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1. 发明授权

US07781759B2 Display device and method for manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07781759B2
公开(公告)日：2010-08-24
申请号：US11595028
申请日：2006-11-08
申请人： Keun-kyu Song , Bo-sung Kim
发明人： Keun-kyu Song , Bo-sung Kim
IPC分类号： H01L29/08
CPC分类号： H01L27/3274 , H01L27/3276 , H01L51/0078 , H01L51/0545
摘要： A display device includes an insulating substrate; a plurality of gate wires formed on the insulating substrate, the plurality of gate wires including a gate electrode; a gate insulating layer covering the plurality of gate wires; a transparent electrode layer formed on the gate insulating layer, the transparent electrode layer including a source electrode and a drain electrode disposed about the gate electrode and spaced apart from each other to define a channel region disposed therebetween; a plurality of data wires covering a predetermined portion of the transparent electrode layer and being crossed insulatedly with the plurality of gate wires to define pixels; and an organic semiconductor layer formed on the channel region for each pixel, a predetermined portion of the organic semiconductor layer being operatively connected with the source electrode, the drain electrode, and the gate electrode to form a transistor having an improved characteristic and a novel structure.
摘要翻译：显示装置包括绝缘基板; 形成在所述绝缘基板上的多个栅极布线，所述多个栅极布线包括栅电极; 覆盖所述多个栅极线的栅极绝缘层; 形成在所述栅极绝缘层上的透明电极层，所述透明电极层包括源极电极和漏电极，所述源电极和漏电极围绕所述栅电极设置并彼此间隔开，以限定其间设置的沟道区域; 多个数据线，覆盖所述透明电极层的预定部分并与所述多个栅极线绝缘地交叉以限定像素; 以及形成在每个像素的沟道区上的有机半导体层，所述有机半导体层的预定部分与所述源电极，所述漏电极和所述栅电极可操作地连接，以形成具有改进的特性和新结构的晶体管。

2. 发明申请

US20070012920A1 Flat panel display and method for fabricating the same 有权
标题翻译：平板显示器及其制造方法
公开(公告)号：US20070012920A1
公开(公告)日：2007-01-18
申请号：US11487234
申请日：2006-07-14
申请人： Tae-young Choi , Bo-sung Kim , Keun-kyu Song , Mun-pyo Hong
发明人： Tae-young Choi , Bo-sung Kim , Keun-kyu Song , Mun-pyo Hong
IPC分类号： G02F1/136 , H01L29/04
CPC分类号： G02F1/136227 , G02F1/13458 , G02F2001/136295 , G02F2202/02 , H01L27/3244
摘要： The invention provides a flat panel display having an insulating substrate; a data line formed on the insulating substrate; an interlayer insulating film formed on the data line having a first contact opening exposing the data line; a connecting member formed in a part of the first contact opening; an interlayer insulating film around the first contact opening; a gate insulating film formed on the connecting member having a second contact opening exposing the connecting member; and an organic semiconductor layer formed on the gate insulating film.
摘要翻译：本发明提供一种具有绝缘基板的平板显示器; 形成在所述绝缘基板上的数据线; 形成在数据线上的层间绝缘膜，具有暴露数据线的第一接触开口; 形成在所述第一接触开口的一部分中的连接构件; 围绕所述第一接触开口的层间绝缘膜; 形成在所述连接构件上的栅极绝缘膜，具有暴露所述连接构件的第二接触开口; 以及形成在栅极绝缘膜上的有机半导体层。

3. 发明授权

US08044392B2 Display device and method for manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08044392B2
公开(公告)日：2011-10-25
申请号：US12835655
申请日：2010-07-13
申请人： Keun-kyu Song , Bo-sung Kim
发明人： Keun-kyu Song , Bo-sung Kim
IPC分类号： H01L33/00
CPC分类号： H01L27/3274 , H01L27/3276 , H01L51/0078 , H01L51/0545
摘要： A display device includes an insulating substrate; a plurality of gate wires formed on the insulating substrate, the plurality of gate wires including a gate electrode; a gate insulating layer covering the plurality of gate wires; a transparent electrode layer formed on the gate insulating layer, the transparent electrode layer including a source electrode and a drain electrode disposed about the gate electrode and spaced apart from each other to define a channel region disposed therebetween; a plurality of data wires covering a predetermined portion of the transparent electrode layer and being crossed insulatedly with the plurality of gate wires to define pixels; and an organic semiconductor layer formed on the channel region for each pixel, a predetermined portion of the organic semiconductor layer being operatively connected with the source electrode, the drain electrode, and the gate electrode to form a transistor having an improved characteristic and a novel structure.
摘要翻译：显示装置包括绝缘基板; 形成在所述绝缘基板上的多个栅极布线，所述多个栅极布线包括栅电极; 覆盖所述多个栅极线的栅极绝缘层; 形成在所述栅极绝缘层上的透明电极层，所述透明电极层包括源极电极和漏电极，所述源电极和漏电极围绕所述栅电极设置并彼此间隔开，以限定其间设置的沟道区域; 多个数据线，覆盖所述透明电极层的预定部分并与所述多个栅极线绝缘地交叉以限定像素; 以及形成在每个像素的沟道区上的有机半导体层，所述有机半导体层的预定部分与所述源电极，所述漏电极和所述栅电极可操作地连接，以形成具有改进的特性和新结构的晶体管。

4. 发明授权

US07605395B2 Thin film transistor substrate and method for fabricating the same 失效
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US07605395B2
公开(公告)日：2009-10-20
申请号：US11433733
申请日：2006-05-12
申请人： Keun-kyu Song , Yong-uk Lee , Mun-pyo Hong , Tae-young Choi , Joon-hak Oh , Bo-sung Kim , Soo-jin Kim , Young-min Kim
发明人： Keun-kyu Song , Yong-uk Lee , Mun-pyo Hong , Tae-young Choi , Joon-hak Oh , Bo-sung Kim , Soo-jin Kim , Young-min Kim
IPC分类号： H01L51/10
CPC分类号： H01L51/0533 , H01L51/107
摘要： A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.
摘要翻译：薄膜晶体管基板包括绝缘基板，形成在绝缘基板上的栅极电极，形成在栅电极上并具有用于暴露栅电极的至少一部分的开口的第一栅极绝缘膜，覆盖栅电极由开口暴露并且具有比第一栅极绝缘膜更大的介电常数，在第二栅极绝缘膜的中心区域彼此分开设置的源电极和漏电极，并在其间限定沟道区域，形成在沟道区域中的有机半导体层。还提供了一种用于形成TFT基板的方法。因此，本发明提供了TFT的特性提高的TFT基板。

5. 发明授权

US07538342B2 Flat panel display and method for fabricating the same 有权
标题翻译：平板显示器及其制造方法
公开(公告)号：US07538342B2
公开(公告)日：2009-05-26
申请号：US11487234
申请日：2006-07-14
申请人： Tae-young Choi , Bo-sung Kim , Keun-kyu Song , Mun-pyo Hong
发明人： Tae-young Choi , Bo-sung Kim , Keun-kyu Song , Mun-pyo Hong
IPC分类号： H01L29/08
CPC分类号： G02F1/136227 , G02F1/13458 , G02F2001/136295 , G02F2202/02 , H01L27/3244
摘要： The invention provides a flat panel display having an insulating substrate; a data line formed on the insulating substrate; an interlayer insulating film formed on the data line having a first contact opening exposing the data line; a connecting member formed in a part of the first contact opening; an interlayer insulating film around the first contact opening; a gate insulating film formed on the connecting member having a second contact opening exposing the connecting member; and an organic semiconductor layer formed on the gate insulating film.
摘要翻译：本发明提供一种具有绝缘基板的平板显示器; 形成在所述绝缘基板上的数据线; 形成在数据线上的层间绝缘膜，具有暴露数据线的第一接触开口; 形成在所述第一接触开口的一部分中的连接构件; 围绕所述第一接触开口的层间绝缘膜; 形成在所述连接构件上的栅极绝缘膜，具有暴露所述连接构件的第二接触开口; 以及形成在栅极绝缘膜上的有机半导体层。

6. 发明申请

US20070108442A1 Display device and method for manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20070108442A1
公开(公告)日：2007-05-17
申请号：US11595028
申请日：2006-11-08
申请人： Keun-kyu Song , Bo-sung Kim
发明人： Keun-kyu Song , Bo-sung Kim
IPC分类号： H01L29/08
CPC分类号： H01L27/3274 , H01L27/3276 , H01L51/0078 , H01L51/0545
摘要： A display device includes an insulating substrate; a plurality of gate wires formed on the insulating substrate, the plurality of gate wires including a gate electrode; a gate insulating layer covering the plurality of gate wires; a transparent electrode layer formed on the gate insulating layer, the transparent electrode layer including a source electrode and a drain electrode disposed about the gate electrode and spaced apart from each other to define a channel region disposed therebetween; a plurality of data wires covering a predetermined portion of the transparent electrode layer and being crossed insulatedly with the plurality of gate wires to define pixels; and an organic semiconductor layer formed on the channel region for each pixel, a predetermined portion of the organic semiconductor layer being operatively connected with the source electrode, the drain electrode, and the gate electrode to form a transistor having an improved characteristic and a novel structure.
摘要翻译：显示装置包括绝缘基板; 形成在所述绝缘基板上的多个栅极布线，所述多个栅极布线包括栅电极; 覆盖所述多个栅极线的栅极绝缘层; 形成在所述栅极绝缘层上的透明电极层，所述透明电极层包括源极电极和漏电极，所述源电极和漏电极围绕所述栅电极设置并彼此间隔开，以限定其间设置的沟道区域; 多个数据线，覆盖所述透明电极层的预定部分并与所述多个栅极线绝缘地交叉以限定像素; 以及形成在每个像素的沟道区上的有机半导体层，所述有机半导体层的预定部分与所述源电极，所述漏电极和所述栅电极可操作地连接，以形成具有改进的特性和新结构的晶体管。

7. 发明授权

US07863086B2 Thin film transistor substrate and method for fabricating the same 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US07863086B2
公开(公告)日：2011-01-04
申请号：US12553780
申请日：2009-09-03
申请人： Bo-sung Kim , Soo-jin Kim , Young-min Kim , Keun-kyu Song , Yong-uk Lee , Mun-pyo Hong , Tae-young Choi , Joon-hak Oh
发明人： Bo-sung Kim , Soo-jin Kim , Young-min Kim , Keun-kyu Song , Yong-uk Lee , Mun-pyo Hong , Tae-young Choi , Joon-hak Oh
IPC分类号： H01L51/40
CPC分类号： H01L51/0533 , H01L51/107
摘要： A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.
摘要翻译：薄膜晶体管基板包括绝缘基板，形成在绝缘基板上的栅极电极，形成在栅电极上并具有用于暴露栅电极的至少一部分的开口的第一栅极绝缘膜，覆盖栅电极由开口暴露并且具有比第一栅极绝缘膜更大的介电常数，在第二栅极绝缘膜的中心区域彼此分开设置的源电极和漏电极，并在其间限定沟道区域，形成在沟道区域中的有机半导体层。还提供了一种用于形成TFT基板的方法。因此，本发明提供了TFT的特性提高的TFT基板。

8. 发明申请

US20070018161A1 Thin film transistor substrate and method for fabricating the same 失效
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US20070018161A1
公开(公告)日：2007-01-25
申请号：US11433733
申请日：2006-05-12
申请人： Keun-kyu Song , Yong-uk Lee , Mun-pyo Hong , Tae-young Choi , Joon-hak Oh , Bo-sung Kim , Soo-jin Kim , Young-min Kim
发明人： Keun-kyu Song , Yong-uk Lee , Mun-pyo Hong , Tae-young Choi , Joon-hak Oh , Bo-sung Kim , Soo-jin Kim , Young-min Kim
IPC分类号： H01L29/04 , H01L21/84
CPC分类号： H01L51/0533 , H01L51/107
摘要： A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.
摘要翻译：薄膜晶体管基板包括绝缘基板，形成在绝缘基板上的栅极电极，形成在栅电极上并具有用于暴露栅电极的至少一部分的开口的第一栅极绝缘膜，覆盖栅电极由开口暴露并且具有比第一栅极绝缘膜更大的介电常数，在第二栅极绝缘膜的中心区域彼此分开设置的源电极和漏电极，并在其间限定沟道区域，形成在沟道区域中的有机半导体层。还提供了一种用于形成TFT基板的方法。因此，本发明提供了TFT的特性提高的TFT基板。

9. 发明授权

US07619245B2 Flat panel display and manufacturing method of flat panel display 有权
标题翻译：平板显示器的平板显示及制造方法
公开(公告)号：US07619245B2
公开(公告)日：2009-11-17
申请号：US11497690
申请日：2006-08-01
申请人： Bo-sung Kim , Joon-hak Oh , Yong-uk Lee
发明人： Bo-sung Kim , Joon-hak Oh , Yong-uk Lee
IPC分类号： H01L35/24
CPC分类号： H01L51/0533
摘要： The present disclosure relates to a display device comprising an insulating substrate; a source electrode and a drain electrode on the insulating substrate and separated by a channel area; an organic semiconductor layer formed in the channel area and on at least a portion of the source electrode and at least a portion of the drain electrode; and a self-assembly monolayer having a first portion disposed between the organic semiconductor layer and the source electrode and a second portion disposed between the organic semiconductor layer and the drain electrode to reduce contact resistance between the electrodes and the organic semiconductor layer. Thus, embodiments of present invention provide a display device including a TFT that is enhanced in its performance.
摘要翻译：本公开涉及包括绝缘基板的显示装置; 绝缘基板上的源电极和漏极，并由沟道区分离; 有机半导体层，其形成在所述沟道区域中以及所述源电极和所述漏电极的至少一部分的至少一部分上; 以及具有设置在有机半导体层和源电极之间的第一部分的自组装单层和设置在有机半导体层和漏电极之间的第二部分，以减小电极和有机半导体层之间的接触电阻。因此，本发明的实施例提供了一种显示装置，其包括增强其性能的TFT。

10. 发明授权

US07682886B2 Flat panel display and manufacturing method of flat panel display 有权
标题翻译：平板显示器的平板显示及制造方法
公开(公告)号：US07682886B2
公开(公告)日：2010-03-23
申请号：US12325951
申请日：2008-12-01
申请人： Bo-sung Kim , Joon-hak Oh , Yong-uk Lee
发明人： Bo-sung Kim , Joon-hak Oh , Yong-uk Lee
IPC分类号： H01L21/84
CPC分类号： H01L51/0533
摘要： The present disclosure relates to a display device comprising an insulating substrate; a source electrode and a drain electrode on the insulating substrate and separated by a channel area; an organic semiconductor layer formed in the channel area and on at least a portion of the source electrode and at least a portion of the drain electrode; and a self-assembly monolayer having a first portion disposed between the organic semiconductor layer and the source electrode and a second portion disposed between the organic semiconductor layer and the drain electrode to reduce contact resistance between the electrodes and the organic semiconductor layer. Thus, embodiments of present invention provide a display device including a TFT that is enhanced in its performance.
摘要翻译：本公开涉及包括绝缘基板的显示装置; 绝缘基板上的源电极和漏极，并由沟道区分离; 有机半导体层，其形成在所述沟道区域中以及所述源电极和所述漏电极的至少一部分的至少一部分上; 以及具有设置在有机半导体层和源电极之间的第一部分的自组装单层和设置在有机半导体层和漏电极之间的第二部分，以减小电极和有机半导体层之间的接触电阻。因此，本发明的实施例提供了一种显示装置，其包括增强其性能的TFT。

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