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    • 3. 发明授权
    • Method for constructing heat resistant electrode structures on silicon substrates
    • 硅衬底上耐热电极结构的制造方法
    • US06417110B1
    • 2002-07-09
    • US08918598
    • 1997-08-23
    • Leonard L. Boyer
    • Leonard L. Boyer
    • H01L21311
    • H01L28/60
    • A method for constructing an electrode on a silicon substrate in which the electrode will be subjected to high temperatures during subsequent processing steps. A titanium oxide layer is deposited on the silicon substrate and annealed at a temperature higher than any subsequent temperature to which the titanium oxide layer will be subjected. The electrode is then deposited on the titanium oxide layer. The electrode is preferably platinum or a titanium/platinum composition. The platinum is also annealed to a temperature higher than any subsequent temperature to which the electrode will be subjected. In the preferred embodiment of the present invention, the electrode is constructed in a trench that is etched in a layer of metallic titanium that is deposited over the titanium oxide layer.
    • 一种用于在硅衬底上构造电极的方法,其中在随后的处理步骤期间电极将经受高温。 氧化钛层沉积在硅衬底上并在高于氧化钛层将要经受的任何后续温度的温度下退火。 然后将电极沉积在氧化钛层上。 电极优选为铂或钛/铂组合物。 铂还退火到高于电极将经受的任何随后的温度的温度。 在本发明的优选实施例中,电极被构造成在被沉积在氧化钛层上的金属钛层中被蚀刻的沟槽中。