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1. 发明申请

US20110210710A1 STEP-UP DC-DC CONVERTER AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 审中-公开
标题翻译：升压DC-DC转换器和半导体集成电路器件
公开(公告)号：US20110210710A1
公开(公告)日：2011-09-01
申请号：US12987114
申请日：2011-01-08
申请人： Masahiko YAMAMOTO , Takao Okazaki
发明人： Masahiko YAMAMOTO , Takao Okazaki
IPC分类号： G05F1/565
CPC分类号： H02M3/156 , H02M2001/0032 , Y02B70/16
摘要： A semiconductor integrated circuit device includes: a semiconductor switching element; an input voltage detection circuit that outputs a voltage correlated to an input voltage; an oscillator circuit that oscillates on the basis of the voltage outputted by the input voltage detection circuit; a control logic that generates a drive signal; a power supply circuit that boosts a battery voltage; a buffer that level-shifts the drive voltage outputted by the control logic; and an amplification element that operates using a voltage generated by the semiconductor switching element as a power supply. Thus, the semiconductor switching element can be on/off controlled so that switching loss at low load can be reduced while preventing the peak current flowing into the inductor coil from depending on the input voltage.
摘要翻译：半导体集成电路器件包括：半导体开关元件; 输入电压检测电路，其输出与输入电压相关的电压; 基于输入电压检测电路输出的电压进行振荡的振荡电路; 产生驱动信号的控制逻辑; 提供电池电压的电源电路; 缓冲器，其对由控制逻辑输出的驱动电压进行电平移位; 以及使用由半导体开关元件产生的电压作为电源进行工作的放大元件。因此，可以对半导体开关元件进行开/关控制，使得能够降低低负载时的开关损耗，同时防止根据输入电压流入电感线圈的峰值电流。

2. 发明申请

US20100301824A1 STEP-UP DC/DC SWITCHING CONVERTER AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 审中-公开
标题翻译：升压型DC / DC开关转换器和半导体集成电路器件
公开(公告)号：US20100301824A1
公开(公告)日：2010-12-02
申请号：US12786263
申请日：2010-05-24
申请人： Masahiko YAMAMOTO , Takao Okazaki
发明人： Masahiko YAMAMOTO , Takao Okazaki
IPC分类号： G05F1/46
CPC分类号： H02M3/156
摘要： A step-up DC/DC converter having a step-up circuit which can performs a stable control without depending on a logic threshold of a semiconductor switching device and a semiconductor integrated circuit device having the step-up DC/DC converter are provided. The step-up DC/DC converter includes: a control logic which generates a driving voltage to be supplied to a semiconductor switching device; a power supply circuit which steps-up a battery voltage to perform a level shift of the driving voltage output by the control logic; and an amplifier operated with using a voltage generated by the semiconductor switching device as a power supply. Since the level-shifted semiconductor switching device control signal is higher than a logic threshold voltage of the semiconductor switching device, the ON/OFF of the semiconductor switching device can be controlled.
摘要翻译：提供了一种具有升压电路的升压DC / DC转换器，其可以执行稳定的控制而不依赖于半导体开关器件的逻辑阈值和具有升压型DC / DC转换器的半导体集成电路器件。升压DC / DC转换器包括：产生要提供给半导体开关器件的驱动电压的控制逻辑; 电源电路，其升高电池电压，以执行由所述控制逻辑输出的驱动电压的电平偏移; 以及使用由半导体开关器件产生的电压作为电源进行工作的放大器。由于电平移位半导体开关器件控制信号高于半导体开关器件的逻辑阈值电压，因此可以控制半导体开关器件的导通/截止。

3. 发明申请

US20120157016A1 TRANSMITTER, RF TRANSMITTER SIGNAL PROCESSOR AND METHOD FOR OPERATION OF TRANSMITTER 有权
标题翻译：发射机，射频发射机信号处理器和发射机的操作方法
公开(公告)号：US20120157016A1
公开(公告)日：2012-06-21
申请号：US13404530
申请日：2012-02-24
申请人： Hiroaki MATSUI , Yasuo SHIMA , Yasuyuki KIMURA , Masahiko YAMAMOTO
发明人： Hiroaki MATSUI , Yasuo SHIMA , Yasuyuki KIMURA , Masahiko YAMAMOTO
IPC分类号： H04B1/02
CPC分类号： H04W52/52 , H03G3/3047 , H04L27/361
摘要： An internal operation of RF IC is adjusted so that the level of an RF transmitter signal is substantially stopped from rising, or made to descend in course of ramp-up of the RF transmitter signal. This adjustment is enabled by ramp-up adjustment data Last 4 symbols contained in preamble data precedent to real transmission data transmitted after completion of ramp-up. The ramp-up adjustment data and real transmission data are supplied from a baseband LSI. The RF transmitter signal contains phase and amplitude modulation components according to the EDGE system. RF IC includes phase and amplitude modulation control loops PM LP and AM LP. Ramp-up of RF power amplifiers PA1 and PA2 is performed by controlling the gain of the first variable amplifier MVGA included in the AM LP according to ramp information. Thus, unwanted radiation's level is reduced during ramp-up of the RF transmitter signal of the RF power amplifiers.
摘要翻译：调整RF IC的内部操作，使得RF发射器信号的电平基本上停止上升，或者在RF发射器信号的上升过程中下降。该调整通过斜坡调整数据启用，最后4个符号包含在完成斜坡后发送的实际传输数据的前导数据先例中。从基带LSI提供斜升调整数据和实际发送数据。 RF发射机信号包含根据EDGE系统的相位和幅度调制分量。 RF IC包括相位和幅度调制控制环路PM LP和AM LP。通过根据斜坡信息控制AM LP中包括的第一可变放大器MVGA的增益来执行RF功率放大器PA1和PA2的上升。因此，在RF功率放大器的RF发射器信号的斜坡上升期间，有害辐射的电平被降低。

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