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1. 发明申请

US20220208094A1 DISPLAY DEVICE AND DRIVING METHOD OF THE SAME 有权
公开(公告)号：US20220208094A1
公开(公告)日：2022-06-30
申请号：US17469682
申请日：2021-09-08
申请人： LG Display Co., Ltd.
发明人： YongHo JANG , Younghyun KO
IPC分类号： G09G3/3233 , G09G3/20 , H01L27/32
摘要： The present specification provides a display device and a driving method thereof performing sampling for sensing a sampling voltage of a driving transistor using a fast mode in which a driving transistor operates by a sampling voltage formed in one storage capacitor, and data writing using the slow mode in which the driving transistor is operated by a data voltage formed in another storage capacitor.

2. 发明申请

US20190206971A1 ORGANIC LIGHT EMITTING DISPLAY PANEL AND ORGANIC LIGHT EMITTING DISPLAY APPARATUS USING THE SAME 审中-公开
公开(公告)号：US20190206971A1
公开(公告)日：2019-07-04
申请号：US16216560
申请日：2018-12-11
申请人： LG Display Co., Ltd.
发明人： DaeHwan KIM , Younghyun KO
IPC分类号： H01L27/32 , G09G3/3291
摘要： An organic light emitting display panel and an organic light emitting display apparatus using the same are disclosed, in which a switching transistor and a driving transistor are provided on their respective layers different from each other. To this end, the organic light emitting display panel comprises a substrate partitioned by a plurality of pixels, a driving transistor provided in a first pixel of the pixels and provided on the substrate in a top gate type, a first insulating film for covering the driving transistor, a switching transistor provided on the first insulating film in a top gate type, a second insulating film for covering the first insulating film and the switching transistor, a planarization film provided on the second insulating film, and an organic light emitting diode provided on the planarization film and connected with a driving first conductor of the driving transistor.

3. 发明申请

US20230111218A1 THIN FILM TRANSISTOR AND DISPLAY DEVICE COMPRISING THE SAME 有权
公开(公告)号：US20230111218A1
公开(公告)日：2023-04-13
申请号：US17963101
申请日：2022-10-10
申请人： LG Display Co., Ltd.
发明人： Min-Gu KANG , Younghyun KO , SeungChan CHOI , Jaeman JANG
IPC分类号： H01L29/786 , H01L27/32 , H01L27/12
摘要： A thin film transistor and a display device comprising the same are provided. The thin film transistor comprises an active layer, and a gate electrode at least partially overlapped with the active layer, wherein the active layer includes a channel portion overlapped with the gate electrode, a first connection portion that is in contact with one side of the channel portion, and a second connection portion that is in contact with the other side of the channel portion, the channel portion includes a first channel area and a second channel area, each of the first channel area and the second channel area is extended from the first connection portion to the second connection portion, and a length of the first channel area is shorter than that of the second channel area.

4. 发明申请

US20220399464A1 THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE COMPRISING THE SAME 有权
公开(公告)号：US20220399464A1
公开(公告)日：2022-12-15
申请号：US17751975
申请日：2022-05-24
申请人： LG DISPLAY CO., LTD.
发明人： Younghyun KO , SeungChan CHOI , Min-Gu KANG , Jaeman JANG
IPC分类号： H01L29/786 , H01L27/32
摘要： A thin film transistor substrate is provided, which comprises a substrate, a first thin film transistor on the substrate, and a second thin film transistor on the substrate, wherein the first thin film transistor includes a first active layer having a first channel portion, a first gate insulating layer on the first active layer, a first gate electrode on the first gate insulating layer, a first source electrode connected to the first active layer, and a first drain electrode spaced apart from the first source electrode and connected to the first active layer, the second thin film transistor includes a conductive material layer on the substrate, a first buffer layer on the conductive material layer, a second active layer having a second channel portion on the first buffer layer, a second gate insulating layer on the second active layer, a second gate electrode on the second gate insulating layer, a second source electrode connected to the second active layer, and a second drain electrode spaced apart from the second source electrode and connected to the second active layer, and the conductive material layer is connected to the second source electrode and overlaps the second channel portion. Also, a display device comprising the thin film transistor substrate is provided.

5. 发明申请

US20230140193A1 THIN FILM TRANSISTOR AND DISPLAY DEVICE COMPRISING THE SAME 有权
公开(公告)号：US20230140193A1
公开(公告)日：2023-05-04
申请号：US17977864
申请日：2022-10-31
申请人： LG Display Co., Ltd.
发明人： Sungju CHOI , JungSeok SEO , Younghyun KO , Jaeyoon PARK , Seoyeon IM , Jinwon JUNG
IPC分类号： H01L29/786 , H01L27/32 , H01L27/12
摘要： A thin film transistor and a display device comprising the same are provided. The thin film transistor includes an active layer, and a gate electrode at least partially overlapped with the active layer. The active layer includes a channel portion, a first connection portion that is in contact with one side of the channel portion, and a second connection portion that is in contact with the other side of the channel portion. The channel portion includes a first area and a second area that is disposed in parallel with the first area, each of the first area and the second area is extended from the first connection portion to the second connection portion. An effective gate voltage applied to the first area is smaller than that applied to the second area.

6. 发明申请

US20210193838A1 Thin Film Transistor Array Substrate and Electronic Device Including the Same 有权
公开(公告)号：US20210193838A1
公开(公告)日：2021-06-24
申请号：US17115582
申请日：2020-12-08
申请人： LG Display Co., Ltd.
发明人： Younghyun KO
IPC分类号： H01L29/786
摘要： Provided are a thin film transistor array substrate and an electronic device including the same. The thin film transistor array substrate includes a first active layer disposed on a substrate, a first gate insulating film disposed on the first active layer, a first gate electrode disposed on the first gate insulating film to overlap a part of the first active layer, a first insulating film disposed on the first gate electrode, a second active layer disposed on the first insulating film to overlap the first active layer and the first gate electrode, a second gate insulating film disposed on the second active layer, and a second gate electrode disposed on the second gate insulating film to overlap a part of the second active layer. The first gate electrode and the second gate electrode overlap each other, and thus it is possible to reduce an area occupied by transistors.

7. 发明申请

US20230127842A1 THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE COMPRISING THE SAME 有权
公开(公告)号：US20230127842A1
公开(公告)日：2023-04-27
申请号：US17970576
申请日：2022-10-21
申请人： LG Display Co., Ltd.
发明人： Min-Gu KANG , Younghyun KO , HongRak CHOI
IPC分类号： H01L27/12
摘要： A thin film transistor substrate and a display device including the same are provided. The thin film transistor substrate includes a first thin film transistor and a second thin film transistor on a base substrate, wherein the first thin film transistor includes a first active layer on the base substrate, a first conductive material layer on the first active layer, and a first gate electrode spaced apart from the first active layer and at least partially overlapped with the first active layer, and the second thin film transistor includes a second active layer on the base substrate, a second conductive material layer on the second active layer, and a second gate electrode spaced apart from the second active layer and at least partially overlapped with the second active layer.

8. 发明申请

US20230061581A1 Thin Film Transistor Array Substrate and Electronic Device Including the Same 有权
公开(公告)号：US20230061581A1
公开(公告)日：2023-03-02
申请号：US17975366
申请日：2022-10-27
申请人： LG Display Co., Ltd.
发明人： Younghyun KO
IPC分类号： H01L29/786
摘要： Provided are a thin film transistor army substrate and an electronic device including the same. The thin film transistor army substrate includes a first active layer disposed on a substrate, a first gate insulating film disposed on the first active layer, a first gate electrode disposed on the first gate insulating film to overlap a part of the first active layer, a first insulating film disposed on the first gate electrode, a second active layer disposed on the first insulating film to overlap the first active layer and the first gate electrode, a second gate insulating film disposed on the second active layer, and a second gate electrode disposed on the second gate insulating film to overlap a part of the second active layer. The first gate electrode and the second gate electrode overlap each other, and thus it is possible to reduce an area occupied by transistors.

9. 发明申请

US20220189403A1 DISPLAY DEVICE AND DRIVING METHOD OF THE SAME 有权
公开(公告)号：US20220189403A1
公开(公告)日：2022-06-16
申请号：US17404721
申请日：2021-08-17
申请人： LG DISPLAY CO., LTD.
发明人： Min-Gu KANG , SeungChan CHOI , Younghyun KO
IPC分类号： G09G3/3258 , G09G3/3291
摘要： A display device and a driving method for a display device are provided. The display device uses a second storage capacitor and stably moves the threshold voltage of the driving transistor to a positive value in a diode-connected driving circuit. Accordingly, a compensation performance of a threshold voltage of a driving transistor may be improved.

10. 发明申请

US20220130944A1 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND ELECTRONIC DEVICE INCLUDING THE SAME 有权
公开(公告)号：US20220130944A1
公开(公告)日：2022-04-28
申请号：US17387342
申请日：2021-07-28
申请人： LG DISPLAY CO., LTD.
发明人： Younghyun KO , ChanYong JEONG
IPC分类号： H01L27/32 , H01L51/56
摘要： A thin film transistor array substrate comprises a panel including the thin film transistor array substrate, and an electronic device including the panel that includes a conductive auxiliary layer disposed on the substrate, a gate electrode and first and second electrodes that are disposed on the conductive auxiliary layer and spaced apart from one another, a gate insulating film disposed on the gate electrode, and an active layer disposed on or over the gate insulating film and the first and second electrodes, and including a first region, a second region spaced apart from the first region, a first auxiliary region surrounding the first region, and a second auxiliary region surrounding the second region, where an electrical resistance of each of the first auxiliary region and the second auxiliary region is lower than that of the channel region and higher than that of each of the first and second regions.

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