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1. 发明授权

US08822966B2 Nonvolatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US08822966B2
公开(公告)日：2014-09-02
申请号：US13770463
申请日：2013-02-19
申请人： Kabushiki Kaisha Toshiba
发明人： Kensuke Takahashi , Masanobu Baba , Yusuke Arayashiki
IPC分类号： H01L29/00
CPC分类号： H01L45/14 , H01L27/2481 , H01L45/085 , H01L45/12 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/148 , H01L45/1675
摘要： A nonvolatile memory device has a memory cell including a resistance change layer, a first electrode, and a second electrode. The resistance change layer switches between high and low resistance states due to the transfer of metal ions from the first electrode in response to voltages applied between the electrodes. The first electrode is formed on a first side of the resistance change layer, and provides metal ions. The second electrode is formed on a second side of the resistance change layer. A memory cell region is formed between the first electrode and the second electrode with the resistance change layer. The memory device also includes a high permittivity layer with a higher dielectric constant than the resistance change layer.
摘要翻译：非易失性存储器件具有包括电阻变化层，第一电极和第二电极的存储单元。由于金属离子响应于施加在电极之间的电压而从第一电极的转移，电阻变化层在高电阻状态和低电阻状态之间切换。第一电极形成在电阻变化层的第一侧上，并提供金属离子。第二电极形成在电阻变化层的第二侧上。在具有电阻变化层的第一电极和第二电极之间形成存储单元区域。存储器件还包括具有比电阻变化层更高的介电常数的高介电常数层。

2. 发明授权

US08742391B2 Non-volatile semiconductor memory 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US08742391B2
公开(公告)日：2014-06-03
申请号：US13788596
申请日：2013-03-07
申请人： Kabushiki Kaisha Toshiba
发明人： Ichiro Mizushima , Hirotaka Ogihara , Kensuke Takahashi , Masanobu Baba
IPC分类号： H01L47/00
CPC分类号： H01L45/14 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/148 , H01L45/1616 , H01L45/1675
摘要： A non-volatile semiconductor memory includes a word line extending in a first direction, a first electrode connected to the word line electrically, an ion diffusion layer with connected to the first electrode electrically, a second electrode connected to the ion diffusion layer electrically and formed of a metal to be diffused into the ion diffusion layer when a positive voltage is supplied thereto, and a bit line extending in a second direction perpendicular to the first direction, the bit line connected to the second electrode electrically. The ion diffusion layer has a first region disposed on the first electrode and a second region disposed between the first region and the second electrode, and the metal is more difficult to diffuse into the second region than into the first region.
摘要翻译：非易失性半导体存储器包括：沿第一方向延伸的字线，电连接到字线的第一电极，电连接到第一电极的离子扩散层，电连接到离子扩散层的第二电极当向其提供正电压时扩散到离子扩散层中的金属以及沿垂直于第一方向的第二方向延伸的位线，该位线与第二电极电连接。离子扩散层具有设置在第一电极上的第一区域和设置在第一区域和第二电极之间的第二区域，并且金属比第一区域更难扩散到第二区域。

3. 发明授权

US09530823B2 Memory device and method for manufacturing the same 有权
标题翻译：存储器件及其制造方法
公开(公告)号：US09530823B2
公开(公告)日：2016-12-27
申请号：US14168089
申请日：2014-01-30
申请人： Kabushiki Kaisha Toshiba
发明人： Yusuke Arayashiki , Kensuke Takahashi
IPC分类号： H01L27/24 , H01L45/00
CPC分类号： H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/148 , H01L45/1675
摘要： A memory device according to an embodiment includes an ion metal layer containing a first metal, an opposing electrode, a resistance change layer disposed between the ion metal layer and the opposing electrode, a first layer disposed in a central portion of a space between the ion metal layer and the resistance change layer, and a second layer disposed in an end portion of the space. The first layer contains a second metal. The second layer contains the second metal, and at least one selected from oxygen and nitrogen.
摘要翻译：根据实施例的存储器件包括：离子金属层，其包含第一金属，相对电极，设置在离子金属层和相对电极之间的电阻变化层，设置在离子之间的空间的中心部分的第一层金属层和电阻变化层，以及设置在该空间的端部的第二层。第一层包含第二层金属。第二层包含第二金属和选自氧和氮的至少一种。

4. 发明授权

US09257640B2 Memory device and method for manufacturing the same 有权
标题翻译：存储器件及其制造方法
公开(公告)号：US09257640B2
公开(公告)日：2016-02-09
申请号：US14168352
申请日：2014-01-30
申请人： Kabushiki Kaisha Toshiba
发明人： Yusuke Arayashiki , Kensuke Takahashi
IPC分类号： H01L45/02 , H01L45/00 , H01L27/24
CPC分类号： H01L45/085 , H01L27/2481 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/16 , H01L45/1675
摘要： A memory device according to an embodiment includes an ion metal layer, an opposing electrode, and a resistance change layer. The ion metal layer contains a first metal and a second metal. The resistance change layer is disposed between the ion metal layer and the opposing electrode. The first metal is able to move repeatedly through an interior of the resistance change layer. The concentration of the first metal in a central portion of the ion metal layer is higher than the concentration of the first metal in an end portion of the ion metal layer.
摘要翻译：根据实施例的存储器件包括离子金属层，相对电极和电阻变化层。离子金属层包含第一金属和第二金属。电阻变化层设置在离子金属层与对置电极之间。第一金属能够反复移动通过电阻变化层的内部。离子金属层的中心部分中的第一金属的浓度高于离子金属层的端部中的第一金属的浓度。

5. 发明授权

US09793102B2 Semiconductor manufacturing apparatus and semiconductor manufacturing method 有权
公开(公告)号：US09793102B2
公开(公告)日：2017-10-17
申请号：US14644952
申请日：2015-03-11
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Kazuyuki Miura , Kensuke Takahashi
IPC分类号： H01L21/00 , H01L21/67 , H01L21/677
CPC分类号： H01L21/00 , H01L21/67253 , H01L21/67745 , H01L21/67754 , Y02P90/28
摘要： In one embodiment, a semiconductor manufacturing apparatus includes a stage provided in a chamber, and a conveying module configured to convey a plurality of wafers into the chamber and to set the plurality of wafers on the stage. The apparatus further includes a controller configured to divide treatment time for simultaneously treating the plurality of wafers on the stage into first to K-th treatment periods where K is an integer of two or more, and to change positions of one or more of the plurality of wafers on the stage by the conveying module according to the treatment periods.

6. 发明申请

US20150069314A1 MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：存储器件及其制造方法
公开(公告)号：US20150069314A1
公开(公告)日：2015-03-12
申请号：US14168089
申请日：2014-01-30
申请人： Kabushiki Kaisha Toshiba
发明人： Yusuke ARAYASHIKI , Kensuke Takahashi
IPC分类号： H01L45/00
CPC分类号： H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/148 , H01L45/1675
摘要： A memory device according to an embodiment includes an ion metal layer containing a first metal, an opposing electrode, a resistance change layer disposed between the ion metal layer and the opposing electrode, a first layer disposed in a central portion of a space between the ion metal layer and the resistance change layer, and a second layer disposed in an end portion of the space. The first layer contains a second metal. The second layer contains the second metal, and at least one selected from oxygen and nitrogen.
摘要翻译：根据实施例的存储器件包括：离子金属层，其包含第一金属，相对电极，设置在离子金属层和相对电极之间的电阻变化层，设置在离子之间的空间的中心部分的第一层金属层和电阻变化层，以及设置在该空间的端部的第二层。第一层包含第二层金属。第二层包含第二金属和选自氧和氮的至少一种。

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