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1. 发明申请

US20150200290A1 PLANAR MOSFETS AND METHODS OF FABRICATION, CHARGE RETENTION 有权
标题翻译：平面MOSFET和制造方法，充电保持
公开(公告)号：US20150200290A1
公开(公告)日：2015-07-16
申请号：US14597233
申请日：2015-01-15
申请人： Mau Lam Lai
发明人： Mau Lam Lai , Yeuk Yin Mong , Duc Quang Chau
IPC分类号： H01L29/78 , H01L29/06 , H01L29/10 , H01L29/66
CPC分类号： H01L29/7802 , H01L29/0696 , H01L29/1095 , H01L29/407 , H01L29/66712 , H01L29/66825 , H01L29/7841 , H01L29/7881
摘要： A planar MOSFET includes a plurality of MOSFET cells. Each MOSFET cell includes an epitaxial layer of a first conductivity type, a body region of a second conductivity type inside the epitaxial layer, the second conductivity type having a polarity opposite to the first conductivity type, a source region inside the body region, a source contact portion to provide electrical contact with the source region, and a gate portion. A drift region is defined in the epitaxial layer between body regions of adjacent MOSFET cells and the gate portions of the adjacent MOSFET cells across said drift region are separated from each other with electrical insulation. A charge induction terminal is provided on the drift region to induce and store electric charge at said drift region upon application of a charge induction voltage at said charge induction terminal.
摘要翻译：平面MOSFET包括多个MOSFET单元。每个MOSFET单元包括第一导电类型的外延层，外延层内部的第二导电类型的体区，具有与第一导电类型相反极性的第二导电类型，体区内的源极区，源极接触部分以提供与源极区域的电接触，以及栅极部分。在相邻MOSFET单元的主体区域之间的外延层中限定漂移区域，并且跨越所述漂移区域的相邻MOSFET单元的栅极部分通过电绝缘彼此分离。在所述漂移区域上设置电荷感应端子，以在所述电荷感应端子处施加电荷感应电压时，在所述漂移区域处诱导并存储电荷。

2. 发明授权

US09466707B2 Planar mosfets and methods of fabrication, charge retention 有权
标题翻译：平面的mosfets和制造方法，电荷保留
公开(公告)号：US09466707B2
公开(公告)日：2016-10-11
申请号：US14597233
申请日：2015-01-15
申请人： Mau Lam Lai
发明人： Mau Lam Lai , Yeuk Yin Mong , Duc Quang Chau
IPC分类号： H01L29/78 , H01L29/66 , H01L29/06 , H01L29/10 , H01L29/788
CPC分类号： H01L29/7802 , H01L29/0696 , H01L29/1095 , H01L29/407 , H01L29/66712 , H01L29/66825 , H01L29/7841 , H01L29/7881
摘要： A planar MOSFET includes a plurality of MOSFET cells. Each MOSFET cell includes an epitaxial layer of a first conductivity type, a body region of a second conductivity type inside the epitaxial layer, the second conductivity type having a polarity opposite to the first conductivity type, a source region inside the body region, a source contact portion to provide electrical contact with the source region, and a gate portion. A drift region is defined in the epitaxial layer between body regions of adjacent MOSFET cells and the gate portions of the adjacent MOSFET cells across said drift region are separated from each other with electrical insulation. A charge induction terminal is provided on the drift region to induce and store electric charge at said drift region upon application of a charge induction voltage at said charge induction terminal.
摘要翻译：平面MOSFET包括多个MOSFET单元。每个MOSFET单元包括第一导电类型的外延层，外延层内部的第二导电类型的体区，具有与第一导电类型相反的极性的第二导电类型，体区内的源极区，源极接触部分以提供与源极区域的电接触，以及栅极部分。在相邻MOSFET单元的主体区域之间的外延层中限定漂移区域，并且跨越所述漂移区域的相邻MOSFET单元的栅极部分通过电绝缘彼此分离。在所述漂移区域上设置电荷感应端子，以在所述电荷感应端子处施加电荷感应电压时，在所述漂移区域处诱导并存储电荷。

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