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1. 发明申请

US20160181111A1 SILICON ETCH AND CLEAN 审中-公开
标题翻译：硅蚀刻和清洁
公开(公告)号：US20160181111A1
公开(公告)日：2016-06-23
申请号：US14576978
申请日：2014-12-19
申请人： Lam Research Corporation
发明人： Tom A. Kamp , Alexander M. Paterson , Neema Rastgar
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/67
CPC分类号： H01L21/3065 , H01J37/32082 , H01J37/32449 , H01J37/32926 , H01J2237/334 , H01L21/02057 , H01L21/02071 , H01L21/32137
摘要： A method for etching features into a silicon containing etch layer is provided. The etch layer is placed into a plasma processing chamber. An etch gas is flowed into the plasma processing chamber. The etch gas is formed into an etch plasma, wherein the etch plasma etches features into the silicon containing layer leaving silicon containing residue. The flow of etch gas into the plasma processing chamber is stopped. A dry clean gas is flowed into the plasma processing chamber, wherein the dry clean gas comprises NH3 and NF3. The dry clean gas is formed into a plasma, wherein the silicon containing residue is exposed to the dry clean gas plasma, and wherein at least some or all of the silicon containing residue is formed into ammonium containing compounds. The flow of the dry clean gas is stopped. The ammonium compounds are sublimated from the films.
摘要翻译：提供了将特征蚀刻到含硅蚀刻层中的方法。将蚀刻层放置在等离子体处理室中。蚀刻气体流入等离子体处理室。蚀刻气体形成为蚀刻等离子体，其中蚀刻等离子体蚀刻到含硅层中，留下含硅残留物。停止进入等离子体处理室的蚀刻气体的流动。干净的气体流入等离子体处理室，其中干净的气体包括NH 3和NF 3。将干燥的干燥气体形成为等离子体，其中将含硅残渣暴露于干燥清洁气体等离子体中，并且其中至少部分或全部含硅残渣形成含铵化合物。干燥气体的流动停止。铵化合物从膜中升华。

2. 发明授权

US11538713B2 System and method for edge ring wear compensation 有权
公开(公告)号：US11538713B2
公开(公告)日：2022-12-27
申请号：US16769681
申请日：2018-11-30
申请人： LAM RESEARCH CORPORATION
发明人： Tom A. Kamp , Carlos Leal-Verdugo
IPC分类号： H01L21/68 , H01L21/67 , H01L21/687
摘要： A controller for adjusting a height of an edge ring in a substrate processing system includes an edge ring wear calculation module configured to receive at least one input indicative of one or more erosion rates of the edge ring, calculate at least one erosion rate of the edge ring based on the at least one input, and calculate an amount of erosion of the edge ring based on the at least one erosion rate. An actuator control module is configured to adjust the height of the edge ring based on the amount of erosion as calculated by the edge ring wear calculation module.

3. 发明申请

US20220270863A1 MOVEABLE EDGE RINGS WITH REDUCED CAPACITANCE VARIATION FOR SUBSTRATE PROCESSING SYSTEMS 有权
公开(公告)号：US20220270863A1
公开(公告)日：2022-08-25
申请号：US17671211
申请日：2022-02-14
申请人： LAM RESEARCH CORPORATION
发明人： Christopher Kimball , Hema Swaroop Mopidevi , Saravanapriyan Sriraman , Tom A. Kamp , Darrell Ehrlich , Anthony Contreras , Chiara Helena Catherina Giammanco Macpherson
IPC分类号： H01J37/32 , H01L21/687
摘要： A moveable edge ring system for a plasma processing system includes a top edge ring and a first edge ring arranged below the top edge ring. A second edge ring is made of conductive material and includes an upper portion, a middle portion and a lower portion. The top edge ring and the second edge ring are configured to move in a vertical direction relative to a substrate support and the first edge ring when biased upwardly by a lift pin. The second edge ring is arranged below the top edge ring and radially outside of the first edge ring.

4. 发明授权

US10600648B2 Silicon-based deposition for semiconductor processing 有权
公开(公告)号：US10600648B2
公开(公告)日：2020-03-24
申请号：US15492662
申请日：2017-04-20
申请人： Lam Research Corporation
发明人： Tom A. Kamp , Mirzafer K. Abatchev
IPC分类号： H01L21/033 , H01L21/02 , H01L21/311 , H01J37/32 , H01L21/3213
摘要： A method for processing a stack with a carbon based patterned mask is provided. The stack is placed in an etch chamber. A silicon oxide layer is deposited by atomic layer deposition over the carbon based patterned mask by providing a plurality of cycles, wherein each of the cycles of the plurality of cycles, comprises providing a silicon precursor deposition phase, comprising flowing an atomic layer deposition precursor gas into the etch chamber, where the atomic layer deposition precursor gas is deposited while plasmaless and stopping the flow of the atomic layer deposition precursor gas and providing an oxygen deposition phase, comprising flowing ozone gas into the etch chamber, wherein the ozone gas binds with the deposited precursor gas while plasmaless and stopping the flow of ozone gas into the etch chamber. Part of the silicon oxide layer is etched. The stack is removed from the etch chamber.

5. 发明申请

US20190043728A1 INTEGRATED ATOMIC LAYER PASSIVATION IN TCP ETCH CHAMBER AND IN-SITU ETCH-ALP METHOD 审中-公开
公开(公告)号：US20190043728A1
公开(公告)日：2019-02-07
申请号：US15669871
申请日：2017-08-04
申请人： Lam Research Corporation
发明人： Xiang Zhou , Tom A. Kamp , Yoshie Kimura , Duming Zhang , Chen Xu , John Drewery , Alex Paterson
IPC分类号： H01L21/3065 , H01L21/67 , H01J37/32
摘要： A method for etching a substrate includes performing, in a plasma chamber, a first etch of a substrate material using a plasma etch process. The first etch forms features to a first depth in the material. Following the first etch, the method includes performing, in the plasma chamber without removing the substrate from the chamber, an atomic layer passivation (ALP) process to deposit a conformal film of passivation over the mask and the features formed during the first etch. The ALP process uses a vapor from a liquid precursor to form passivation over the features and the mask. The method further includes performing, in the plasma chamber, a second etch of the material using the plasma etch process. The conformal film of passivation is configured to protect the mask and sidewalls of the features during the second etch. A plasma processing system also is described.

6. 发明授权

US09711359B2 Shadow trim line edge roughness reduction 有权
公开(公告)号：US09711359B2
公开(公告)日：2017-07-18
申请号：US14826088
申请日：2015-08-13
申请人： Lam Research Corporation
发明人： Tom A. Kamp , Rodolfo P. Belen, Jr.
IPC分类号： H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/033 , H01L21/311 , H01L21/027 , H01L21/02 , H01L21/3065 , H01L21/308
CPC分类号： H01L21/0338 , H01L21/02164 , H01L21/0217 , H01L21/0276 , H01L21/0332 , H01L21/0335 , H01L21/0337 , H01L21/3065 , H01L21/308 , H01L21/3081 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/31144
摘要： A method for etching an etch layer in a stack over a substrate wherein the etch layer is under a mask layer which is under a patterned organic mask is provided. The stack and substrate is placed on a support in the plasma chamber. A silicon based layer is deposited in situ over the stack. The silicon based layer is etched to form silicon based sidewalls or spacers on sides of the patterned organic mask. The mask layer is selectively etched with respect to the silicon based sidewalls or spacers, wherein the selectively etching the mask layer undercuts the silicon based sidewalls or spacers. The etch layer is selectively etched with respect to the mask layer. The stack and substrate are removed from the support and the plasma chamber.

7. 发明授权

US10950454B2 Integrated atomic layer passivation in TCP etch chamber and in-situ etch-ALP method 有权
公开(公告)号：US10950454B2
公开(公告)日：2021-03-16
申请号：US15669871
申请日：2017-08-04
申请人： Lam Research Corporation
发明人： Xiang Zhou , Tom A. Kamp , Yoshie Kimura , Duming Zhang , Chen Xu , John Drewery , Alex Paterson
IPC分类号： H01L21/3065 , H01L21/67 , H01J37/32
摘要： A method for etching a substrate includes performing, in a plasma chamber, a first etch of a substrate material using a plasma etch process. The first etch forms features to a first depth in the material. Following the first etch, the method includes performing, in the plasma chamber without removing the substrate from the chamber, an atomic layer passivation (ALP) process to deposit a conformal film of passivation over the mask and the features formed during the first etch. The ALP process uses a vapor from a liquid precursor to form passivation over the features and the mask. The method further includes performing, in the plasma chamber, a second etch of the material using the plasma etch process. The conformal film of passivation is configured to protect the mask and sidewalls of the features during the second etch. A plasma processing system also is described.

8. 发明申请

US20210287909A1 INTEGRATED ATOMIC LAYER PASSIVATION IN TCP ETCH CHAMBER AND IN-SITU ETCH-ALP METHOD 有权
公开(公告)号：US20210287909A1
公开(公告)日：2021-09-16
申请号：US17200526
申请日：2021-03-12
申请人： Lam Research Corporation
发明人： Xiang Zhou , Tom A. Kamp , Yoshie Kimura , Duming Zhang , Chen Xu , John Drewery , Alex Paterson
IPC分类号： H01L21/3065 , H01L21/67 , H01J37/32
摘要： A plasma processing system includes a chamber having a coil disposed above a dielectric window for providing radio frequency power to the processing region. An etch gas delivery system is coupled to gas sources used for a first etch of a material. A liquid delivery system includes a source of liquid precursor, a liquid flow controller, and a vaporizer. A controller activates the etch gas delivery system to perform the first etch and activates the liquid delivery system to perform an atomic layer passivation (ALP) process after the first etch to coat features with a conformal film of passivation. Each time the ALP process is completed a single atomic monolayer of the conformal film of passivation is formed. The controller activates the etch gas delivery system to perform a second etch, with the conformal film of passivation protecting the mask and sidewalls of the features during the second etch.

9. 发明授权

US11031215B2 Vacuum pump protection against deposition byproduct buildup 有权
公开(公告)号：US11031215B2
公开(公告)日：2021-06-08
申请号：US16584095
申请日：2019-09-26
申请人： Lam Research Corporation
发明人： John Stephen Drewery , Tom A. Kamp , Haoquan Yan , John Edward Daugherty , Ali Sucipto Tan , Ming-Kuei Tseng , Bruce Edmund Freeman
IPC分类号： H01J37/32 , H01L21/02 , H01L21/311 , H01L21/67 , C23C16/02 , C23C16/455 , C23C16/44 , H01L21/683
摘要： A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

10. 发明授权

US10163610B2 Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation 有权
公开(公告)号：US10163610B2
公开(公告)日：2018-12-25
申请号：US15067068
申请日：2016-03-10
申请人： Lam Research Corporation
发明人： Saravanapriyan Sriraman , Tom A. Kamp , Alexander Paterson
IPC分类号： H01J37/32 , H01L21/67 , H01L21/683
摘要： An edge ring assembly for a plasma processing chamber is provided, including: an edge ring configured to surround an electrostatic chuck (ESC) that is configured for electrical connection to a first RF power supply, the ESC having a top surface for supporting a substrate and an annular step surrounding the top surface, the annular step defining an annular shelf that is lower than the top surface; an annular electrode disposed below the edge ring in the annular step and above the annular shelf; a dielectric ring disposed below the annular electrode for isolating the annular electrode from the ESC, the dielectric ring positioned in the annular step over the annular shelf; and, a plurality of insulated connectors disposed through the ESC and through the dielectric ring, each of the plurality of insulated connectors providing electrical connection between a second RF power supply and the annular electrode.

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