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1. 发明授权

US09666801B2 Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array 有权
公开(公告)号：US09666801B2
公开(公告)日：2017-05-30
申请号：US15156105
申请日：2016-05-16
申请人： Micron Technology, Inc.
发明人： Nishant Sinha , John Smythe , Bhaskar Srinivasan , Gurtej S. Sandhu , Joseph Neil Greeley , Kunal R. Parekh
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/1683 , H01L27/2472 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/147 , H01L45/16
摘要： A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. Metal oxide-comprising material is formed over the first conductive electrode. Etch stop material is deposited over the metal oxide-comprising material. Conductive material is deposited over the etch stop material. A second conductive electrode of the memory cell which comprises the conductive material received is formed over the etch stop material. Such includes etching through the conductive material to stop relative to the etch stop material and forming the non-volatile resistive oxide memory cell to comprise the first and second conductive electrodes having both the metal oxide-comprising material and the etch stop material therebetween. Other implementations are contemplated.

2. 发明申请

US20140104932A1 Memory Cells, Non-Volatile Memory Arrays, Methods Of Operating Memory Cells, Methods Of Writing To And Writing From A Memory Cell, And Methods Of Programming A Memory Cell 有权
标题翻译：存储单元，非易失性存储器阵列，操作存储单元的方法，从存储器单元写入和写入的方法，以及编程存储单元的方法
公开(公告)号：US20140104932A1
公开(公告)日：2014-04-17
申请号：US14132081
申请日：2013-12-18
申请人： Micron Technology, Inc.
发明人： Bhaskar Srinivasan , Gurtej S. Sandhu
IPC分类号： G11C13/00 , H01L45/00
CPC分类号： G11C13/0002 , G11C13/0007 , G11C13/0011 , G11C13/003 , G11C13/004 , G11C13/0069 , G11C2213/12 , G11C2213/32 , G11C2213/34 , G11C2213/52 , G11C2213/56 , G11C2213/77 , H01L27/101 , H01L45/08 , H01L45/085 , H01L45/1206
摘要： In one aspect, a method of operating a memory cell includes using different electrodes to change a programmed state of the memory cell than are used to read the programmed state of the memory cell. In one aspect, a memory cell includes first and second opposing electrodes having material received there-between. The material has first and second lateral regions of different composition relative one another. One of the first and second lateral regions is received along one of two laterally opposing edges of the material. Another of the first and second lateral regions is received along the other of said two laterally opposing edges of the material. At least one of the first and second lateral regions is capable of being repeatedly programmed to at least two different resistance states. Other aspects and implementations are disclosed.
摘要翻译：一方面，操作存储单元的方法包括使用不同的电极来改变存储器单元的编程状态，而不是用于读取存储器单元的编程状态。在一个方面，存储单元包括第一和第二相对电极，其间具有接收在其间的材料。该材料具有彼此不同组成的第一和第二横向区域。第一和第二横向区域中的一个沿着材料的两个横向相对的边缘中的一个被接收。第一和第二横向区域中的另一个沿着材料的所述两个横向相对的边缘中的另一个被容纳。第一和第二横向区域中的至少一个能够被重复编程至至少两个不同的阻力状态。公开了其他方面和实现。

3. 发明申请

US20140051208A1 Memory Cells and Methods of Forming Memory Cells 有权
标题翻译：记忆细胞和形成记忆细胞的方法
公开(公告)号：US20140051208A1
公开(公告)日：2014-02-20
申请号：US14053847
申请日：2013-10-15
申请人： Micron Technology, Inc.
发明人： Gurtej S. Sandhu , Bhaskar Srinivasan
IPC分类号： H01L45/00
CPC分类号： H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/1608
摘要： Some embodiments include memory cells which contain, in order; a first electrode material, a first metal oxide material, a second metal oxide material, and a second electrode material. The first metal oxide material has at least two regions which differ in oxygen concentration relative to one another. One of the regions is a first region and another is a second region. The first region is closer to the first electrode material than the second region, and has a greater oxygen concentration than the second region. The second metal oxide material includes a different metal than the first metal oxide material. Some embodiments include methods of forming memory cells in which oxygen is substantially irreversibly transferred from a region of a metal oxide material to an oxygen-sink material. The oxygen transfer creates a difference in oxygen concentration within one region of the metal oxide material relative to another.
摘要翻译：一些实施例包括按顺序包含的存储器单元; 第一电极材料，第一金属氧化物材料，第二金属氧化物材料和第二电极材料。第一金属氧化物材料具有至少两个相对于彼此的氧浓度不同的区域。其中一个地区是第一个地区，另一个是第二个地区。第一区域比第二区域更靠近第一电极材料，并且具有比第二区域更大的氧浓度。第二金属氧化物材料包括与第一金属氧化物材料不同的金属。一些实施例包括形成其中氧基本上不可逆地从金属氧化物材料的区域转移到氧沉降材料的存储单元的方法。氧传递在金属氧化物材料的一个区域内的氧浓度相对于另一个产生差异。

4. 发明授权

US08962387B2 Methods of forming memory cells 有权
标题翻译：形成记忆细胞的方法
公开(公告)号：US08962387B2
公开(公告)日：2015-02-24
申请号：US14053847
申请日：2013-10-15
申请人： Micron Technology, Inc.
发明人： Gurtej S. Sandhu , Bhaskar Srinivasan
IPC分类号： H01L21/00 , H01L45/00
CPC分类号： H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/1608
摘要： Some embodiments include methods of forming memory cells in which a metal oxide material is formed over a first electrode material, an oxygen-sink material is formed over and directly against the metal oxide material, and a second electrode material is formed over the oxygen-sink material. The second electrode material is of a different composition than the oxygen-sink material. The metal oxide material is treated to transfer oxygen from a region of the metal oxide material to the oxygen-sink material and thereby subdivide the metal oxide material into at least two regions, with one of the regions nearest the oxygen-sink material being relatively oxygen depleted relative to another of the regions.
摘要翻译：一些实施例包括形成其中在第一电极材料上形成金属氧化物材料的存储单元的方法，在金属氧化物材料之上并直接抵靠金属氧化物材料形成氧沉积材料，并且在氧气沉积物上方形成第二电极材料材料。第二电极材料具有与吸氧材料不同的组成。处理金属氧化物材料以将氧从金属氧化物材料的区域转移到吸氧材料，从而将金属氧化物材料细分成至少两个区域，其中最靠近氧气沉积材料的区域之一是相对氧气相对于另一个地区而言，

5. 发明授权

US08957403B2 Select devices including an open volume, and related methods, memory devices, and electronic systems 有权
标题翻译：选择包括开放卷的设备，相关方法，存储设备和电子系统
公开(公告)号：US08957403B2
公开(公告)日：2015-02-17
申请号：US13929348
申请日：2013-06-27
申请人： Micron Technology, Inc.
发明人： Bhaskar Srinivasan , Gurtej S. Sandhu
IPC分类号： H01L29/06 , H01L31/00 , H01L21/02 , H01L29/88 , H01L27/102 , H01L21/3205
CPC分类号： H01L29/88 , H01L21/3205 , H01L27/1021 , Y10S438/957
摘要： Select devices including an open volume that functions as a high bandgap material having a low dielectric constant are disclosed. The open volume may provide a more nonlinear, asymmetric I-V curve and enhanced rectifying behavior in the select devices. The select devices may comprise, for example, a metal-insulator-insulator-metal (MIIM) diode. Various methods may be used to form select devices and memory systems including such select devices. Memory devices and electronic systems include such select devices.
摘要翻译：公开了包括用作具有低介电常数的高带隙材料的开放体积的装置。开放体积可以在选择装置中提供更非线性的非对称I-V曲线和增强的整流行为。选择装置可以包括例如金属 - 绝缘体 - 绝缘体 - 金属（MIIM）二极管。可以使用各种方法来形成包括这种选择装置的选择装置和存储器系统。存储器件和电子系统包括这样的选择器件。

6. 发明申请

US20140332751A1 Memory Cells, Methods of Programming Memory Cells, and Methods of Forming Memory Cells 有权
标题翻译：记忆单元，记忆单元的编程方法和形成记忆单元的方法
公开(公告)号：US20140332751A1
公开(公告)日：2014-11-13
申请号：US14444795
申请日：2014-07-28
申请人： Micron Technology, Inc.
发明人： Roy E. Meade , Bhaskar Srinivasan , Gurtej S. Sandhu
IPC分类号： H01L45/00
CPC分类号： H01L45/085 , G11C13/0007 , G11C13/0011 , G11C13/0069 , G11C2213/56 , H01L45/04 , H01L45/1233 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146
摘要： Some embodiments include methods of programming a memory cell. A plurality of charge carriers may be moved within the memory cell, with an average charge across the moving charge carriers having an absolute value greater than 2. Some embodiments include methods of forming and programming an ionic-transport-based memory cell. A stack is formed to have programmable material between first and second electrodes. The programmable material has mobile ions which are moved within the programmable material to transform the programmable material from one memory state to another. An average charge across the moving mobile ions has an absolute value greater than 2. Some embodiments include memory cells with programmable material between first and second electrodes. The programmable material includes an aluminum nitride first layer, and includes a second layer containing a mobile ion species in common with the first layer.
摘要翻译：一些实施例包括编程存储器单元的方法。多个电荷载体可以在存储器单元内移动，其中跨越移动电荷载流子的绝对值大于2的平均电荷。一些实施例包括形成和编程基于离子传输的存储单元的方法。堆叠形成为在第一和第二电极之间具有可编程材料。可编程材料具有在可编程材料内移动的移动离子，以将可编程材料从一个存储器状态转换到另一个。移动移动离子上的平均电荷具有大于2的绝对值。一些实施例包括在第一和第二电极之间具有可编程材料的存储单元。可编程材料包括氮化铝第一层，并且包括含有与第一层共同的可移动离子物质的第二层。

7. 发明申请

US20130084695A1 Methods of Forming Diodes 有权
标题翻译：形成二极管的方法
公开(公告)号：US20130084695A1
公开(公告)日：2013-04-04
申请号：US13685402
申请日：2012-11-26
申请人： Micron Technology, Inc.
发明人： Gurtej Sandhu , Bhaskar Srinivasan
IPC分类号： H01L21/04
CPC分类号： H01L21/04 , H01L27/1021 , H01L27/2418 , H01L29/1606 , H01L45/00
摘要： Some embodiments include methods of forming diodes. A stack may be formed over a first conductive material. The stack may include, in ascending order, a sacrificial material, at least one dielectric material, and a second conductive material. Spacers may be formed along opposing sidewalls of the stack, and then an entirety of the sacrificial material may be removed to leave a gap between the first conductive material and the at least one dielectric material. In some embodiments of forming diodes, a layer may be formed over a first conductive material, with the layer containing supports interspersed in sacrificial material. At least one dielectric material may be formed over the layer, and a second conductive material may be formed over the at least one dielectric material. An entirety of the sacrificial material may then be removed.
摘要翻译：一些实施例包括形成二极管的方法。堆叠可以形成在第一导电材料上。堆叠可以按升序包括牺牲材料，至少一种电介质材料和第二导电材料。间隔物可以沿着堆叠的相对侧壁形成，然后可以去除整个牺牲材料以在第一导电材料和至少一个电介质材料之间留下间隙。在形成二极管的一些实施例中，可以在第一导电材料上形成层，其中包含支撑体的层散布在牺牲材料中。可以在该层上形成至少一种介电材料，并且可以在该至少一种电介质材料的上方形成第二导电材料。然后可以去除整个牺牲材料。

8. 发明申请

US20160260899A1 Methods of Forming a Non-Volatile Resistive Oxide Memory Cell and Methods of Forming a Non-Volatile Resistive Oxide Memory Array 有权
标题翻译：形成非易失性电阻氧化物记忆单元的方法和形成非易失性电阻氧化物存储器阵列的方法
公开(公告)号：US20160260899A1
公开(公告)日：2016-09-08
申请号：US15156105
申请日：2016-05-16
申请人： Micron Technology, Inc.
发明人： Nishant Sinha , John Smythe , Bhaskar Srinivasan , Gurtej S. Sandhu , Joseph Neil Greeley , Kunal R. Parekh
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/1683 , H01L27/2472 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/147 , H01L45/16
摘要： A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. Metal oxide-comprising material is formed over the first conductive electrode. Etch stop material is deposited over the metal oxide-comprising material. Conductive material is deposited over the etch stop material. A second conductive electrode of the memory cell which comprises the conductive material received is formed over the etch stop material. Such includes etching through the conductive material to stop relative to the etch stop material and forming the non-volatile resistive oxide memory cell to comprise the first and second conductive electrodes having both the metal oxide-comprising material and the etch stop material therebetween. Other implementations are contemplated.
摘要翻译：形成非易失性电阻氧化物存储单元的方法包括：形成存储单元的第一导电电极作为衬底的一部分。含金属氧化物的材料形成在第一导电电极上。蚀刻停止材料沉积在包含金属氧化物的材料上。导电材料沉积在蚀刻停止材料上。包含所接收的导电材料的存储单元的第二导电电极形成在蚀刻停止材料上。这样包括通过导电材料蚀刻以相对于蚀刻停止材料停止并且形成非易失性电阻氧化物存储单元，以包括具有包含金属氧化物的材料和其间的蚀刻停止材料的第一和第二导电电极。考虑其他实现。

9. 发明授权

US09406878B2 Resistive memory cells with two discrete layers of programmable material, methods of programming memory cells, and methods of forming memory cells 有权
标题翻译：具有可编程材料的两个离散层的电阻式存储单元，存储单元的编程方法以及形成存储单元的方法
公开(公告)号：US09406878B2
公开(公告)日：2016-08-02
申请号：US14444795
申请日：2014-07-28
申请人： Micron Technology, Inc.
发明人： Roy E. Meade , Bhaskar Srinivasan , Gurtej S. Sandhu
IPC分类号： G11C13/00 , H01L45/00
CPC分类号： H01L45/085 , G11C13/0007 , G11C13/0011 , G11C13/0069 , G11C2213/56 , H01L45/04 , H01L45/1233 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146
摘要： Some embodiments include methods of programming a memory cell. A plurality of charge carriers may be moved within the memory cell, with an average charge across the moving charge carriers having an absolute value greater than 2. Some embodiments include methods of forming and programming an ionic-transport-based memory cell. A stack is formed to have programmable material between first and second electrodes. The programmable material has mobile ions which are moved within the programmable material to transform the programmable material from one memory state to another. An average charge across the moving mobile ions has an absolute value greater than 2. Some embodiments include memory cells with programmable material between first and second electrodes. The programmable material includes an aluminum nitride first layer, and includes a second layer containing a mobile ion species in common with the first layer.
摘要翻译：一些实施例包括编程存储器单元的方法。多个电荷载体可以在存储器单元内移动，其中跨越移动电荷载流子的绝对值大于2的平均电荷。一些实施例包括形成和编程基于离子传输的存储单元的方法。堆叠形成为在第一和第二电极之间具有可编程材料。可编程材料具有在可编程材料内移动的移动离子，以将可编程材料从一个存储器状态转换到另一个。移动移动离子上的平均电荷具有大于2的绝对值。一些实施例包括在第一和第二电极之间具有可编程材料的存储单元。可编程材料包括氮化铝第一层，并且包括含有与第一层共同的可移动离子物质的第二层。

10. 发明授权

US09142766B2 Memory cells containing metal oxides 有权
标题翻译：含有金属氧化物的记忆体
公开(公告)号：US09142766B2
公开(公告)日：2015-09-22
申请号：US14599924
申请日：2015-01-19
申请人： Micron Technology, Inc.
发明人： Gurtej S. Sandhu , Bhaskar Srinivasan
IPC分类号： H01L47/00 , H01L45/00
CPC分类号： H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/1608
摘要： Some embodiments include memory cells which have first and second metal oxides between first and second electrodes. The first and second electrodes include metal. The first metal oxide has at least two regions which differ in oxygen concentration relative to one another. One of the regions is a first region and another is a second region. The first region is closer to the first electrode than the second region and has a greater oxygen concentration than the second region. The first metal oxide includes one or both of hafnium oxide and zirconium oxide. The second metal oxide is directly against the first metal oxide and includes a different metal than the first metal oxide. There is a substantially linear continuous oxygen-concentration gradient extending across an entirety of the first metal oxide.
摘要翻译：一些实施例包括在第一和第二电极之间具有第一和第二金属氧化物的存储器单元。第一和第二电极包括金属。第一金属氧化物具有相对于彼此的氧浓度不同的至少两个区域。其中一个地区是第一个地区，另一个是第二个地区。第一区域比第二区域更靠近第一电极，并且具有比第二区域更大的氧浓度。第一金属氧化物包括氧化铪和氧化锆中的一种或两种。第二金属氧化物直接抵靠第一金属氧化物并且包括与第一金属氧化物不同的金属。存在延伸穿过整个第一金属氧化物的基本上线性的连续氧浓度梯度。

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