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1. 发明授权

US09559264B2 Light emitting device package and light emitting apparatus including the package 有权
标题翻译：包括该封装的发光器件封装和发光装置
公开(公告)号：US09559264B2
公开(公告)日：2017-01-31
申请号：US14922620
申请日：2015-10-26
申请人： LG INNOTEK CO., LTD.
发明人： Woo Sik Lim , Jae Won Seo , Bum Jin Yim
IPC分类号： H01L33/40 , H01L33/42 , H01L33/38 , H01L33/44 , H01L33/46 , H01L33/62
CPC分类号： H01L33/405 , H01L33/382 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/62 , H01L2224/16245 , H01L2924/181 , H01L2924/00012
摘要： A light emitting device may include a substrate, a light emitting structure disposed under the substrate, the light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first electrode configured to penetrate the second conductive semiconductor layer and the active layer, so as to come into contact with the first conductive semiconductor layer, a contact layer configured to come into contact with the second conductive semiconductor layer, a first insulation layer disposed between the second conductive semiconductor layer and the first electrode and between the active layer and the first electrode, the first insulation layer being provided for capping of a side portion and an upper portion of the contact layer, and a second electrode configured to penetrate the first insulation layer, so as to come into contact with the contact layer.
摘要翻译：发光器件可以包括衬底，设置在衬底下方的发光结构，发光结构包括第一导电半导体层，有源层和第二导电半导体层，第一电极被配置为穿透第二导电半导体层和有源层，以便与第一导电半导体层接触，被配置为与第二导电半导体层接触的接触层，设置在第二导电半导体层和第一电极之间的第一绝缘层和在所述有源层和所述第一电极之间，所述第一绝缘层设置成用于封盖所述接触层的侧部和上部;以及第二电极，被配置为穿透所述第一绝缘层，以便与所述接触层接触接触层。

2. 发明授权

US09349919B2 Light emitting device and light emitting device package having the same 有权
标题翻译：发光器件和具有该发光器件的发光器件封装
公开(公告)号：US09349919B2
公开(公告)日：2016-05-24
申请号：US14143994
申请日：2013-12-30
申请人： LG Innotek Co., Ltd.
发明人： Woo Sik Lim , Sung Ho Choo , Byeong Kyun Choi
IPC分类号： H01L33/00 , H01L33/36 , H01L33/38 , H01L33/44
CPC分类号： H01L33/382 , H01L33/0008 , H01L33/36 , H01L33/38 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： Disclosed are a light emitting device. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a first electrode disposed in an opening portion of the light emitting structure and contacted with a portion of the first conductive type semiconductor layer, an insulating layer covering the first electrode, a second electrode disposed connected to the second conductive type semiconductor layer and first electrode layer is connected to the second conductive type semiconductor layer and the second electrode. The first electrode layer is disposed on a top surface of the second conductive type semiconductor layer and a top surface of the insulating layer. The second electrode is not vertically overlapped with the first electrode.
摘要翻译：公开了一种发光器件。发光器件包括发光结构，其包括第一导电类型半导体层，有源层和第二导电类型半导体层，第一电极，设置在发光结构的开口部分中并与第一导电类型半导体层导电型半导体层，覆盖第一电极的绝缘层，与第二导电类型半导体层连接的第二电极和第一电极层连接到第二导电类型半导体层和第二电极。第一电极层设置在第二导电类型半导体层的顶表面和绝缘层的顶表面上。第二电极不与第一电极垂直重叠。

3. 发明授权

US08928015B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08928015B2
公开(公告)日：2015-01-06
申请号：US14090906
申请日：2013-11-26
申请人： LG Innotek Co., Ltd.
发明人： Woo Sik Lim , Sung Ho Choo
IPC分类号： H01L33/38 , H01L33/44 , H01L33/20
CPC分类号： H01L33/382 , H01L33/20 , H01L33/38 , H01L33/44 , H01L2224/48091 , H01L2924/00014
摘要： A light emitting device including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, a second conductive type semiconductor layer on the active layer, an electrode layer on the second conductive type semiconductor layer, a first electrode on the first conductive type semiconductor layer, and a second electrode on the second conductive type semiconductor layer and in an opening, the opening being in the electrode layer, wherein the second electrode has a first portion in the opening and a second portion extending from the first portion and overlapping at least a portion of the first electrode.
摘要翻译：一种发光器件，包括第一导电类型半导体层，第一导电类型半导体层上的有源层，有源层上的第二导电类型半导体层，第二导电类型半导体层上的电极层，第二导电类型半导体层上的第一电极第一导电类型半导体层和第二导电类型半导体层上的第二电极，并且在开口中，开口位于电极层中，其中第二电极在开口中具有第一部分，第二部分从第一部分并且与第一电极的至少一部分重叠。

4. 发明授权

US10586892B2 Light emitting device with an electrostatic discharge (ESD) suppression pattern having first and second conductive particles dispersed in a resin 有权
公开(公告)号：US10586892B2
公开(公告)日：2020-03-10
申请号：US15770158
申请日：2016-10-21
申请人： LG INNOTEK CO., LTD.
发明人： Jun Hee Hong , Deok Ki Hwang , Hoe Jun Kim , Woo Sik Lim
IPC分类号： H01L33/36 , H01L25/16 , H01L33/44 , H01L33/62 , H01L33/48 , H01L33/38
摘要： One embodiment relates to a light emitting device which is free from electrostatic discharge by using an electrostatic discharge suppressing pattern including a resin having particles conductive and dispersed therein, the light emitting device comprising: a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first electrode connected with the first conductive semiconductor layer; a second electrode connected with the second conductive semiconductor layer; and an electrostatic discharge suppressing pattern, which is overlapped with the first electrode and the second electrode, and of which first particles are dispersed in the resin so as to cover a gap between the first electrode and the second electrode.

5. 发明授权

US10411166B2 Light emitting device and lighting apparatus 有权
公开(公告)号：US10411166B2
公开(公告)日：2019-09-10
申请号：US16363178
申请日：2019-03-25
申请人： LG INNOTEK CO., LTD.
发明人： Woo Sik Lim , Jae Won Seo
IPC分类号： H01L33/46 , H01L33/44 , H01L33/38 , H01L33/48 , H01L33/62 , H01L33/40
摘要： A light emitting device includes a substrate; a light emitting structure disposed on the substrate and including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a first electrode electrically connected to the first conductivity type semiconductor layer; a second electrode electrically connected to the second conductivity type semiconductor layer; a first insulation layer disposed on the light emitting structure; a second insulation layer disposed on the first insulation layer; and a first pad and a second pad arranged over the second insulation layer.

6. 发明授权

US10998478B2 Light-emitting element, light-emitting element package comprising light-emitting element, and light-emitting device comprising light-emitting element package 有权
公开(公告)号：US10998478B2
公开(公告)日：2021-05-04
申请号：US15753233
申请日：2016-08-18
申请人： LG INNOTEK CO., LTD.
发明人： Ji Hyung Moon , Woo Sik Lim
IPC分类号： H01L29/45 , H01L21/441 , H01L33/62 , H01L33/38 , H01L33/44 , H01L33/20 , H01L23/00 , H01L31/0304 , H01L31/0352 , H01L33/40 , H01L33/42
摘要： A light-emitting element according to an embodiment comprises: a substrate; a light-emitting structure comprising a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, which are successively arranged on the substrate; and first and second electrodes, which are electrically connected to the first and second conductive semiconductor layers, respectively, wherein the first electrode comprises at least one first contact portion arranged on the first conductive semiconductor layer, which is exposed to at least a part of a first area of the light-emitting structure, and connected to the first conductive semiconductor layer, and a plurality of second contact portions connected to the first conductive semiconductor layer that is exposed in a second area, which is positioned, on a plane, closer to the inner side than the first area of the light-emitting structure, and the second electrode comprises a third contact part, which is arranged in the second area of the light-emitting structure, and which is connected to the second conductive semiconductor layer.

7. 发明授权

US10892390B2 Light-emitting element and light-emitting element package including the same 有权
公开(公告)号：US10892390B2
公开(公告)日：2021-01-12
申请号：US16075490
申请日：2017-02-03
申请人： LG INNOTEK CO., LTD.
发明人： Jae Won Seo , Sang Youl Lee , Woo Sik Lim
IPC分类号： H01L33/62 , H01L33/42 , H01L33/38 , H01L33/40 , H01L33/10 , H01L33/46 , H01L33/32 , H01L33/22
摘要： A light-emitting element according to an embodiment comprises: a light-emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer formed between the first and second conductive type semiconductor layers; a reflective layer formed on the second conductive type semiconductor layer; a capping layer formed on the reflective layer to surround the reflective layer; a first electrode electrically connected with the first conductive type semiconductor layer; a first bonding pad electrically connected with the first electrode; and a second bonding pad electrically connected with the second electrode, wherein the light-emitting structure includes a recess extending to a region of the first conductive type semiconductor layer through the second conductive type semiconductor layer and the active layer; the first electrode is formed within the recess and electrically connected with the first conductive type semiconductor layer, and includes a region bent along a side surface of the second bonding pad; the reflective layer is formed to be spaced apart from the recess; and the capping layer includes a transparent electrode.

8. 发明授权

US10333031B2 Light emitting element and lighting device 有权
公开(公告)号：US10333031B2
公开(公告)日：2019-06-25
申请号：US16215238
申请日：2018-12-10
申请人： LG INNOTEK CO., LTD.
发明人： Woo Sik Lim , Jae Won Seo
IPC分类号： H01L33/46 , H01L33/38 , H01L33/44 , H01L33/48 , H01L33/62 , H01L33/40
摘要： A light emitting element according to an embodiment includes a substrate; a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer which are disposed on the substrate; a reflective layer which is disposed on the light emitting structure and has first and second areas neighboring each other in a horizontal direction; a first electrode which is disposed in at least a portion of the first area of the reflective layer with passing through the second conductive semiconductor layer and the active layer and extending to the first conductive semiconductor layer; a first insulating layer disposed between the first electrode and the side of the light emitting structure and between the first electrode and the reflective layer; a diffusion barrier layer disposed in the second area of the reflective layer; a second insulating layer disposed on the first electrode and the diffusion barrier layer; and first and second bonding layers which pass through the second insulating layer and are connected to the first electrode and the diffusion barrier layer, respectively.

9. 发明授权

US09406844B2 Light emitting device, light emitting device package, and lighting system 有权
标题翻译：发光装置，发光装置封装和照明系统
公开(公告)号：US09406844B2
公开(公告)日：2016-08-02
申请号：US14519780
申请日：2014-10-21
申请人： LG INNOTEK CO., LTD.
发明人： Byeong Kyun Choi , Sung Kyoon Kim , Woo Sik Lim , Sung Ho Choo
IPC分类号： H01L33/62 , H01L33/24 , H01L33/38 , H01L33/20 , H01L33/08
CPC分类号： H01L33/24 , H01L33/08 , H01L33/20 , H01L33/38 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： Provided is a light emitting device. The light emitting device includes a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. A first electrode is connected to the first conductive type semiconductor layer and includes first pad, plurality of first bridge portions and plurality of first contact portions. A current spreading layer is on a top surface of the second conductive type semiconductor layer. An insulation layer is on an upper surface of the first conductive type semiconductor layer and a top surface of the current spreading layer. A second electrode is on a top surface of the current spreading layer. The plurality of first bridge portions are extended from the first pad at an acute angle to each other.
摘要翻译：提供了一种发光装置。发光器件包括发光结构层，其包括第一导电类型半导体层，有源层和第二导电类型半导体层。第一电极连接到第一导电类型半导体层，并且包括第一焊盘，多个第一桥接部分和多个第一接触部分。电流扩散层位于第二导电类型半导体层的顶表面上。绝缘层位于第一导电类型半导体层的上表面和电流扩展层的顶表面上。第二电极位于电流扩展层的顶表面上。多个第一桥接部分彼此以锐角从第一焊盘延伸。

10. 发明授权

US09172015B2 Light emitting device, light emitting device package, and lighting system 有权
标题翻译：发光装置，发光装置封装和照明系统
公开(公告)号：US09172015B2
公开(公告)日：2015-10-27
申请号：US14496490
申请日：2014-09-25
申请人： LG INNOTEK CO., LTD.
发明人： Sung Kyoon Kim , Woo Sik Lim , Myeong Soo Kim , Sung Ho Choo , Min Gyu Na
IPC分类号： H01L33/38 , H01L33/58 , H01L33/00 , H01L33/20 , H01L33/40 , H01L33/42
CPC分类号： H01L33/58 , H01L33/007 , H01L33/20 , H01L33/382 , H01L33/387 , H01L33/405 , H01L33/42 , H01L2224/48091 , H01L2933/0016 , H01L2924/00014
摘要： Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure layer, a second electrode, a first electrode, a contact portion, and a first electrode layer. The first electrode is disposed in the substrate from a lower part of the substrate to a lower part of a first conductive type semiconductor layer in a region under an active layer. The contact portion is wider than the first electrode and makes contact with the lower part of the first conductive type semiconductor layer. The first electrode layer is disposed under the substrate and connected to the first electrode.
摘要翻译：提供了一种发光器件，发光器件封装和照明系统。发光器件包括衬底，发光结构层，第二电极，第一电极，接触部分和第一电极层。第一电极在有源层下方的区域中从基板的下部到第一导电型半导体层的下部设置在基板中。接触部分比第一电极宽，并与第一导电型半导体层的下部接触。第一电极层设置在基板下方并连接到第一电极。

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