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1. 发明申请

US20120325138A1 FILM-FORMING APPARATUS AND FILM-FORMING METHOD 有权
标题翻译：薄膜成型装置和成膜方法
公开(公告)号：US20120325138A1
公开(公告)日：2012-12-27
申请号：US13527198
申请日：2012-06-19
申请人： Kunihiko SUZUKI , Hideki Ito , Naohisa Ikeya , Hidekazu Tsuchida , Isaho Kamata , Masahiko Ito , Masami Naito , Hiroaki Fujibayashi , Ayumu Adachi , Koichi Nishikawa
发明人： Kunihiko SUZUKI , Hideki Ito , Naohisa Ikeya , Hidekazu Tsuchida , Isaho Kamata , Masahiko Ito , Masami Naito , Hiroaki Fujibayashi , Ayumu Adachi , Koichi Nishikawa
IPC分类号： C30B25/10
CPC分类号： C30B25/10
摘要： A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled.
摘要翻译：一种成膜装置和方法，包括：用于将反应气体供应的成膜室，设置在成膜室的内壁和用于进行成膜工艺的空间之间的圆柱形衬套，主加热器用于从底侧加热设置在衬套内的衬底，设置在衬套和内壁之间的副加热器组，用于从顶侧加热衬底，其中主加热器和次加热器组是电阻的加热器，其中所述副加热器组具有设置在与所述基板最靠近的位置的第一副加热器，以及设置在所述第一子加热器上方的第二副加热器，其中所述第一副加热器将所述基板与主加热器，第二分热器以比第一副加热器低的输出加热衬套，其中主加热器，第一副加热器和第二副加热器的每个温度被单独控制。

2. 发明授权

US09598792B2 Film-forming apparatus and film-forming method 有权
公开(公告)号：US09598792B2
公开(公告)日：2017-03-21
申请号：US13527198
申请日：2012-06-19
申请人： Kunihiko Suzuki , Hideki Ito , Naohisa Ikeya , Hidekazu Tsuchida , Isaho Kamata , Masahiko Ito , Masami Naito , Hiroaki Fujibayashi , Ayumu Adachi , Koichi Nishikawa
发明人： Kunihiko Suzuki , Hideki Ito , Naohisa Ikeya , Hidekazu Tsuchida , Isaho Kamata , Masahiko Ito , Masami Naito , Hiroaki Fujibayashi , Ayumu Adachi , Koichi Nishikawa
IPC分类号： C30B25/10
CPC分类号： C30B25/10
摘要： A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled.

3. 发明授权

US09273412B2 Film-forming apparatus and film-forming method 有权
公开(公告)号：US09273412B2
公开(公告)日：2016-03-01
申请号：US13527198
申请日：2012-06-19
申请人： Kunihiko Suzuki , Hideki Ito , Naohisa Ikeya , Hidekazu Tsuchida , Isaho Kamata , Masahiko Ito , Masami Naito , Hiroaki Fujibayashi , Ayumu Adachi , Koichi Nishikawa
发明人： Kunihiko Suzuki , Hideki Ito , Naohisa Ikeya , Hidekazu Tsuchida , Isaho Kamata , Masahiko Ito , Masami Naito , Hiroaki Fujibayashi , Ayumu Adachi , Koichi Nishikawa
IPC分类号： C30B25/10
摘要： A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled.

4. 发明申请

US20100240223A1 METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法和装置
公开(公告)号：US20100240223A1
公开(公告)日：2010-09-23
申请号：US12729926
申请日：2010-03-23
申请人： Hideki ITO , Naohisa Ikeya
发明人： Hideki ITO , Naohisa Ikeya
IPC分类号： H01L21/18
CPC分类号： H01L21/67109
摘要： A method for manufacturing a semiconductor device, comprising: loading a wafer to be subjected to film formation to a chamber; supporting the wafer to be spaced from a film formation position of the wafer; preliminarily heating the wafer while rotating a rotating member for rotating the wafer through a supporting member during the film formation at a predetermined rotational speed under a state of the wafer to be spaced from the film formation position; placing the wafer on the supporting member in the film formation position; and heating the wafer at a predetermined temperature and supplying a process gas onto the wafer while rotating the wafer.
摘要翻译：一种制造半导体器件的方法，包括：将要成膜的晶片加载到腔室; 支撑晶片与晶片的成膜位置间隔开; 在晶片的状态下以预定的转速旋转用于在成膜期间通过支撑构件旋转晶片的旋转构件与晶片形成位置间隔开的同时预先加热晶片; 将晶片放置在成膜位置的支撑构件上; 并在预定温度下加热晶片，并在转动晶片的同时将工艺气体供应到晶片上。

5. 发明授权

US08008168B2 Method and apparatus for manufacturing semiconductor device 有权
标题翻译：用于制造半导体器件的方法和装置
公开(公告)号：US08008168B2
公开(公告)日：2011-08-30
申请号：US12729926
申请日：2010-03-23
申请人： Hideki Ito , Naohisa Ikeya
发明人： Hideki Ito , Naohisa Ikeya
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/67109
摘要： A method for manufacturing a semiconductor device, comprising: loading a wafer to be subjected to film formation to a chamber; supporting the wafer to be spaced from a film formation position of the wafer; preliminarily heating the wafer while rotating a rotating member for rotating the wafer through a supporting member during the film formation at a predetermined rotational speed under a state of the wafer to be spaced from the film formation position; placing the wafer on the supporting member in the film formation position; and heating the wafer at a predetermined temperature and supplying a process gas onto the wafer while rotating the wafer.
摘要翻译：一种制造半导体器件的方法，包括：将要成膜的晶片加载到腔室; 支撑晶片与晶片的成膜位置间隔开; 在晶片的状态下以预定的转速旋转用于在成膜期间通过支撑构件旋转晶片的旋转构件与晶片形成位置间隔开的同时预先加热晶片; 将晶片放置在成膜位置的支撑构件上; 并在预定温度下加热晶片，并在转动晶片的同时将工艺气体供应到晶片上。

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