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    • 1. 发明申请
    • SOLAR CELL, MULTI-JUNCTION SOLAR CELL, SOLAR CELL MODULE, AND PHOTOVOLTAIC POWER GENERATION SYSTEM
    • US20230017543A1
    • 2023-01-19
    • US17938988
    • 2022-09-07
    • KABUSHIKI KAISHA TOSHIBATOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION
    • Kazushige YamamotoNaoyuki NakagawaYukitami MizunoSoichiro ShibasakiYuya HonishiMutsuki YamazakiYoshiko Hiraoka
    • H01L31/072H01L31/0336
    • A solar cell of an embodiment includes a p-electrode, an n-electrode, a p-type light-absorbing layer located between the p-electrode and the n-electrode and mainly containing a cuprous oxide, and an n-type layer includes a first n-type layer which is located between the p-type light-absorbing layer and the n-electrode and mainly contains a compound represented by Gax1M1x2M2x3M3x4Ox5, the M1 being Al and/or B, the M2 being one or more selected from the group consisting of In, Ti, Zn, Hf, and Zr, the M3 being one or more selected from the group consisting of Sn, Si, and Ge, the x1 and the x5 being more than 0, the x2, the x3, and the x4 being 0 or more, and the x5 when a sum of the x1, the x2, the x3, and the x4 is 2 being 3.0 or more and 3.8 or less, and a second n-type layer which is located between the first n-type layer and the n-electrode and mainly contains a compound represented by Gay1M1y2M2y3M3y4Oy5, the y1 and the y5 being more than 0, the y2, the y3, and the y4 being 0 or more, and the y5 when a sum of the y1, the y2, the y3, and the y4 is 2 being 3.0 or more and 3.8 or less, or a first n-type region which is located between the p-type light-absorbing layer and the n-electrode and mainly contains a compound represented by Gax1M1x2M2x3M3x4Ox5, the M1 being Al and/or B, the M2 being one or more selected from the group consisting of In, Ti, Zn, Hf, and Zr, the M3 being one or more selected from the group consisting of Sn, Si, and Ge, the x1 and the x5 being more than 0, the x2, the x3, and the x4 being 0 or more, and the x5 when a sum of the x1, the x2, the x3, and the x4 is 2 being 3.0 or more and 3.8 or less, and a second n-type region which is located between the first n-type region and the n-electrode and mainly contains a compound represented by Gay1M1y2M2y3M3y4Oy5, the y1 and the y5 being more than 0, the y2, the y3, and the y4 being 0 or more, and the y5 when a sum of the y1, the y2, the y3, and the y4 is 2 being 3.0 or more and 3.8 or less, wherein (x2+x3) is larger than (y2+y3).