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1. 发明授权

US07683361B2 Method for generating quantum-entangled photon pairs 失效
标题翻译：用于产生量子纠缠光子对的方法
公开(公告)号：US07683361B2
公开(公告)日：2010-03-23
申请号：US11587003
申请日：2004-11-02
申请人： Keiichi Edamatsu , Tadashi Itoh
发明人： Keiichi Edamatsu , Tadashi Itoh
IPC分类号： H01L33/00
CPC分类号： G02F1/3526
摘要： A method for generating a quantum-entangled photon pair is such that a biexciton in such a state that the angular momentum is 0 is generated through two-photon resonance induced by irradiating a semiconductor substance, e.g., CuCl, with two parent photons (angular frequency ωi). A photon pair is then generated by splitting the biexciton thus generated simultaneously into two photons (angular frequencies ωs and ωs′). Since the photon pair is generated by splitting such biexciton having an angular momentum of 0, it has a quantum entanglement with regard to polarization. Since the photon thus generated has a wavelength substantially equal to that of the parent photons, photons of shorter wavelength in a quantum entangled state can be generated.
摘要翻译：用于产生量子纠缠光子对的方法是这样的，即在角动量为0的状态下的双键通过通过用两个父光子照射半导体物质例如CuCl而产生的双光子共振（角频率 ωi）。然后通过将由此同时产生的比特分成两个光子（角频率ωs和ωs'）来产生光子对。由于光子对是通过分割角动量为0的像素产生的，所以它具有关于偏振的量子纠缠。由于这样产生的光子的波长基本上等于母光子的波长，所以可以产生量子纠缠状态的较短波长的光子。

2. 发明申请

US20070216991A1 Method For Generating Quantum-Entangled Photon Pairs 失效
标题翻译：生成量子纠缠光子对的方法
公开(公告)号：US20070216991A1
公开(公告)日：2007-09-20
申请号：US11587003
申请日：2004-11-02
申请人： Keiichi Edamatsu , Tadashi Itoh
发明人： Keiichi Edamatsu , Tadashi Itoh
IPC分类号： G02F1/35
CPC分类号： G02F1/3526
摘要： A method for generating a quantum-entangled photon pair is such that a biexciton in such a state that the angular momentum is 0 is generated through two-photon resonance induced by irradiating a semiconductor substance, e.g., CuCl, with two parent photons (angular frequency ωi). A photon pair is then generated by splitting the biexciton thus generated simultaneously into two photons (angular frequencies ωs and ωs′). Since the photon pair is generated by splitting such biexciton having an angular momentum of 0, it has a quantum entanglement with regard to polarization. Since the photon thus generated has a wavelength substantially equal to that of the parent photons, photons of shorter wavelength in a quantum entangled state can be generated.
摘要翻译：用于产生量子纠缠光子对的方法是这样的，即在角动量为0的状态下的双键通过通过用两个父光子照射半导体物质例如CuCl而产生的双光子共振（角频率欧米茄）。然后通过将由此同时产生的双峰分裂成两个光子（角频率ω和ω'）来产生光子对。由于光子对是通过分割角动量为0的像素产生的，所以它具有关于偏振的量子纠缠。由于这样产生的光子的波长基本上等于母光子的波长，所以可以产生量子纠缠状态的较短波长的光子。

3. 发明授权

US4410262A Sheet transportation and separation apparatus 失效
标题翻译：片材运输和分离设备
公开(公告)号：US4410262A
公开(公告)日：1983-10-18
申请号：US275125
申请日：1981-06-18
申请人： Kenzo Ariyama , Akira Hirose , Tadashi Itoh
发明人： Kenzo Ariyama , Akira Hirose , Tadashi Itoh
IPC分类号： B65H29/54 , G03G15/00 , G03G15/14 , G03G15/22
CPC分类号： G03G15/6502 , B65H29/54 , Y10S271/90
摘要： A sheet transportation and separation apparatus separates a sheet, which is moved in close contact with the surface of a member moving in synchronization with the sheet, from the surface of the moving member by deforming the corner of a leading edge of the sheet by a member operated by the edge of the sheet.
摘要翻译：片材输送和分离设备通过使片材的前缘的角部变形而将通过与片材同步移动的构件的表面紧密接触的片材从移动构件的表面分离由片材的边缘操作。

4. 发明授权

US4598299A Deflection control ink jet printing apparatus 失效
标题翻译：偏转控制喷墨打印设备
公开(公告)号：US4598299A
公开(公告)日：1986-07-01
申请号：US550289
申请日：1983-11-09
申请人： Takahisa Koike , Takao Fukazawa , Kazumi Ishima , Toshiharu Murai , Tadashi Itoh , Toshifumi Kato , Koichiro Jinnai
发明人： Takahisa Koike , Takao Fukazawa , Kazumi Ishima , Toshiharu Murai , Tadashi Itoh , Toshifumi Kato , Koichiro Jinnai
IPC分类号： B41J2/12 , G01D15/18
CPC分类号： B41J2/12
摘要： A deflection control ink jet recording apparatus is capable of compensating for dislocation of dots at all the deflection steps. A deflection amount is adjusted with respect to two points to determine a correlationship between the amplification gain, charge code and deflection amount, so that an amplification gain and a charge code free from dislocation is set for each deflection step. A charge code compensation value is detected to add it to or subtract it from a predetermined charge code assigned to each deflection step, thereby setting a charge voltage code to be assigned to each deflection step in a printout operation.
摘要翻译：偏转控制喷墨记录装置能够补偿所有偏转步骤的点的位错。相对于两个点调整偏转量，以确定放大增益，电荷代码和偏转量之间的相关性，从而为每个偏转步骤设置放大增益和没有位错的电荷代码。检测电荷码补偿值以将其分配给分配给每个偏转步长的预定电荷代码或从其中减去，从而在打印输出操作中设定分配给每个偏转步长的充电电压代码。

5. 发明授权

US07683457B2 Group I-VII semiconductor single crystal thin film and process for producing same 失效
标题翻译： I-VII族半导体单晶薄膜及其制造方法
公开(公告)号：US07683457B2
公开(公告)日：2010-03-23
申请号：US10589003
申请日：2004-11-30
申请人： Tadashi Itoh , Masaaki Ashida
发明人： Tadashi Itoh , Masaaki Ashida
IPC分类号： H01L31/0256
CPC分类号： H01L21/02568 , C30B23/02 , C30B29/12 , H01L21/0242 , H01L21/02488 , H01L21/02521 , H01L21/02631
摘要： A CaF2 buffer layer (3) is formed on a CaF2 (111) substrate (2) by an MBE method. Furthermore, a CuCl thin film is grown on the CaF2 buffer layer (3) by the MBE method while irradiating it with an electron beam to form an electro beam irradiation film (1a). Subsequently, a CuCl thin film is grown by the MBE method without the irradiation of electron beam to form an electron beam non-irradiation film (1b), thereby thus forming a CuCl thin film (a) including the electron beam irradiation film (1a) and the electron beam non-irradiation film (1b). Consequently, a CuCl thin film (1) exhibiting high planarity and crystallinity can be formed.
摘要翻译：通过MBE法在CaF 2（111）衬底（2）上形成CaF 2缓冲层（3）。此外，通过MBE法在CaF 2缓冲层（3）上生长CuCl薄膜，同时用电子束照射形成电子束照射膜（1a）。随后，通过MBE方法生长CuCl薄膜而不照射电子束以形成电子束非照射膜（1b），由此形成包括电子束照射膜（1a）的CuCl薄膜（a）和电子束非照射膜（1b）。因此，可以形成表现出高平坦度和结晶度的CuCl薄膜（1）。

6. 发明授权

US07662731B2 Quantum dot manipulating method and quantum dot production/manipulation apparatus 有权
标题翻译：量子点操作方法和量子点生产/操纵装置
公开(公告)号：US07662731B2
公开(公告)日：2010-02-16
申请号：US10592491
申请日：2005-03-09
申请人： Tadashi Itoh , Masaaki Ashida , Hajime Ishihara , Takuya Iida
发明人： Tadashi Itoh , Masaaki Ashida , Hajime Ishihara , Takuya Iida
IPC分类号： H01L21/00
CPC分类号： G06N99/002 , B82Y10/00 , Y10S438/962
摘要： A quantum dot manipulating method and a generation/manipulation apparatus are provided which can control the size of a large number of generated quantum dots on or below the order of percent which is required for optical applications of the dots.Quantum dots are generated by shining a dot production laser (4a) onto a solid object (3) in a quantum dot production/manipulation apparatus (1) containing superfluid helium (7) therein. A dot manipulation laser (5a) is shone onto the generated quantum dots to manipulate the quantum dots.
摘要翻译：提供了一种量子点操作方法和生成/操作装置，其可以以点数的光学应用所需的百分数量级或以下来控制大量生成的量子点的尺寸。通过在其中含有超流体氦（7）的量子点制造/操作装置（1）中将点生成激光器（4a）照射到固体物体（3）上而产生量子点。点操作激光器（5a）照射到所产生的量子点上以操纵量子点。

7. 发明授权

US08357272B2 Quantum dot manipulating method and quantum dot production/manipulation apparatus 有权
公开(公告)号：US08357272B2
公开(公告)日：2013-01-22
申请号：US12379583
申请日：2009-02-25
申请人： Tadashi Itoh , Masaaki Ashida , Hajime Ishihara , Takuya Iida
发明人： Tadashi Itoh , Masaaki Ashida , Hajime Ishihara , Takuya Iida
IPC分类号： C23C14/34
CPC分类号： G06N99/002 , B82Y10/00 , Y10S438/962
摘要： A quantum dot manipulating method and a generation/manipulation apparatus are provided which can control the size of a large number of generated quantum dots on or below the order of percent which is required for optical applications of the dots.Quantum dots are generated by shining a dot production laser (4a) onto a solid object (3) in a quantum dot production/manipulation apparatus (1) containing superfluid helium (7) therein. A dot manipulation laser (5a) is shone onto the generated quantum dots to manipulate the quantum dots.

8. 发明申请

US20090022192A1 Laser Device and Lasing Method 有权
标题翻译：激光装置和激光方法
公开(公告)号：US20090022192A1
公开(公告)日：2009-01-22
申请号：US10589243
申请日：2004-08-11
申请人： Tadashi Itoh , Masaaki Ashida
发明人： Tadashi Itoh , Masaaki Ashida
IPC分类号： H01S5/00
CPC分类号： H01S5/14 , B82Y10/00 , B82Y20/00 , B82Y30/00 , H01S3/094092 , H01S3/169 , H01S5/0014 , H01S5/041 , H01S5/3412
摘要： A laser device which causes lasing with a use of a semiconductor quantum dot is provided with: a laser member (11) in which the semiconductor quantum dot is formed; a resonator (14) for resonating light generated in the laser member (11); and a pump laser (15) for irradiating the laser member (11) with excitation light whose energy corresponds to two-photon resonant excitation, so as to form a biexciton state in the semiconductor quantum dot by the two-photon resonant excitation. In this way, a laser device which enables lasing using efficient light emission is realized.
摘要翻译：使用半导体量子点引起激光的激光装置设置有：形成有半导体量子点的激光部件（11）; 谐振器（14），用于谐振在所述激光器件（11）中产生的光; 以及激光器（11）用能量对应于双光子共振激发的激发光照射激光器（11）的泵浦激光器（15），以便通过双光子共振激发在半导体量子点中形成双键状态。以这种方式，实现了能够使用高效发光的激光的激光装置。

9. 发明申请

US20070196937A1 Quantum Dot Manipulating Method And Quantum Dot Production/Manipulation Apparatus 有权
标题翻译：量子点操作方法和量子点生产/操纵装置
公开(公告)号：US20070196937A1
公开(公告)日：2007-08-23
申请号：US10592491
申请日：2005-03-09
申请人： Tadashi Itoh , Masaaki Ashida , Hajime Ishihara , Takuya Iida
发明人： Tadashi Itoh , Masaaki Ashida , Hajime Ishihara , Takuya Iida
IPC分类号： H01L21/00
CPC分类号： G06N99/002 , B82Y10/00 , Y10S438/962
摘要： A quantum dot manipulating method and a generation/manipulation apparatus are provided which can control the size of a large number of generated quantum dots on or below the order of percent which is required for optical applications of the dots. Quantum dots are generated by shining a dot production laser (4a) onto a solid object (3) in a quantum dot production/manipulation apparatus (1) containing superfluid helium (7) therein. A dot manipulation laser (5a) is shone onto the generated quantum dots to manipulate the quantum dots.
摘要翻译：提供了一种量子点操作方法和生成/操作装置，其可以以点数的光学应用所需的百分数量级或以下来控制大量生成的量子点的尺寸。通过在其中含有超流体氦（7）的量子点生产/操作装置（1）中将点生成激光器（4a）照射到固体物体（3）上来产生量子点。点操作激光器（5a）照射到产生的量子点上以操纵量子点。

10. 发明申请

US20070090341A1 Group i-vii semiconductor single crystal thin film and process for producing same 失效
标题翻译： i-vii族半导体单晶薄膜及其制造方法
公开(公告)号：US20070090341A1
公开(公告)日：2007-04-26
申请号：US10589003
申请日：2004-11-30
申请人： Tadashi Itoh , Masaaki Ashida
发明人： Tadashi Itoh , Masaaki Ashida
IPC分类号： H01L29/08 , H01L21/28 , H01L29/06 , H01L21/3205 , H01L39/00
CPC分类号： H01L21/02568 , C30B23/02 , C30B29/12 , H01L21/0242 , H01L21/02488 , H01L21/02521 , H01L21/02631
摘要： A CaF2 buffer layer (3) is formed on a CaF2 (111) substrate (2) by an MBE method. Furthermore, a CuCl thin film is grown on the CaF2 buffer layer (3) by the MBE method while irradiating it with an electron beam to form an electro beam irradiation film (1a). Subsequently, a CuCl thin film is grown by the MBE method without the irradiation of electron beam to form an electron beam non-irradiation film (1b), thereby thus forming a CuCl thin film (a) including the electron beam irradiation film (1a) and the electron beam non-irradiation film (1b). Consequently, a CuCl thin film (1) exhibiting high planarity and crystallinity can be formed.
摘要翻译：通过MBE法在CaF 2（111）衬底（2）上形成CaF 2 N 2缓冲层（3）。此外，通过MBE法在CaF 2 N 2缓冲层（3）上生长CuCl薄膜，同时用电子束照射CuCl薄膜以形成电子束照射膜（1a）。随后，通过MBE方法生长CuCl薄膜而不照射电子束以形成电子束非照射膜（1b），由此形成包括电子束照射膜（1）的CuCl薄膜（a） a）和电子束非照射膜（1b）。因此，可以形成表现出高平坦度和结晶度的CuCl薄膜（1）。

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