 发明授权

US09721055B2 Measurement model optimization based on parameter variations across a wafer 有权
公开(公告)号：US09721055B2
公开(公告)日：2017-08-01
申请号：US14478746
申请日：2014-09-05
申请人： KLA-Tencor Corporation
发明人： Stilian Ivanov Pandev
IPC分类号： G01B5/28 , G06F17/50 , H01L21/66
CPC分类号： G06F17/5081 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： An optimized measurement model is determined based a model of parameter variations across a semiconductor wafer. A global, cross-wafer model characterizes a structural parameter as a function of location on the wafer. A measurement model is optimized by constraining the measurement model with the cross-wafer model of process variations. In some examples, the cross-wafer model is itself a parameterized model. However, the cross-wafer model characterizes the values of a structural parameter at any location on the wafer with far fewer parameters than a measurement model that treats the structural parameter as unknown at every location. In some examples, the cross-wafer model gives rise to constraints among unknown structural parameter values based on location on the wafer. In one example, the cross-wafer model relates the values of structural parameters associated with groups of measurement sites based on their location on the wafer.

5. 发明申请

US20170061604A1 Model-Based Metrology Using Images 审中-公开
标题翻译：使用图像的基于模型的计量
公开(公告)号：US20170061604A1
公开(公告)日：2017-03-02
申请号：US15230339
申请日：2016-08-05
申请人： KLA-Tencor Corporation
发明人： Stilian Ivanov Pandev
IPC分类号： G06T7/00 , G06K9/46 , H04N5/225 , G06K9/62
CPC分类号： G06T7/0004 , G03F7/70625 , G03F7/70633 , G06K9/522 , G06K9/624 , G06K9/6247 , G06K9/6269 , G06K9/6282 , G06T2207/20081 , G06T2207/30148 , H04N5/2256 , H04N17/002
摘要： Methods and systems for combining information present in measured images of semiconductor wafers with additional measurements of particular structures within the measured images are presented herein. In one aspect, an image-based signal response metrology (SRM) model is trained based on measured images and corresponding reference measurements of particular structures within each image. The trained, image-based SRM model is then used to calculate values of one or more parameters of interest directly from measured image data collected from other wafers. In another aspect, a measurement signal synthesis model is trained based on measured images and corresponding measurement signals generated by measurements of particular structures within each image by a non-imaging measurement technique. Images collected from other wafers are transformed into synthetic measurement signals associated with the non-imaging measurement technique and a model-based measurement is employed to estimate values of parameters of interest based on the synthetic signals.
摘要翻译：在本文中给出了将存在于半导体晶片的测量图像中的信息与测量图像内的特定结构的附加测量结合的方法和系统。在一个方面，基于图像的信号响应度量（SRM）模型基于测量的图像和每个图像内的特定结构的对应的参考测量来训练。然后使用经过训练的基于图像的SRM模型来从其他晶片收集的测量图像数据直接计算一个或多个感兴趣的参数的值。在另一方面，基于测量图像和通过非成像测量技术在每个图像内的特定结构的测量产生的相应测量信号来训练测量信号合成模型。从其他晶片收集的图像被转换成与非成像测量技术相关联的合成测量信号，并且基于模型的测量被用于基于合成信号来估计感兴趣参数的值。

6. 发明申请

US20170003123A1 Measurement Of Multiple Patterning Parameters 有权
标题翻译：多模式参数测量
公开(公告)号：US20170003123A1
公开(公告)日：2017-01-05
申请号：US15268217
申请日：2016-09-16
申请人： KLA-Tencor Corporation
发明人： Andrei V. Shchegrov , Shankar Krishnan , Kevin Peterlinz , Thaddeus Gerard Dziura , Noam Sapiens , Stilian Ivanov Pandev
IPC分类号： G01B11/27 , G03F7/20 , H01L21/66
CPC分类号： G01B11/272 , G01B2210/56 , G03F7/0002 , G03F7/70141 , G03F7/70625 , H01L22/12 , H01L22/30
摘要： Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a single patterned target and a multiple patterned target are measured, the collected data fit to a combined measurement model, and the value of a structural parameter indicative of a geometric error induced by the multiple patterning process is determined based on the fit. In some other examples, light having a diffraction order different from zero is collected and analyzed to determine the value of a structural parameter that is indicative of a geometric error induced by a multiple patterning process. In some embodiments, a single diffraction order different from zero is collected. In some examples, a metrology target is designed to enhance light diffracted at an order different from zero.
摘要翻译：提出了评估多个图案化工艺性能的方法和系统。测量图案化结构，并确定表征由多重图案化工艺引起的几何误差的一个或多个参数值。在一些示例中，测量单个图案化靶和多个图案化靶，所收集的数据拟合到组合测量模型，并且基于拟合来确定指示由多次图案化工艺引起的几何误差的结构参数的值。在一些其它示例中，收集并分析具有不同于零的衍射级的光，以分析其结果参数的值，该结构参数指示由多重图案化工艺引起的几何误差。在一些实施例中，收集不同于零的单个衍射级。在一些示例中，度量目标被设计为增强以不同于零的顺序衍射的光。

7. 发明授权

US09490182B2 Measurement of multiple patterning parameters 有权
标题翻译：测量多个图案参数
公开(公告)号：US09490182B2
公开(公告)日：2016-11-08
申请号：US14574021
申请日：2014-12-17
申请人： KLA-Tencor Corporation
发明人： Andrei V. Shchegrov , Shankar Krishnan , Kevin Peterlinz , Thaddeus Gerard Dziura , Noam Sapiens , Stilian Ivanov Pandev
IPC分类号： G01B11/27 , H01L21/66 , G03F7/20 , G03F7/00
CPC分类号： G01B11/272 , G01B2210/56 , G03F7/0002 , G03F7/70141 , G03F7/70625 , H01L22/12 , H01L22/30
摘要： Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a single patterned target and a multiple patterned target are measured, the collected data fit to a combined measurement model, and the value of a structural parameter indicative of a geometric error induced by the multiple patterning process is determined based on the fit. In some other examples, light having a diffraction order different from zero is collected and analyzed to determine the value of a structural parameter that is indicative of a geometric error induced by a multiple patterning process. In some embodiments, a single diffraction order different from zero is collected. In some examples, a metrology target is designed to enhance light diffracted at an order different from zero.
摘要翻译：提出了评估多个图案化工艺性能的方法和系统。测量图案化结构，并确定表征由多重图案化工艺引起的几何误差的一个或多个参数值。在一些示例中，测量单个图案化靶和多个图案化靶，所收集的数据拟合到组合测量模型，并且基于拟合来确定指示由多次图案化工艺引起的几何误差的结构参数的值。在一些其它示例中，收集并分析具有不同于零的衍射级的光，以分析其结果参数的值，该结构参数指示由多重图案化工艺引起的几何误差。在一些实施例中，收集不同于零的单个衍射级。在一些示例中，度量目标被设计为增强以不同于零的顺序衍射的光。

8. 发明申请

US20160282731A1 METHODS AND APPARATUS FOR DETERMINING FOCUS 审中-公开
标题翻译：用于确定焦点的方法和装置
公开(公告)号：US20160282731A1
公开(公告)日：2016-09-29
申请号：US15177285
申请日：2016-06-08
申请人： KLA-Tencor Corporation
发明人： Stilian Ivanov Pandev
IPC分类号： G03F9/00
CPC分类号： G03F9/7026 , G03F7/70641
摘要： Disclosed are apparatus and methods for determining optimal focus for a photolithography system. A plurality of optical signals are acquired from a particular target located in a plurality of fields on a semiconductor wafer, and the fields were formed using different process parameters, including different focus values. A feature is extracted from the optical signals related to changes in focus. A curve is fitted to the extracted feature of the optical signals as a function of focus. An extreme point in the curve is determined and reported as an optimal focus for use in the photolithography system.
摘要翻译：公开了用于确定光刻系统的最佳焦点的装置和方法。从位于半导体晶片上的多个场中的特定目标获取多个光信号，并且使用包括不同聚焦值的不同工艺参数形成场。从与焦点变化相关的光信号中提取特征。作为焦点的函数，将曲线拟合到所提取的光信号特征。曲线中的极限点被确定并报告为在光刻系统中使用的最佳焦点。

9. 发明申请

US20150176985A1 Measurement Of Multiple Patterning Parameters 有权
标题翻译：多模式参数测量
公开(公告)号：US20150176985A1
公开(公告)日：2015-06-25
申请号：US14574021
申请日：2014-12-17
申请人： KLA-Tencor Corporation
发明人： Andrei V. Shchegrov , Shankar Krishnan , Kevin Peterlinz , Thaddeus Gerard Dziura , Noam Sapiens , Stilian Ivanov Pandev
IPC分类号： G01B11/27
CPC分类号： G01B11/272 , G01B2210/56 , G03F7/0002 , G03F7/70141 , G03F7/70625 , H01L22/12 , H01L22/30
摘要： Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a single patterned target and a multiple patterned target are measured, the collected data fit to a combined measurement model, and the value of a structural parameter indicative of a geometric error induced by the multiple patterning process is determined based on the fit. In some other examples, light having a diffraction order different from zero is collected and analyzed to determine the value of a structural parameter that is indicative of a geometric error induced by a multiple patterning process. In some embodiments, a single diffraction order different from zero is collected. In some examples, a metrology target is designed to enhance light diffracted at an order different from zero.
摘要翻译：提出了评估多个图案化工艺性能的方法和系统。测量图案化结构，并确定表征由多重图案化工艺引起的几何误差的一个或多个参数值。在一些示例中，测量单个图案化靶和多个图案化靶，所收集的数据拟合到组合测量模型，并且基于拟合来确定指示由多次图案化工艺引起的几何误差的结构参数的值。在一些其它示例中，收集并分析具有不同于零的衍射级的光，以分析其结果参数的值，该结构参数指示由多重图案化工艺引起的几何误差。在一些实施例中，收集不同于零的单个衍射级。在一些示例中，度量目标被设计为增强以不同于零的顺序衍射的光。

10. 发明申请

US20150046121A1 METHODS AND APPARATUS FOR PATTERNED WAFER CHARACTERIZATION 审中-公开
标题翻译：用于图形波形表征的方法和装置
公开(公告)号：US20150046121A1
公开(公告)日：2015-02-12
申请号：US14449646
申请日：2014-08-01
申请人： KLA-Tencor Corporation
发明人： Thaddeus Gerard Dziura , Stilian Ivanov Pandev , Alexander Kuznetsov , Andrei V. Shchegrov
IPC分类号： G01N21/956 , G01N21/95
CPC分类号： G01N21/956 , G01N21/9501 , G01N2201/12
摘要： Disclosed are apparatus and methods for characterizing a plurality of structures of interest on a semiconductor wafer. A plurality of spectra signals are measured from a particular structure of interest at a plurality of azimuth angles from one or more sensors of a metrology system. A difference spectrum is determined based on the spectra signals obtained for the azimuth angles. A quality indication of the particular structure of interest is determined and reported based on analyzing the difference spectrum.
摘要翻译：公开了用于在半导体晶片上表征感兴趣的多个结构的装置和方法。从测量系统的一个或多个传感器的多个方位角处，从感兴趣的特定结构测量多个频谱信号。基于为方位角获得的谱信号确定差谱。通过分析差异谱确定和报告感兴趣的特定结构的质量指示。

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