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1. 发明授权

US08508005B2 STRAM with compensation element and method of making the same 失效
标题翻译： STRAM具有补偿元素和制作方法
公开(公告)号：US08508005B2
公开(公告)日：2013-08-13
申请号：US13477200
申请日：2012-05-22
申请人： Kaizhong Gao , Haiwen Xi , Wenzhong Zhu , Olle Heinonen
发明人： Kaizhong Gao , Haiwen Xi , Wenzhong Zhu , Olle Heinonen
IPC分类号： H01L21/66 , G01R33/02 , G01C11/14
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/1284 , G11C11/161 , G11C11/1675
摘要： A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.
摘要翻译：自旋转移力矩存储单元包括具有易磁化轴的自由磁性层; 具有被固定在参考方向上的磁化取向的参考磁性元件; 将自由磁性层与磁性参考元件分离的电绝缘和非磁性隧道势垒层; 以及与自由磁性层相邻的补偿元件。补偿元件对自由磁性层的磁化取向施加偏置场。偏置场由平行于自由磁性层的容易轴的第一矢量分量和与自由磁性层的容易轴正交的第二矢量分量形成。偏置场减小了切换自由磁性层的磁化取向方向所需的写入电流幅度。

2. 发明申请

US20120248558A1 STRAM WITH COMPENSATION ELEMENT AND METHOD OF MAKING THE SAME 失效
标题翻译：具有补偿元件的条纹及其制造方法
公开(公告)号：US20120248558A1
公开(公告)日：2012-10-04
申请号：US13477200
申请日：2012-05-22
申请人： Kaizhong Gao , Haiwen Xi , Wenzhong Zhu , Olle Heinonen
发明人： Kaizhong Gao , Haiwen Xi , Wenzhong Zhu , Olle Heinonen
IPC分类号： H01L29/82
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/1284 , G11C11/161 , G11C11/1675
摘要： A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.
摘要翻译：自旋转移力矩存储单元包括具有易磁化轴的自由磁性层; 具有被固定在参考方向上的磁化取向的参考磁性元件; 将自由磁性层与磁性参考元件分离的电绝缘和非磁性隧道势垒层; 以及与自由磁性层相邻的补偿元件。补偿元件对自由磁性层的磁化取向施加偏置场。偏置场由平行于自由磁性层的容易轴的第一矢量分量和与自由磁性层的容易轴正交的第二矢量分量形成。偏置场减小了切换自由磁性层的磁化取向方向所需的写入电流幅度。

3. 发明申请

US20110194343A1 STRAM WITH COMPENSATION ELEMENT AND METHOD OF MAKING THE SAME 有权
标题翻译：具有补偿元件的条纹及其制造方法
公开(公告)号：US20110194343A1
公开(公告)日：2011-08-11
申请号：US13086613
申请日：2011-04-14
申请人： Kaizhong Gao , Haiwen Xi , Wenzhong Zhu , Olle Heinonen
发明人： Kaizhong Gao , Haiwen Xi , Wenzhong Zhu , Olle Heinonen
IPC分类号： G11C11/14 , G11B5/66
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/1284 , G11C11/161 , G11C11/1675
摘要： Spin-transfer torque memory having a compensation element is disclosed. A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis and a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.
摘要翻译：公开了具有补偿元件的自旋转矩存储器。自旋转移力矩存储单元包括具有磁性容易轴的自由磁性层和当写入电流通过自旋转移转矩存储单元时由于自旋转矩传递而改变方向的磁化取向; 具有被固定在参考方向上的磁化取向的参考磁性元件; 将自由磁性层与磁性参考元件分离的电绝缘和非磁性隧道势垒层; 以及与自由磁性层相邻的补偿元件。补偿元件对自由磁性层的磁化取向施加偏置场。偏置场由平行于自由磁性层的容易轴的第一矢量分量和与自由磁性层的容易轴正交的第二矢量分量形成。偏置场减小了切换自由磁性层的磁化取向方向所需的写入电流幅度。

4. 发明授权

US08422279B2 STRAM with composite free magnetic element 有权
标题翻译： STRAM与复合自由磁性元件
公开(公告)号：US08422279B2
公开(公告)日：2013-04-16
申请号：US13278247
申请日：2011-10-21
申请人： Yuankai Zheng , Dimitar V. Dimitrov , Dexin Wang , Haiwen Xi , Kaizhong Gao , Olle Heinonen , Wenzhong Zhu
发明人： Yuankai Zheng , Dimitar V. Dimitrov , Dexin Wang , Haiwen Xi , Kaizhong Gao , Olle Heinonen , Wenzhong Zhu
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , B82Y10/00 , B82Y25/00 , G11C11/16 , G11C11/161 , H01F10/3254 , H01F10/3268 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： Spin-transfer torque memory includes a composite free magnetic element, a reference magnetic element having a magnetization orientation that is pinned in a reference direction, and an electrically insulating and non-magnetic tunneling barrier layer separating the composite free magnetic element from the magnetic reference element. The free magnetic element includes a hard magnetic layer exchanged coupled to a soft magnetic layer. The composite free magnetic element has a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit.
摘要翻译：自旋转矩存储器包括复合自由磁性元件，具有沿参考方向固定的磁化取向的参考磁性元件以及将复合自由磁性元件与磁性参考元件分离的电绝缘和非磁性隧道势垒层。自由磁性元件包括与软磁性层交换的硬磁性层。复合自由磁性元件具有当写入电流通过自旋转移转矩存储单元时由于自旋转矩传递而改变方向的磁化取向。

5. 发明申请

US20100226169A1 STRAM WITH COMPENSATION ELEMENT AND METHOD OF MAKING THE SAME 有权
标题翻译：具有补偿元件的条纹及其制造方法
公开(公告)号：US20100226169A1
公开(公告)日：2010-09-09
申请号：US12396905
申请日：2009-03-03
申请人： Kaizhong Gao , Haiwen Xi , Wenzhong Zhu , Olle Heinonen
发明人： Kaizhong Gao , Haiwen Xi , Wenzhong Zhu , Olle Heinonen
IPC分类号： G11C11/14 , H01L21/66 , G01R33/02
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/1284 , G11C11/161 , G11C11/1675
摘要： Spin-transfer torque memory having a compensation element is disclosed. A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis and a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.
摘要翻译：公开了具有补偿元件的自旋转矩存储器。自旋转移力矩存储单元包括具有磁性容易轴的自由磁性层和当写入电流通过自旋转移转矩存储单元时由于自旋转矩传递而改变方向的磁化取向; 具有被固定在参考方向上的磁化取向的参考磁性元件; 将自由磁性层与磁性参考元件分离的电绝缘和非磁性隧道势垒层; 以及与自由磁性层相邻的补偿元件。补偿元件对自由磁性层的磁化取向施加偏置场。偏置场由平行于自由磁性层的容易轴的第一矢量分量和与自由磁性层的容易轴正交的第二矢量分量形成。偏置场减小了切换自由磁性层的磁化取向方向所需的写入电流幅度。

6. 发明申请

US20100182713A1 DATA STORAGE DEVICE WITH BOTH BIT PATTERNED AND CONTINUOUS MEDIA 有权
标题翻译：具有两位图形和连续媒体的数据存储设备
公开(公告)号：US20100182713A1
公开(公告)日：2010-07-22
申请号：US12354932
申请日：2009-01-16
申请人： Kaizhong Gao , Olle Heinonen , Wenzhong Zhu
发明人： Kaizhong Gao , Olle Heinonen , Wenzhong Zhu
IPC分类号： G11B5/02
CPC分类号： G11B5/82 , B82Y10/00 , G11B5/743
摘要： Embodiments of a single data storage device with multiple different data recording media surfaces are disclosed. In one embodiment, at least one of the data recording media surfaces is conventional, such as a continuous or discrete track recording media. Another of the data recording media surfaces is a relatively high areal density, high data rate recording media, such as a bit patterned media (BPM) recording media.
摘要翻译：公开了具有多个不同数据记录介质表面的单个数据存储设备的实施例。在一个实施例中，数据记录介质表面中的至少一个是常规的，例如连续或离散的轨道记录介质。另一种数据记录介质表面是相对较高的面密度，高数据速率记录介质，例如位图形介质（BPM）记录介质。

7. 发明授权

US08203192B2 STRAM with compensation element and method of making the same 有权
标题翻译： STRAM具有补偿元素和制作方法
公开(公告)号：US08203192B2
公开(公告)日：2012-06-19
申请号：US13086613
申请日：2011-04-14
申请人： Kaizhong Gao , Haiwen Xi , Wenzhong Zhu , Olle Heinonen
发明人： Kaizhong Gao , Haiwen Xi , Wenzhong Zhu , Olle Heinonen
IPC分类号： H01L21/66 , G01R33/02 , G11C11/14
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/1284 , G11C11/161 , G11C11/1675
摘要： Spin-transfer torque memory having a compensation element is disclosed. A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis and a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.
摘要翻译：公开了具有补偿元件的自旋转矩存储器。自旋转移力矩存储单元包括具有磁性容易轴的自由磁性层和当写入电流通过自旋转移转矩存储单元时由于自旋转矩传递而改变方向的磁化取向; 具有被固定在参考方向上的磁化取向的参考磁性元件; 将自由磁性层与磁性参考元件分离的电绝缘和非磁性隧道势垒层; 以及与自由磁性层相邻的补偿元件。补偿元件对自由磁性层的磁化取向施加偏置场。偏置场由平行于自由磁性层的容易轴的第一矢量分量和与自由磁性层的容易轴正交的第二矢量分量形成。偏置场减小了切换自由磁性层的磁化取向方向所需的写入电流幅度。

8. 发明申请

US20120039115A1 STRAM WITH COMPOSITE FREE MAGNETIC ELEMENT 有权
标题翻译：具有无复合材料的磁性元件
公开(公告)号：US20120039115A1
公开(公告)日：2012-02-16
申请号：US13278247
申请日：2011-10-21
申请人： Yuankai Zheng , Dimitar V. Dimitrov , Dexin Wang , Haiwen Xi , Kaizhong Gao , Olle Heinonen , Wenzhong Zhu
发明人： Yuankai Zheng , Dimitar V. Dimitrov , Dexin Wang , Haiwen Xi , Kaizhong Gao , Olle Heinonen , Wenzhong Zhu
IPC分类号： G11C11/16
CPC分类号： G11C11/1675 , B82Y10/00 , B82Y25/00 , G11C11/16 , G11C11/161 , H01F10/3254 , H01F10/3268 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： Spin-transfer torque memory includes a composite free magnetic element, a reference magnetic element having a magnetization orientation that is pinned in a reference direction, and an electrically insulating and non-magnetic tunneling barrier layer separating the composite free magnetic element from the magnetic reference element. The free magnetic element includes a hard magnetic layer exchanged coupled to a soft magnetic layer. The composite free magnetic element has a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit.
摘要翻译：自旋转矩存储器包括复合自由磁性元件，具有沿参考方向固定的磁化取向的参考磁性元件以及将复合自由磁性元件与磁性参考元件分离的电绝缘和非磁性隧道势垒层。自由磁性元件包括与软磁性层交换的硬磁性层。复合自由磁性元件具有当写入电流通过自旋转移转矩存储单元时由于自旋转矩传递而改变方向的磁化取向。

9. 发明授权

US08053255B2 STRAM with compensation element and method of making the same 有权
标题翻译： STRAM具有补偿元素和制作方法
公开(公告)号：US08053255B2
公开(公告)日：2011-11-08
申请号：US12396905
申请日：2009-03-03
申请人： Kaizhong Gao , Haiwen Xi , Wenzhong Zhu , Olle Heinonen
发明人： Kaizhong Gao , Haiwen Xi , Wenzhong Zhu , Olle Heinonen
IPC分类号： G01R21/00 , G01R33/02 , H01L21/66 , G11C11/14
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/1284 , G11C11/161 , G11C11/1675
摘要： Spin-transfer torque memory having a compensation element is disclosed. A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis and a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.
摘要翻译：公开了具有补偿元件的自旋转矩存储器。自旋转移力矩存储单元包括具有磁性容易轴的自由磁性层和当写入电流通过自旋转移转矩存储单元时由于自旋转矩传递而改变方向的磁化取向; 具有被固定在参考方向上的磁化取向的参考磁性元件; 将自由磁性层与磁性参考元件分离的电绝缘和非磁性隧道势垒层; 以及与自由磁性层相邻的补偿元件。补偿元件对自由磁性层的磁化取向施加偏置场。偏置场由平行于自由磁性层的容易轴的第一矢量分量和与自由磁性层的容易轴正交的第二矢量分量形成。偏置场减小了切换自由磁性层的磁化取向方向所需的写入电流幅度。

10. 发明授权

US08045366B2 STRAM with composite free magnetic element 有权
标题翻译： STRAM与复合自由磁性元件
公开(公告)号：US08045366B2
公开(公告)日：2011-10-25
申请号：US12396868
申请日：2009-03-03
申请人： Yuankai Zheng , Dimitar V. Dimitrov , Dexin Wang , Haiwen Xi , Kaizhong Gao , Olle Heinonen , Wenzhong Zhu
发明人： Yuankai Zheng , Dimitar V. Dimitrov , Dexin Wang , Haiwen Xi , Kaizhong Gao , Olle Heinonen , Wenzhong Zhu
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , B82Y10/00 , B82Y25/00 , G11C11/16 , G11C11/161 , H01F10/3254 , H01F10/3268 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： Spin-transfer torque memory includes a composite free magnetic element, a reference magnetic element having a magnetization orientation that is pinned in a reference direction, and an electrically insulating and non-magnetic tunneling barrier layer separating the composite free magnetic element from the magnetic reference element. The free magnetic element includes a hard magnetic layer exchanged coupled to a soft magnetic layer. The composite free magnetic element has a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit.
摘要翻译：自旋转矩存储器包括复合自由磁性元件，具有沿参考方向固定的磁化取向的参考磁性元件以及将复合自由磁性元件与磁性参考元件分离的电绝缘和非磁性隧道势垒层。自由磁性元件包括与软磁性层交换的硬磁性层。复合自由磁性元件具有当写入电流通过自旋转移转矩存储单元时由于自旋转矩传递而改变方向的磁化取向。

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