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1. 发明授权

US07683378B2 Light emitting diode and method for fabricating same 失效
标题翻译：发光二极管及其制造方法
公开(公告)号：US07683378B2
公开(公告)日：2010-03-23
申请号：US11359528
申请日：2006-02-23
申请人： Manabu Kako , Takehiko Tani , Taiichiro Konno , Masahiro Arai
发明人： Manabu Kako , Takehiko Tani , Taiichiro Konno , Masahiro Arai
IPC分类号： H01L33/00
CPC分类号： H01L33/10 , H01L33/30
摘要： An AlGaInP based light emitting diode is provided with a distributed Bragg reflector comprising a combination of an AlGaAs layer and an AlInP layer, each having a film thickness determined by following formulas (1) to (3): t1={λ0/(4×n1)}×α (1), t2={λ0/(4×n2)}×(2−α) (2), and 0.5
摘要翻译：基于AlGaInP的发光二极管设置有分布式布拉格反射器，其包括AlGaAs层和AlInP层的组合，每层具有由下式（1）至（3）确定的膜厚：t1 = {λ0/（4× n1）}×α（1），t2 = {λ0/（4×n2）}×（2-α）（2）和0.5 <α<0.9（3）其中t1是膜厚[nm] AlGaAs层，t2是AlInP层的膜厚度[nm]，λ0是被反射光的波长[nm]，n1是AlGaAs层相对于要反射的光的波长的折射率，以及 n2是AlInP层相对于要反射的光的波长的折射率。

2. 发明申请

US20060192211A1 Light emitting diode and method for fabricating same 失效
标题翻译：发光二极管及其制造方法
公开(公告)号：US20060192211A1
公开(公告)日：2006-08-31
申请号：US11359528
申请日：2006-02-23
申请人： Manabu Kako , Takehiko Tani , Taiichiro Konno , Masahiro Arai
发明人： Manabu Kako , Takehiko Tani , Taiichiro Konno , Masahiro Arai
IPC分类号： H01L33/00
CPC分类号： H01L33/10 , H01L33/30
摘要： An AlGaInP based light emitting diode is provided with a distributed Bragg reflector comprising a combination of an AlGaAs layer and an AlInP layer, each having a film thickness determined by following formulas (1) to (3): t1={λ0/(4×n1)}×α (1), t2={λ0/(4×n2)}×(2−α) (2), and 0.5
摘要翻译：基于AlGaInP的发光二极管设置有分布式布拉格反射器，其包括AlGaAs层和AlInP层的组合，每层具有由下式（1）至（3）确定的膜厚度：<？在线公式描述 =“In-line Formulas”end =“lead”？> t 1 =（λ1/2）} xalpha（1 ），<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> t < 2（2-α）（2）和<β在线公式描述=“2” 在线公式“end =”tail“？> <？in-line-formula description =”In-line Formulas“end =”lead“？> 0.5 <α<0.9（3）<？ =“In-line Formulas”end =“tail”？>其中t 1是AlGaAs层的膜厚度[nm]，t 2是膜厚度[ AlInP层的λnm是反射光的波长[nm]，n 1是AlGaAs层的折射率呃是要被反射的光的波长，n 2是AlInP层相对于被反射光的波长的折射率。

3. 发明申请

US20070069196A1 Epitaxial wafer for LED and light emitting diode 审中-公开
标题翻译：用于LED和发光二极管的外延晶片
公开(公告)号：US20070069196A1
公开(公告)日：2007-03-29
申请号：US11377431
申请日：2006-03-17
申请人： Manabu Kako , Takehiko Tani
发明人： Manabu Kako , Takehiko Tani
IPC分类号： H01L29/06
CPC分类号： H01L33/14 , H01L33/22 , H01L33/30
摘要： An epitaxial wafer for a light emitting diode has: a light-emitting portion having a n-type cladding layer, a p-type cladding layer and an active layer formed between the n-type cladding layer and the p-type cladding layer, the light-emitting portion being formed on a n-type substrate; and a p-type GaP current spreading layer formed on the light-emitting portion. The p-type GaP current spreading layer is doped with Mg and has a root mean square roughness Rms of 15 nm to 5 μm on its surface.
摘要翻译：用于发光二极管的外延晶片具有：具有n型包覆层，p型包覆层和形成在n型包覆层和p型覆层之间的有源层的发光部，发光部分形成在n型衬底上; 以及形成在发光部上的p型GaP电流扩散层。 p型GaP电流扩展层掺杂有Mg，并且其表面上的均方根粗糙度Rms为15nm至5μm。

4. 发明申请

US20050205836A1 Grinding abrasive grains, abrasive, abrasive solution, abrasive solution preparation method, grinding method, and semiconductor device fabrication method 有权
标题翻译：研磨磨料，研磨剂，磨料溶液，研磨剂制备方法，研磨方法和半导体器件制造方法
公开(公告)号：US20050205836A1
公开(公告)日：2005-09-22
申请号：US11071589
申请日：2005-03-04
申请人： Chie Yoshizawa , Satoshi Uematsu , Hisashi Mashiyama , Takehiko Tani
发明人： Chie Yoshizawa , Satoshi Uematsu , Hisashi Mashiyama , Takehiko Tani
IPC分类号： B24B37/00 , B24D99/00 , B44C1/22 , C09K3/14 , C09K13/00 , H01L21/302 , H01L21/304 , H01L21/306
CPC分类号： H01L21/30625 , B24B37/044 , C09K3/1409 , C09K3/1463 , H01L21/02013
摘要： Abrasive grains have mainly grains with a roundness of 0.50 or more and 0.75 or less, where the roundness is defined as the ratio of the circumference of a circle having the same area as that of a grain to the perimeter of that grain. An abrasive has the abrasive grains and at least one of an oxidizer, an oxide solution, an abrasive grain dispersion agent and a basic compound. An abrasive solution has the abrasive grains and water or hydrophilic substance.
摘要翻译：磨粒主要是圆度为0.50以上且0.75以下的圆形，其中圆度被定义为具有与颗粒相同面积的圆的周长与该颗粒的周长的比率。磨料具有磨粒和氧化剂，氧化物溶液，磨粒分散剂和碱性化合物中的至少一种。磨料溶液具有磨粒和水或亲水性物质。

5. 发明申请

US20110003413A1 MANUFACTURING METHOD OF SEMICONDUCTOR PHOTONIC DEVICE SUBSTRATE 有权
标题翻译：半导体光电器件基板的制造方法
公开(公告)号：US20110003413A1
公开(公告)日：2011-01-06
申请号：US12766684
申请日：2010-04-23
申请人： Toshihiro Morisawa , Takehiko Tani , Hisataka Nagai , Takashi Furuya
发明人： Toshihiro Morisawa , Takehiko Tani , Hisataka Nagai , Takashi Furuya
IPC分类号： H01L21/20
CPC分类号： C23C16/56 , H01L21/02395 , H01L21/02543 , H01L33/007 , H01L33/46
摘要： In a manufacturing method of a semiconductor photonic device substrate, before multi-layer films different in material composition are successively and gradually crystal-grown in one chamber, an inter-layer growth rate model showing a relation in growth rate between each layer is defined, a growth rate of a film corresponding to at least one or more layers is obtained by actual crystal growth using an individual substrate, a growth rate of a film corresponding to other layers is estimated from the obtained growth rate by the inter-layer growth rate model, and a growth time is determined in accordance with a film thickness of each layer of the semiconductor photonic device substrate based on the actually obtained growth rate and the estimated growth rate. These steps are carried out by using a computer system connected to an MOCVD equipment, and then, a crystal growth of the semiconductor photonic device substrate is performed.
摘要翻译：在半导体光子器件衬底的制造方法中，在不同材料组成的多层膜在一个室中连续逐渐晶体生长的情况下，定义表示各层之间的生长速度关系的层间生长速率模型，通过使用单个基板的实际晶体生长获得对应于至少一个或多个层的膜的生长速率，通过层间生长速率模型从获得的生长速率估计与其它层相对应的膜的生长速率根据实际获得的生长速度和估计的生长速度，根据半导体光子器件基板的各层的膜厚确定生长时间。这些步骤通过使用连接到MOCVD设备的计算机系统进行，然后执行半导体光子器件衬底的晶体生长。

6. 发明授权

US08120050B2 Light-emitting element 有权
标题翻译：发光元件
公开(公告)号：US08120050B2
公开(公告)日：2012-02-21
申请号：US12585494
申请日：2009-09-16
申请人： Taichiroo Konno , Takehiko Tani
发明人： Taichiroo Konno , Takehiko Tani
IPC分类号： H01L33/00
CPC分类号： H01L33/10
摘要： A light-emitting element includes a semiconductor substrate, a light emitting layer portion including an active layer on the semiconductor substrate, a first reflective layer between the semiconductor substrate and the active layer for reflecting light emitted from the active layer; and a second reflective layer between the semiconductor substrate and the first reflective layer for reflecting light with a wavelength different from that of the light reflected by the first reflective layer. The second reflective layer reflects light with a wavelength longer than that of the light reflected by the first reflective layer.
摘要翻译：发光元件包括半导体衬底，在半导体衬底上包括有源层的发光层部分，在半导体衬底和有源层之间的第一反射层，用于反射从有源层发射的光; 以及在所述半导体衬底和所述第一反射层之间的第二反射层，用于反射与由所述第一反射层反射的光的波长不同的波长的光。第二反射层反射的波长比由第一反射层反射的光的波长长。

7. 发明申请

US20100252849A1 Light-emitting element 有权
标题翻译：发光元件
公开(公告)号：US20100252849A1
公开(公告)日：2010-10-07
申请号：US12585494
申请日：2009-09-16
申请人： Taichiroo Konno , Takehiko Tani
发明人： Taichiroo Konno , Takehiko Tani
IPC分类号： H01L33/00
CPC分类号： H01L33/10
摘要： A light-emitting element includes a semiconductor substrate, a light emitting layer portion including an active layer on the semiconductor substrate, a first reflective layer between the semiconductor substrate and the active layer for reflecting light emitted from the active layer; and a second reflective layer between the semiconductor substrate and the first reflective layer for reflecting light with a wavelength different from that of the light reflected by the first reflective layer. The second reflective layer reflects light with a wavelength longer than that of the light reflected by the first reflective layer.
摘要翻译：发光元件包括半导体衬底，在半导体衬底上包括有源层的发光层部分，在半导体衬底和有源层之间的第一反射层，用于反射从有源层发射的光; 以及在所述半导体衬底和所述第一反射层之间的第二反射层，用于反射与由所述第一反射层反射的光的波长不同的波长的光。第二反射层反射的波长比由第一反射层反射的光的波长长。

8. 发明申请

US20060185688A1 Semiconductor wafer cleaning method and wafer cleaned by same method 审中-公开
标题翻译：半导体晶片清洗方法和晶圆清洗方法相同
公开(公告)号：US20060185688A1
公开(公告)日：2006-08-24
申请号：US11324228
申请日：2006-01-04
申请人： Satoshi Uematsu , Hisashi Mashiyama , Takehiko Tani
发明人： Satoshi Uematsu , Hisashi Mashiyama , Takehiko Tani
IPC分类号： C23G1/00 , B08B7/04 , B08B3/00
CPC分类号： H01L21/02052
摘要： A semiconductor wafer cleaning method has steps of cleaning a surface of a semiconductor wafer with a cleaning solution that has an etching function; and cleaning the surface of the semiconductor wafer with a high-purity organic solvent while circulating the high-purity organic solvent so as to remove Ca and Mg on the surface of the semiconductor wafer.
摘要翻译：半导体晶片清洗方法具有用具有蚀刻功能的清洗液清洗半导体晶片的表面的步骤; 并在循环高纯度有机溶剂的同时用高纯度有机溶剂清洗半导体晶片的表面，以除去半导体晶片表面上的Ca和Mg。

9. 发明授权

US08367431B2 Manufacturing method of semiconductor photonic device substrate 有权
标题翻译：半导体光子器件衬底的制造方法
公开(公告)号：US08367431B2
公开(公告)日：2013-02-05
申请号：US12766684
申请日：2010-04-23
申请人： Toshihiro Morisawa , Takehiko Tani , Hisataka Nagai , Takashi Furuya
发明人： Toshihiro Morisawa , Takehiko Tani , Hisataka Nagai , Takashi Furuya
IPC分类号： G01R31/26
CPC分类号： C23C16/56 , H01L21/02395 , H01L21/02543 , H01L33/007 , H01L33/46
摘要： In a manufacturing method of a semiconductor photonic device substrate, before multi-layer films different in material composition are successively and gradually crystal-grown in one chamber, an inter-layer growth rate model showing a relation in growth rate between each layer is defined, a growth rate of a film corresponding to at least one or more layers is obtained by actual crystal growth using an individual substrate, a growth rate of a film corresponding to other layers is estimated from the obtained growth rate by the inter-layer growth rate model, and a growth time is determined in accordance with a film thickness of each layer of the semiconductor photonic device substrate based on the actually obtained growth rate and the estimated growth rate. These steps are carried out by using a computer system connected to an MOCVD equipment, and then, a crystal growth of the semiconductor photonic device substrate is performed.
摘要翻译：在半导体光子器件衬底的制造方法中，在不同材料组成的多层膜在一个室中连续逐渐晶体生长的情况下，定义表示各层之间的生长速度关系的层间生长速率模型，通过使用单个基板的实际晶体生长获得对应于至少一个或多个层的膜的生长速率，通过层间生长速率模型从获得的生长速率估计与其它层相对应的膜的生长速率根据实际获得的生长速度和估计的生长速度，根据半导体光子器件基板的各层的膜厚确定生长时间。这些步骤通过使用连接到MOCVD设备的计算机系统进行，然后执行半导体光子器件衬底的晶体生长。

10. 发明授权

US07267604B2 Grinding abrasive grains, abrasive, abrasive solution, abrasive solution preparation method, grinding method, and semiconductor device fabrication method 有权
标题翻译：研磨磨料，研磨剂，磨料溶液，研磨剂制备方法，研磨方法和半导体器件制造方法
公开(公告)号：US07267604B2
公开(公告)日：2007-09-11
申请号：US11071589
申请日：2005-03-04
申请人： Chie Yoshizawa , Satoshi Uematsu , Hisashi Mashiyama , Takehiko Tani
发明人： Chie Yoshizawa , Satoshi Uematsu , Hisashi Mashiyama , Takehiko Tani
IPC分类号： B24D17/00
CPC分类号： H01L21/30625 , B24B37/044 , C09K3/1409 , C09K3/1463 , H01L21/02013
摘要： Abrasive grains have mainly grains with a roundness of 0.50 or more and 0.75 or less, where the roundness is defined as the ratio of the circumference of a circle having the same area as that of a grain to the perimeter of that grain. An abrasive has the abrasive grains and at least one of an oxidizer, an oxide solution, an abrasive grain dispersion agent and a basic compound. An abrasive solution has the abrasive grains and water or hydrophilic substance.
摘要翻译：磨粒主要是圆度为0.50以上且0.75以下的圆形，其中圆度被定义为具有与颗粒相同面积的圆的周长与该颗粒的周长的比率。磨料具有磨粒和氧化剂，氧化物溶液，磨粒分散剂和碱性化合物中的至少一种。磨料溶液具有磨粒和水或亲水性物质。

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