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1. 发明申请

US20140261803A1 HIGH STRIP RATE DOWNSTREAM CHAMBER 审中-公开
标题翻译：高速下水箱
公开(公告)号：US20140261803A1
公开(公告)日：2014-09-18
申请号：US13840603
申请日：2013-03-15
申请人： Lam Research Corporation
发明人： Ing-Yann Wang , Jaroslaw W. Winniczek , David J. Cooperberg , Erik A. Edelberg , Robert P. Chebi
IPC分类号： F17D1/02
CPC分类号： F17D1/02 , H01J37/3244 , H01L21/00 , H01L21/67017 , Y10T137/87265
摘要： A gas chamber contains upper and lower chamber bodies forming a cavity, a heating chuck for a wafer, a remote gas source, and an exhaust unit. Gas is injected into the cavity through channels in an injector. Each channel has sections that are bent with respect to each other at a sufficient angle to substantially eliminate entering light rays entering the channel from exiting the channel without reflection. The channels have funnel-shaped nozzles at end points proximate to the chuck. The injector also has thermal expansion relief slots and small gaps between the injector and mating surfaces of the chamber and gas source. The temperature of the injector is controlled by a cooling liquid in cooling channels and electrical heaters in receptacles of the injector. The upper chamber body is funnel-shaped and curves downward at an end of the upper chamber body proximate to the chuck.
摘要翻译：气室包含形成空腔的上下腔体，用于晶片的加热卡盘，远程气体源和排气单元。气体通过注射器中的通道注入空腔。每个通道具有以足够的角度相对于彼此弯曲的部分，以基本上消除进入通道的入射光线而不反射离开通道。通道在靠近卡盘的端点处具有漏斗形喷嘴。注射器还具有热膨胀释放槽和注射器与腔室和气体源的配合表面之间的小间隙。喷射器的温度由冷却通道中的冷却液体和喷射器插座中的电加热器控制。上腔体是漏斗形的，并且在上腔体的靠近卡盘的端部处向下弯曲。

2. 发明授权

US09865472B2 Fabrication of a silicon structure and deep silicon etch with profile control 有权
公开(公告)号：US09865472B2
公开(公告)日：2018-01-09
申请号：US15134144
申请日：2016-04-20
申请人： Lam Research Corporation
发明人： Robert Chebi , Frank Lin , Jaroslaw W. Winniczek , Wan-Lin Chen , Erin Moore , Lily Zheng , Stephan Lassig , Jeff Bogart , Camelia Rusu
IPC分类号： H01L21/302 , H01L21/461 , H01L21/3065 , H01J37/32 , H01L21/02 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/3244 , H01J37/32449 , H01J2237/334 , H01L21/02057 , H01L21/30655 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/32137
摘要： A method of etching features into a silicon layer with a steady-state gas flow is provided. An etch gas comprising an oxygen containing gas and a fluorine containing gas is provided. A plasma is provided from the etch gas. Then, the flow of the etch gas is stopped.

3. 发明授权

US08425682B2 High strip rate downstream chamber 有权
标题翻译：高速下游室
公开(公告)号：US08425682B2
公开(公告)日：2013-04-23
申请号：US13624558
申请日：2012-09-21
申请人： Lam Research Corporation
发明人： Ing-Yann Wang , Jaroslaw W. Winniczek , David J. Cooperberg , Erik A. Edelberg , Robert P. Chebi
IPC分类号： C23C16/455 , C23C16/458 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32449 , H01J37/32357 , H01J37/3244 , Y10T137/0318 , Y10T137/85938
摘要： A gas chamber contains upper and lower chamber bodies forming a cavity, a heating chuck for a wafer, a remote gas source, and an exhaust unit. Gas is injected into the cavity through channels in an injector. Each channel has sections that are bent with respect to each other at a sufficient angle to substantially eliminate entering light rays entering the channel from exiting the channel without reflection. The channels have funnel-shaped nozzles at end points proximate to the chuck. The injector also has thermal expansion relief slots and small gaps between the injector and mating surfaces of the chamber and gas source. The temperature of the injector is controlled by a cooling liquid in cooling channels and electrical heaters in receptacles of the injector. The upper chamber body is funnel-shaped and curves downward at an end of the upper chamber body proximate to the chuck.
摘要翻译：气室包含形成空腔的上下腔体，用于晶片的加热卡盘，远程气体源和排气单元。气体通过注射器中的通道注入空腔。每个通道具有以足够的角度相对于彼此弯曲的部分，以基本上消除进入通道的入射光线而不反射离开通道。通道在靠近卡盘的端点处具有漏斗形喷嘴。注射器还具有热膨胀释放槽和注射器与腔室和气体源的配合表面之间的小间隙。喷射器的温度由冷却通道中的冷却液体和喷射器插座中的电加热器控制。上腔体是漏斗形的，并且在上腔体的靠近卡盘的端部处向下弯曲。

4. 发明申请

US20130025693A1 HIGH STRIP RATE DOWNSTREAM CHAMBER 有权
标题翻译：高速下水箱
公开(公告)号：US20130025693A1
公开(公告)日：2013-01-31
申请号：US13624558
申请日：2012-09-21
申请人： Lam Research Corporation
发明人： Ing-Yann Wang , Jaroslaw W. Winniczek , David J. Cooperberg , Erik A. Edelberg , Robert P. Chebi
IPC分类号： F16L41/00
CPC分类号： H01J37/32449 , H01J37/32357 , H01J37/3244 , Y10T137/0318 , Y10T137/85938
摘要： A gas chamber contains upper and lower chamber bodies forming a cavity, a heating chuck for a wafer, a remote gas source, and an exhaust unit. Gas is injected into the cavity through channels in an injector. Each channel has sections that are bent with respect to each other at a sufficient angle to substantially eliminate entering light rays entering the channel from exiting the channel without reflection. The channels have funnel-shaped nozzles at end points proximate to the chuck. The injector also has thermal expansion relief slots and small gaps between the injector and mating surfaces of the chamber and gas source. The temperature of the injector is controlled by a cooling liquid in cooling channels and electrical heaters in receptacles of the injector. The upper chamber body is funnel-shaped and curves downward at an end of the upper chamber body proximate to the chuck.
摘要翻译：气室包含形成空腔的上下腔体，用于晶片的加热卡盘，远程气体源和排气单元。气体通过注射器中的通道注入空腔。每个通道具有以足够的角度相对于彼此弯曲的部分，以基本上消除进入通道的入射光线而不反射离开通道。通道在靠近卡盘的端点处具有漏斗形喷嘴。注射器还具有热膨胀释放槽和注射器与腔室和气体源的配合表面之间的小间隙。喷射器的温度由冷却通道中的冷却液体和喷射器插座中的电加热器控制。上腔体是漏斗形的，并且在上腔体的靠近卡盘的端部处向下弯曲。

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