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1. 发明授权

US09171972B2 Method for producing photoelectric converter and phtotelectric converter 有权
标题翻译：光电转换器和电介质转换器的制造方法
公开(公告)号：US09171972B2
公开(公告)日：2015-10-27
申请号：US14375537
申请日：2013-01-30
申请人： KYOCERA Corporation
发明人： Shiro Miyazaki , Tomofumi Honjo , Koji Niwa , Hironori Kii , Shigeo Aono , Yosuke Nishioka
IPC分类号： H01L31/00 , H01L31/0216 , H01L31/0224 , H01L31/18
CPC分类号： H01L31/0216 , H01L31/02167 , H01L31/0224 , H01L31/022425 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The method for producing a photoelectric converter of the present invention comprises a preparation step for preparing a substrate (2) formed from silicon; a first film-formation step for the formation of a first protective film (3) by deposition of aluminum oxide on a top surface (2B) of the substrate (2) using the atom deposition method or chemical vapor deposition method in an atmosphere containing hydrogen; and a second film-formation step for forming a second protective film (4) by deposition of aluminum oxide on the first protective film (3) using sputtering after the first film-formation step. Moreover, the photoelectric converter of the present invention comprises a substrate formed from silicon; a first protective film formed from aluminum oxide; and a second protective film formed from aluminum oxide, wherein the concentration of hydrogen contained in the first protective film is higher than the concentration of hydrogen contained in the second protective film.
摘要翻译：本发明的光电转换器的制造方法包括：准备由硅形成的基板（2）的准备工序; 第一成膜步骤，用于通过使用原子沉积法或化学气相沉积法在含氢气氛中沉积氧化铝在基底（2）的顶表面（2B）上形成第一保护膜（3） ; 以及第二成膜步骤，用于通过在第一成膜步骤之后使用溅射在第一保护膜（3）上沉积氧化铝来形成第二保护膜（4）。此外，本发明的光电转换器包括由硅形成的基板; 由氧化铝形成的第一保护膜; 以及由氧化铝形成的第二保护膜，其中所述第一保护膜中所含的氢浓度高于所述第二保护膜中所含的氢浓度。

2. 发明授权

US11638405B2 Vegetable production method 有权
公开(公告)号：US11638405B2
公开(公告)日：2023-05-02
申请号：US17786608
申请日：2020-12-18
申请人： KYOCERA Corporation
发明人： Koji Niwa
IPC分类号： A01G7/04 , A01G31/00 , A01G7/00 , A01G22/15
摘要： A vegetable production method includes seeding, causing a cotyledon to sprout from a seed in a first period, growing a vegetable in a second period subsequent to the first period, further growing the vegetable in a third period subsequent to the second period, and harvesting the vegetable. The vegetable is grown with first light having a first maximum value of a light intensity in a wavelength range of 420 to 490 nm and including at least portion of light in a wavelength range of 500 to 600 nm in a later part of the second period, and is grown with second light having a second maximum value of a light intensity in a wavelength range of 590 to 650 nm, having a peak light intensity less than the second maximum value in a visible light wavelength range of less than or equal to 500 nm.

3. 发明申请

US20150001657A1 METHOD FOR PRODUCING PHOTOELECTRIC CONVERTER AND PHOTOELECTRIC CONVERTER 有权
标题翻译：生产光电转换器和光电转换器的方法
公开(公告)号：US20150001657A1
公开(公告)日：2015-01-01
申请号：US14375537
申请日：2013-01-30
申请人： KYOCERA Corporation
发明人： Shiro Miyazaki , Tomofumi Honjo , Koji Niwa , Hironori Kii , Shigeo Aono , Yosuke Nishioka
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/18
CPC分类号： H01L31/0216 , H01L31/02167 , H01L31/0224 , H01L31/022425 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The method for producing a photoelectric converter of the present invention comprises a preparation step for preparing a substrate (2) that has a photoelectric conversion layer (2a) and is formed from silicon; a first film-formation step for the formation of a first protective film (3) by deposition of aluminum oxide on a top surface (2B) of the substrate (2) using the atom deposition method or chemical vapor deposition method in an atmosphere containing hydrogen; and a second film-formation step for forming a second protective film (4) by deposition of aluminum oxide on the first protective film (3) using sputtering after the first film-formation step. Moreover, the photoelectric converter of the present invention comprises a substrate that has a photoelectric conversion layer and is formed from silicon; a first protective film that is deposited on the substrate and is formed from aluminum oxide; and a second protective film that is deposited on the first protective film and is formed from aluminum oxide, wherein the concentration of hydrogen contained in the first protective film is higher than the concentration of hydrogen contained in the second protective film.
摘要翻译：本发明的光电转换器的制造方法包括：制备具有光电转换层（2a）并由硅形成的基板（2）的准备工序; 第一成膜步骤，用于通过使用原子沉积法或化学气相沉积法在含氢气氛中沉积氧化铝在基底（2）的顶表面（2B）上形成第一保护膜（3） ; 以及第二成膜步骤，用于通过在第一成膜步骤之后使用溅射在第一保护膜（3）上沉积氧化铝来形成第二保护膜（4）。此外，本发明的光电转换器包括具有光电转换层并由硅形成的基板; 沉积在基板上并由氧化铝形成的第一保护膜; 以及沉积在第一保护膜上并由氧化铝形成的第二保护膜，其中包含在第一保护膜中的氢的浓度高于第二保护膜中包含的氢的浓度。

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