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1. 发明授权

US11527661B2 Semiconductor device 有权
公开(公告)号：US11527661B2
公开(公告)日：2022-12-13
申请号：US17377352
申请日：2021-07-15
申请人： KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
发明人： Hiroyuki Irifune , Hiroshi Kono , Makoto Mizukami , Shuji Kamata
IPC分类号： H01L29/872 , H01L27/06 , H01L29/16 , H01L29/47
摘要： A semiconductor device includes a first electrode, a second electrode, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type; a third semiconductor layer of the first conductivity type; a first active region; and a third electrode. The first semiconductor layer is located between the first electrode and the second electrode. The second semiconductor layer is located above the first semiconductor layer. The first active region is next to the second semiconductor layer in a second direction. The first active region includes a first upper portion and a first upper portion. An average value of a width in the second direction of the first lower portion is greater than an average value of a width in the second direction of the first upper portion. The third semiconductor layer is electrically connected with the second electrode.

2. 发明授权

US10211118B2 Semiconductor module 有权
公开(公告)号：US10211118B2
公开(公告)日：2019-02-19
申请号：US15690250
申请日：2017-08-29
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Shuji Kamata
IPC分类号： H01L23/31 , H01L23/373 , H01L23/04 , H01L23/29 , H01L23/00 , H05K1/02 , H05K1/11 , H01L21/48 , H01L21/56 , H01L23/492 , H01L25/00 , H01L25/065
摘要： A semiconductor module includes a metal substrate having a mounting surface, a first conductive plate on the mounting surface, an insulating substrate on the first conductive plate, a second conductive plate on the insulating substrate, a conductive pad on the insulating substrate, a semiconductor element on the second conductive plate, a circuit board electrically connected to the conductive pad, a resin case connected to the metal substrate and extending along at least a portion thereof, and around the first conductive plate, the insulating substrate, the second conductive plate, the conductive pad, the semiconductor element, and the circuit board, and a silicone gel in a region bounded by the metal substrate and the resin case. The circuit board comprises a plurality of planar surfaces oriented perpendicular to the mounting surface of the metal substrate.

3. 发明申请

US20150243771A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20150243771A1
公开(公告)日：2015-08-27
申请号：US14471804
申请日：2014-08-28
申请人： Kabushiki Kaisha Toshiba
发明人： Shuji Kamata
IPC分类号： H01L29/739 , H01L29/08 , H01L29/51 , H01L29/16 , H01L29/417 , H01L29/04
CPC分类号： H01L29/7397 , H01L29/0619 , H01L29/0696 , H01L29/402 , H01L29/4238
摘要： A semiconductor device according to embodiments includes a semiconductor substrate, first semiconductor layers of a first conductive type provided on a surface of the semiconductor substrate, extend in a first direction, and are surrounded by a gate layer, second semiconductor layers of the first conductive type provided between the first semiconductor layers, a third semiconductor layer of the first conductive type provided at ends of the first direction of the first semiconductor layers and is surrounded by the gate layer, a fourth semiconductor layer of a second conductive type provided in the semiconductor substrate, a sixth semiconductor layer of the first conductive type provided on a back surface of the semiconductor substrate, a seventh semiconductor layer of the second conductive type provided between the sixth semiconductor layer and the first semiconductor layers, an emitter electrode, and a collector electrode.
摘要翻译：根据实施例的半导体器件包括半导体衬底，设置在半导体衬底的表面上的第一导电类型的第一半导体层在第一方向上延伸并被栅极层包围，第一导电类型的第二半导体层设置在第一半导体层之间，第一导电类型的第三半导体层设置在第一半导体层的第一方向的端部并被栅极层包围，设置在半导体衬底中的第二导电类型的第四半导体层设置在半导体衬底的背面上的第一导电类型的第六半导体层，设置在第六半导体层和第一半导体层之间的第二导电类型的第七半导体层，发射极和集电极。

4. 发明申请

US20160043205A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20160043205A1
公开(公告)日：2016-02-11
申请号：US14644011
申请日：2015-03-10
申请人： Kabushiki Kaisha Toshiba
发明人： Shuji Kamata
IPC分类号： H01L29/739 , H01L29/10
CPC分类号： H01L29/7395 , H01L29/0692 , H01L29/1095 , H01L29/42368 , H01L29/42376 , H01L29/4238 , H01L29/7397
摘要： A semiconductor device according to embodiments includes: a semiconductor substrate including; a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type above the first semiconductor layer; a third semiconductor layer above the second semiconductor layer; a plurality of gate layers arranged inside the semiconductor substrate, the gate layers extending in a first direction and being arranged in line in a second direction orthogonal to the first direction; a plurality of first semiconductor regions of the second conductivity type arranged on the third semiconductor layer between a first gate layer and a second gate layer of the gate layers, the first and second gate layers being adjacent to each other; a gate insulating film having a larger film thickness at a region excluding the first semiconductor regions than at the first semiconductor regions; an emitter electrode; and a collector.
摘要翻译：根据实施例的半导体器件包括：半导体衬底，包括：第一导电类型的第一半导体层; 在第一半导体层上方的第二导电类型的第二半导体层; 在所述第二半导体层上方的第三半导体层; 多个栅极层，布置在所述半导体衬底的内部，所述栅极层沿第一方向延伸并且沿与所述第一方向正交的第二方向成直线排列; 多个第二导电类型的第一半导体区域布置在栅极层的第一栅极层和第二栅极层之间的第三半导体层上，第一和第二栅极层彼此相邻; 栅极绝缘膜，其在除了所述第一半导体区域之外的区域处具有比在所述第一半导体区域处更大的膜厚度; 发射极; 和收藏家。

5. 发明授权

US09111990B1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09111990B1
公开(公告)日：2015-08-18
申请号：US14471804
申请日：2014-08-28
申请人： Kabushiki Kaisha Toshiba
发明人： Shuji Kamata
IPC分类号： H01L29/66 , H01L29/739 , H01L29/417 , H01L29/04 , H01L29/51 , H01L29/16 , H01L29/08
CPC分类号： H01L29/7397 , H01L29/0619 , H01L29/0696 , H01L29/402 , H01L29/4238
摘要： A semiconductor device according to embodiments includes a semiconductor substrate, first semiconductor layers of a first conductive type provided on a surface of the semiconductor substrate, extend in a first direction, and are surrounded by a gate layer, second semiconductor layers of the first conductive type provided between the first semiconductor layers, a third semiconductor layer of the first conductive type provided at ends of the first direction of the first semiconductor layers and is surrounded by the gate layer, a fourth semiconductor layer of a second conductive type provided in the semiconductor substrate, a sixth semiconductor layer of the first conductive type provided on a back surface of the semiconductor substrate, a seventh semiconductor layer of the second conductive type provided between the sixth semiconductor layer and the first semiconductor layers, an emitter electrode, and a collector electrode.
摘要翻译：根据实施例的半导体器件包括半导体衬底，设置在半导体衬底的表面上的第一导电类型的第一半导体层在第一方向上延伸并被栅极层包围，第一导电类型的第二半导体层设置在第一半导体层之间，第一导电类型的第三半导体层设置在第一半导体层的第一方向的端部并被栅极层包围，设置在半导体衬底中的第二导电类型的第四半导体层设置在半导体衬底的背面上的第一导电类型的第六半导体层，设置在第六半导体层和第一半导体层之间的第二导电类型的第七半导体层，发射极和集电极。

6. 发明授权

US09024430B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09024430B2
公开(公告)日：2015-05-05
申请号：US14194593
申请日：2014-02-28
申请人： Kabushiki Kaisha Toshiba
发明人： Shuji Kamata
IPC分类号： H01L23/48 , H01L29/73 , H01L23/34 , H01L23/495
CPC分类号： H01L23/49541 , H01L23/051 , H01L23/49575 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a semiconductor element in a frame body. The semiconductor element includes a first electrode electrically connected to an electrode block provided on a first side of the semiconductor element. A connection element, which in some embodiments may be a portion of the electrode block, connects the electrode block to the frame body. The semiconductor element is sealed within an enclosure formed at least in part by the frame body, the connection element, and the electrode block. The connection element includes a fragile portion which has a resistance to increases in pressure or temperature that is less than other portions of the connection element. That is, in general, the fragile portion will fail before other portions of the connection element when pressure or temperature increases, which may occur when, for example, the semiconductor element breaks down.
摘要翻译：半导体器件包括框架体中的半导体元件。半导体元件包括电连接到设置在半导体元件的第一侧上的电极块的第一电极。在一些实施例中，连接元件可以是电极块的一部分，将电极块连接到框体。半导体元件被密封在由框体，连接元件和电极块至少部分地形成的外壳内。连接元件包括脆性部分，其具有比连接元件的其它部分小的压力或温度增加的阻力。也就是说，通常，当压力或温度增加时，脆性部分将在连接元件的其它部分之前失效，这在例如半导体元件破裂时可能发生。

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