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1. 发明授权

US08717834B2 Programming circuit using antifuse 有权
标题翻译：编程电路采用反熔丝
公开(公告)号：US08717834B2
公开(公告)日：2014-05-06
申请号：US13336909
申请日：2011-12-23
申请人： Mi Hyun Hwang
发明人： Mi Hyun Hwang
IPC分类号： G11C7/22
CPC分类号： G11C7/20 , G11C17/165 , G11C17/18 , G11C29/785
摘要： A programming circuit using an antifuse includes a fuse signal generation unit including an antifuse which connects a node with a low voltage in response to a test address when the node is driven to a level of a high voltage, and configured to output a signal of the node as a fuse signal in response to a test mode signal; and a programming signal generation unit configured to buffer the fuse signal in response to a power-up signal and generate a programming signal.
摘要翻译：使用反熔丝的编程电路包括熔丝信号生成单元，该熔丝信号生成单元包括当节点被驱动到高电平的水平时响应于测试地址将节点与低电压连接的反熔丝，并且被配置为输出节点作为响应于测试模式信号的熔丝信号; 以及编程信号生成单元，被配置为响应于上电信号缓冲熔丝信号并产生编程信号。

2. 发明申请

US20070274146A1 TRAS adjusting circuit for self-refresh mode in a semiconductor device 有权
标题翻译：用于半导体器件中的自刷新模式的TRAS调整电路
公开(公告)号：US20070274146A1
公开(公告)日：2007-11-29
申请号：US11648270
申请日：2006-12-29
申请人： Mi Hyun Hwang , Shin Ho Chu
发明人： Mi Hyun Hwang , Shin Ho Chu
IPC分类号： G11C11/406
CPC分类号： G11C11/406 , G11C11/40615 , G11C2211/4067
摘要： A tRAS adjusting circuit extends an active operation in a self-refresh operation. The tRAS adjusting circuit includes: a self-refresh sensing unit for receiving a self-refresh signal and a refresh signal and generating a sensing signal; a first extension unit for extending an enable interval of an active operation pulse; a second extension unit for extending an enable interval of an output signal of the first extension unit; a transfer unit for transferring either the output signal of the first extension unit or an output signal of the second extension unit as a tRAS signal according to an enable state of the sensing signal; and an active signal output unit for receiving the active operation pulse and tRAS signal and outputting an enable state of the active operation pulse as an active signal until the tRAS signal is disabled.
摘要翻译： tRAS调整电路在自刷新操作中扩展了活动操作。 tRAS调整电路包括：自刷新感测单元，用于接收自刷新信号和刷新信号并产生感测信号; 第一扩展单元，用于延长有效操作脉冲的使能间隔; 第二扩展单元，用于扩展第一扩展单元的输出信号的使能间隔; 传送单元，用于根据感测信号的使能状态将第一扩展单元的输出信号或第二扩展单元的输出信号作为tRAS信号传送; 以及有源信号输出单元，用于接收有源操作脉冲和tRAS信号，并且将有效操作脉冲的使能状态作为有效信号输出，直到tRAS信号被禁止为止。

3. 发明授权

US08358161B2 Buffer enable signal generating circuit and input circuit using the same 失效
标题翻译：缓冲器使能信号发生电路和输入电路使用相同
公开(公告)号：US08358161B2
公开(公告)日：2013-01-22
申请号：US13209239
申请日：2011-08-12
申请人： Mi Hyun Hwang
发明人： Mi Hyun Hwang
IPC分类号： H03K3/017
CPC分类号： G11C8/06
摘要： An input circuit comprises a buffer enable signal generating circuit for generating a buffer enable signal having an predetermined enable period in response to an external command, and a buffer circuit for buffering and outputting the external command and an external address signal in response to the buffer enable signal.
摘要翻译：输入电路包括缓冲器使能信号发生电路，用于响应于外部命令产生具有预定使能周期的缓冲器使能信号，以及用于响应于缓冲器使能缓冲并输出外部命令和外部地址信号的缓冲电路信号。

4. 发明申请

US20090109775A1 Precharge voltage supply circuit and semiconductor memory device using the same 失效
标题翻译：预充电电源电路和使用其的半导体存储器件
公开(公告)号：US20090109775A1
公开(公告)日：2009-04-30
申请号：US12012933
申请日：2008-02-05
申请人： Mi Hyun Hwang
发明人： Mi Hyun Hwang
IPC分类号： G11C7/12
CPC分类号： G11C7/12 , G11C2207/2227
摘要： A precharge voltage supply circuit and a semiconductor memory device using the same are described. The precharge voltage supply circuit includes a first voltage supplier configured to reduce a precharge voltage and supply the reduced precharge voltage in response to a power down mode signal that is activated in a power down mode, a second voltage supplier configured to supply a power voltage in a predetermined section from a point of time when exiting the power down mode, and a third voltage supplier configured to supply the precharge voltage after a lapse of the predetermined section.
摘要翻译：描述了预充电电压供应电路和使用该预充电电压电路的半导体存储器件。预充电电压供给电路包括：第一电压供给器，被配置为响应于在断电模式下被激活的掉电模式信号来减小预充电电压并提供降低的预充电电压;第二电压供给器，被配置为提供电源电压从退出模式的时间点起的预定部分;以及第三电压供给器，被配置为在预定部分经过之后提供预充电电压。

5. 发明申请

US20090003409A1 Temperature sensor and semiconductor memory device using the same 审中-公开
标题翻译：温度传感器和半导体存储器件使用相同
公开(公告)号：US20090003409A1
公开(公告)日：2009-01-01
申请号：US12005708
申请日：2007-12-28
申请人： Mi Hyun Hwang
发明人： Mi Hyun Hwang
IPC分类号： G01K7/00
CPC分类号： G11C7/04 , G11C11/406 , G11C11/40626
摘要： A semiconductor memory device includes a temperature sensor. The temperature sensor includes a temperature data signal generator and a temperature signal extractor. The temperature data signal generator generates temperature data signals for respective temperate ranges of internal temperature. The temperature signal extractor receives the temperature data signals and a pulse signal with a predetermined cycle, extracts the temperature data signal that is activated for at least two cycles of the pulse signal, and generates a temperature signal corresponding to the extracted temperature data signal.
摘要翻译：半导体存储器件包括温度传感器。温度传感器包括温度数据信号发生器和温度信号提取器。温度数据信号发生器产生各温度范围的内部温度的温度数据信号。温度信号提取器以预定的周期接收温度数据信号和脉冲信号，提取在脉冲信号的至少两个周期内激活的温度数据信号，并产生与提取的温度数据信号对应的温度信号。

6. 发明授权

US07863965B2 Temperature sensor circuit and method for controlling the same 有权
标题翻译：温度传感器电路及其控制方法
公开(公告)号：US07863965B2
公开(公告)日：2011-01-04
申请号：US12454256
申请日：2009-05-13
申请人： Mi Hyun Hwang
发明人： Mi Hyun Hwang
IPC分类号： H01L35/00
CPC分类号： G01K7/01
摘要： A temperature sensor circuit comprises a first reference voltage generator configured to generate a first signal that linearly varies with temperature and a first reference voltage signal that maintains a certain level irrespective of temperature, a second reference voltage generator configured to generate a second reference voltage signal by using the first reference voltage signal, and a controller configured to compare the first signal with the second reference voltage signal and control a voltage level of the first signal according to a comparison result.
摘要翻译：温度传感器电路包括：第一参考电压发生器，被配置为产生随温度线性变化的第一信号和与温度无关地保持一定电平的第一参考电压信号;第二参考电压发生器，被配置为通过以下步骤产生第二参考电压信号使用第一参考电压信号，以及控制器，被配置为将第一信号与第二参考电压信号进行比较，并根据比较结果控制第一信号的电压电平。

7. 发明授权

US07606095B2 Semiconductor memory device having a precharge voltage supply circuit capable of reducing leakage current between a bit line and a word line in a power-down mode 失效
标题翻译：具有能够以断电模式减少位线与字线之间的漏电流的预充电电压供给电路的半导体存储器件
公开(公告)号：US07606095B2
公开(公告)日：2009-10-20
申请号：US12012933
申请日：2008-02-05
申请人： Mi Hyun Hwang
发明人： Mi Hyun Hwang
IPC分类号： G11C7/12 , G11C7/20
CPC分类号： G11C7/12 , G11C2207/2227
摘要： A precharge voltage supply circuit and a semiconductor memory device using the same are described. The precharge voltage supply circuit includes a first voltage supplier configured to reduce a precharge voltage and supply the reduced precharge voltage in response to a power down mode signal that is activated in a power down mode, a second voltage supplier configured to supply a power voltage in a predetermined section from a point of time when exiting the power down mode, and a third voltage supplier configured to supply the precharge voltage after a lapse of the predetermined section.
摘要翻译：描述了预充电电压供应电路和使用该预充电电压电路的半导体存储器件。预充电电压供给电路包括：第一电压供给器，被配置为响应于在断电模式下被激活的掉电模式信号来减小预充电电压并提供降低的预充电电压;第二电压供给器，被配置为提供电源电压从退出模式的时间点起的预定部分;以及第三电压供给器，被配置为在预定部分经过之后提供预充电电压。

8. 发明授权

US08488404B2 Counter control signal generator and refresh circuit 失效
标题翻译：计数器控制信号发生器和刷新电路
公开(公告)号：US08488404B2
公开(公告)日：2013-07-16
申请号：US12649459
申请日：2009-12-30
申请人： Mi Hyun Hwang
发明人： Mi Hyun Hwang
IPC分类号： G11C7/00
CPC分类号： G11C11/406 , G11C8/04 , G11C11/40611 , G11C2211/4067
摘要： A counter control signal generator comprises a first pulse signal generator configured to generate a first pulse signal including a pulse generated when a self-refresh period is terminated, a second pulse signal generator configured to generate a second pulse signal including a pulse generated in sync with a cyclic signal generated during a refresh period, and a signal generator configured to generate a counter control signal counting an address of a memory cell, corresponding to a memory cell on which a refresh operation is conducted, in response to the first and second pulse signals.
摘要翻译：计数器控制信号发生器包括：第一脉冲信号发生器，被配置为产生包括当自刷新周期终止时产生的脉冲的第一脉冲信号;第二脉冲信号发生器，被配置为产生第二脉冲信号，该第二脉冲信号包括与在刷新周期期间产生的循环信号，以及信号发生器，其被配置为响应于所述第一和第二脉冲信号而产生对应于进行刷新操作的存储单元对存储单元的地址进行计数的计数器控制信号。

9. 发明授权

US08022735B2 Buffer enable signal generating circuit and input circuit using the same 失效
标题翻译：缓冲器使能信号发生电路和输入电路使用相同
公开(公告)号：US08022735B2
公开(公告)日：2011-09-20
申请号：US12455783
申请日：2009-06-04
申请人： Mi Hyun Hwang
发明人： Mi Hyun Hwang
IPC分类号： H03K3/00
CPC分类号： G11C8/06
摘要： An input circuit comprises a buffer enable signal generating circuit for generating a buffer enable signal having an predetermined enable period in response to an external command, and a buffer circuit for buffering and outputting the external command and an external address signal in response to the buffer enable signal.
摘要翻译：输入电路包括缓冲器使能信号发生电路，用于响应于外部命令产生具有预定使能周期的缓冲器使能信号，以及用于响应于缓冲器使能缓冲并输出外部命令和外部地址信号的缓冲电路信号。

10. 发明申请

US20100141321A1 Buffer enable signal generating circuit and input circuit using the same 失效
标题翻译：缓冲器使能信号发生电路和输入电路使用相同
公开(公告)号：US20100141321A1
公开(公告)日：2010-06-10
申请号：US12455783
申请日：2009-06-04
申请人： Mi Hyun Hwang
发明人： Mi Hyun Hwang
IPC分类号： H03K3/00
CPC分类号： G11C8/06
摘要： An input circuit comprises a buffer enable signal generating circuit for generating a buffer enable signal having an predetermined enable period in response to an external command, and a buffer circuit for buffering and outputting the external command and an external address signal in response to the buffer enable signal.
摘要翻译：输入电路包括缓冲器使能信号发生电路，用于响应于外部命令产生具有预定使能周期的缓冲器使能信号，以及用于响应于缓冲器使能缓冲并输出外部命令和外部地址信号的缓冲电路信号。

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