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    • 6. 发明授权
    • Thin film transistor substrate and method of manufacture
    • 薄膜晶体管基板及其制造方法
    • US07928437B2
    • 2011-04-19
    • US11955252
    • 2007-12-12
    • Kyoung-Ju ShinChong-Chul ChaiMee-Hye Jung
    • Kyoung-Ju ShinChong-Chul ChaiMee-Hye Jung
    • H01L29/04
    • H01L27/1288H01L27/0248H01L27/1214
    • A thin film transistor (“TFT”) substrate in which the size of a pixel TFT formed in a display area is reduced using a single slit mask, and the length of the channel area of a protection TFT constituting an electrostatic discharge protection circuit formed in a non-display area is formed larger than that of the pixel TFT using the same mask pattern. The TFT substrate includes a signal line and a discharge line formed on a substrate, a signal supply pad formed on one end of the signal line to supply a signal to the signal line, and an electrostatic discharge protection circuit including at least one protection TFT including a plurality of channels formed between the signal supply pad and the discharge line and/or between the signal line and the discharge line.
    • 使用单个狭缝掩模,在显示区域中形成的像素TFT的尺寸减小的薄膜晶体管(“TFT”)基板,以及构成静电放电保护电路的保护TFT的沟道面积的长度 使用相同的掩模图案,非显示区域形成为大于像素TFT的非显示区域。 TFT基板包括形成在基板上的信号线和放电线,形成在信号线的一端上以向信号线提供信号的信号供给焊盘,以及包括至少一个保护TFT的静电放电保护电路, 形成在信号供给焊盘和放电线之间和/或信号线与放电线之间的多个通道。
    • 9. 发明授权
    • Display substrate having the same and method of manufacturing the display substrate
    • 具有相同的显示基板和制造显示基板的方法
    • US07915614B2
    • 2011-03-29
    • US12027102
    • 2008-02-06
    • Kyoung-Ju ShinJang-Soo KimChong-Chul Chai
    • Kyoung-Ju ShinJang-Soo KimChong-Chul Chai
    • H01L33/38
    • G02F1/136213G02F2001/136222
    • A display substrate includes a thin-film transistor (TFT) layer, a color filter layer and a pixel electrode formed on a substrate. The TFT layer includes a gate line, a data line electrically insulated from the gate line and extending in a direction different from the gate line, a TFT electrically connected to the gate line and the data line, and a storage electrode formed from the same layer as the gate line in each pixel. The color filter layer includes a storage hole extending to a portion of the TFT layer corresponding to the storage electrode. The storage hole has a horizontal cross-sectional area greater than the storage electrode, wherein the horizontal cross-sectional area is measured in a plane parallel to the substrate. The pixel electrode is formed on the color filter layer and in the storage hole to form a storage capacitor with the storage electrode.
    • 显示基板包括薄膜晶体管(TFT)层,滤色器层和形成在基板上的像素电极。 TFT层包括栅极线,与栅极线电绝缘并沿与栅极线不同的方向延伸的数据线,与栅极线和数据线电连接的TFT,以及由同一层形成的存储电极 作为每个像素中的栅极线。 滤色器层包括延伸到对应于存储电极的TFT层的一部分的存储孔。 存储孔具有大于存储电极的水平横截面积,其中在平行于衬底的平面中测量水平横截面面积。 像素电极形成在滤色器层和存储孔中,以与存储电极形成存储电容器。
    • 10. 发明授权
    • Thin film diode panel and manufacturing method of the same
    • 薄膜二极管面板及其制造方法相同
    • US07839463B2
    • 2010-11-23
    • US10578028
    • 2004-10-28
    • Kyoung-Ju ShinChong-Chul ChaiJoon-Hak OhJin-Hong KimSung-Jin Hong
    • Kyoung-Ju ShinChong-Chul ChaiJoon-Hak OhJin-Hong KimSung-Jin Hong
    • G02F1/136
    • G02F1/1365G02F1/13624G02F1/136286G02F2001/13629
    • A thin film diode array panel comprising: an insulating substrate (110); first and second redundant gate lines (141, 142) made of an opaque conductor and formed on the insulating substrate; first and second floating electrodes (143, 144) made of an opaque conductor, formed on the insulating substrate, and disposed between the first and second redundant gate lines (141, 142); an insulating layer (151, 152) formed on the first and second floating electrodes (143, 144); a first gate line (121) formed on the first redundant gate line (141) and including a first input electrode (123) overlapping the first floating electrode (143) where the insulating layer (151) is interposed between the first input electrode and the first floating electrode; a second gate line (122) formed on the second redundant gate line (142) and including a second input electrode (124) overlapping the second floating electrode (144) where the insulating layer (152) is interposed between the second input electrode (124) and the second floating electrode (144); and a pixel electrode (190) including a first contact electrode (191) overlapping the first floating electrode (143) where the insulating layer (151) is interposed between the first contact electrode (191) and the first floating electrode (143), a second contact electrode (192) overlapping the second floating electrode (144) where the insulating layer (152) is interposed between the second contact electrode (192) and the second floating electrode (144), and a main body is provided.
    • 一种薄膜二极管阵列面板,包括:绝缘衬底(110); 第一和第二冗余栅极线(141,142),由不透明导体制成并形成在绝缘基板上; 第一和第二浮置电极(143,144),由不透明导体制成,形成在所述绝缘基板上,并设置在所述第一和第二冗余栅极线(141,142)之间; 形成在第一和第二浮置电极(143,144)上的绝缘层(151,152); 第一栅极线(121),形成在所述第一冗余栅极线(141)上并且包括与所述第一浮置电极(143)重叠的第一输入电极(123),其中所述绝缘层(151)插入在所述第一输入电极和 第一浮动电极; 形成在第二冗余栅极线(142)上并包括与第二浮置电极(144)重叠的第二输入电极(124)的第二栅极线(122),其中绝缘层(152)介于第二输入电极 )和第二浮置电极(144); 和包括与所述第一浮动电极(143)重叠的第一接触电极(191)的像素电极(190),其中所述绝缘层(151)插入在所述第一接触电极(191)和所述第一浮动电极(143)之间, 与第二接触电极(192)和第二浮动电极(144)之间插入绝缘层(152)的第二浮动电极(144)重叠的第二接触电极(192)和主体。