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1. 发明授权

US10514504B2 Waveguide formation using CMOS fabrication techniques 有权
公开(公告)号：US10514504B2
公开(公告)日：2019-12-24
申请号：US15902455
申请日：2018-02-22
申请人： Massachusetts Institute of Technology
发明人： Jason Scott Orcutt , Karan Kartik Mehta , Rajeev Jagga Ram , Amir Hossein Atabaki
IPC分类号： G02B6/12 , G02B6/136 , G02B6/132 , G02B6/122 , G02F1/01 , G02F1/025 , G02B6/30 , G02F1/015
摘要： Conventional approaches to integrating waveguides within standard electronic processes typically involve using a dielectric layer, such as polysilicon, single-crystalline silicon, or silicon nitride, within the in-foundry process or depositing and patterning a dielectric layer in the backend as a post-foundry process. In the present approach, the back-end of the silicon handle is etched away after in-foundry processing to expose voids or trenches defined using standard in-foundry processing (e.g., complementary metal-oxide-semiconductor (CMOS) processing). Depositing dielectric material into a void or trench yields an optical waveguide integrated within the front-end of the wafer. For example, a shallow trench isolation (STI) layer formed in-foundry may serve as a high-resolution patterning waveguide template in a damascene process within the front end of a die or wafer. Filling the trench with a high-index dielectric material yields a waveguide that can guide visible and/or infrared light, depending on the waveguide's dimensions and refractive index contrast.

2. 发明申请

US20160013867A1 DEVICES AND TECHNIQUES FOR INTEGRATED OPTICAL DATA COMMUNICATION 审中-公开
标题翻译：集成光数据通信的设备和技术
公开(公告)号：US20160013867A1
公开(公告)日：2016-01-14
申请号：US14436613
申请日：2013-02-15
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY
发明人： Benjamin Roy Moss , Jason Scott Orcutt , Vladimir Marko Stojanovic
IPC分类号： H04B10/516 , H01L21/8234 , H01L31/18 , H01L31/105 , G02F1/025 , G02F1/01
CPC分类号： H04B10/516 , G02F1/0121 , G02F1/0123 , G02F1/025 , G02F2203/15 , H01L21/823437 , H01L31/105 , H01L31/18
摘要： Devices and techniques for integrated optical data communication. A method of encoding symbols in an optical signal may include encoding a first symbol by injecting charge carriers, at a first rate, into a semiconductor device, such as a PIN diode. The method may also include encoding a second symbol by injecting charge carriers, at a second rate, into the semiconductor device. The first rate may exceed the second rate. A modulator driver circuit may include a resistive circuit coupled between supply terminal and drive terminals. The modulator driver circuit may also include a control circuit coupled between a data terminal and the resistive circuit. The control circuit may modulate a resistance of the resistive circuit by selectively coupling one or more of a plurality of portions of the resistive circuit to the drive terminal based on data to be optically encoded. In some embodiments, a modulator driver circuit and an optical modulator may be integrated on the same die or stacked (3D integrated) die and connected with through-oxide or through-silicon vias.
摘要翻译：集成光数据通信的设备和技术。对光信号中的符号进行编码的方法可以包括通过以第一速率将电荷载流子注入诸如PIN二极管的半导体器件来对第一符号进行编码。该方法还可以包括通过将电荷载体以第二速率注入半导体器件来对第二符号进行编码。第一个利率可能超过第二个利率。调制器驱动器电路可以包括耦合在电源端子和驱动端子之间的电阻电路。调制器驱动器电路还可以包括耦合在数据端和电阻电路之间的控制电路。控制电路可以通过根据要被光学编码的数据选择性地将电阻电路的多个部分中的一个或多个部分耦合到驱动端来调制电阻电路的电阻。在一些实施例中，调制器驱动器电路和光学调制器可以集成在相同的管芯或堆叠（3D集成）管芯上，并与贯通氧化物或硅通孔连接。

3. 发明授权

US10135539B2 Devices and techniques for integrated optical data communication 有权
公开(公告)号：US10135539B2
公开(公告)日：2018-11-20
申请号：US14436613
申请日：2013-02-15
申请人： Massachusetts Institute of Technology
发明人： Benjamin Roy Moss , Jason Scott Orcutt , Vladimir Marko Stojanovic
IPC分类号： H04B10/516 , G02F1/025 , G02F1/01 , H01L21/8234 , H01L31/105 , H01L31/18
摘要： Devices and techniques for integrated optical data communication. A method of encoding symbols in an optical signal may include encoding a first symbol by injecting charge carriers, at a first rate, into a semiconductor device, such as a PIN diode. The method may also include encoding a second symbol by injecting charge carriers, at a second rate, into the semiconductor device. The first rate may exceed the second rate. A modulator driver circuit may include a resistive circuit coupled between supply terminal and drive terminals. The modulator driver circuit may also include a control circuit coupled between a data terminal and the resistive circuit. The control circuit may modulate a resistance of the resistive circuit by selectively coupling one or more of a plurality of portions of the resistive circuit to the drive terminal based on data to be optically encoded. In some embodiments, a modulator driver circuit and an optical modulator may be integrated on the same die or stacked (3D integrated) die and connected with through-oxide or through-silicon vias.

4. 发明授权

US10043925B2 Guided-wave photodetector apparatus employing mid-bandgap states of semiconductor materials, and fabrication methods for same 有权
公开(公告)号：US10043925B2
公开(公告)日：2018-08-07
申请号：US15250594
申请日：2016-08-29
申请人： Massachusetts Institute of Technology
发明人： Rajeev Jagga Ram , Jason Scott Orcutt , Huaiyu Meng , Amir H. Atabaki
IPC分类号： H01L31/0232 , H01L27/144 , H01L31/0352 , H01L31/0368 , H01L31/103
摘要： Guided-wave photodetectors based on absorption of infrared photons by mid-bandgap states in non-crystal semiconductors. In one example, a resonant guided-wave photodetector is fabricated based on a polysilicon layer used for the transistor gate in a SOI CMOS process without any change to the foundry process flow (‘zero-change’ CMOS). Mid-bandgap defect states in the polysilicon absorb infrared photons. Through a combination of doping mask layers, a lateral p-n junction is formed in the polysilicon, and a bias voltage applied across the junction creates a sufficiently strong electric field to enable efficient photo-generated carrier extraction and high-speed operation. An example device has a responsivity of more than 0.14 A/W from 1300 to 1600 nm, a 10 GHz bandwidth, and 80 nA dark current at 15 V reverse bias.

5. 发明申请

US20180180811A1 WAVEGUIDE FORMATION USING CMOS FABRICATION TECHNIQUES 审中-公开
公开(公告)号：US20180180811A1
公开(公告)日：2018-06-28
申请号：US15902455
申请日：2018-02-22
申请人： Massachusetts Institute of Technology
发明人： Jason Scott Orcutt , Karan Kartik Mehta , Rajeev Jagga Ram , Amir Hossein Atabaki
IPC分类号： G02B6/136 , G02B6/132 , G02F1/025 , G02B6/122 , G02B6/12
CPC分类号： G02B6/136 , G02B6/12004 , G02B6/122 , G02B6/1225 , G02B6/132 , G02B6/305 , G02B2006/12061 , G02B2006/12097 , G02B2006/121 , G02B2006/12107 , G02B2006/12123 , G02F1/0147 , G02F1/025 , G02F2001/0151
摘要： Conventional approaches to integrating waveguides within standard electronic processes typically involve using a dielectric layer, such as polysilicon, single-crystalline silicon, or silicon nitride, within the in-foundry process or depositing and patterning a dielectric layer in the backend as a post-foundry process. In the present approach, the back-end of the silicon handle is etched away after in-foundry processing to expose voids or trenches defined using standard in-foundry processing (e.g., complementary metal-oxide-semiconductor (CMOS) processing). Depositing dielectric material into a void or trench yields an optical waveguide integrated within the front-end of the wafer. For example, a shallow trench isolation (STI) layer formed in-foundry may serve as a high-resolution patterning waveguide template in a damascene process within the front end of a die or wafer. Filling the trench with a high-index dielectric material yields a waveguide that can guide visible and/or infrared light, depending on the waveguide's dimensions and refractive index contrast.

6. 发明申请

US20150311982A1 DEVICES AND TECHNIQUES FOR INTEGRATED OPTICAL DATA COMMUNICATION 有权
标题翻译：集成光数据通信的设备和技术
公开(公告)号：US20150311982A1
公开(公告)日：2015-10-29
申请号：US14648002
申请日：2013-03-15
申请人： MASSACHUSETTS INSTITUTE OF TECHNOLOGY
发明人： Michael Stephen Georgas , Jason Scott Orcutt , Vladimir Marko Stojanovic
IPC分类号： H04B10/60 , H04B10/25
CPC分类号： H04B10/60 , H04B10/2504 , H04B10/697
摘要： Devices and techniques for integrated optical data communication. An optical receiver may include a photodetector and a differential amplifier. The photodetector is coupled to an optical waveguide. The optical waveguide is configured to provide an optical signal encoding data. A first terminal of the differential amplifier is coupled to receive a photodetection signal from the photodetector. A second terminal of the differential amplifier is coupled to receive, from a noise measurement unit, a reference signal representing a noise component of the photodetection signal. The differential amplifier is configured to provide an amplifier signal encoding at least some of the data.
摘要翻译：集成光数据通信的设备和技术。光接收器可以包括光电检测器和差分放大器。光电检测器耦合到光波导。光波导被配置为提供光信号编码数据。差分放大器的第一端子被耦合以从光电检测器接收光检测信号。差分放大器的第二端子被耦合以从噪声测量单元接收表示光检测信号的噪声分量的参考信号。差分放大器被配置为提供编码至少一些数据的放大器信号。

7. 发明授权

US10996538B2 Optical modulator from standard fabrication processing 有权
公开(公告)号：US10996538B2
公开(公告)日：2021-05-04
申请号：US14897466
申请日：2014-06-12
申请人： Massachusetts Institute of Technology , University of Colorado
发明人： Milos A. Popovic , Jeffrey Michael Shainline , Jason Scott Orcutt , Vladimir Marko Stojanovic
IPC分类号： G02F1/225 , G02F1/025 , G02B6/293 , G02F1/35
摘要： An optical modulator is disclosed that includes an optical resonator structure. The optical resonator structure includes at least one non-linear portion, the at least one non-linear portion comprising at least one radial junction region. The at least one radial junction region is formed between at least first and second materials, respectively, having different electronic conductivity characteristics. A principal axis of the at least one radial junction region is oriented along a radius of curvature of the at least one non-linear portion. The optical modulator includes an optical waveguide that is coupled to the at least one non-linear portion of the optical resonator structure.

8. 发明授权

US10514509B2 Method and apparatus for optical waveguide-to-semiconductor coupling and optical vias for monolithically integrated electronic and photonic circuits 有权
公开(公告)号：US10514509B2
公开(公告)日：2019-12-24
申请号：US14152898
申请日：2014-01-10
申请人： The Regents of the University of Colorado , Massachusetts Institute of Technology
发明人： Milos Popovic , Vladimir Marko Stojanovic , Jason Scott Orcutt
IPC分类号： G02B6/34 , G02B6/124
摘要： An optical coupler has a waveguide coupled to a grating of multiple scattering units, each scattering unit having a first scattering element formed of a shape in a polysilicon gate layer and a second scattering element formed of a shape in a body silicon layer of a metal-oxide-semiconductor (MOS) integrated circuit (IC). The couplers may be used in a system having a coupler on each of a first and second IC, infrared light being formed into a beam passing between the couplers. Vias may be interposed in third ICs between the first and second ICs. The couplers may be configured with nonuniform width of scattering elements to produce Gaussian or focused beams.

9. 发明申请

US20190149240A1 DEVICES AND TECHNIQUES FOR INTEGRATED OPTICAL DATA COMMUNICATION 审中-公开
公开(公告)号：US20190149240A1
公开(公告)日：2019-05-16
申请号：US16150965
申请日：2018-10-03
申请人： Massachusetts Institute of Technology
发明人： Benjamin Roy Moss , Jason Scott Orcutt , Vladimir Marko Stojanovic
IPC分类号： H04B10/516 , H01L31/18 , H01L31/105 , H01L21/8234 , G02F1/01 , G02F1/025
CPC分类号： H04B10/516 , G02F1/0121 , G02F1/0123 , G02F1/025 , G02F2203/15 , H01L21/823437 , H01L31/105 , H01L31/18
摘要： Devices and techniques for integrated optical data communication. A method of encoding symbols in an optical signal may include encoding a first symbol by injecting charge carriers, at a first rate, into a semiconductor device, such as a PIN diode. The method may also include encoding a second symbol by injecting charge carriers, at a second rate, into the semiconductor device. The first rate may exceed the second rate. A modulator driver circuit may include a resistive circuit coupled between supply terminal and drive terminals. The modulator driver circuit may also include a control circuit coupled between a data terminal and the resistive circuit. The control circuit may modulate a resistance of the resistive circuit by selectively coupling one or more of a plurality of portions of the resistive circuit to the drive terminal based on data to be optically encoded. In some embodiments, a modulator driver circuit and an optical modulator may be integrated on the same die or stacked (3D integrated) die and connected with through-oxide or through-silicon vias.

10. 发明授权

US10768368B2 Waveguide formation using CMOS fabrication techniques 有权
公开(公告)号：US10768368B2
公开(公告)日：2020-09-08
申请号：US16680630
申请日：2019-11-12
申请人： Massachusetts Institute of Technology
发明人： Jason Scott Orcutt , Karan Kartik Mehta , Rajeev Jagga Ram , Amir Hossein Atabaki
IPC分类号： G02B6/13 , G02B6/136 , G02B6/12 , G02B6/132 , G02B6/122 , G02F1/01 , G02F1/025 , G02B6/30 , G02F1/015
摘要： Conventional approaches to integrating waveguides within standard electronic processes typically involve using a dielectric layer, such as polysilicon, single-crystalline silicon, or silicon nitride, within the in-foundry process or depositing and patterning a dielectric layer in the backend as a post-foundry process. In the present approach, the back-end of the silicon handle is etched away after in-foundry processing to expose voids or trenches defined using standard in-foundry processing (e.g., complementary metal-oxide-semiconductor (CMOS) processing). Depositing dielectric material into a void or trench yields an optical waveguide integrated within the front-end of the wafer. For example, a shallow trench isolation (STI) layer formed in-foundry may serve as a high-resolution patterning waveguide template in a damascene process within the front end of a die or wafer. Filling the trench with a high-index dielectric material yields a waveguide that can guide visible and/or infrared light, depending on the waveguide's dimensions and refractive index contrast.

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