专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US10580732B2 Semiconductor device 有权
公开(公告)号：US10580732B2
公开(公告)日：2020-03-03
申请号：US16028370
申请日：2018-07-05
申请人： LAPIS SEMICONDUCTOR CO., LTD.
发明人： Akihiko Nomura
IPC分类号： H01L29/40 , H01L23/522 , H01L23/48 , H01L21/768 , H01L21/02 , H01L23/528 , H01L23/532
摘要： A semiconductor device includes a semiconductor substrate having a first main surface and a second main surface opposite to the first main surface; a first conductive layer disposed on the second main surface; a second conductive layer passing through the semiconductor substrate from the first main surface to the second main surface so that the second conductive layer is connected to the first conductive layer; an organic insulation film disposed to contact with the first conductive layer; and a first insulation layer disposed to contact with the organic insulation film. The second conductive layer has a first portion passing through the semiconductor substrate so that the first portion contacts with the semiconductor substrate through the organic insulation film and the first insulation layer.

2. 发明授权

US10043743B2 Semiconductor device and method of producing semiconductor device 有权
公开(公告)号：US10043743B2
公开(公告)日：2018-08-07
申请号：US15492074
申请日：2017-04-20
申请人： LAPIS SEMICONDUCTOR CO., LTD.
发明人： Akihiko Nomura
IPC分类号： H01L29/40 , H01L23/522 , H01L21/02 , H01L21/768 , H01L23/528 , H01L23/532
摘要： A method of producing a semiconductor device, comprising the steps of forming a through hole in a semiconductor substrate having a first main surface, a second main surface opposite to the first main surface, and a first conductive layer disposed on the second main surface so that the through hole passes through the semiconductor substrate from the first main surface to the second main surface; forming an insulation film to extend from a bottom portion of the through hole to the first main surface through a side surface of the through hole; coating an organic member on the insulation film on the side surface of the through hole and the first main surface; removing an air bubble in the organic member and between the organic member and the insulation film; and forming a first opening portion in the organic member.

3. 发明授权

US09892995B2 Semiconductor device 有权
公开(公告)号：US09892995B2
公开(公告)日：2018-02-13
申请号：US14748537
申请日：2015-06-24
申请人： LAPIS Semiconductor Co., Ltd.
发明人： Akihiko Nomura
IPC分类号： H01L23/48 , H01L23/532 , H01L21/768
CPC分类号： H01L23/481 , H01L21/76877 , H01L21/76898 , H01L23/53238 , H01L2924/0002 , H01L2924/00012 , H01L2924/00
摘要： A semiconductor device includes a semiconductor substrate. The semiconductor substrate has a first main surface and a second main surface opposite to the first main surface, and includes a first conductive layer formed on the second main surface. A through hole penetrates through the semiconductor substrate from the first main surface to the second main surface, so that the first conductive layer formed on the second main surface is exposed at a bottom portion of the through hole. A seed layer is formed on a side surface of the through hole from the bottom portion of the through hole to the first main surface; a second conductive layer is formed on the seed layer; and a third conductive layer is selectively formed on the second conductive layer.

4. 发明授权

US09099536B2 Semiconductor device and method of producing semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US09099536B2
公开(公告)日：2015-08-04
申请号：US13896561
申请日：2013-05-17
申请人： LAPIS Semiconductor Co., Ltd.
发明人： Akihiko Nomura
IPC分类号： H01L21/768 , H01L23/48
CPC分类号： H01L23/481 , H01L21/76877 , H01L21/76898 , H01L23/53238 , H01L2924/0002 , H01L2924/00012 , H01L2924/00
摘要： A method of producing a semiconductor device includes the step of forming a through hole in a semiconductor substrate. The semiconductor substrate has a first main surface and a second main surface opposite to the first main surface, and includes a first conductive layer formed on the second main surface. The through hole penetrates through the semiconductor substrate from the first main surface to the second main surface, so that the first conductive layer formed on the second main surface is exposed at a bottom portion of the through hole. The method further includes the steps of forming a seed layer on a side surface of the through hole from the bottom portion of the through hole to the first main surface; forming a second conductive layer on the seed layer through a first plating process; and forming a third conductive layer selectively on the second conductive layer.
摘要翻译：制造半导体器件的方法包括在半导体衬底中形成通孔的步骤。半导体衬底具有与第一主表面相对的第一主表面和第二主表面，并且包括形成在第二主表面上的第一导电层。通孔从第一主表面穿过半导体衬底到第二主表面，使得形成在第二主表面上的第一导电层在通孔的底部露出。该方法还包括以下步骤：在通孔的侧表面上从通孔的底部到第一主表面形成种子层; 通过第一电镀工艺在种子层上形成第二导电层; 以及在所述第二导电层上选择性地形成第三导电层。

5. 发明授权

US10580721B2 Semiconductor device 有权
公开(公告)号：US10580721B2
公开(公告)日：2020-03-03
申请号：US16185169
申请日：2018-11-09
申请人： LAPIS SEMICONDUCTOR CO., LTD.
发明人： Akihiko Nomura
IPC分类号： H01L23/48 , H01L21/768 , H01L23/532
摘要： A semiconductor device includes a semiconductor substrate having a first main surface and a second main surface opposite to the first main surface; a first conductive layer covering a part of the first main surface; a through electrode connected to the first conductive layer and having a first conductive plated layer and a second conductive plated layer; and a second conductive layer formed on the second main surface. The first conductive plated layer contacts with the semiconductor substrate through a seed layer. The second conductive plated layer is formed on the first conductive plated layer. The second conductive layer is formed of the seed layer, the first conductive plated layer, and the second conductive plated layer. The first conductive plated layer has a first edge surface. The second conductive plated layer has a second edge surface flush with the first edge surface.

6. 发明授权

US10153228B2 Semiconductor device 有权
公开(公告)号：US10153228B2
公开(公告)日：2018-12-11
申请号：US15859801
申请日：2018-01-02
申请人： LAPIS SEMICONDUCTOR CO., LTD.
发明人： Akihiko Nomura
IPC分类号： H01L23/522 , H01L23/48 , H01L21/768 , H01L23/532
摘要： A semiconductor device includes a semiconductor substrate. The semiconductor substrate has a first main surface and a second main surface opposite to the first main surface, and includes a first conductive layer formed on the second main surface. A through hole penetrates through the semiconductor substrate from the first main surface to the second main surface, so that the first conductive layer formed on the second main surface is exposed at a bottom portion of the through hole. A seed layer is formed on a side surface of the through hole from the bottom portion of the through hole to the first main surface; a second conductive layer is formed on the seed layer; and a third conductive layer is selectively formed on the second conductive layer.

7. 发明授权

US09659841B2 Semiconductor device and method of producing semiconductor device 有权
公开(公告)号：US09659841B2
公开(公告)日：2017-05-23
申请号：US14518137
申请日：2014-10-20
申请人： LAPIS SEMICONDUCTOR CO., LTD.
发明人： Akihiko Nomura
IPC分类号： H01L21/00 , H01L23/48 , H01L21/768 , H01L21/02
CPC分类号： H01L23/5226 , H01L21/02118 , H01L21/02318 , H01L21/76831 , H01L21/76832 , H01L21/76898 , H01L23/481 , H01L23/5283 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of producing a semiconductor device, comprising the steps of forming a through hole in a semiconductor substrate having a first main surface, a second main surface opposite to the first main surface, and a first conductive layer disposed on the second main surface so that the through hole passes through the semiconductor substrate from the first main surface to the second main surface; forming an insulation film to extend from a bottom portion of the through hole to the first main surface through a side surface of the through hole; coating an organic member on the insulation film on the side surface of the through hole and the first main surface; removing an air bubble in the organic member and between the organic member and the insulation film; and forming a first opening portion in the organic member.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式