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1. 发明授权

US11037606B2 Methods of command based and current limit controlled memory device power up 有权
公开(公告)号：US11037606B2
公开(公告)日：2021-06-15
申请号：US16887444
申请日：2020-05-29
申请人： Micron Technology, Inc.
发明人： Ted Pekny , Jeff Yu
IPC分类号： G11C5/14 , G11C7/20 , G06F1/3234
摘要： Methods for powering up a memory device, for example, are disclosed. One such memory device includes power up circuitry configured to receive an external power supply and to provide an internal power supply to the memory device upon receipt of a command. The power up circuitry may be configured to provide the internal power supply limited to a peak current, or may be configured to provide the internal power supply not limited to a peak current. The memory device may be, for example, a synchronous dynamic random access memory (SDRAM) device or Flash memory.

2. 发明申请

US20200294555A1 METHODS OF COMMAND BASED AND CURRENT LIMIT CONTROLLED MEMORY DEVICE POWER UP 审中-公开
公开(公告)号：US20200294555A1
公开(公告)日：2020-09-17
申请号：US16887444
申请日：2020-05-29
申请人： Micron Technology, Inc.
发明人： Ted Pekny , Jeff Yu
IPC分类号： G11C5/14 , G11C7/20 , G06F1/3234
摘要： Methods for powering up a memory device, for example, are disclosed. One such memory device includes power up circuitry configured to receive an external power supply and to provide an internal power supply to the memory device upon receipt of a command. The power up circuitry may be configured to provide the internal power supply limited to a peak current, or may be configured to provide the internal power supply not limited to a peak current. The memory device may be, for example, a synchronous dynamic random access memory (SDRAM) device or Flash memory.

3. 发明申请

US20160180892A1 SYSTEM AND METHOD OF COMMAND BASED AND CURRENT LIMIT CONTROLLED MEMORY DEVICE POWER UP 有权
公开(公告)号：US20160180892A1
公开(公告)日：2016-06-23
申请号：US15058009
申请日：2016-03-01
申请人： Micron Technology, Inc.
发明人： Ted Pekny , Jeff Yu
IPC分类号： G11C5/14
CPC分类号： G11C5/147 , G06F1/3275 , G11C5/14 , G11C5/148 , G11C7/20
摘要： Devices and systems for powering up a memory device, for example, are disclosed. One such memory device includes power up circuitry configured to receive an external power supply and to provide an internal power supply to the memory device upon receipt of a command. The power up circuitry may be configured to provide the internal power supply limited to a peak current, or may be configured to provide the internal power supply not limited to a peak current. The memory device may be, for example, a synchronous dynamic random access memory (SDRAM) device or Flash memory.

4. 发明授权

US08850119B2 Operating memory with specified cache address 有权
标题翻译：具有指定缓存地址的操作内存
公开(公告)号：US08850119B2
公开(公告)日：2014-09-30
申请号：US13867897
申请日：2013-04-22
申请人： Micron Technology, Inc.
发明人： Theodore T. Pekny , Jeff Yu
IPC分类号： G06F12/02 , G06F12/08
CPC分类号： G06F12/0246 , G06F12/0804
摘要： Embodiments are provided for operating a memory device by issuing certain instructions to the memory device that specify a cache and/or memory array address where an operation is to occur. One such method may include loading data into a specified address of a cache of the memory device, in which the specified address of the cache of the memory device may be specified by a first program sequence received at an interface of the memory device from a host external to the memory device. The method may also include writing the data from the specified address of the cache of the memory device to a specified address of a memory array of the memory device, in which the specified address of the memory array of the memory device may be specified by a second program sequence received at the interface from the host.
摘要翻译：提供的实施例用于通过向指定要发生操作的高速缓存和/或存储器阵列地址的存储器件发出某些指令来操作存储器件。一种这样的方法可以包括将数据加载到存储器设备的高速缓存的指定地址中，其中存储器设备的高速缓存的指定地址可以由存储器设备的接口从主机接收的第一程序序列指定外部存储器件。该方法还可以包括将数据从存储器件的高速缓存的指定地址写入存储器件的存储器阵列的指定地址，其中存储器件的存储器阵列的指定地址可由在主机的接口处接收到第二个程序序列。

5. 发明申请

US20130238846A1 SERIAL INTERFACE NAND 有权
标题翻译：串行接口NAND
公开(公告)号：US20130238846A1
公开(公告)日：2013-09-12
申请号：US13867897
申请日：2013-04-22
申请人： MICRON TECHNOLOGY, INC.
发明人： Theodore T. Pekny , Jeff Yu
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F12/0804
摘要： Embodiments are provided for operating a memory device by issuing certain instructions to the memory device that specify a cache and/or memory array address where an operation is to occur. One such method may include loading data into a specified address of a cache of the memory device, in which the specified address of the cache of the memory device may be specified by a first program sequence received at an interface of the memory device from a host external to the memory device. The method may also include writing the data from the specified address of the cache of the memory device to a specified address of a memory array of the memory device, in which the specified address of the memory array of the memory device may be specified by a second program sequence received at the interface from the host.
摘要翻译：提供的实施例用于通过向指定要发生操作的高速缓存和/或存储器阵列地址的存储器件发出某些指令来操作存储器件。一种这样的方法可以包括将数据加载到存储器设备的高速缓存的指定地址中，其中存储器设备的高速缓存的指定地址可以由存储器设备的接口从主机接收的第一程序序列指定外部存储器件。该方法还可以包括将数据从存储器件的高速缓存的指定地址写入存储器件的存储器阵列的指定地址，其中存储器件的存储器阵列的指定地址可由在主机的接口处接收到第二个程序序列。

6. 发明授权

US10147465B2 System and method of command based and current limit controlled memory device power up 有权
公开(公告)号：US10147465B2
公开(公告)日：2018-12-04
申请号：US15490536
申请日：2017-04-18
申请人： Micron Technology, Inc.
发明人： Ted Pekny , Jeff Yu
IPC分类号： G11C5/14 , G11C7/20 , G06F1/32
摘要： Devices and systems for powering up a memory device, for example, are disclosed. One such memory device includes power up circuitry configured to receive an external power supply and to provide an internal power supply to the memory device upon receipt of a command. The power up circuitry may be configured to provide the internal power supply limited to a peak current, or may be configured to provide the internal power supply not limited to a peak current. The memory device may be, for example, a synchronous dynamic random access memory (SDRAM) device or Flash memory.

7. 发明申请

US20170221532A1 SYSTEM AND METHOD OF COMMAND BASED AND CURRENT LIMIT CONTROLLED MEMORY DEVICE POWER UP 审中-公开
公开(公告)号：US20170221532A1
公开(公告)日：2017-08-03
申请号：US15490536
申请日：2017-04-18
申请人： Micron Technology, Inc.
发明人： Ted Pekny , Jeff Yu
IPC分类号： G11C5/14 , G06F1/32
CPC分类号： G11C5/147 , G06F1/3275 , G11C5/14 , G11C5/148 , G11C7/20
摘要： Devices and systems for powering up a memory device, for example, are disclosed. One such memory device includes power up circuitry configured to receive an external power supply and to provide an internal power supply to the memory device upon receipt of a command. The power up circuitry may be configured to provide the internal power supply limited to a peak current, or may be configured to provide the internal power supply not limited to a peak current. The memory device may be, for example, a synchronous dynamic random access memory (SDRAM) device or Flash memory.

8. 发明授权

US10692544B2 Methods of command based and current limit controlled memory device power up 有权
公开(公告)号：US10692544B2
公开(公告)日：2020-06-23
申请号：US16137133
申请日：2018-09-20
申请人： Micron Technology, Inc.
发明人： Ted Pekny , Jeff Yu
IPC分类号： G11C5/14 , G11C7/20 , G06F1/3234
摘要： Methods for powering up a memory device, for example, are disclosed. One such memory device includes power up circuitry configured to receive an external power supply and to provide an internal power supply to the memory device upon receipt of a command. The power up circuitry may be configured to provide the internal power supply limited to a peak current, or may be configured to provide the internal power supply not limited to a peak current. The memory device may be, for example, a synchronous dynamic random access memory (SDRAM) device or Flash memory.

9. 发明申请

US20190027196A1 METHODS OF COMMAND BASED AND CURRENT LIMIT CONTROLLED MEMORY DEVICE POWER UP 审中-公开
公开(公告)号：US20190027196A1
公开(公告)日：2019-01-24
申请号：US16137133
申请日：2018-09-20
申请人： Micron Technology, Inc.
发明人： Ted Pekny , Jeff Yu
IPC分类号： G11C5/14 , G11C7/20 , G06F1/32
CPC分类号： G11C5/147 , G06F1/3275 , G11C5/14 , G11C5/148 , G11C7/20
摘要： Methods for powering up a memory device, for example, are disclosed. One such memory device includes power up circuitry configured to receive an external power supply and to provide an internal power supply to the memory device upon receipt of a command. The power up circuitry may be configured to provide the internal power supply limited to a peak current, or may be configured to provide the internal power supply not limited to a peak current. The memory device may be, for example, a synchronous dynamic random access memory (SDRAM) device or Flash memory.

10. 发明授权

US09640227B2 System and method of command based and current limit controlled memory device power up 有权
公开(公告)号：US09640227B2
公开(公告)日：2017-05-02
申请号：US15058009
申请日：2016-03-01
申请人： Micron Technology, Inc.
发明人： Ted Pekny , Jeff Yu
IPC分类号： G11C5/14 , G11C7/20
CPC分类号： G11C5/147 , G06F1/3275 , G11C5/14 , G11C5/148 , G11C7/20
摘要： Devices and systems for powering up a memory device, for example, are disclosed. One such memory device includes power up circuitry configured to receive an external power supply and to provide an internal power supply to the memory device upon receipt of a command. The power up circuitry may be configured to provide the internal power supply limited to a peak current, or may be configured to provide the internal power supply not limited to a peak current. The memory device may be, for example, a synchronous dynamic random access memory (SDRAM) device or Flash memory.

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